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Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175 Operating Temperature
Lower Leakage Current : 10 A (Max.) @ VDS = 100V
Lower RDS(ON) : 0.092 (Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
R JC
R CS
R JA
/W
Characteristic Max. UnitsSymbol Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (TC=25 )
Continuous Drain Current (TC=100 )
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25 )
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
Characteristic Value UnitsSymbol
IDM
VGS
EAS
IAR
EAR
dv/dt
ID
PD
TJ , TSTG
TL
A
V
mJ
A
mJ
V/ns
W
W/
A
VDSS V
TO-220
1.Gate 2. Drain 3. Source
3
2
1
µ
Ω
O
1
O
2
O
3
ΟC
ΟC
O
1
O
1
θ
ΟC
ΟC
ΟC
ΟC
ΟC
θ
θ
IRF530A
BVDSS = 100 V
RDS(on) = 0.11
ID = 14 A
100
14
9.9
56
261
14
5.5
6.5
55
0.36
- 55 to +175
300
2.74
--
62.5
--
0.5
--
Ω
20
+
_
©1 999 Fairchi ld Sem icond uctor Corporati on
Rev. B
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25 unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
BVDSS
BV/ TJ
VGS(th)
RDS(on)
IGSS
IDSS
V
V/
V
nA
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
VGS=0V,ID=250 A
ID=250 A See Fig 7
VDS=5V,ID=250 A
VGS=20V
VGS=-20V
VDS=100V
VDS=80V,TC=150
VGS=10V,ID=7A
VDS=40V,ID=7A
VDD=50V,ID=14A,
RG=12
See Fig 13
VDS=80V,VGS=10V,
ID=14A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
VGS=0V,VDS=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
ISM
VSD
trr
Qrr
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
--
--
--
--
--
A
V
ns
¥ìC
Integral reverse pn-diode
in the MOSFET
TJ=25 ,IS=14A,VGS=0V
TJ=25 ,IF=14A
diF/dt=100A/ s
∆ ∆
ΟC
Ω
Ω
µ
O
4
O
5
ΟCµµ
ΟC
O
4
O
4
O
4
O
4
O
1
Ω
ΟC
µ
ΟC
O
5
O
4
µ
IRF530A
100
--
2.0
--
--
--
--
--
0.11
--
--
--
--
--
150
62
13
14
55
36
27
4.5
12.8
--
--
4.0
100
-100
10
100
0.11
--
790
175
72
40
40
110
80
36
--
--
10.25
610
--
--
--
109
0.41
14
56
1.5
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=2mH, IAS=14A, VDD=25V, RG=27 , Starting TJ =25
ISD 14A, di/dt 350A/ s, VDD BVDSS , Starting TJ =25
Pulse Test : Pulse Width = 250 s, Duty Cycle 2%
Essentially Independent of Operating Temperature
<
_<
_
<
_<
_
O
1
O
2
O
3
O
4
O
5
ΩoC
oC
µµ
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage
Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current
IRF530A
10-1 100101
100
101
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
VGS
Top : 1 5 V
1 0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
ID , Drain Current [A]
VDS , Drain-Source Voltage [V]
2 4 6 8 10
10-1
100
101
25 oC
175 oC
- 55 oC
@ Notes :
1. VGS = 0 V
2. VDS = 40 V
3. 250 µs Pulse Test
ID , Drain Current [A]
VGS , Gate-Source Voltage [V]
015 30 45 60
0.00
0.05
0.10
0.15
0.20
@ Note : TJ = 25 oC
V
GS = 20 V
V
GS = 10 V
RDS(on)
, [
Ω]
Drain-Source On-Resistance
ID
, Drain Current [A] 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
10-1
100
101
175 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
IDR
, Reverse Drain Current [A]
V
SD , Source-Drain Voltage [V]
100101
0
250
500
750
1000 C
iss= Cgs+ Cgd ( C
ds= shorted )
C
oss= Cds+ Cgd
C
rss= Cgd
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
C rss
C oss
C iss
Capacitance [pF]
V
DS , Drain-Source Voltage [V] 0 5 10 15 20 25 30
0
5
10
V
DS = 80 V
V
DS = 50 V
V
DS = 20 V
@ Notes : ID = 14.0 A
VGS
, Gate-Source Voltage [V]
QG
, Total Gate Charge [nC]
N-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature
Fig 11. Thermal Response
Fig 10. Max. Drain Current vs. Case TemperatureFig 9. Max. Safe Operating Area
PDM
t1t2
IRF530A
-75 -50 -25 025 50 75 100 125 150 175 200
0.8
0.9
1.0
1.1
1.2
@ Notes :
1. VGS = 0 V
2. ID = 250 µA
BVDSS
, (Normalized)
Drain-Source Breakdown Voltage
T
J , Junction Temperature [ oC]
-75 -50 -25 025 50 75 100 125 150 175 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
@ Notes :
1. VGS = 10 V
2. ID = 7.0 A
RDS(on)
, (Normalized)
Drain-Source On-Resistance
T
J , Junction Temperature [ oC]
100101102
10-1
100
101
102
10 µs
DC
100 µs
1 ms
10 ms
@ Notes :
1. TC = 25 oC
2. TJ = 175 oC
3. Single Pulse
Operation in This Area
is Limited by R DS(on)
ID , Drain Current [A]
V
DS , Drain-Source Voltage [V]
10-5 10-4 10-3 10-2 10-1 100101
10-1
100
single pulse
0.2
0.1
0.01
0.02
0.05
D=0.5
@ Notes :
1. ZθJC(t)=2.74 oC/W Max.
2. Duty Factor, D=t
1/t2
3. TJM-TC=PDM*ZθJC(t)
ZθJC
(t) , Thermal Response
t1 , Square Wave Pulse Duration [sec]
25 50 75 100 125 150 175
0
3
6
9
12
15
ID , Drain Current [A]
Tc
, Case Temperature [ o
C]
N-CHANNEL
POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
Fig 13. Resistive Switching Test Circuit & Waveforms
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
EAS = LL IAS2
----
2
1--------------------
BVDSS -- VDD
BVDSS
Vin
Vout
10%
90%
td(on) tr
t on t off
td(off) tf
Charge
VGS
10V
Qg
Qgs Qgd
Vary tp to obtain
required peak ID
10V
VDD
C
LL
VDS
ID
RG
t p
DUT
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
VDD
( 0.5 rated VDS )
10V
Vout
Vin
RL
DUT
RG
3mA
VGS
Current Sampling (IG)
Resistor Current Sampling (ID)
Resistor
DUT
VDS
300nF
50K
200nF12V
Same Type
as DUT
“ Current Regulator ”
R1R2
Ω
IRF530A
N-CHANNEL
POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
--
L
I S
Driver
VGS
RGSame Type
as DUT
VGS • dv/dt controlled by “RG”
• IS controlled by Duty Factor “D”
VDD
10V
VGS
( Driver )
I S
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Vf
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
IRF530A
TRADEMARKS
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
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