MUR305S - MUR360S
Taiwan Semiconductor
1 Version:H1903
3A, 50V - 600V Surface Mount Ultrafast Power Rectifier
FEATURES
● Glass passivated junction
● Ideal for automated placement
● Built-in strain relief
● Ultrafast recovery time for high efficiency
● Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● High frequency rectification
● Freewheeling application
● Switching mode converters and inverters in computer, automotive
and telecommunication.
MECHANICAL DATA
● Case: DO-214AB (SMC)
● Molding compound meets UL 94V-0 flammability rating
● Part no. with suffix "H" means AEC-Q101 qualified
● Packing code with suffix "G" means green compound
(halogen-free)
● Moisture sensitivity level: level 1, per J-STD-020
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.21 g (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
IF(AV)
3
A
VRRM
50 - 600
V
IFSM
75
A
TJ MAX
175
°C
Package
DO-214AB (SMC)
Configuration
Single die
DO-214AB (SMC)
PARAMETER
SYMBOL
MUR
305S
MUR
310S
MUR
315S
MUR
320S
MUR
340S
MUR
360S
UNIT
Marking code on the device
MUR
305S
MUR
310S
MUR
315S
MUR
320S
MUR
340S
MUR
360S
Repetitive peak reverse voltage
VRRM
50
100
150
200
400
600
V
Reverse voltage, total rms value
VR(RMS)
35
70
105
140
280
420
V
Maximum DC blocking voltage
VDC
50
100
150
200
400
600
V
Forward current
IF(AV)
3
A
Surge peak forward current, 8.3
ms single half sine-wave
superimposed on rated load per
diode
IFSM
75
A
Junction temperature
TJ
- 55 to +175
°C
Storage temperature
TSTG
- 55 to +175
°C
MUR305S - MUR360S
Taiwan Semiconductor
2 Version:H1903
PARAMETER
SYMBOL
TYP
UNIT
Junction-to-lead thermal resistance per diode
RӨJL
11
°C/W
PARAMETER
CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Forward voltage per diode (1)
MUR305S
MUR310S
MUR315S
MUR320S
IF = 3A, TJ = 25°C
VF
-
0.875
V
MUR340S
MUR360S
-
1.250
V
MUR305S
MUR310S
MUR315S
MUR320S
IF = 3A, TJ = 150°C
VF
-
0.710
V
MUR340S
MUR360S
-
1.050
V
Reverse current @ rated VR
per diode (2)
MUR305S
MUR310S
MUR315S
MUR320S
TJ = 25°C
IR
-
5
μA
MUR340S
MUR360S
-
10
μA
MUR305S
MUR310S
MUR315S
MUR320S
TJ = 150°C
IR
-
150
μA
MUR340S
MUR360S
-
250
μA
Reverse recovery time
MUR305S
MUR310S
MUR315S
MUR320S
IF=0.5A , IR=1.0A
IRR=0.25A
trr
-
25
ns
MUR340S
MUR360S
-
50
ns
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
MUR305S - MUR360S
Taiwan Semiconductor
3 Version:H1903
PART
NO.
PART
NO.
SUFFIX
PACKING
CODE
PACKING
CODE
SUFFIX
PACKAGE
PACKING
MUR3xxS
(Note 1,2)
H
R7
G
SMC
850 / 7" Plastic reel
R6
SMC
3,000 / 13" Paper reel
M6
SMC
3,000 / 13" Plastic reel
V7
Matrix SMC
850 / 7" Plastic reel
V6
Matrix SMC
3,000 / 13" Plastic reel
Note :
1. "xx" defines voltage from 50V (MUR305S) to 600V (MUR340S)
2. Only V6 and V7 are all green compound (halogen free)
EXAMPLE P/N
PART NO.
PART NO.
SUFFIX
PACKING
CODE
PACKING CODE
SUFFIX
DESCRIPTION
MUR305SHR7G
MUR305S
H
R7
G
AEC-Q101 qualified
Green compound
MUR305S - MUR360S
Taiwan Semiconductor
4 Version:H1903
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
Fig.2 Typical Junction Capacitance
Fig.3 Typical Reverse Characteristics
Fig.4 Typical Forward Characteristics
0
1
2
3
4
025 50 75 100 125 150 175
LEAD TEMPERATURE (oC)
10
100
1000
0.1 1 10 100
CAPACITANCE (pF)
REVERSE VOLTAGE (V)
MUR305S - MUR320S
MUR340S - MUR360S
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
TJ=25℃
TJ=150℃
MUR305S - MUR320S
0.1
1
10
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
MUR305S - MIR320S
TJ=150℃
TJ=25℃
INSTANTANEOUS REVERSE CURRENT (μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS FORWARD CURRENT (A)
(A)
0.001
0.01
0.1
1
10
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Pulse width
TJ=25°C
TJ=125°C
UF1DLW
FORWARD VOLTAGE (V)
AVERAGE FORWARD CURRENT (A)
MUR305S - MUR360S
Taiwan Semiconductor
5 Version:H1903
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.5 Typical Reverse Characteristics
Fig.6 Typical Forward Characteristics
Fig.7 Maximum Non-repetitive Forward Surge Current
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
TJ=25℃
TJ=150℃
MUR340S - MUR360S
0.1
1
10
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
MUR340S - MUR360S
TJ=150℃
TJ=25℃
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
(A)
0.001
0.01
0.1
1
10
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Pulse width
TJ=25°C
TJ=125°C
UF1DLW
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
0
10
20
30
40
50
60
70
80
110 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
8.3ms Single Half Sine Wave
MUR305S - MUR360S
Taiwan Semiconductor
6 Version:H1903
PACKAGE OUTLINE DIMENSIONS
DO-214AB (SMC)
DIM.
Unit (mm)
Unit (inch)
Min.
Max.
Min.
Max.
A
2.90
3.20
0.114
0.126
B
6.60
7.11
0.260
0.280
C
5.59
6.22
0.220
0.245
D
2.00
2.62
0.079
0.103
E
1.00
1.60
0.039
0.063
F
7.75
8.13
0.305
0.320
G
0.10
0.20
0.004
0.008
H
0.15
0.31
0.006
0.012
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
Matrix SMC SMC
Symbol
Unit (mm)
Unit (inch)
A
3.30
0.130
B
2.50
0.098
C
6.80
0.268
D
4.40
0.173
E
9.40
0.370
P/N
=Marking Code
G
=Green Compound
YW
=Date Code
F
=Factory Code
MUR305S - MUR360S
Taiwan Semiconductor
7 Version:H1903
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
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merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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