Si2304BDS Vishay Siliconix New Product N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.070 @ VGS = 10 V 3.2 0.105 @ VGS = 4.5 V 2.6 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2304BDS (L4)* *Marking Code Ordering Information: Si2304BDS-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150_C)a, b TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b IS TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range PD V 3.2 2.6 2.5 IDM 2.1 10 0.9 0.62 1.08 0.75 0.69 0.48 TJ, Tstg Unit -55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t 5 sec Steady State Steady State RthJA RthJF Typical Maximum 90 115 130 166 60 75 Unit _C/W C/W Notes a. Surface Mounted on FR4 Board, t 5 sec. b. Pulse width limited by maximum junction temperature. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72503 S-32137--Rev. A, 27-Oct-03 www.vishay.com 1 Si2304BDS Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, ID = 250 mA 1.5 IGSS VDS = 0 V, VGS = 20 V 100 VDS = 30 V, VGS = 0 V 0.5 VDS = 30 V, VGS = 0 V, TJ = 55_C 10 VDS = 30 V, VGS = 1.0 V, TJ =25_C 1 Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On-Resistance Drain-Source On Resistancea Forward VDS 4.5 V, VGS = 10 V rDS(on) DS( ) Transconductancea 3.0 6 nA mA A VGS = 10 V, ID = 2.5 A 0.055 0.070 VGS = 4.5 V, ID = 2.0 A 0.080 0.105 gfs VDS = 4.5 V, ID = 2.5 A 6.0 VSD IS = 1.25 A, VGS = 0 V 0.8 1.2 Gate Charge Qg VDS = 15 V, VGS = 5 V, ID = 2.5 A 2.6 4 Total Gate Charge Qgt 4.6 7 Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Diode Forward Voltage V W S V Dynamic VDS = 15 V,, VGS = 10 V,, ID = 2.5 A 0.8 nC 1.15 f = 1.0 MHz 3.0 W 225 50 VDS = 15 V, VGS = 0 V, f = 1 MHz pF 28 Switching Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time VDD = 15 V, RL = 15 W ID 1 A, VGEN = 10 V, RG = 6 W td(off) Fall-Time 7.5 12 12.5 20 19 30 15 25 tf ns Notes a. Pulse test: PW 300 ms duty cycle 2%. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 10 10 VGS = 10 thru 5 V 8 I D - Drain Current (A) I D - Drain Current (A) 8 6 4 4V 2 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 4 TC = 125_C 2 25_C -55_C 3V 0 6 0 10 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Document Number: 72503 S-32137--Rev. A, 27-Oct-03 Si2304BDS Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 350 300 0.20 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 0.24 0.16 0.12 VGS = 4.5 V 0.08 250 Ciss 200 150 100 VGS = 10 V Coss 0.04 50 0.00 Crss 0 0 2 4 6 8 10 0 5 10 ID - Drain Current (A) Gate Charge 25 30 On-Resistance vs. Junction Temperature 1.6 VDS = 15 V ID = 2.5 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 20 VDS - Drain-to-Source Voltage (V) 10 8 6 4 2 VGS = 10 V ID = 2.5 A 1.4 1.2 1.0 0.8 0 0 1 2 3 4 0.6 -50 5 -25 0 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C TJ = 25_C 0.1 0.01 0.001 0.0 50 0.20 r DS(on) - On-Resistance ( W ) 1 25 TJ - Junction Temperature (_C) 10 I S - Source Current (A) 15 0.16 ID = 2.5 A 0.12 0.08 0.04 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 72503 S-32137--Rev. A, 27-Oct-03 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si2304BDS Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 10 8 ID = 250 mA -0.0 -0.2 TA = 25_C Single Pulse 6 Power (W) V GS(th) Variance (V) 0.2 4 -0.4 2 -0.6 -0.8 -50 -25 0 25 50 75 100 125 0 0.01 150 1 0.1 TJ - Temperature (_C) 100 600 Safe Operating Area 100 rDS(on) Limited IDM Limited 10 I D - Drain Current (A) 10 Time (sec) 10 ms 100 ms 1 1 ms 10 ms 0.1 TA = 25_C Single Pulse 100 ms dc, 100 s, 10 s, 1 s 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 130_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 www.vishay.com 4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72503 S-32137--Rev. A, 27-Oct-03