Si2304BDS
Vishay Siliconix
New Product
Document Number: 72503
S-32137—Rev. A, 27-Oct-03
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)
30
0.070 @ VGS = 10 V 3.2
30 0.105 @ VGS = 4.5 V 2.6
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Si2304BDS (L4)*
*Marking Code
Ordering Information: Si2304BDS-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 sec Steady State Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS 20
V
Continuous Drain Current (TJ = 150
_
C)a, b
TA = 25_C
ID
3.2 2.6
Continuous Drain Current (TJ = 150_C)a,
b
TA = 70_CID2.5 2.1
A
Pulsed Drain Current IDM 10 A
Continuous Source Current (Diode Conduction)a, bIS0.9 0.62
Maximum Power Dissipationa, b
TA = 25_C
PD
1.08 0.75
W
Maximum Power Dissipationa,
b
TA = 70_CPD0.69 0.48 W
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Mi J ti tAbit
a
t 5 sec
R
90 115
Maximum Junction-to-Ambienta
Steady State RthJA 130 166 _C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 60 75
C/W
Notes
a. Surface Mounted on FR4 Board, t 5 sec.
b. Pulse width limited by maximum junction temperature.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Si2304BDS
Vishay Siliconix New Product
www.vishay.com
2
Document Number: 72503
S-32137—Rev. A, 27-Oct-03
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1.5 3.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = 20 V 100 nA
VDS = 30 V, VGS = 0 V 0.5
Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 55_C 10 mA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 1.0 V, TJ =25_C 1
mA
On-State Drain CurrentaID(on) VDS 4.5 V, VGS = 10 V 6 A
Drain Source On Resistancea
rDS( )
VGS = 10 V, ID = 2.5 A 0.055 0.070
W
Drain-Source On-ResistancearDS(on) VGS = 4.5 V, ID = 2.0 A 0.080 0.105 W
Forward Transconductanceagfs VDS = 4.5 V, ID = 2.5 A 6.0 S
Diode Forward Voltage VSD IS = 1.25 A, VGS = 0 V 0.8 1.2 V
Dynamic
Gate Charge QgVDS = 15 V, VGS = 5 V, ID = 2.5 A 2.6 4
Total Gate Charge Qgt 4.6 7
nC
Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 2.5 A 0.8
n
C
Gate-Drain Charge Qgd
DS ,GS ,D
1.15
Gate Resistance Rgf = 1.0 MHz 3.0 W
Input Capacitance Ciss 225
Output Capacitance Coss VDS = 15 V, VGS = 0 V, f = 1 MHz 50 pF
Reverse Transfer Capacitance Crss
VDS 15 V, VGS 0 V, f 1 MHz
28
pF
Switching
Turn-On Delay Time td(on) 7.5 12
Rise Time trVDD = 15 V, RL = 15 W12.5 20
ns
Turn-Off Delay Time td(off)
VDD = 15 V
,
RL = 15 W
ID 1 A, VGEN = 10 V, RG = 6 W19 30 ns
Fall-Time tf15 25
Notes
a. Pulse test: PW 300 ms duty cycle 2%.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
2
4
6
8
10
012345
0
2
4
6
8
10
0246810
VGS = 10 thru 5 V
TC = 125_C
−55_C
25_C
Output Characteristics Transfer Characteristics
VDS − Drain-to-Source Voltage (V)
− Drain Current (A)ID
VGS − Gate-to-Source Voltage (V)
− Drain Current (A)ID
4 V
3 V
Si2304BDS
Vishay Siliconix
New Product
Document Number: 72503
S-32137—Rev. A, 27-Oct-03
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
− On-Resistance (rDS(on) W)
0
50
100
150
200
250
300
350
0 5 10 15 20 25 30
0.6
0.8
1.0
1.2
1.4
1.6
−50 −25 0 25 50 75 100 125 150
0
2
4
6
8
10
012345
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0246810
VDS − Drain-to-Source Voltage (V)
Crss
Coss
Ciss
VDS = 15 V
ID = 2.5 A
ID − Drain Current (A)
VGS = 10 V
ID = 2.5 A
VGS = 4.5 V
VGS = 10 V
Gate Charge
On-Resistance vs. Drain Current
− Gate-to-Source Voltage (V)
Qg − Total Gate Charge (nC)
C − Capacitance (pF)
VGS
Capacitance
On-Resistance vs. Junction Temperature
TJ − Junction Temperature (_C)
(Normalized)
− On-Resistance (rDS(on) W)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.00
0.04
0.08
0.12
0.16
0.20
0246810
TJ = 150_C
TJ = 25_C
ID = 2.5 A
10
0.001
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
− On-Resistance (rDS(on) W)
VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)
− Source Current (A)IS
0.01
0.1
1
Si2304BDS
Vishay Siliconix New Product
www.vishay.com
4
Document Number: 72503
S-32137—Rev. A, 27-Oct-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
10
2
4
Power (W)
Single Pulse Power
Time (sec)
10−310−21 10 60010−1
10−4100
−0.8
−0.6
−0.4
−0.2
−0.0
0.2
0.4
−50 −25 0 25 50 75 100 125 150
ID = 250 mA
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Threshold Voltage
Variance (V)VGS(th)
TJ − Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 130_C/W
3. TJM − TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
1 60010
6
0.10.01 100
Safe Operating Area
VDS − Drain-to-Source Voltage (V)
100
1
0.1 110 100
0.01
10
TA = 25_C
Single Pulse
− Drain Current (A)ID
0.1
rDS(on) Limited
BVDSS Limited
IDM Limited
TA = 25_C
Single Pulse
1 ms
10 ms
100 ms
dc, 100 s, 10 s, 1 s
10 ms
100 ms
8
