Order this document by 2N6436/D SEMICONDUCTOR TECHNICAL DATA . . . designed for use in industrial-military power amplifier and switching circuit applications. * High Collector-Emitter Sustaining Voltage -- VCEO(sus) = 80 Vdc (Min) -- 2N6436 VCEO(sus) = 100 Vdc (Min) -- 2N6437 VCEO(sus) = 120 Vdc (Min) -- 2N6438 * High DC Current Gain -- hFE = 20-80 @IC = 10 Adc hFE = 12 (Min) @ IC = 25 Adc * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc * Fast Switching Times @ IC = 10 Adc tr = 0.3 s (Max) ts = 1.0 s (Max) tf = 0.25 s (Max) * Complement to NPN 2N6338 thru 2N6341 *Motorola Preferred Device 25 AMPERE POWER TRANSISTORS PNP SILICON 80, 100, 120 VOLTS 200 WATTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIII III III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIII III III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIIIIII IIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII CASE 1-07 TO-204AA (TO-3) MAXIMUM RATINGS (1) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Symbol 2N6436 2N6437 2N6438 Unit VCB VCEO 100 120 140 Vdc 80 100 120 Vdc VEB IC Collector Current -- Continuous Peak Base Current IB PD Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range TJ,Tstg 6.0 Vdc 25 50 Adc 10 Adc 200 1.14 Watts W/_C - 65 to + 200 _C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.875 _C/W (1) Indicates JEDEC Registered Data. PD, POWER DISSIPATION (WATTS) 200 175 150 125 100 75 50 25 0 0 25 50 75 100 125 150 175 200 TC, CASE TEMPERATURE (C) Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII v v *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 80 100 120 -- -- -- Vdc -- -- -- 50 50 50 -- -- -- -- -- -- 10 10 10 1.0 1.0 1.0 -- -- -- 10 10 10 -- 100 30 20 12 -- 120 -- -- -- 1.0 1.8 -- -- 1.8 2.5 OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 50 mAdc, IB = 0) 2N6436 2N6437 2N6438 Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) 2N6436 2N6437 2N6438 Collector Cutoff Current (VCE = 90 Vdc, VBE(off) = -1.5 Vdc) (VCE = 110 Vdc, VBE(off) = -1.5 Vdc) (VCE = 130 Vdc, VBE(off) = -1.5 Vdc) (VCE = 80 Vdc, VBE(off) = -1.5 Vdc, TC = 150_C) (VCE = 100 Vdc, VBE(off) = -1.5 Vdc, TC = 150_C) (VCE = 120 Vdc, VBE(off) = -1.5 Vdc, TC = 150_C) 2N6436 2N6437 2N6438 2N6436 2N6437 2N6438 Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 140 Vdc, IE = 0) 2N6436 2N6437 2N6438 Adc ICEO Adc ICEX Adc ICBO Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO mAdc Adc ON CHARACTERISTICS DC Current Gain (1) (IC = 0.5 Adc, VCE = 2.0 Vdc) (IC = 10 Adc, VCE = 2.0 Vdc) (IC = 25 Adc, VCE = 2.0 Vdc) hFE Collector-Emitter Saturation Voltage (1) (IC = 10 Adc, IB = 1.0 Adc) (IC = 25 Adc, IB = 2.5 Adc) VCE(sat) Base-Emitter Saturation Voltage (1) (IC = 10 Adc, IB = 1.0 Adc) (IC = 25 Adc, IB = 2.5 Adc) VBE(sat) -- Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCE = 10 Vdc, IE = 0, f = 100 kHz) fT Cob 40 -- MHz -- 700 pF tr ts tf -- 0.3 s -- 1.0 s -- 0.25 s SWITCHING CHARACTERISTICS Rise Time (VCC = 80 Vdc, IC = 10 A, VBE(off) = 6.0 Vdc, IB1 = 1.0 Adc) Storage (VCC = 80 Vdc, IC = 10 A, VBE(off) = 6.0 Vdc, IB1 = IB2 = 1.0 Adc) Fall Time (VCC = 80 Vdc, IC = 10 A,VBE(off) = 6.0 Vdc, IB1 = IB2 = 1.0 Adc) * Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. 0.3 VCC + 80 V 0.2 RC 8.0 OHMS RB = 10 OHMS 0 - 11 V 10 s v tr, tf 10 ns DUTY CYCLE = 1.0% SCOPE MBR745 - 5.0 V NOTE: For information on Figures 3 and 6, RB and RC were varied to obtain desired test conditions. Figure 2. Switching Time Test Circuit 2 1.0 t, TIME ( s) + 9.0 V td @ VBE(off) = 6.0 V VCC = 80 V IC/IB = 10 TJ = 25C 0.7 0.5 0.3 0.2 tr 0.1 0.07 0.05 0.03 0.3 5.0 7.0 10 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 20 Figure 3. Turn-On Time Motorola Bipolar Power Transistor Device Data 30 r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 P(pk) 0.05 0.02 0.05 t1 0.03 0.01 0.02 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.02 0.03 0.05 t2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 ZJC(t) = r(t)RJC RJC = 0.875C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) 50 100 200 300 500 1000 Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMP) 100 50 20 10 5.0 dc TJ = 200C 2.0 1.0 0.5 BONDING WIRE LIMITED THERMALLY LIMITED TC = 25C (SINGLE PULSE) PULSE DUTY CYCLE 10% SECOND BREAKDOWN LIMITED v 0.2 0.1 0.05 0.02 0.01 2.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 200_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 200 s 1.0 ms 5.0 ms CURVES APPLY BELOW RATED VCEO 3.0 5.0 7.0 10 20 30 v 2N6436 2N6437 2N6438 50 70 100 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active Region Safe Operating Area ts t, TIME ( s) 1.0 0.7 0.5 4000 3000 VCC = 80 V IB1 = IB2 IC/IB = 10 TJ = 25C tf 0.3 0.2 0.1 0.07 0.05 0.03 0.3 Cib 2000 CAPACITANCE (pF) 3.0 2.0 TJ = 25C Cob 1000 700 500 300 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) Figure 6. Turn-Off Time Motorola Bipolar Power Transistor Device Data 20 30 200 0.1 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 7. Capacitance 3 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 TJ = 150C hFE, DC CURRENT GAIN 100 + 25C 70 50 - 55C 30 20 10 VCE = 2.0 V VCE = 4.0 V 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 20 30 2.0 1.6 V, TEMPERATURE COEFFICIENTS (mV/C) TJ = 25C V, VOLTAGE (VOLTS) 1.6 1.4 1.2 VBE(sat) @ IC/IB = 10 0.8 0.6 VBE @ VCE = 2.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 1.0 0.6 0.4 0.2 0 0.02 0.03 + 2.5 + 2.0 *APPLIES FOR IC/IB 2.0 + 1.5 + 1.0 + 0.5 v hFE @ VCE2 + 2.0 V + 25C to +150C *VC FOR VCE(sat) 0 - 55C to + 25C - 0.5 - 1.0 - 1.5 + 25C to +150C VB FOR VBE - 2.0 - 55C to + 25C 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages Figure 11. Temperature Coefficients 20 30 101 VCE = 40 V TJ = +150C IB , BASE CURRENT ( A) IC, COLLECTOR CURRENT ( A) 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) 101 +100C 100 10-1 VCE = 40 V + 25C REVERSE FORWARD 100 +100C 10-1 10-2 10-3 + 25C REVERSE 4 20 A 0.8 TJ = +150C 10-3 + 0.2 10 A 1.4 - 2.5 0.3 20 30 102 10-2 5.0 A Figure 9. Collector Saturation Region 2.0 1.0 IC = 2.0 A 1.2 Figure 8. DC Current Gain 1.8 TJ = 25C 1.8 + 0.1 0 - 0.1 - 0.2 - 0.3 - 0.4 - 0.5 10-4 + 0.16 + 0.08 FORWARD 0 - 0.08 - 0.16 VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 12. Collector Cut-Off Region Figure 13. Base Cutoff Region - 0.24 Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. C -T- E D K 2 PL 0.13 (0.005) U T Q M M Y M -Y- L V SEATING PLANE 2 H G B M T Y 1 -Q- 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z Motorola Bipolar Power Transistor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *2N6436/D* 2N6436/D