NTR4501N Power MOSFET 20 V, 3.2 A, Single N-Channel, SOT-23 Features * * * * Leading Planar Technology for Low Gate Charge / Fast Switching 2.5 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint Pb-Free Packages are Available http://onsemi.com V(BR)DSS 20 V Applications * Load/Power Switch for Portables * Load/Power Switch for Computing * DC-DC Conversion RDS(on) Typ ID Max (Note 1) 70 mW @ 4.5 V 3.6 A 85 mW @ 2.5 V 3.1 A N-Channel D MAXIMUM RATINGS (TJ= 25C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGS 12 V ID 3.2 A 2.4 A 1.25 W Continuous Drain Current (Note 1) Steady State Steady State Power Dissipation (Note 1) Pulsed Drain Current TA = 25C TA = 85C Steady State PD G S 3 MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 1 IDM 10.0 A TJ, Tstg -55 to 150 C Continuous Source Current (Body Diode) IS 1.6 A Lead Temperature for Soldering Purposes (1/8" from case for 10 s) TL 260 C Symbol Max Unit (Note: Microdot may be in either location) Junction-to-Ambient (Note 1) RqJA 100 C/W *Date Code orientation may vary depending upon manufacturing location. Junction-to-Ambient (Note 2) RqJA 300 tp = 10 ms Operating Junction and Storage Temperature THERMAL RESISTANCE RATINGS Parameter Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size. TR1 M G G 2 SOT-23 CASE 318 STYLE 21 TR1 M G 2 Source 1 Gate = Device Code = Date Code* = Pb-Free Package ORDERING INFORMATION Device NTR4501NT1 NTR4501NT1G NTR4501NT3 NTR4501NT3G Package Shipping SOT-23 3000/Tape & Reel SOT-23 (Pb-Free) 3000/Tape & Reel SOT-23 10,000/Tape & Reel SOT-23 (Pb-Free) 10,000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2006 March, 2006 - Rev. 5 1 Publication Order Number: NTR4501N/D NTR4501N Electrical Characteristics (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units V(BR)DSS VGS = 0 V, ID = 250 mA 20 24.5 V 22 mV/C OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current V(BR)DSS/TJ IDSS VGS = 0 V TJ = 25C 1.5 mA VDS = 16 V TJ = 85C 10 mA 100 nA IGSS VDS = 0 V, VGS = 12 V VGS(TH) VGS = VDS, ID = 250 mA ON CHARACTERISTICS Gate Threshold Voltage (Note 3) Negative Threshold Temperature Coefficient Drain-to-Source On Resistance Forward Transconductance VGS(TH)/TJ RDS(on) gFS 0.65 1.2 -2.3 V mV/C VGS = 4.5 V, ID = 3.6 A 70 80 VGS = 2.5 V, ID = 3.1 A 85 105 VDS = 5.0 V, ID = 3.6 A 9 mW S CHARGES AND CAPACITANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge 200 VGS = 0 V, f = 1.0 MHz, VDS = 10 V QG(TOT) Gate-to-Source Gate Charge QGS Gate-to-Drain Charge QGD 80 50 2.4 VGS = 4.5 V, VDS = 10 V, ID = 3.6 A pF 6.0 0.5 nC 0.6 SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) 6.5 VGS = 4.5 V, VDS = 10 V, ID = 3.6 A, RG = 6.0 W tf 12 ns 12 3 SOURCE-DRAIN DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, ISD = 1.6 A 0.8 1.2 V 7.1 VGS = 0 V, dIS/dt = 100 A/ms, IS = 1.6 A QRR 5 1.9 3.0 3. Pulse Test: Pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns nC NTR4501N 7.0 VGS = 2.0 V T = 25C J VGS = 10 V VGS = 2.2 V 6.0 5.0 VGS = 3.0 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 7.0 VGS = 1.8 V 4.0 . 3.0 VGS = 1.6 V 2.0 VGS = 1.4 V 1.0 0 VGS = 1.2 V 0 1 2 3 4 5 6 7 8 9 6.0 5.0 4.0 3.0 2.0 TJ = 100C 0 1.0 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.20 ID = 3.2 A TJ = 25C 0.10 2.0 4.0 3.0 5.0 6.0 2.5 3.0 3.5 0.10 TJ = 25C VGS = 2.5 V 0.09 0.08 VGS = 4.5 V 0.07 0.06 0.05 0.125 0.25 0.375 0.5 0.625 0.75 0.875 1.0 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Gate-to-Source Voltage Figure 4. On-Resistance versus Drain Current and Gate Voltage 1.4 1000 VGS = 0 V 1.2 1.0 IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2.0 Figure 2. Transfer Characteristics 0.25 0.05 1.0 1.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics 0.15 TJ = 25C TJ = 55C 1.0 0 10 VDS 10 V ID = 3.2 A VGS = 4.5 V 0.8 0.6 -50 -25 0 25 50 75 100 125 10 TJ = 100C 1.0 150 TJ = 150C 100 2 TJ, JUNCTION TEMPERATURE (C) 6 10 14 18 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 20 VGS = 0 V TJ = 25C C, CAPACITANCE (pF) 300 Ciss 200 100 Coss 3 5 8 10 13 QGD QGS 6 1.0 Crss 0 VGS 9 2.0 50 15 20 18 0 TJ = 25C ID = 3.2 A 0 0.5 1.0 1.5 2.0 2.5 DRAIN-TO-SOURCE VOLTAGE (VOLTS) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 100 3 0 3.0 td(off) 10 IS, SOURCE CURRENT (AMPS) 4 VDS = 10 V ID = 3.2 A VGS = 4.5 V t, TIME (ns) 12 VDS 3.0 150 tr td(on) tf 1 0 15 QT 4.0 250 VGS = 0 V TJ = 25C 3 2 1 0 1 10 100 0.3 0.6 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) RG, GATE RESISTANCE (W) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current http://onsemi.com 4 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 5.0 350 0 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) NTR4501N 1.2 NTR4501N PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. D SEE VIEW C 3 HE E 1 c 2 e b DIM A A1 b c D E e L L1 HE 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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