Order this document by MJ11012/D SEMICONDUCTOR TECHNICAL DATA %""$ !$"& "##$ "# . . . for use as output devices in complementary general purpose amplifier applications. IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIII III IIIIIIIIIIIIIIIIIII IIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIII v IIIIIIIIIIIII IIIIIIIIIIIIII * High DC Current Gain -- hFE = 1000 (Min) @ IC - 20 Adc * Monolithic Construction with Built-in Base Emitter Shunt Resistor * Junction Temperature to + 200_C MAXIMUM RATINGS Symbol MJ11012 MJ11013 MJ11014 MJ11015 MJ11016 Unit VCEO 60 90 120 Vdc Collector-Base Voltage VCB 60 90 120 Vdc Emitter-Base Voltage VEB 5 Vdc Collector Current IC 30 Adc Base Current IB 1 Adc Total Device Dissipation @TC = 25_C Derate above 25_C @ TC = 100_C PD 200 1.15 Watts W/_C TJ, Tstg - 55 to + 200 _C Rating Collector-Emitter Voltage Operating Storage Junction Temperature Range *Motorola Preferred Device 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60 - 120 VOLTS 200 WATTS THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes for 10 Seconds. Symbol Max Unit RJC 0.87 _C/W TL 275 _C COLLECTOR PNP MJ11013 MJ11015 BASE CASE 1-07 TO-204AA (TO-3) COLLECTOR NPN MJ11012 MJ11014 MJ11016 BASE 8.0 k 40 8.0 k EMITTER 40 EMITTER Figure 1. Darlington Circuit Schematic Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII v IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted.) Characteristics Symbol Min Max 60 90 120 -- -- -- -- -- -- -- -- -- 1 1 1 5 5 5 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC = 100 mAdc, IB = 0) V(BR)CEO MJ11012 MJ11013, MJ11014 MJ11015, MJ11016 Collector-Emitter Leakage Current (VCE = 60 Vdc, RBE = 1k ohm) (VCE = 90 Vdc, RBE = 1k ohm) (VCE = 120 Vdc, RBE = 1k ohm) (VCE = 60 Vdc, RBE = 1k ohm, TC = 150_C) (VCE = 90 Vdc, RBE = 1k ohm, TC = 150_C) (VCE = 120 Vdc, RBE = 1k ohm, TC = 150_C) Vdc ICER MJ11012 MJ11013, MJ11014 MJ11015, MJ11016 MJ11012 MJ11013, MJ11014 MJ11015, MJ11016 mAdc Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO -- 5 mAdc Collector-Emitter Leakage Current (VCE = 50 Vdc, IB = 0) ICEO -- 1 mAdc 1000 200 -- -- -- -- 3 4 -- -- 3.5 5 4 -- ON CHARACTERISTICS(1) DC Current Gain (IC = 20 Adc,VCE = 5 Vdc) (IC = 30 Adc, VCE = 5 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc) (IC = 30 Adc, IB = 300 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = 20 A, IB = 200 mAdc) (IC = 30 A, IB = 300 mAdc) VBE(sat) -- Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product (IC = 10 A, VCE = 3 Vdc, f = 1 MHz) (1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2 hfe MHz 2.0%. Motorola Bipolar Power Transistor Device Data hFE, DC CURRENT GAIN 30 k 20 k PNP MJ11013, MJ11015 NPN MJ11012, MJ11014, MJ11016 10 k 7k 5k 3k 2k 700 500 VCE = 5 Vdc TJ = 25C 300 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP) 20 30 hFE , SMALL-SIGNAL CURRENT GAIN (NORMALIZED) 2 1 0.5 0.2 0.1 0.05 PNP MJ11013, MJ11015 NPN MJ11012, MJ11014, MJ11016 0.02 0.01 VCE = 3 Vdc IC = 10 mAdc TJ = 25C 0.005 10 20 Figure 2. DC Current Gain (1) IC, COLLECTOR CURRENT (AMP) 4 V, VOLTAGE (VOLTS) 500 700 1.0 k 50 PNP MJ11013, MJ11015 NPN MJ11012, MJ11014, MJ11016 TJ = 25C IC/IB = 100 2 VBE(sat) VCE(sat) 1 0 0.1 50 70 100 200 300 f, FREQUENCY (kHz) Figure 3. Small-Signal Current Gain 5 3 30 0.2 0.5 1 2 5 10 20 50 100 IC, COLLECTOR CURRENT (AMP) Figure 4. "On" Voltages (1) There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operations e.g., the transistor must not be subjected to greater Motorola Bipolar Power Transistor Device Data 20 10 5 2 1 0.5 0.2 0.1 0.05 BONDING WIRE LIMITATION THERMAL LIMITATION @ TC = 25C SECOND BREAKDOWN LIMITATION MJ11012 MJ11013, MJ11014 MJ11015, MJ11016 0.02 0.01 2 3 5 7 10 20 30 50 200 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active Region DC Safe Operating Area dissipation than the curves indicate. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. 3 PACKAGE DIMENSIONS A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. C -T- E D K 2 PL 0.13 (0.005) U T Q M M Y M -Y- L V SEATING PLANE 2 H G B M T Y 1 -Q- 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 4 Motorola Bipolar Power Transistor Device Data *MJ11012/D* MJ11012/D