MJ11014 - ON Semiconductor

Motorola Bipolar Power Transistor Device Data

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. . . for use as output devices in complementary general purpose amplifier applica-

tions.

•High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc

•Monolithic Construction with Built–in Base Emitter Shunt Resistor

•Junction Temperature to +200

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎ

Symbol

ÎÎÎÎ

MJ11012

ÎÎÎÎ

MJ11013

MJ11014

ÎÎÎÎ

MJ11015

MJ11016

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎ

VCEO

ÎÎÎÎ

120

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎ

VCB

ÎÎÎÎ

120

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎ

VEB

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @TC = 25

Derate above 25

C @ TC = 100

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

200

1.15

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Operating Storage Junction

Temperature Range

ÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎÎÎ

–55 to +200

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

0.87

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Lead Temperature for

Soldering Purposes for

10 Seconds.

ÎÎÎÎÎ

ÎÎÎÎÎÎ

275

ÎÎÎ

Figure 1. Darlington Circuit Schematic

BASE

EMITTER

COLLECTOR

≈

8.0 k

≈

PNP

MJ11013

MJ11015

BASE

EMITTER

COLLECTOR

≈

8.0 k

≈

NPN

MJ11012

MJ11014

MJ11016

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJ11012/D

 Motorola, Inc. 1995











30 AMPERE

DARLINGTON

POWER TRANSISTORS

COMPLEMENTARY

SILICON

60–120 VOLTS

200 WATTS

*Motorola Preferred Device







CASE 1–07

TO–204AA

(TO–3)

REV 1

    

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted.)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristics

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Breakdown Voltage(1)

(IC = 100 mAdc, IB = 0) MJ11012

MJ11013, MJ11014

MJ11015, MJ11016

ÎÎÎÎ

V(BR)CEO

ÎÎÎÎ

120

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Leakage Current

(VCE = 60 Vdc, RBE = 1k ohm) MJ11012

(VCE = 90 Vdc, RBE = 1k ohm) MJ11013, MJ11014

(VCE = 120 Vdc, RBE = 1k ohm) MJ11015, MJ11016

(VCE = 60 Vdc, RBE = 1k ohm, TC = 150

C) MJ11012

(VCE = 90 Vdc, RBE = 1k ohm, TC = 150

C) MJ11013, MJ11014

(VCE = 120 Vdc, RBE = 1k ohm, TC = 150

C) MJ11015, MJ11016

ÎÎÎÎ

ICER

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Leakage Current

(VCE = 50 Vdc, IB = 0)

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS(1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 20 Adc,VCE = 5 Vdc)

(IC = 30 Adc, VCE = 5 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

1000

200

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 20 Adc, IB = 200 mAdc)

(IC = 30 Adc, IB = 300 mAdc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 20 A, IB = 200 mAdc)

(IC = 30 A, IB = 300 mAdc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

3.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain Bandwidth Product

(IC = 10 A, VCE = 3 Vdc, f = 1 MHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

—

ÎÎÎ

MHz

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle

2.0%.

    

Motorola Bipolar Power Transistor Device Data

30 k

0.3

Figure 2. DC Current Gain (1)

IC, COLLECTOR CURRENT (AMP)

0.5 0.7 1 2 3 10 20 30

7 k

3 k

2 k

700

Figure 3. Small–Signal Current Gain

hFE, SMALL–SIGNAL CURRENT GAIN (NORMALIZED)

10 f, FREQUENCY (kHz)

20 30 50 70 200 300 500 1.0 k

0.2

0.05

0.02

0.01

10 k

5 k

hFE, DC CURRENT GAIN

VCE = 5 Vdc

TJ = 25

500

300 5 7 100

0.1

Figure 4. “On” Voltages (1)

IC, COLLECTOR CURRENT (AMP)

100

VBE(sat)

Figure 5. Active Region DC Safe Operating Area

20 k PNP MJ11013, MJ11015

NPN MJ11012, MJ11014, MJ11016

V, VOLTAGE (VOLTS)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

3 5 10 20 200

0.01

IC, COLLECTOR CURRENT (AMP)

0.2

0.1

0.5

0.05

0.02

TJ = 25

IC/IB = 100

VCE = 3 Vdc

IC = 10 mAdc

TJ = 25

0.1

0.5

0.005

700

MJ11012

MJ11013, MJ11014

MJ11015, MJ11016

2 7 30 70 1002 20 500.2 0.5 1 105

VCE(sat)

PNP MJ11013, MJ11015

NPN MJ11012, MJ11014, MJ11016

PNP MJ11013, MJ11015

NPN MJ11012, MJ11014, MJ11016

BONDING WIRE LIMITATION

THERMAL LIMITATION @ TC = 25

SECOND BREAKDOWN LIMITATION

There are two limitations on the power handling ability of a

transistor average junction temperature and secondary

breakdown. Safe operating area curves indicate IC – VCE lim-

its of the transistor that must be observed for reliable opera-

tions e.g., the transistor must not be subjected to greater

dissipation than the curves indicate.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the limita-

tions imposed by secondary breakdown.

    

4 Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B––– 1.050 ––– 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N––– 0.830 ––– 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

–T–

SEATING

PLANE

2 PLD

0.13 (0.005) Y M

0.13 (0.005) T

–Q–

–Y–

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

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MJ11012/D

*MJ11012/D*

◊