© 2000 IXYS All rights reserved 1 - 2
VBE 17-12NO7
ECO-PAC TM
Single Phase Rectifier Bridge
with Fast Recovery Epitaxial Diodes (FRED)
IdAV = 19 A
VRRM = 1200 V
trr = 40 ns
VRSM VRRM Typ
V V
1200 1200 VBE 17-12NO7
Symbol Conditions Maximum Ratings
IdAV ①TC = 85°C, module 19 A
IdAVM 90 A
IFSM TVJ = 45°C t = 10 ms (50 Hz), sine 40 A
VR = 0 t = 8.3 ms (60 Hz), sine 45 A
TVJ = TVJM t = 10 ms (50 Hz), sine 35 A
VR = 0 t = 8.3 ms (60 Hz), sine 40 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 10 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 10 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 5 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 5 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 3000 V~
IISOL £ 1 mA t = 1 s 3600 V~
MdMounting torque (M4) 1.5-2/14-18 Nm/lb.in.
Weight typ. 19 g
Features
• Package with DCB ceramic
base plate in low profile
• Isolation voltage 3000 V~
• Planar passivated chips
• Low forward voltage drop
• Leads suitable for PC board soldering
Applications
• Supplies for DC power equipment
• Input and output rectifiers for high
frequency
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Space and weight savings
• Improved temperature and power
cycling capability
• Small and light weight
• Low noise switching
Data according to IEC 60747 refer to a single diode unless otherwise stated
①for resistive load at bridge output.
D
K
A
N
Symbol Conditions Characteristic Values
typ. max.
IRVR = VRRM TVJ = 25°C 0.06 mA
VR = VRRM TVJ = TVJM 0.25 mA
VFIF = 10 A TVJ = 25°C 2.92 V
VT0 for power-loss calculations only 1.32 V
rT30 mW
RthJC per diode; DC current 2.5 K/W
RthCH per diode, DC current, typ. 0.3 K/W
IRM IF = 12 A, -diF/dt = 100 A/µs 4 8.5 A
VR = 100 V, L = 0.05 mH, TVJ = 100°C
trr IF = 1 A; -di/dt = 50 A/µs; VR = 30 V, TVJ = 25°C 40 tbd ns
aMax. allowable acceleration 50 m/s2
dScreeping distance on surface 11.2 mm
dAcreepage distance in air 9.7 mm
IXYS reserves the right to change limits, test conditions and dimensions.
032
Dimensions in mm (1 mm = 0.0394")
© 2000 IXYS All rights reserved 2 - 2
VBE 17-12NO7
200 600 10000 400 800
90
100
110
120
130
140
150
0.0001 0.001 0.01 0.1 1 10
0.001
0.01
0.1
1
10
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
Kf
TVJ
°C-diF/dt
ts
K/W
0 200 400 600 800 1000
0
40
80
120
0.0
0.4
0.8
1.2
VFR
diF/dt
V
200 600 10000 400 800
0
10
20
30
40
100 1000
0
500
1000
1500
2000
01234
0
5
10
15
20
25
30
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/
m
s
A
V
nC
A/
m
sA/
m
s
trr
ns
tfr
ZthJC
A/
m
s
µs
VBE17-12NO7 / VUE22-12NO7
IF= 20A
IF= 10A
IF= 5A
TVJ= 100°C
VR = 600V TVJ= 100°C
IF = 10A
Fig. 3 Peak reverse current IRM
versus -diF/dt
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
Fig. 1 Forward current IF versus VF
TVJ= 100°C
VR = 600V TVJ= 100°C
VR = 600V
IF= 20A
IF= 10A
IF= 5A
Qr
IRM
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
IF= 20A
IF= 10A
IF= 5A
tfr VFR
Fig. 7 Transient thermal resistance junction to case
TVJ= 25°C
TVJ=100°C
TVJ=150°C
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.8776 0.0052
2 0.3378 0.0003
3 0.0678 0.0004
4 1.2168 0.0092
NOTE: Fig. 2 to Fig. 6 shows typical values
