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DATA SH EET

Product data sheet 2001 Feb 27

DISCRETE SEMICONDUCTORS

BAT854W series

Schottky barrier (double) diodes

k, h

alfpage

M3D102

2001 Feb 27 2

NXP Semiconductors Product data sheet

Schottky barrier (double) diodes BAT854W series

FEATURES

•Very low forward voltage

•Very low reverse current

•Guard ring protected

•Very small SMD plastic package.

APPLICATIONS

•Ultra high-speed switching

•Voltage clamping

•Protection circuits

•Blocking diodes

•Low power cons umption

applications (e.g. hand-held

applications).

DESCRIPTION

Planar Schottky barrier diode s

encapsulated in a SOT323 very small

SMD plastic packag e. Sing le diod es

and double diodes with different

pinning are availabl e.

MARKING

PINNING

TYPE NUMBER MARKING

CODE

BAT854W 81

BAT854AW 82

BAT854CW 83

BAT854SW 84

PIN SYMBOL

BAT854W

1 a

2n.c.

3 k

BAT854AW

1 k1

2 k2

3 a1,a2

BAT854CW

1 a1

2 a2

3 k1, k2

BAT854SW

1 a1

2 k2

3 k1, a2

handbook, 2 columns 3

MBC870

Top view

Fig.1 Simplified outline

SOT323 and pin

configuration.

MLC357

Fig.2 BAT854W single diode

configuration (sym bol).

MLC36

Fig.3 BAT854AW diode

configuration (sym bol).

MLC35

Fig.4 BAT854CW diode

configuration (sym bol).

MLC35

Fig.5 BAT854SW diode

configuration (sym bol).

2001 Feb 27 3

NXP Semiconductors Pr oduct dat a shee t

Schottky barrier (double) diodes BAT854W series

LIMITING VALUES

In accordance with the A bsolute Maxi mum Rating Sys tem (IEC 60134).

ELECTRICAL CHARACTERISTIC S

Tamb = 25 °C; unless otherwise specified.

Note

1. Pulse test: tp = 300 μs; δ = 0.02.

THERMAL CHARACTE RISTICS

Note

1. Refer to SOT323 standard mounting conditions.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

VRcontinuous revers e voltage −40 V

IFcontinuous forward current −200 mA

IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 −300 mA

IFSM non-repetitive peak forward current t = 8.3 ms half sinewave;

JEDEC method −1 A

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

Per diode

VFcontinuous forward v oltage see Fig.6

IF = 0.1 mA 200 −mV

IF = 1 mA 260 −mV

IF = 10 mA 340 −mV

IF = 30 mA −420 mV

IF = 100 mA −550 mV

IRcontinuous rev ers e current VR = 25 V; note 1; see Fig.7 −0.5 μA

Cddiode capacit an c e VR = 1 V; f = 1 MHz; see Fig.8 −20 pF

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 625 K/W

2001 Feb 27 4

NXP Semiconductors Pr oduct dat a shee t

Schottky barrier (double) diodes BAT854W series

GRAPHICAL DATA

handbook, halfpage

1.20.80.40

(1) (3)

VF (V)

(mA)

103

102

10−1

MLD546

(2)

Fig.6 Forward current as a function of forward

voltage; typical values.

(1) Tamb = 125 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

handbook, halfpage

4020100 VR (V)

(μA)

103

102

10−1

MLD547

(1)

(2)

(3)

Fig.7 Reverse current as a fun ction of reverse

voltage; typical values.

(1) Tamb = 125 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

handbook, halfpage

0VR (V)

(pF)

10 20 40

MLD548

Fig.8 Diode capacitance as a function of reverse

voltage; typical values.

f = 1 MHz; Tamb = 25 °C.

2001 Feb 27 5

NXP Semiconductors Pr oduct dat a shee t

Schottky barrier (double) diodes BAT854W series

PACKAGE OUTLINE

UNIT A1

max bpcD Ee1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.1

1.1

0.8 0.4

0.3 0.25

0.10 2.2

1.8 1.35

1.15 0.65

1.3 2.2

2.0 0.23

0.13 0.20.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT323 SC-70

detail X

vMA

0 1 2 mm

scale

Plastic surface mounted package; 3 leads SOT32

97-02-28

2001 Feb 27 6

NXP Semiconductors Pr oduct dat a shee t

Schottky barrier (double) diodes BAT854W series

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s) described in this document may have changed since this docu ment was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

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accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

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consequenc es of use of such information.

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reserves the right to make changes to informa tion

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

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not designed, au thorized or warran ted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reason ably be

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property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modificat ion.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratin gs only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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products are sold subject to the general terms and

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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The information pr e sent ed in this documen t d oes not form par t o f an y q uotation or contract, is believed to be a ccur ate a nd reliable and may be change d

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Customer notification

This data sheet was changed to reflect the new company name NXP Semicon ductors. No change s were

made to the content, except for the legal definitions and disclaimer s.

Printed in The Netherlands 613514/01/pp7 Date of release: 2001 Feb 27 Docum ent order number: 9397 750 07935