4
Absolute Maximum Ratings
Parameter AllnGaP InGaN Units
DC Forward Current [1] 350 350 mA
Peak Pulsing Current [2] 1000 1000 mA
Power Dissipation 910 1295 mW
LED Junction Temperature 125 150 °C
Operating Metal Slug Temperature Range at 350 mA -40 to +115 -40 to +135 °C
Storage Temperature Range -40 to +120 -40 to +120 °C
Soldering Temperature Refer to Figure 26
Reverse Voltage [3] Not recommended
Note:
1. Derate linearly based on Figure 10 for AlInGaP and Figure 22 for InGaN.
2. Pulse condition duty factor = 10%, Frequency = 1 kHz.
3. Not designed for reverse bias operation
Optical Characteristics at 350 mA (TJ = 25 °C)
Part Number Color
Peak
Wavelength,
λPEAK (nm)
Dominant
Wavelength,
λD [1] (nm)
Viewing
Angle,
2θ½ [2] (°)
Luminous
Efficiency
(lm/W)
Typ. Typ. Typ. Typ.
ASMT-JR10-ARS01 Red 635 625 165 56
ASMT-JA10-ARS01 Amber 598 590 165 56
ASMT-JH10-ARS01 Red Orange 625 615 165 56
ASMT-JG11-NST01 Green 519 525 165 59
ASMT-JB11-NLN01 Blue 460 470 165 13
ASMT-JL11-NMP01 Royal Blue 450 455 165 Not applicable
Part Number Color
Correlated Color Temperature,
CCT (Kelvin)
Viewing Angle,
2θ½ [2] (°)
Luminous Efficiency
(lm/W)
Min. Max. Typ. Typ.
ASMT-JW11-NTU01 Cool White 4500 10000 140 67
ASMT-JW11-NTV01 4500 10000 140 76
ASMT-JN11-NTU01 Neutral White 3500 4500 140 67
ASMT-JN11-NTV01 3500 4500 140 76
ASMT-JY11-NST01 Warm White 2700 3500 140 57
ASMT-JY11-NSU01 2700 3500 140 66
Notes:
1. The dominant wavelength, λD, is derived from the CIE Chromaticity Diagram and represents the color of the device.
2. θ½ is the off-axis angle where the luminous intensity is ½ the peak intensity.
Electrical Characteristic at 350 mA (TJ = 25°C)
Dice Type
Forward Voltage,
VF (Volts) at IF = 350mA
Thermal Resistance,
Rθj-ms(°C/W) [1]
Min. Typ Max. Typ.
AllnGaP 1.9 2.3 2.6 9
InGaN 2.8 3.4 3.7 9
Note:
1. Rθj-ms is Thermal Resistance from LED junction to metal slug.