MBR1030 thru 1060
MAXIMUM RATINGS AND ELECTRICAL CHARACT ERIST ICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
FEATURES
Me tal of silicon rectifier,ma jority carrier conducton
Guard ring for tr an s ient protec tio n
Low power loss, hi gh efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters ,free
wh elling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AC molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
MBR1030
30
21
30
Maximum Av erage Forward
Rectified Current (See Fig.1)
@T
C
=
125 C
Peak Forward Surge Current
8.3ms single half sine-w ave
superim pos ed on rated load (JEDEC METHOD)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Forward
Voltage
10
150
0.84
T
J
Operating Temperature Range
-55 to +150 C
T
STG
Storage Temperature Range
-55 to +175 C
Typical Thermal Resistance (Note 1)
2.5
C/W
T
J
=25 C
C
J
Typical Junction Capacitance (Note 2)
400
pF
I
R
@T
J
=125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25 C 0.1
15
mA
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
Voltage Rate of Change (Rated VR)
T
J
=125 C
R
0JC
dv/dt 10000
0.57
V/us
@ I
F
=20A
@ I
F
=10A
MBR1035
35
24.5
35
MBR1040
40
28
40
MBR1045
45
31.5
45
MBR1050
50
35
50
60
42
60
V
0.95
0.70
25
NOTES : 1.Thermal Resistanc e Junction to Case.
2.Measured at 1.0MHz and applied revers e voltage of 4.0V DC.
TO-220AC
All Dimensions in millimet er
TO-220AC
DIM. MIN. MAX.
A
C
D
E
F
G
H
B14.22 15.88
10.67
9.6 5
2.5 4 3.43
6.86
5.8 4
8.2 6 9.28
- 6.35
12.70 14.73
0.5 1 5.33
N
M
L
K
J
I 1.14
4.8 3
0.64 0.3 0
3.53 4.09
3.56 4.83
1.14 1.40
2.92
2.0 3
A
B
C
K
J
I
G
F
E
D
N
M
L
H
PIN 1
PIN 2 CASE
PIN
12
SCHOTT KY BA RRIER RECTIFIERS
REVERSE VOL TAGE
- 30
to
60
Volts
FORWARD CURRENT
- 10
Amperes
MBR1060
SEMICONDUCTOR
LITE-ON
REV. 3, 1 3-Sep-2001, K THA 0 8
RATING AND CHA RACTERISTIC CURVES
M B R 1 03 0 t h r u M B R 10 60
FIG.2 - MAXIMUM NO N-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES A T 60Hz
PE AK FOR WARD SU RGE CURREN T,
AMPERES
1 5 10 50 100220
0
25
50
75
100
125
150
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
25
75 100 125 150
2
050
8
175
CASE TEMPERATURE , C
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
6
0
4
RESISTIVE OR
INDUCTIVE LOAD
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
I NSTA NTANEO US FO RWARD CURR ENT ,( A)
0.2 0.3 0.7 0.8
1.0
10
100
0.4 0.5 0.6
0.1 1.0
0.9
INSTANTANEOUS FORWARD VOLTAGE , (VOLTS)
I NSTA NTANEO US FO RWARD CURR ENT ,( A)
0.1
1.0
10
100
0.1 PULSE WIDTH 300us
2% Duty cycle
TJ= 25 C
10
PERCENT O F RATE D PEAK RE VE RS E VOLTAG E, (%)
FIG.3 - TYPICAL REVERSE CHARACTERISTI CS
INSTANTANEOUS
REVERSE CURRENT ,(mA)
20 40 120 140
0
0.001
0.1
1.0
100
10
60 80 100
TJ= 100 C
0.01 TJ= 25 C
TJ= 75 C
MB R1030 ~ M B R104 5
MBR1050 ~ MBR1060
FIG.5 - TYPICAL JUNCTION CAPACITANCE
CAPACITANCE , (pF)
RE VERSE V OLTAGE , V OLTS
10
1100
10000
1000
100 0.1 4
TJ= 25 C, f= 1MHz
REV. 3, 13-Sep-2001, KTHA08