MCC 312 MCD 312 Thyristor Modules Thyristor/Diode Modules VRSM VDSM VRRM VDRM V 1300 1500 1700 1900 V 1200 1400 1600 1800 ITRMS = 2x 520 A 2x 320 A ITAVM = VRRM = 1200-1800 V 3 Type 7 6 2 MCC 312-12io1 MCC 312-14io1 MCC 312-16io1 MCC 312-18io1 MCD 312-12io1 MCD 312-14io1 MCD 312-16io1 MCD 312-18io1 5 4 1 E72873 Symbol Conditions Maximum Ratings ITRMS, IFRMS TVJ = TVJM ITAVM, IFAVM TC = 85C; 180 sine ITSM, IFSM I2t (di/dt)cr 520 320 A A TVJ = 45C; VR = 0 t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 9200 10100 A A TVJ = TVJM; VR = 0 t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 8000 8800 A A TVJ = 45C; VR = 0 t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 423 000 423 000 A2s A2s TVJ = TVJM; VR = 0 t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 320 000 321 000 A2s A2s 100 A/s TVJ = TVJM; repetitive, IT = 960 A f = 50 Hz; tp = 200 s; VD = 2/3 VDRM; IG = 1 A; diG /dt = 1 A/s non repetitive, IT = ITAVM 500 A/s 1000 V/s 120 60 20 W W W VRGM 10 V TVJ TVJM Tstg -40...+140 140 -40...+125 C C C 3000 3600 V~ V~ 4.5 - 7 11 - 13 Nm Nm 750 g (dv/dt)cr TVJ = TVJM; VD = 2/3 VDRM; RGK = ; method 1 (linear voltage rise) PGM TVJ = TVJM; tp = 30 s IT = IT(AV)M; tp = 500 s PGAV VISOL 50/60 Hz, RMS IISOL < 1 mA Md Mounting torque (M6) Terminal connection torque (M8) Weight Typical including screws t = 1 min t=1s Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2013 IXYS All rights reserved 3 6 7 1 5 4 2 3 1 5 4 2 MCC MCD Features * International standard package * Direct Copper Bonded Al2O3-ceramic with copper base plate * Planar passivated chips * Isolation voltage 3600 V~ * UL registered, E 72873 * Keyed gate/cathode twin pins Applications * Motor control, softstarter * Power converter * Heat and temperature control for industrial furnaces and chemical processes * Lighting control * Solid state switches Advantages * Simple mounting * Improved temperature and power cycling * Reduced protection circuits 20130813c 1-5 MCC 312 MCD 312 Symbol Conditions typ. IRRM, IDRM VR / VD = VRRM / VDRM TVJ = TVJM VT, VF IT; IF = 600 A VT0 rt VGT max. 40 mA TVJ = 25C 1.32 V For power-loss calculations only TVJ = TVJM 0.8 0.68 V mW VD = 6 V VD = 6 V TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C 2 3 150 220 V V mA mA VGD IGD VD = 2/3 VDRM; TVJ = TVJM 0.25 10 V mA IL tp = 30 s; VD = 6 V IG = 0.45 A; diG /dt = 0.45 A/s TVJ = 25C 200 mA IH VD = 6 V; RGK = ; TVJ = 25C 150 mA tgd VD = 1/2VDRM IG = 1 A; diG /dt = 1 A/s TVJ = 25C 2 s tq VD = 2/3 VDRM dv/dt = 50 V/s; -di/dt = 10 A/s IT = 300 A; VR = 100 V; tp = 200 s TVJ = TVJM QS IRM IT = 300 A; -di/dt = 50 A/s TVJ = TVJM RthJC IGT RthJK dS dA a 10 Characteristic Values 200 VG 1: IGT, TVJ = 130C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C 1 1 4 3 2 5 6 [V] 4: PGM = 20 W 5: PGM = 60 W 6: PGM = 120 W IGD, TVJ = 130C 0.1 10-3 10-2 10-1 100 101 102 IG [A] Fig. 3 Surge overload current ITSM/FSM: Crest value, t: duration 100 TVJ = 25C s typ. 760 275 C A per thyristor; DC current per module per thyristor; DC current per module 0.12 0.06 0.16 0.08 K/W K/W K/W K/W Creeping distance on surface Creepage distance in air Maximum allowable acceleration 12.7 9.6 50 mm mm m/s2 tgd limit 10 [s] 1 10 0.01 100 0.1 1000 1 IG [A] 10000 10 Fig. 2 Gate trigger delay time IXYS reserves the right to change limits, test conditions and dimensions. (c) 2013 IXYS All rights reserved 20130813c 2-5 MCC 312 MCD 312 Dimensions in mm (1 mm = 0.0394") SW 13 M8 x 20 43 45 10 32 +0 -1,9 52 +0 -1,4 49 2 2.8 x 0.8 28.5 1 2 38 50 35 5 22.5 45 67 18 20 3 6.2 80 92 115 Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 3751 Type ZY 180R (R = Right for pin pair 6/7) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2013 IXYS All rights reserved 20130813c 3-5 MCC 312 MCD 312 10000 106 600 VR = 0 V 50 Hz 80 % VRRM TVJ = 45C TVJ = 140C 8000 IT(F)SM DC 180 sin 120 60 30 500 TVJ = 45C I2dt 6000 [A] I TVJ = 140C 105 [A] 2 [A s] 4000 400 F(T)AVM 300 200 2000 100 0 0.001 0.01 0.1 104 1 t [s] Fig. 3 Surge overload current IT(F)SM:Crest value, t: duration 1 t [ms] 2 Fig. 4 I dt versus time 10 0 0 25 50 75 100 125 150 TC [C] Fig. 4a Max. forward current at case temperature 600 RthKA K/W 0.06 0.1 0.2 0.3 0.4 0.6 0.8 500 400 Ptot 300 DC 180 sin 120 60 30 [W] 200 100 0 0 100 200 300 400 500 0 25 50 IFAVM/TAVM [A] 75 100 125 150 TA [C] Fig. 5 Power dissipation versus on-state current and ambient temperature (per thyristor or diode) 3000 RthKA K/W 0.02 0.04 0.07 0.1 0.15 0.2 0.3 2500 2000 Ptot 1500 [W] Circuit B6 3xMCC312 or 1000 3xMCD312 500 0 0 200 400 600 800 IDAVM [A] 0 25 50 75 100 125 150 TA [C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature IXYS reserves the right to change limits, test conditions and dimensions. (c) 2013 IXYS All rights reserved 20130813c 4-5 MCC 312 MCD 312 3000 RthKA K/W 2500 Ptot 0.02 0.04 0.07 0.1 0.15 0.2 0.3 2000 1500 [W] Circuit W3 3xMCC312 or 3xMCD312 1000 500 0 0 200 400 600 A 0 25 50 IRMS [A] 75 100 125 150 TA [C] Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 0.20 RthJC for various conduct. angles d: d DC 180 120 60 30 0.15 ZthJC 0.10 30 60 120 180 DC [K/W] 0.05 0.00 10-3 10-2 10-1 t [s] 100 RthJC (K/W) 0.120 0.128 0.135 0.153 0.185 Constants for ZthJC calculation: 101 102 i 1 2 3 4 Rthi (K/W) 0.0058 0.031 0.072 0.0112 ti (s) 0.00054 0.098 0.54 12 Fig. 8 Transient thermal impedance junction to case (per thyristor/diode) RthJK for various conduct. angles d: 0.25 d DC 180 120 60 30 0.20 0.15 ZthJK 0.10 0.05 0.00 10-3 Constants for ZthJK calculation: 30 60 120 180 DC [K/W] 10-2 10-1 100 101 102 t [s] Fig. 9 Transient thermal impedance junction to heatsink (per thyristor/diode) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2013 IXYS All rights reserved RthJK (K/W) 0.160 0.168 0.175 0.193 0.225 i 1 2 3 4 5 Rthi (K/W) 0.0058 0.031 0.072 0.0112 0.0400 ti (s) 0.00054 0.0980 0.540 1200 12 20130813c 5-5