HMC320MS8G / 320MS8GE v03.0308 LOW NOISE AMPLIFIERS - SMT 8 GaAs MMIC LOW NOISE AMPLIFIER , 5 - 6 GHz Typical Applications Features The HMC320MS8G(E) is ideal for: * UNII Selectable Functionality: LNA, Driver, or LO Buffer Amp * HiperLAN Adjustable Input IP3 Up to +10 dBm +3V Operation Ultra Small 8 Lead MSOP: 14.8 x 14.8 x 1 mm Functional Diagram General Description The HMC320MS8G & HMC320MS8GE are low cost C-band fixed gain Low Noise Amplifiers (LNA). The HMC320MS8G & HMC320MS8GE operate using a single positive supply that can be set between +3V and +5V. With +3V bias, the LNA provides a noise figure of 2.5 dB, 1 dB gain and better than 10 dB return loss across the UNII band. The HMC320MS8G & HMC320MS8GE also feature an adaptive baising that allows the user to select the optimal P1dB performance for their system using an external set resistor on the "RES" pin. P1dB performance can be set between a range of +1 dBm to +13 dBm. The low cost LNA uses an 8-leaded MSOP ground base surface mount plastic package, which occupies less than 14.8 mm2. Electrical Specifi cations, TA = +25 C, Vdd = +3V Low Power* (VSET = 0V, Idd = 7 mA) Medium Power* (VSET = 3V, Idd = 25 mA) High Power* (VSET = 3V, Idd = 40 mA) Min. Max. Min. Max. Min. 10 16 8 12 16 9 Gain Variation over Temperature 0.025 0.035 0.025 0.035 Gain Flatness 0.5 Parameter Frequency Range Gain Typ. 5-6 8 Noise Figure 2.7 Input Return Loss Typ. 5-6 2.5 GHz 13 16 dB 0.025 0.035 dB/C 1.5 3.8 2.6 dB 3.8 dB 4 10 4 10 4 10 Output Return Loss 7 13 10 18 10 20 dB Output Power for 1 dB Compression (P1dB) -4 -1 6 9 9 12 dBm Input Third Order Intercept Point (IIP3) -3 1 4 8 6 10 dBm 40 mA Supply Current (Idd) 7 25 * RBIAS resistor value sets current. See adaptive biasing application note. 8 - 20 Units Max. 5-6 1.0 3.8 Typ. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com dB HMC320MS8G / 320MS8GE v03.0308 GaAs MMIC LOW NOISE AMPLIFIER , 5 - 6 GHz 15 16 10 14 12 0 GAIN (dB) RESPONSE (dB) 5 -5 -10 -15 -20 10 8 6 Low Power Bias Medium Power Bias High Power Bias 4 S11 S21 S22 -25 2 -30 0 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 4 4.5 FREQUENCY (GHz) 5.5 6 6.5 7 6.5 7 6.5 7 Input Return Loss @ Three Bias Conditions 0 16 14 -5 RETURN LOSS (dB) 12 GAIN (dB) 5 FREQUENCY (GHz) Gain vs. Temperature Medium Power Bias 10 8 6 +25 C +85 C -40 C 4 -10 -15 Low Power Bias Medium Power Bias High Power Bias -20 -25 2 0 -30 4 4.5 5 5.5 6 6.5 4 7 4.5 FREQUENCY (GHz) 5.5 6 Output Return Loss @ Three Bias Conditions 0 5 Low Power Bias Medium Power Bias High Power Bias -5 RETURN LOSS (dB) 4 3 2 +25 C +85 C -40 C 1 0 4.5 5 FREQUENCY (GHz) Noise Figure vs. Temperature Medium Power Bias NOISE FIGURE (dB) 8 Gain @ Three Bias Conditions LOW NOISE AMPLIFIERS - SMT Broadband Gain & Return Loss Medium Power Bias -10 -15 -20 -25 -30 5 5.5 FREQUENCY (GHz) 6 6.5 4 4.5 5 5.5 6 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 21 HMC320MS8G / 320MS8GE v03.0308 8 GaAs MMIC LOW NOISE AMPLIFIER , 5 - 6 GHz Noise Figure @ Three Bias Conditions Input IP3 @ Three Bias Conditions 15 10 IP3 (dBm) NOISE FIGURE (dB) 4 3 2 0 4.5 5 5.5 5 Low Power Bias Medium Power Bias High Power Bias 0 Low Power Bias Medium Power Bias High Power Bias 1 6 -5 4.5 6.5 5 FREQUENCY (GHz) 5.5 6 6.5 FREQUENCY (GHz) Output 1dB Compression @ Three Bias Conditions Reverse Isolation @ Three Bias Conditions 0 15 REVERSE ISOLATION (dB) 13 11 9 P1dB (dBm) LOW NOISE AMPLIFIERS - SMT 5 7 5 Low Power Bias Medium Power Bias High Power Bias 3 1 -1 Low Power Bias Medium Power Bias High Power Bias -10 -20 -30 -40 -50 -3 -5 4.5 -60 5 5.5 FREQUENCY (GHz) 8 - 22 6 6.5 4 4.5 5 5.5 6 6.5 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7 HMC320MS8G / 320MS8GE v03.0308 GaAs MMIC LOW NOISE AMPLIFIER , 5 - 6 GHz Optimizing P1dB Performance The bias level may be changed to adjust the P1dB and return loss performance. The table below contains the HMC320MS8G RF performance as a function of various VSET and RBIAS settings. It will be necessary for the VSET voltage source to provide 100uA of current to the amplifier. The Idd and Vdd quiescent performance will not change as a function of changing the VSET voltage. RF Performance at 5.8 GHz (Vdd = +3V) Output Return Loss (dB) VSET (VDC) RBIAS Resistor Between Pin 3 and GND (Ohms) 0 174 7 1.0 16.0 3 22 25 9.0 12.0 3 7 40 13.0 15.0 3 GND (No Resistor) 60 14.0 15.0 Idd (mA) Output P1dB (dBm) Applying the adaptive biasing A dynamically controlled bias can be implemented with this design. A typical application wil include sensing an RF signal level and then adjusting the VSET. The bias adjustment can be accomplished by either analog or digitals means, after the RF signal has been detected and translated to a DC voltage using external power detection circuitry. LOW NOISE AMPLIFIERS - SMT 8 Adaptive Biasing Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 23 HMC320MS8G / 320MS8GE v03.0308 LOW NOISE AMPLIFIERS - SMT 8 GaAs MMIC LOW NOISE AMPLIFIER , 5 - 6 GHz Absolute Maximum Ratings Drain Bias Voltage (Vdd) +7.0 Vdc Control Voltage Range (VSET) 0 to Vdd RF Input Power (RFIN)(Vdd = +3.0 Vdc) +5 dBm Channel Temperature Truth Table VSET 150 C Continuous Pdiss (T = 85 C) (derate 2.98 mW/C above 85 C) 0.194 W Thermal Resistance (channel to ground paddle) 336 C/W Storage Temperature -65 to +150 C Operating Temperature -40 to +85 C ESD Sensitivity (HBM) Class 1A Operating Current Idd Operating State Resistor Rbias 0V 7 mA Low Power 174 Ohm 3V 25 mA Medium Power 22 Ohm 3V 40 mA High Power 7 Ohm Set external bias resistor (RBIAS) to achieve desired operating current, 0 < RBIAS < 200 Ohm. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC320MS8G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC320MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H320 XXXX [2] H320 XXXX [1] Max peak reflow temperature of 235 C [2] Max peak reflow temperature of 260 C [3] 4-Digit lot number XXXX 8 - 24 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC320MS8G / 320MS8GE v03.0308 GaAs MMIC LOW NOISE AMPLIFIER , 5 - 6 GHz 8 LOW NOISE AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 103907 [1] Item Description J1, J2 PCB Mount SMA Connector J3, J4, J5 DC Pins R1 22 Ohm Resistor, 0603 Pkg. U1 HMC320MS8G / HMC320MS8GE Amplifier PCB [2] 103905 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 25