BD139 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 3
www.unisonic.com.tw QW-R204-007.C
ABSOLUTE MAXIM UM RATING
Collector-Bas e Voltage VCBO 100 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 5 V
Collector Current (DC) IC 1.5 A
Peak Collector Curr ent ICM 2 A
Peak Base Current lBM 1 A
Power Dissipation (Ta=25°C) TO-126 PD 1.25 W
TO-251
W
Junction Temperature TJ
°C
Operating Temperature TOPR
°C
Storage Temper ature TSTG
°C
Note:
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute ma ximum ratings ar e s tress ratings only and functi onal device operation is not im pl ied.
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
Collector Cut-Off Current ICBO IE=0, VCB=30V 100 nA
IE=0, VCB=30V, TJ=125°C 10 μA
Emitter Cut-Off Current IEBO IC=0, VEB=5V 100 nA
DC Current Gain hFE VCE=2V (See Fig.1) IC=5mA 40
IC =150mA 63 250
IC =500mA 25
DC Current Gain BD139-10 IC =150mA, VCE=2V ( S ee Fig.1) 63 160
BD139-16 100 250
Collector-Em itter Saturation Voltage VCE(SAT) IC =500 mA, IB=50mA 0.5 V
Base-Emitter Volt age VBE IC =500 mA, VCE=2V 1 V
Transition Frequency fT IC =500 mA, VCE=5V, f=100MHz 190 MHz