1. Product profile
1.1 General description
130 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
[1] 10 MHz carrier spacing PAR 7 dB at 0.01 % probability on CCDF, 3GPP test model 1, 1 - 64 DPCH.
1.2 Features
nTypical 2-carrier W-CDMA performance at a supply voltage of 28 V and an IDq of
1150 mA:
uAverage output power = 33 W
uPower gain = 13.8 dB
uEfficiency = 26 %
uACPR = −41 dBc
uIMD3 = −37 dBc
nEasy power control
nIntegrated ESD protection
nExcellent ruggedness (> 10 : 1 VSWR at 130 W (CW))
nHigh efficiency
nHigh peak power capability (> 190 W)
nExcellent thermal stability
nDesigned for broadband operation (2000 MHz to 2200 MHz)
nInternally matched for ease of use
BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
Rev. 01 — 3 July 2007 Product data sheet
Table 1. Typical performance
T
case
= 25
°
C in a common source class-AB test circuit.
Mode of operation f VDS PL(AV) GpηDIMD3 ACPR
(MHz) (V) (W) (dB) (%) (dBc) (dBc)
2-carrier W-CDMA[1] f1= 2135;
f2= 2145 28 33 13.5 26 −37 −41
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
BLF4G22-130_4G22LS-130_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 July 2007 2 of 13
NXP Semiconductors BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
1.3 Applications
nRF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range.
2. Pinning information
[1] Connected to flange
3. Ordering information
4. Limiting values
Table 2. Pinning
Pin Description Simplified outline Symbol
BLF4G22-130 (SOT502A)
1 drain
2 gate
3 source [1]
BLF4G22LS-130 (SOT502B)
1 drain
2 gate
3 source [1]
3
2
1
sym112
1
3
2
3
2
1
sym112
1
3
2
Table 3. Ordering information
Type number Package
Name Description Version
BLF4G22-130 - flanged LDMOST ceramic package; 2 mounting holes;
2 leads SOT502A
BLF4G22LS-130 - earless flanged LDMOST ceramic package; 2 leads SOT502B
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage −0.5 +15 V
IDdrain current - 15 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 200 °C
BLF4G22-130_4G22LS-130_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 July 2007 3 of 13
NXP Semiconductors BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
5. Thermal characteristics
6. Characteristics
7. Application information
7.1 Ruggedness in class-AB operation
The BLF4G22-130 and the BLF4G22LS-130 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 1150 mA; PL = 130 W (CW).
Table 5: Thermal characteristics
Symbol Parameter Conditions Type Typ Max Unit
Rth(j-case) thermal resistance from
junction to case Tcase =80°C;
PL=33W BLF4G22-130 0.56 0.65 K/W
BLF4G22LS-130 0.50 0.59 K/W
Table 6. Characteristics
T
j
= 25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown
voltage VGS =0V; I
D= 2.1 mA 65 - - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID= 230 mA 2.5 3.1 3.5 V
IDSS drain leakage current VGS =0V; V
DS =28V--5µA
IDSX drain cut-off current VGS =V
GS(th) +6 V;
VDS =10V 35 44 - A
IGSS gate leakage current VGS = +15 V; VDS = 0 V - - 420 nA
gfs forward transconductance VDS = 10 V; ID= 12.8 A - 11 - S
RDS(on) drain-source on-state
resistance VGS =V
GS(th) + 6 V;
ID= 7.7 A - 0.07 - Ω
Crs feedback capacitance VGS =0V; V
DS =28V;
f = 1 MHz - 3.4 - pF
Table 7. Application information
Mode of operation: 2-carrier W-CDMA, PAR 7 dB at 0.01 % probability on CCDF,
3GPP test model 1, 1-64 DPCH; f
1
= 2112.5 MHz; f
2
= 2122.5 MHz; f
3
= 2157.5 MHz;
f
4
= 2167.5 MHz.
Symbol Parameter Conditions Min Typ Max Unit
Gppower gain PL(AV) = 33 W 12.5 13.5 - dB
RLin input return loss PL(AV) =33W −9−15 - dB
ηDdrain efficiency PL(AV) =33W 24 26 - %
IMD3 third order intermodulation
distortion PL(AV) =33W - −37 −34 dBc
ACPR adjacent channel power ratio PL(AV) =33W - −41 −39 dBc
BLF4G22-130_4G22LS-130_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 July 2007 4 of 13
NXP Semiconductors BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
VDS = 28 V; IDq = 900 mA; Tcase = 25 °C;
f = 1990 MHz. VDS = 28 V; IDq = 900 mA; Tcase = 25 °C;
f = 1990 MHz.
Fig 1. 2-Carrier W-CDMA power gain and drain
efficiency as functions of average load power;
typical values
Fig 2. 2-Carrier W-CDMA IMD3 and ACPR as functions
of average load power; typical values
001aag620
PL(AV) (W)
0504020 3010
20
10
30
40
Gp
(dB)
0
20
10
30
40
ηD
(%)
0
ηD
Gp
001aag621
PL(AV) (W)
0504020 3010
−35
−45
−25
−15
IMD3
ACPR
(dBc)
−55
IMD3
ACPR
Table 8. Typical impedance
V
DS
= 28 V; I
Dq
= 1150 mA; P
L(AV)
= 33 W; T
case
= 25
°
C.
f ZSZL
MHz Ω Ω
2110 1.9 − j2.8 1.7 − j1.8
2140 1.8 − j2.7 1.6 − j1.6
2170 1.7 − j2.6 1.5 − j1.4
BLF4G22-130_4G22LS-130_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 July 2007 5 of 13
NXP Semiconductors BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
(1) IDq = 850 mA
(2) IDq = 975 mA
(3) IDq = 1150 mA
(4) IDq = 1350 mA
(5) IDq = 1550 mA
VDS = 28 V; f1= 2140.0 MHz; f2= 2140.1 MHz.
(1) IDq = 850 mA
(2) IDq = 975 mA
(3) IDq = 1150 mA
(4) IDq = 1350 mA
(5) IDq = 1550 mA
VDS = 28 V; f1= 2140.0 MHz; f2= 2140.1 MHz.
Fig 3. Two-tone power gain as a function of peak
envelope load power; typical values Fig 4. Third order intermodulation distortion as a
function of peak envelope load power; typical
values
ton = 8 µs; toff = 1 ms.
(1) PL(1dB) = 174 W (= 52.4 dBm)
(2) PL(3db) = 209 W (= 53.2 dBm)
Fig 5. Pulsed peak power capability; typical values Fig 6. Time in hours to 50 % cumulative failure (t50%)
due to electromigration as function of junction
temperature
001aag622
12
14
16
Gp
(dB)
10
PL(PEP) (W)
110
3
102
10
(5)
(4)
(3)
(2)
(1)
001aag623
PL(PEP) (W)
110
3
102
10
−50
−40
−60
−30
−20
IMD3
(dBc)
−70
(5)
(4)
(3)
(2)
(1)
001aag624
PL (W)
0 24016080
11
13
15
Gp
(dB)
9
(1)
(2)
001aag625
Tj (°C)
80 240200120 160
t50% × IDS2
(h × A2)
108
107
1010
109
1011
106
xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx
xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx
xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx
xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x
BLF4G22-130_4G22LS-130_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 July 2007 6 of 13
NXP Semiconductors BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
8. Test information
See Table 9 for list of components.
Fig 7. Schematic test circuit for operation at 2.14 GHz
C15
C16
C14
C11
C10
DUT
L6
C6
L7
C5
C3
C2
C4
C12 C13
VDD
R1
VGG
C1
C7
L2
L1
L3
L4
L5 L8
L9
L10 L11 L12 L13
L14 C8 C9
001aac275
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx
xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx
xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx
BLF4G22-130_4G22LS-130_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 July 2007 7 of 13
NXP Semiconductors BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
The components are situated on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) (εr = 3.5); thickness = 0.76 mm. The other side is unetched and
serves as a ground plane.
See Table 9 for list of components.
Fig 8. Component layout for 2.14 GHz test circuit
L8
L5
L6
L4
L3L2
L1
L7
L9
L10
C16
C8 C9 C10
C15
C14
C13
C12
C11
C6
C4
C5
C3
C1
VGG R1
C2
C7
L14
L11 L12 L13
001aac276
50 mm
75 mm
BLF4G22-130_4G22LS-130_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 July 2007 8 of 13
NXP Semiconductors BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
[3] Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) (εr = 3.5); thickness = 0.76 mm.
Table 9. List of components (see Figure 7 and Figure 8)
Component Description Value Remarks
C1, C2, C11 tantalum capacitor 10 µF; 35 V
C3 multilayer ceramic chip capacitor 4.7 µF; 25 V
C4, C10 multilayer ceramic chip capacitor 8.2 pF [2]
C5, C8, C14, C15 multilayer ceramic chip capacitor 1.5 µF; 50 V
C6 multilayer ceramic chip capacitor 0.6 pF [1]
C7 multilayer ceramic chip capacitor 4.7 pF [2]
C9 multilayer ceramic chip capacitor 220 nF; 50 V
C12 electrolytic capacitor 220 µF; 63 V
C13 tantalum capacitor 4.7 µF; 50 V
C16 multilayer ceramic chip capacitor 7.5 pF [1] ATC180R
L1 stripline Z0 = 50 Ω[3] (W × L) 32.3 mm × 1.7 mm
L2 stripline Z0 = 50 Ω[3] (W × L) 2.2 mm × 1.7 mm
L3 stripline Z0 = 24 Ω[3] (W × L) 2.3 mm × 4.8 mm
L4 stripline Z0 = 15 Ω[3] (W × L) 2.4 mm × 8 mm
L5 stripline Z0 = 9.5 Ω[3] (W × L) 9.3 mm × 14 mm
L6 stripline Z0 = 60 Ω[3] (W × L) 4 mm × 1.2 mm
L7 stripline Z0 = 60 Ω[3] (W × L) 14.5 mm × 1.2 mm
L8 stripline Z0 = 8.2 Ω[3] (W × L) 9.3 mm × 16.8 mm
L9 stripline Z0 = 5.5 Ω[3] (W × L) 3 mm × 25.8 mm
L10 stripline Z0 = 50 Ω[3] (W × L) 11 mm × 1.7 mm
L11 stripline Z0 = 50 Ω[3] (W × L) 9.5 mm × 1.7 mm
L12 stripline Z0 = 34 Ω[3] (W × L) 3 mm × 3 mm
L13 stripline Z0 = 50 Ω[3] (W × L) 12.7 mm × 1.7 mm
L14 stripline Z0 = 43 Ω[3] (W × L) 13.5 mm × 2.1 mm
R1 SMD resistor 4.7 Ω; 0.1 W
BLF4G22-130_4G22LS-130_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 July 2007 9 of 13
NXP Semiconductors BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
9. Package outline
Fig 9. Package outline SOT502A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT502A 99-12-28
03-01-10
0 5 10 mm
scale
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A
p
L
AF
b
D
U2
H
Q
c
1
3
2
D1
E
A
C
q
U1
C
B
E1
M M
w2
UNIT A
mm
Db
12.83
12.57 0.15
0.08 20.02
19.61 9.53
9.25 19.94
18.92 9.91
9.65
4.72
3.43
cU2
0.25 0.5127.94
qw
2
w1
F
1.14
0.89
U1
34.16
33.91
L
5.33
4.32
p
3.38
3.12
Q
1.70
1.45
EE
1
9.50
9.30
inches 0.505
0.495 0.006
0.003 0.788
0.772
D1
19.96
19.66
0.786
0.774 0.375
0.364 0.785
0.745 0.390
0.380
0.186
0.135 0.01 0.021.100
0.045
0.035 1.345
1.335
0.210
0.170 0.133
0.123 0.067
0.057
0.374
0.366
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
w1AB
M M M
BLF4G22-130_4G22LS-130_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 July 2007 10 of 13
NXP Semiconductors BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
Fig 10. Package outline SOT502B
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT502B 03-01-10
07-05-09
0 5 10 mm
scale
Earless flanged LDMOST ceramic package; 2 leads SOT502B
AF
b
D
U2
L
H
Q
c
1
3
2
D1
E
D
U1
D
E1
M M
w2
UNIT A
mm
Db
12.83
12.57 0.15
0.08 20.02
19.61 9.53
9.25 19.94
18.92 9.91
9.65
4.72
3.43
cU2
0.25
w2
F
1.14
0.89
U1
20.70
20.45
L
5.33
4.32
Q
1.70
1.45
EE
1
9.50
9.30
inches 0.505
0.495 0.006
0.003 0.788
0.772
D1
19.96
19.66
0.786
0.774 0.375
0.364 0.785
0.745 0.390
0.380
0.186
0.135 0.010
0.045
0.035 0.815
0.805
0.210
0.170 0.067
0.057
0.374
0.366
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
BLF4G22-130_4G22LS-130_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 July 2007 11 of 13
NXP Semiconductors BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
10. Abbreviations
11. Revision history
Table 10. Abbreviations
Acronym Description
3GPP Third Generation Partnership Project
ACPR Adjacent Channel Power Ratio
CCDF Complementary Cumulative Distribution Function
CW Continuous Wave
DPCH Dedicated Physical CHannel
EDGE Enhanced Data rates for GSM Evolution
EVM Error Vector Magnitude
GSM Global System for Mobile communications
LDMOS Laterally Diffused Metal Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
PAR Peak-to-Average power Ratio
RF Radio Frequency
VSWR Voltage Standing Wave Ratio
W-CDMA Wideband Code Division Multiple Access
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF4G22-130_4G22LS-130_1 20070703 Product data sheet - -
BLF4G22-130_4G22LS-130_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 July 2007 12 of 13
NXP Semiconductors BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
© NXP B.V. 2007. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 3 July 2007
Document identifier: BLF4G22-130_4G22LS-130_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation. . . . . . . . . . 3
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13 Contact information. . . . . . . . . . . . . . . . . . . . . 12
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
