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3-13
3
LINEAR CATV
AMPLIFIERS
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS SiGe HBT Si CMOS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
NC
GND
GND
RF IN
NC
GND
GND
NC
NC
GND
GND
RF OUT
NC
GND
GND
NC
RF2317
LINE AR CATV AMP L IF IER
• CATV Distribution Amplifiers
• Cable Modems
• Broadband Gain Blocks
• Laser Diode Driver
• Return Channel Amplifier
• Base Stations
The RF2317 is a general purpose, low-cost high-linearity
RF amplifier IC. The device is manufactured on an
advanced Gallium Arsenide Heterojunction Bipolar Tran-
sistor (HBT) process, and has been designed for use as
an easily cascadable 75Ωgain block. The gain flatness of
better than ±0.5dB from 50MHz to 1000MHz, and the
high linearity, make this part ideal for cable TV applica-
tions. Other applications include IF and RF amplification
in wireless voice and data communication products oper-
ating in frequency bands up to 3GHz. The device is self-
contained with 75Ωinput and output impedances and
requires only two external DC biasing elements to oper-
ate as specified.
• DC to 3.0GHz Operation
• Internally Matched Input and Output
• 15dB Small Signal Gain
• 4.9dB Noise Figure
• +26dBm Output Power
• Single 9V to 12V Power Supply
RF2317 Linear CATV Amplifier
RF2317 PCBA Fully Assembled Evaluation Board - 50Ω
RF2317 PCBA Fully Assembled Evaluation Board - 75Ω
3
Rev A16 010816
0.068
0.064
0.020
0.014
0.034 REF
0.068
0.053
0.009
0.007
0.034
0.016
8° MAX
0° MIN
0.244
0.229
0.393
0.386
0.157
0.150
0.020
REF
0.008
0.004
-A-
Package St yl e: CJ2BAT 0
3-14
RF2317
Rev A16 010816
3
LINEAR CATV
AMPLIFIERS
Absolute Maximum Ratings
Parameter Rating Unit
Device Current 250 mA
Input RF Power +18 dBm
Output Load VSWR 20:1
Ambient Operating Temperature -40 to +85 °C
Storage Temperature -40 to +150 °C
Parameter Specification Unit Condition
Min. Typ. Max.
Overall (50Ω)T=25°C,ICC=180mA, RC=11Ω,50ΩSys-
tem
Frequency Range DC 3000 MHz 3dB Bandwidth
Gain 13.5 14.5 15.0 dB
Noise Figure 4.9 dB From 100MHz to 1000MHz
Input VSWR 1.7 Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
Output VSWR 2.2 Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
Output IP3+42 dBm At 100MHz
+37 +40 dBm At 500MHz
+38 dBm At 900MHz
Output IP2+63 dBm F1=400MHz,F2=500MHz, FOUT=100MHz
Output P1dB +25.5 dBm At 100MHz
+24 dBm At 500MHz
+22 dBm At 900MHz
Saturated Output Power +26 dBm At 100MHz
+25 dBm At 500MHz
+23 dBm At 900MHz
Reverse Isolation 20 dB
Thermal
ThetaJC 47 °C/W ICC=150mA, PDISS =1.3W, TAMB=85°C
Maximum Junction Temperature 153 °C
Mean Time Between Failures 8.6x102years TAMB=+85°C
1.8x105years TAMB=+25°C
ThetaJC 54 °C/W ICC=180mA, PDISS =1.7W, TAMB=85°C
Maximum Junction Temperature 177 °C
Mean Time Between Failures 99 years TAMB=+85°C
9.4x103years TAMB=+25°C
Power Supply
Device Voltage 8.3 V On pin 13, ICC=150mA
8.7 V On pin 13, ICC=180mA
Operating Current Range 100 180 mA Actual current determined by VCC and RS
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
3-15
RF2317
Rev A16 010816
3
LINEAR CATV
AMPLIFIERS
Parameter Specification Unit Condition
Min. Typ. Max.
Overall (75Ω)T=25°C,ICC=180mA, RC=11Ω,
75ΩSystem
Frequency Range DC 3000 MHz 3dB Bandwidth
Gain 15.0 dB
Noise Figure 5.3 dB From 100MHz to 1000MHz
Input VSWR 1.1:1 Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
Output VSWR 1.5:1 Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
Output IP3+42 dBm At 100MHz
+37 +40 dBm At 500MHz
+38 dBm At 900MHz
Output IP2+63 dBm F1=400MHz, F2=500MHz, FOUT=100MHz
Output P1dB +24 dBm At 100MHz
+23 dBm At 500MHz
+21 dBm At 900MHz
Saturated Output Power +25 dBm At 100MHz
+24 dBm At 500MHz
+22 dBm At 900MHz
Reverse Isolation 20 dB
79 Channels 10dBmV per channel, flat, at the input of the
amplifier; ICC=150mA, VCC=10.6V
XMOD -110 dBc At 55.25MHz
-78 dBc At 331.25MHz
-75 dBc At 547.25MHz
CTB -88 dBc At 55.25MHz
-88 dBc At 331.25MHz
-88 dBc At 547.25MHz
CSO+1.25MHz -93 dBc At 55.25MHz
-78 dBc At 331.25MHz
-70 dBc At 547.25MHz
CSO-1.25MHz -68 dBc At 55.25MHz
-78 dBc At 331.25MHz
-85 dBc At 547.25MHz
110 Channels 10dBmV per channel, flat, at the input of the
amplifier; ICC=150mA, VCC=10.6V
XMOD -91 dBc At 55.25MHz
-77 dBc At 331.25MHz
-75 dBc At 547.25MHz
CTB -86 dBc At 55.25MHz
-85 dBc At 331.25MHz
-85 dBc At 547.25MHz
CSO+1.25MHz -92 dBc At 55.25MHz
-78 dBc At 331.25MHz
-71 dBc At 547.25MHz
CSO-1.25MHz -63 dBc At 55.25MHz
-68 dBc At 331.25MHz
-81 dBc At 547.25MHz
3-16
RF2317
Rev A16 010816
3
LINEAR CATV
AMPLIFIERS
Pin Function Description Interface Schematic
1NC
This pin is internally not connected.
2GND
Ground connection. Keep traces physically short and connect immedi-
ately to ground plane for best performance. Each ground pin should
have a via to the ground plane.
3GND
Same as pin 2.
4RFIN
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instabil-
ity.
5NC
This pin is internally not connected.
6GND
Same as pin 2.
7GND
Same as pin 2.
8NC
This pin is internally not connected.
9NC
This pin is internally not connected.
10 GND Same as pin 2.
11 GND Same as pin 2.
12 NC This pin is internally not connected.
13 RF OUT RF output and bias pin. Because DC is present on this pin, a DC block-
ing capacitor, suitable for the frequency of operation, should be used in
most applications. For biasing, an RF choke in series with a resistor is
needed. The DC voltage on this pin is typically 8.3V with a current of
150mA. See device voltage versus device current plot. In lower power
applications the value of RCcan be increased to lower the current and
VDon this pin.
14 GND Same as pin 2.
15 GND Same as pin 2.
16 NC This pin is internally not connected.
RF OUT
RF IN
3-17
RF2317
Rev A16 010816
3
LINEAR CATV
AMPLIFIERS
Application Schematic
5MHz to 50MHz Rever s e Path
Evaluation Board Schematic - 50Ω
(Download Bill of Materials from www.rfmd.com.)
R
FOUT
39
µ
H
11
Ω
10 nF
V
CC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
18 nF
RF IN 18 nF
NOTES:
Gain Flatness <0.5 dB
Input and Output Return Loss >20 dB in 75
Ω
system
C1
1nF
J1
RF IN C2
1nF
J2
RF OUT
L1
3.3
µ
H
R1
51
Ω
C3
220 pF
R2
51
Ω
R3
51
Ω
R4
51
Ω
VCC
2317400 Rev -
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
C4
100 nF C5
1
µ
F
R5
51
Ω
RT = 10.2
Ω
50
Ωµ
strip 50
Ωµ
strip
GND
NC
P1-1 VCC
P1
1
2
3
3-18
RF2317
Rev A16 010816
3
LINEAR CATV
AMPLIFIERS
Evaluation Board Schematic - 75Ω
C1
1nF
J1
RF IN C2
1nF
J2
R
FOUT
L1
1000 nH
R4
56
Ω
C3
0.1 uF
R1
56
Ω
R2
56
Ω
R3
56
Ω
2317401 Rev -
75
Ωµ
strip 75
Ωµ
strip
GND
NC
P1-1 VCC
P1
1
2
3
VCC
1
3
2
4
6
5
8
7
16
14
15
13
11
12
9
10
3-19
RF2317
Rev A16 010816
3
LINEAR CATV
AMPLIFIERS
Evaluation Board Layout - 50Ω
2.0” x 2.0”
Board Thickness 0.031”, Board Material FR-4
Evaluation Board Layout - 75Ω
1.40” x 1.40”
Board Thickness 0.062”, Board Material FR-4
3-20
RF2317
Rev A16 010816
3
LINEAR CATV
AMPLIFIERS
Collector Voltage versus Current
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.0 50.0 100.0 150.0 200.0 250.0
Collector Current (mA)
Collector Voltage (Volts)
Vcc
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
75 Ohms, ICC = 150 mA, Temp = 25°C
Swp Max
2GHz
Swp Min
0.005GHz
S[2,2] S[1,1]
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
75 Ohms, ICC = 180 mA, Temp = 25°C
Swp Max
2GHz
Swp Min
0.005GHz
S[2,2] S[1,1]
Gain versus Frequency
14.0
14.2
14.4
14.6
14.8
15.0
15.2
15.4
100.0 200.0 300.0 400.0 500.0
Frequency (MHz)
Gain (dB)
-40 degrees C
+26 degrees C
+85 degrees C
