Silizium-Differential-Fotodiode Silicon Differential Photodiode Lead (Pb) Free Product - RoHS Compliant SFH 221 Wesentliche Merkmale Features * Speziell geeignet fur Anwendungen im Bereich von 400 nm bis 1100 nm * Hohe Fotoempfindlichkeit * Hermetisch dichte Metallbauform (ahnlich TO-5), geeignet bis 125 C1) * Doppeldiode von extrem hoher Gleichmaigkeit * Especially suitable for applications from 400 nm to 1100 nm * High photosensitivity * Hermetically sealed metal package (similar to TO-5), suitable up to 125 C1) * Double diode with extremely high homogeneousness Anwendungen Applications * * * * * * * * Nachlaufsteuerungen Kantenfuhrung Industrieelektronik Messen/Steuern/Regeln" Typ Type Bestellnummer Ordering Code SFH 221 Q62702P0270 1) 1) Eine Abstimmung der Einsatzbedingungen mit dem Hersteller wird empfohlen bei TA > 85 C For operating conditions of TA > 85 C please contact us. 2007-04-03 1 Follow-up controls Edge drives Industrial electronics For control and drive circuits SFH 221 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 125 C Sperrspannung Reverse voltage VR 10 V Isolationsspannung gegen Gehause Insulation voltage vs. package VIS 100 V Verlustleistung, TA = 25 C Total power dissipation Ptot 50 mW Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) fur jede Einzeldiode Characteristics (TA = 25 C, standard light A, T = 2856 K) per single diode Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Fotoempfindlichkeit, VR = 5 V Spectral sensitivity S 24 ( 15) nA/Ix Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max 900 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax 400 ... 1100 nm Bestrahlungsempfindliche Flache Radiant sensitive area A 1.54 mm2 0.7 x 2.2 mm Abmessung der bestrahlungsempfindlichen Flache L x B Dimensions of radiant sensitive area LxW Halbwinkel Half angle 55 Grad deg. Dunkelstrom, VR = 10 V Dark current IR 10 ( 100) nA Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity S 0.55 A/W 2007-04-03 2 SFH 221 Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) fur jede Einzeldiode Characteristics (TA = 25 C, standard light A, T = 2856 K) per single diode (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Maximale Abweichung der Fotoempfindlichkeit vom Mittelwert Max. deviation of the system spectral sensitivity from the average S 5 % Quantenausbeute, = 850 nm Quantum yield 0.80 Electrons Photon Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage VO 330 ( 280) mV Kurzschlustrom, Ev = 1000 Ix Short-circuit current ISC 24 A Isolationsstrom, VIS = 100 V Insulation current IIS 0.1 ( 1) nA Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 1 k; VR = 5 V; = 850 nm; Ip = 25 A tr , tf 500 ns Durchlaspannung, IF = 40 mA, E = 0 Forward voltage VF 1.0 V Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance C0 25 pF Temperaturkoeffizient fur VO Temperature coefficient of VO TCV - 2.6 mV/K Temperaturkoeffizient fur ISC Temperature coefficient of ISC TCI 0.18 %/K Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V, = 850 nm NEP 1.0 x 10-13 Nachweisgrenze, VR = 10 V, = 850 nm Detection limit D* 1.2 x 1012 2007-04-03 3 W -----------Hz cm x Hz -------------------------W SFH 221 Relative Spectral Sensitivity Srel = f () Photocurrent IP = f (Ev), VR = 5 V Open-Circuit-Voltage VL = f (Ev) Total Power Dissipation Ptot = f (TA) Dark Current IR = f (VR), E = 0 Capacitance C = f (VR), f = 1 MHz, E = 0 Dark Current IR = f (TA), VR = 1 V, E = 0 Directional Characteristics Srel = f () 2007-04-03 4 OPTO SEMICONDUCTORS SFH 221 0.8 0.6 Chip position Radiant sensitive area 2.0 (0.079) Anode B o0.45 (0.018) 5( 5( 0.0 0.0 33 ) 26 ) 9) .0 03 1) ( 03 1.0 (0. 8 0. 5.08 (0.200) spacing o9.5 (0.374) o9.0 (0.354) o8.3 (0.327) o8.0 (0.315) o6.0 (0.236) o5.8 (0.228) Mazeichnung Package Outlines 3.4 (0.134) 14.5 (0.571) 3.0 (0.118) 12.5 (0.492) Anode A Metal case Isolated cathode 0.3 (0.012) max 0.09 (0.004) Diode system Radiant sensitive area 2.0 (0.079) x 1.67 (0.066) each Approx. weight 1.5 g GMOY6639 Mae in mm (inch) / Dimensions in mm (inch). 2007-04-03 5 SFH 221 Lotbedingungen Soldering Conditions Wellenloten (TTW) TTW Soldering (nach CECC 00802) (acc. to CECC 00802) OHLY0598 300 C T 10 s 250 Normalkurve standard curve 235 C ... 260 C Grenzkurven limit curves 2. Welle 2. wave 200 1. Welle 1. wave 150 ca 200 K/s 2 K/s 5 K/s 100 C ... 130 C 100 2 K/s 50 Zwangskuhlung forced cooling 0 0 50 100 150 200 s 250 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-04-03 6