SiC MOSFET LSIC1MO120E0160, 1200 V, 160 mOhm, TO-247-3L LSIC1MO120E0160 1200 V N-channel, Enhancement-mode SiC MOSFET RoHS Product Summary Circuit Diagram TO-247-3L Characteristics Value VDS 1200 V Typical RDS(ON) 160 m ID ( TC 100 C) 14 A Features * O ptimized for highfrequency, high-efficiency applications * E xtremely low gate charge and output capacitance * 1 2 Unit * Body diode * N ormally-off operation at all temperatures * Ultra-low on-resistance * H alogen-free, RoHS compliant and lead-free * L ow gate resistance for high-frequency switching 3 Environmental Applications * Littelfuse "RoHS" logo = RoHS RoHS conform * Littelfuse "HF" logo = Halogen Free * Littelfuse "Pb-free" logo = Pb-free lead plating Pb * H igh-frequency applications * Solar Inverters * S witch Mode Power Supplies * Motor Drives * H igh Voltage DC/DC Converters * Battery Chargers * Induction Heating * UPS (c)2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/05/19 Pb SiC MOSFET LSIC1MO120E0160, 1200 V, 160 mOhm, TO-247-3L Maximum Ratings Characteristics Symbol Conditions Value VGS = 20 V, TC = 25 C 22 VGS = 20 V, TC = 100 C 14 ID(pulse) TC = 25 C 44 Power Dissipation PD TC = 25 C, TJ = 150 C Operating Junction Temperature TJ Continuous Drain Current ID Pulsed Drain Current 1 Unit A A 125 W -55 to 150 C VGS,MAX Absolute maximum values -6 to 22 VGS,OP,TR Transient, <1% duty cycle -10 to 25 VGS,OP Recommended DC operating values -5 to 20 Storage Temperature TSTG - -55 to 150 Lead Temperature for Soldering Tsold - 260 C 0.6 Nm 5.3 in-lb Gate-source Voltage Mounting Torque MD M3 or 6-32 screw V C Footnote 1: Pulse width limited by TJ,max Thermal Characteristics Symbol Value Unit Maximum Thermal Resistance, junction-to-case Characteristics Rth,JC,max 1.0 C/W Maximum Thermal Resistance, junction-to-ambient Rth,JA,max 40 C/W Electrical Characteristics (TJ = 25 C unless otherwise specified) Characteristics Symbol Conditions Min Typ Max Unit Drain-source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 A 1200 - - V Zero Gate Voltage Drain Current IDSS Static Characteristics Gate Leakage Current VDS = 1200 V, VGS = 0 V - 1 100 VDS = 1200 V, VGS = 0 V, TJ = 150 C - 2 - IGSS,F VGS = 22 V, VDS = 0 V - - 100 IGSS,R VGS = -6 V, VDS = 0 V - - 100 ID = 10 A, VGS = 20 V - 160 200 ID = 10 A, VGS = 20 V, TJ = 150 C - 210 - VDS = VGS, ID = 5 mA 1.8 2.8 4.0 VDS = VGS, ID = 5 mA, TJ = 150 C - 1.9 - Resonance method, Drain-Source shorted - 0.95 - Drain-source On-state Resistance RDS(ON) Gate Threshold Voltage VGS,(th) Gate Resistance RG A nA m V (c)2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/05/19 SiC MOSFET LSIC1MO120E0160, 1200 V, 160 mOhm, TO-247-3L Electrical Characteristics (TJ = 25 C unless otherwise specified) Characteristics Symbol Conditions Value Min Typ Max - 77 - - 59 - - 136 - - 870 - - 45 - - 7 - - 14 - - 57 - - 14 - Unit Dynamic Characteristics Turn-on Switching Energy EON Turn-off Switching Energy EOFF Total Per-cycle Switching Energy ETS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS COSS Stored Energy EOSS Total Gate Charge Qg VDD = 800 V, ID = 10 A, VGS = -5/+20 V, RG,ext = 5 , L = 1.4mH, FWD=LSIC2SD120A05 VDD = 800 V, VGS = 0 V, f = 1 MHz, VAC = 25 mV VDD = 800 V, ID = 10 A, VGS = -5/+20 V Gate-source Charge Qgs Gate-drain Charge Qgd - 20 - td(on) - 12 - - 8 - - 19 - - 14 - Turn-on Delay Time Rise Time tr Turn-off Delay Time Fall Time td(off) VDD = 800 V, VGS = -5/+20 V, ID = 10 A, RG,ext = 5 , RL = 80 , Timing relative to VDS tf J pF J nC ns Reverse Diode Characteristics Characteristics Diode Forward Voltage Continuous Diode Forward Current Peak Diode Forward Current 1 Symbol VSD IS ISP Conditions Value Min Typ Max IS = 5 A, VGS = 0 V - 3.8 - IS = 5 A, VGS = 0 V, TJ = 150 C - 3.4 - VGS = 0 V, TC = 25 C - - 24 - - 44 Unit V A Footnote 1: Pulse width limited by TJ,max (c)2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/05/19 SiC MOSFET LSIC1MO120E0160, 1200 V, 160 mOhm, TO-247-3L Figure 1: M aximum Power Dissipation ( TJ = 150 C ) Figure 2: Transfer Characteristics ( VDS = 10 V ) 50 45 120 Drain Current, ID (A) Maximum Power Dissipation (W) 140 100 80 60 40 40 35 150C 30 25 -55C 20 25C 15 10 20 5 0 -7 5 -2 5 25 75 125 0 175 0 5 Case Temperature, TC (C) 15 20 Gate-Source Voltage, VGS (V) Figure 3: O utput Characteristics ( TJ = 25 C ) Figure 4: Output Characteristics ( TJ = 150 C ) 40 40 (Pulse Width < 400s) 20V (Pulse Width < 400 s) 18V 30 Drain Current, ID (A) Drain Current, ID (A) 10 16V 20 14V 12V 10 20V 18V 30 16V 14V 20 12V 10V 10 10V 0 0 2 4 6 8 0 10 0 2 Drain-Source Voltage, VDS (V) 6 8 10 Drain-Source Voltage, VDS (V) Figure 5: Output Characteristics (TJ = -55 C) Figure 6: Reverse Conduction Characteristics (TJ = 25 C) 40 Reverse Voltage, VSD (V) (Pulse Width < 400 s) 8 6 4 2 0 0 20V 30 -5V 18V 20 0V 5V 10V 15V 20V 10 16V 20 10 14V 12V 30 10V 0 0 2 4 6 8 Drain-Source Voltage, VDS (V) 10 Reverse Current, IS (A) Drain Current, ID (A) 4 (Pulse Width < 400 s) 40 (c)2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/05/19 SiC MOSFET LSIC1MO120E0160, 1200 V, 160 mOhm, TO-247-3L Figure 7: Reverse Conduction Characteristics (TJ = 150 C) Figure 8: Reverse Conduction Characteristics (TJ = -55 C) Reverse Voltage, VSD (V) Reverse Voltage, VSD (V) 8 6 4 2 0 8 0 0 20 30 5V 10V 20V 10 15V 20 30 (Pulse Width < 400 s) Reverse Current, IS (A) 15V 10V 2 0V -5V Reverse Current, IS (A) -5V 0V 5V 4 0 10 20V 6 (Pulse Width < 400s) 40 40 Figure 9: Transient Thermal Impedance Figure 10: Safe Operating Area (TC = 25 C) 100 Transient Thermal Impedance, Zth,JC (Normalized to Rth,JC) 100 Drain Current, ID (A) 0.5 0.3 0.1 10-1 0.05 0.02 0.01 10-2 Single Pulse 10 10s 100s 1 1ms DC 0.1 10-3 Single Pulse 0.01 10 -6 10 10 -5 -4 10 -3 10 10 -2 -1 10 0.1 0 1 Pulse Width (s) 100 1000 Drain-Source Voltage, VDS (V) Figure 11: On-resistance vs. Drain Current Figure 12: Normalized On-resistance 1.6 Normalized On-resistance, RDS(ON) 2.5 Normalized On-resistance, RDS(ON) 10 2 150C -55C 1.5 25C 1 0.5 1.4 1.2 1 0.8 0.6 0.4 0.2 (VGS = 20V, ID = 10A) 0 0 0 10 20 Drain Current, ID (A) 30 40 -75 -50 -25 0 25 50 75 100 125 150 175 Junction Temperature, TJ(C) (c)2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/05/19 SiC MOSFET LSIC1MO120E0160, 1200 V, 160 mOhm, TO-247-3L Figure 13: Threshold Voltage Figure 14: Drain-Source Blocking Voltage Normalized Blocking Voltage, V(BR)DSS (V) Threshold Voltage, VGS(TH) (V) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 (ID = 5mA) 0.0 -75 -50 -25 0 25 50 75 100 125 150 1.04 1.03 1.02 1.01 1 0.99 0.98 0.97 (ID = 250A) 0.96 175 -75 -50 Junction Temperature, TJ (C) 0 50 75 100 125 150 175 Figure 16: Junction Capacitances 10000 10000 1000 Capacitance (pF) CISS 100 COSS 10 CRSS 1000 CISS 100 COSS 10 CRSS (f = 1MHz) (f = 1MHz) 1 1 0 200 400 600 800 0 1000 50 100 150 200 Drain Voltage, VDS (V) Drain Voltage, VDS (V) Figure 17: COSS Stored Energy EOSS Figure 18: Gate Charge 25 20 Gate-Source Voltage, VGS (V) Stored Energy, EOSS (J) 25 Junction Temperature, TJ (C) Figure 15: Junction Capacitances Capacitance (pF) -25 20 15 10 5 15 10 5 0 (VDD = 800V, ID = 14A) 0 0 200 400 600 800 Drain Voltage, VDS (V) 1000 -5 0 10 20 30 40 50 60 70 80 90 Gate Charge, Qg (nC) (c)2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/05/19 SiC MOSFET LSIC1MO120E0160, 1200 V, 160 mOhm, TO-247-3L Figure 19: Switching Energy vs. Drain Current Figure 20: Switching Energy vs. Gate Resistance 400 400 300 250 EON 200 150 EOFF 100 VDD = 800V ID = 10A VGS = -5/+V FWD = LSIC2SD120A05 L = 1.4mH TJ = 25C 350 Switching Energy (J) Switching Energy, (J) ETS VDD = 800V RG,ext - 5 VGS = -5/+20V FWD = LSIC2SD120A05 L = 1.4mH TJ = 25C 350 300 250 ETS EON 200 150 EOFF 100 50 50 0 0 5 10 15 20 0 25 0 Drain Current, ID (A) 5 10 15 20 25 30 External Gate Resistance, RG,ext () Package Dimensions TO-247-3L A E1 P OP 1 D E2 O D1 S Q A2 D2 E E2/2 L1 OPTIONAL L b2 (2x) e e A1 c b (3x) b4 2.46 Notes: 1. Dimensions are in millimeters 2. Dimension D, E do not include Recommended Hole Pattern Layout mold flash. Mold flash shall not exceed 0.127 mm per side measured at 3 outer most extreme of plastic body. .9 R0 3.oP to have a maximum draft angle of 38.1 mm to the top of the part with a maximum hole diameter of 3.912 mm. 5.44 5.44 UNIT: mm Symbol Millimeters Min Nom Max A 4.80 5.03 5.20 A1 2.25 2.38 2.54 A2 1.85 1.98 2.11 b 0.99 - 1.40 b2 1.65 - 2.39 b4 2.59 - 3.43 c 0.38 0.64 0.89 D 20.80 20.96 21.34 D1 13.50 - - D2 0.51 1.19 1.35 e 5.44 BSC E 15.75 15.90 16.13 E1 13.06 14.02 14.15 E2 4.19 4.32 4.83 L 19.81 20.19 20.57 L1 3.81 4.19 4.45 oP 3.55 3.61 3.66 oP1 7.06 7.19 7.32 Q 5.49 5.61 6.20 S 6.05 6.17 6.30 (c)2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/05/19 SiC MOSFET LSIC1MO120E0160, 1200 V, 160 mOhm, TO-247-3L Packing Options Part Numbering and Marking System SIC1MO120E0160 LF YYWWE ZZZZZZ-ZZ SIC = SiC = Gen1 1 MO = MOSFET = Voltage Rating (1200 V) 120 E = TO-247-3L 0160 = RDS(ON) (160 mOhm) = Year YY WW = Week = Special Code E ZZZZZZ-ZZ = Lot Number Part Number Marking LSIC1MO120E0160 SIC1MO120E0160 Packing Mode M.O.Q Tube (30pcs) 450 20.955~21.045 (532.257~534.543) 0.9010 (22.885) 0.52100.040 (2X) (13.23301.016) (2X) O 0.118~0.120 (2X) O(2.997~3.048)(2X) O0.3150.002 (2X) O(8.0010.051)(2X) 0.2440.02 (6.1980.508) 1. All pin plug holes are considered critical dimension 2. Tolerance is to be 0.010 unless otherwise specified 3. Dimension are in inch (and millimeters). 0.9050.02 (22.9870.508) NOTE: 0.0300.004 (0.7620.102) 0.1180.008 (2.9970.203) 0.8460.02 (21.4880.508) 0.9010 (22.885) 0.51200.040 (13.0051.016) Packing Specification TO-247-3L 0.0630.008 (1.6000.203) Disclaimer Notice - Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. (c)2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/05/19