©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/05/19
SiC MOSFET
LSIC1MO120E0160, 1200 V, 160 mOhm, TO-247-3L
RoHS
LSIC1MO120E0160 1200 V N-channel, Enhancement-mode SiC MOSFET
Features
Applications
• Optimized for high-
frequency, high-efficiency
applications
• Extremely low gate
charge and output
capacitance
• Low gate resistance for
high-frequency switching
• Normally-off operation at
all temperatures
• Ultra-low on-resistance
• Halogen-free, RoHS
compliant and lead-free
• High-frequency
applications
• Solar Inverters
• Switch Mode Power
Supplies
• UPS
• Motor Drives
• High Voltage DC/DC
Converters
• Battery Chargers
• Induction Heating
Circuit Diagram TO-247-3L
21 3
*
* Body
diode
Product Summary
Characteristics Value Unit
VDS 1200 V
Typical RDS(ON) 160 mΩ
ID ( TC ≤ 100 °C) 14 A
• Littelfuse “RoHS” logo =
RoHS conform
• Littelfuse “HF” logo =
Halogen Free
• Littelfuse “Pb-free” logo
= Pb-free lead plating
Environmental
RoHS
Pb
Pb
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/05/19
SiC MOSFET
LSIC1MO120E0160, 1200 V, 160 mOhm, TO-247-3L
Thermal Characteristics
Maximum Ratings
Characteristics Symbol Conditions Value Unit
Continuous Drain Current ID
VGS = 20 V, TC = 25 °C 22 A
VGS = 20 V, TC = 100 °C 14
Pulsed Drain Current 1 ID(pulse) TC = 25 °C 44 A
Power Dissipation PDTC = 25 °C, TJ = 150 °C 125 W
Operating Junction Temperature TJ-55 to 150 °C
Gate-source Voltage
VGS,MAX Absolute maximum values -6 to 22
V
VGS,OP,TR Transient, <1% duty cycle -10 to 25
VGS,OP
Recommended DC
operating values -5 to 20
Storage Temperature TSTG --55 to 150 °C
Lead Temperature for Soldering Tsold -260 °C
Mounting Torque MDM3 or 6-32 screw 0.6 Nm
5.3 in-lb
Footnote 1: Pulse width limited by TJ,max
Characteristics Symbol Value Unit
Maximum Thermal Resistance, junction-to-case Rth,JC,max 1.0 °C/W
Maximum Thermal Resistance, junction-to-ambient Rth,JA,max 40 °C/W
Electrical Characteristics (TJ = 25 °C unless otherwise specified)
Characteristics Symbol Conditions Min Ty p Max Unit
Static Characteristics
Drain-source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 μA 1200 - - V
Zero Gate Voltage Drain Current IDSS
VDS = 1200 V, VGS = 0 V - 1 100 μA
VDS = 1200 V, VGS = 0 V, TJ = 150 °C - 2 -
Gate Leakage Current IGSS,F VGS = 22 V, VDS = 0 V - - 100 nA
IGSS,R VGS = -6 V, VDS = 0 V - - 100
Drain-source On-state Resistance RDS(ON)
ID = 10 A, VGS = 20 V -160 200 mΩ
ID = 10 A, VGS = 20 V, TJ = 150 °C -210 -
Gate Threshold Voltage VGS,(th)
VDS = VGS, ID = 5 mA 1.8 2.8 4.0 V
VDS = VGS, ID = 5 mA, TJ = 150 °C -1.9 -
Gate Resistance RG
Resonance method, Drain-Source
shorted - 0.95 - Ω
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/05/19
SiC MOSFET
LSIC1MO120E0160, 1200 V, 160 mOhm, TO-247-3L
Electrical Characteristics (TJ = 25 °C unless otherwise specified)
Characteristics Symbol Conditions Value Unit
Min Ty p Max
Dynamic Characteristics
Turn-on Switching Energy EON VDD = 800 V, ID = 10 A,
VGS = -5/+20 V, RG,ext = 5 Ω,
L = 1.4mH, FWD=LSIC2SD120A05
- 77 -
μJTurn-off Switching Energy EOFF - 59 -
Total Per-cycle Switching Energy ETS -136 -
Input Capacitance CISS
VDD = 800 V, VGS = 0 V,
f = 1 MHz, VAC = 25 mV
- 870 -
pFOutput Capacitance COSS - 45 -
Reverse Transfer Capacitance CRSS - 7 -
COSS Stored Energy EOSS -14 - μJ
Total Gate Charge Qg
VDD = 800 V, ID = 10 A,
VGS = -5/+20 V
- 57 -
nCGate-source Charge Qgs -14 -
Gate-drain Charge Qgd - 20 -
Turn-on Delay Time td(on)
VDD = 800 V, VGS = -5/+20 V,
ID = 10 A, RG,ext = 5 Ω, RL = 80 Ω,
Timing relative to VDS
-12 -
ns
Rise Time tr- 8 -
Turn-off Delay Time td(off) -19 -
Fall Time tf-14 -
Reverse Diode Characteristics
Characteristics Symbol Conditions Value Unit
Min Ty p Max
Diode Forward Voltage VSD
IS = 5 A, VGS = 0 V - 3.8 - V
IS = 5 A, VGS = 0 V, TJ = 150 °C - 3.4 -
Continuous Diode Forward Current ISVGS = 0 V, TC = 25 °C - - 24 A
Peak Diode Forward Current 1ISP - - 44
Footnote 1: Pulse width limited by TJ,max
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/05/19
SiC MOSFET
LSIC1MO120E0160, 1200 V, 160 mOhm, TO-247-3L
0
20
40
60
80
100
120
140
-
75 -25 25 75 125175
Case Temperature, TC (ºC)
Maximum Power Dissipation (W)
Figure 2: Transfer Characteristics ( VDS = 10 V )
Figure 3: Output Characteristics ( TJ = 25 °C )
Figure 1: Maximum Power Dissipation ( TJ = 150 °C )
Figure 4: Output Characteristics ( TJ = 150 °C )
Figure 6: Reverse Conduction Characteristics (T
J
= 25 °C)
Figure 5: Output Characteristics (TJ = -55 °C)
0
5
10
15
20
25
30
35
40
45
50
0510 15 20
150ºC
25ºC
-55ºC
Gate-Source Voltage, VGS (V)
Drain Current, ID (A)
0
10
20
30
40
0246810
(Pulse Width < 400μs)20V
18V
16V
14V
12V
10V
Drain-Source Voltage, VDS (V)
Drain Current, ID (A)
0
10
20
30
40
0246810
(Pulse Width < 400 μs)
20V
18V
16V
14V
12V
10V
Drain-Source Voltage, VDS (V)
Drain Current, ID (A)
0
10
20
30
40
0246810
(Pulse Width < 400 μs)
20V
18V
16V
14V
12V
10V
Drain-Source Voltage, VDS (V)
Drain Current, ID (A)
0
10
20
30
40
02468
(Pulse Width < 400 μs)
-5V
0V 5V 10V
15V 20V
Reverse Voltage, V
SD
(V)
Reverse Current, I
S
(A)
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/05/19
SiC MOSFET
LSIC1MO120E0160, 1200 V, 160 mOhm, TO-247-3L
Figure 7: Reverse Conduction Characteristics (T
J
= 150 °C)
Figure 8: Reverse Conduction Characteristics (TJ = -55 °C)
Figure 9: Transient Thermal Impedance Figure 10: Safe Operating Area (TC = 25 °C)
Figure 11: On-resistance vs. Drain Current Figure 12: Normalized On-resistance
0
10
20
30
40
02468
(Pulse Width < 400 μs)
-5V 0V 5V
10V
15V
20V
Reverse Voltage, V
SD
(V)
Reverse Current, I
S
(A)
0
10
20
30
40
02468
-5V 0V 5V 10V
20V
15V
(Pulse Width < 400µs)
Reverse Current, IS (A)
Reverse Voltage, VSD (V)
Pulse Width (s)
0.5
0.3
0.1
0.05
0.02
0.01
Single Pulse
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
0
10
-1
10
-2
10
-3
Transient Thermal Impedance, Zth,JC
(Normalized to Rth,JC)
10μs
100μs
1ms
DC
Single Pulse
0.01
0.1
1
10
100
0.1110 100 1000
Drain-Source Voltage, V
DS
(V)
Drain Current, I
D
(A)
0
0.5
1
1.5
2
2.5
010203040
150ºC
-55ºC
25ºC
Drain Current, ID (A)
Normalized On-resistance, RDS(ON)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-75 -50 -25 0255075 100 125 150 175
(V
GS
= 20V, I
D
= 10A)
Junction Te mperature, T
J
(ºC)
Normalized On-resistance, R
DS(ON)
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/05/19
SiC MOSFET
LSIC1MO120E0160, 1200 V, 160 mOhm, TO-247-3L
Figure 13: Threshold Voltage Figure 14: Drain-Source Blocking Voltage
Figure 15: Junction Capacitances Figure 16: Junction Capacitances
Figure 17: COSS Stored Energy EOSS Figure 18: Gate Charge
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-75 -50 -25 0255075 100 125 150 175
(ID = 5mA)
Junction Te mperature, T
J
(ºC)
Threshold Voltage, V
GS(TH)
(V)
0.96
0.97
0.98
0.99
1
1.01
1.02
1.03
1.04
-75 -50 -25 0255075 100 125 150 175
Junction Te mperature, T
J
(ºC)
Normalized Blocking Voltage, V
(BR)DSS
(V)
(ID = 250µA)
1
10
100
1000
10000
0200 400600 8001000
C
ISS
C
OSS
C
RSS
(f = 1MHz)
Drain Voltage, V
DS
(V)
Capacitance (pF)
1
10
100
1000
10000
050 100 150 200
C
ISS
C
OSS
C
RSS
(f = 1MHz)
Drain Voltage, V
DS
(V)
Capacitance (pF)
0
5
10
15
20
25
0200 400600 8001000
Drain Voltage, V
DS
(V)
Stored Energy, E
OSS
(µJ)
-5
0
5
10
15
20
0102030405060708090
(VDD = 800V, ID = 14A)
Gate Charge, Q
g
(nC)
Gate-Source Voltage, V
GS
(V)
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/05/19
SiC MOSFET
LSIC1MO120E0160, 1200 V, 160 mOhm, TO-247-3L
Figure 19: Switching Energy vs. Drain Current
Package Dimensions TO-247-3L
R0.93
5.44 5.44
2.46
Recommended Hole Pattern Layout
UNIT: mm
E
E1
A
A2
D2D1
ØP
ØP1
E2/2
E2
Q
S
c
A1
DL
L1
b2 (2x)
eb4
b (3x)
e
OPTIONA
L
Symbol Millimeters
Min Nom Max
A 4.80 5.03 5.20
A1 2.25 2.38 2.54
A2 1.85 1.98 2.11
b 0.99 - 1.40
b2 1.65 - 2.39
b4 2.59 - 3.43
c 0.38 0.64 0.89
D 20.80 20.96 21.34
D1 13.50 - -
D2 0.51 1. 19 1.35
e 5.44 BSC
E 15.75 15.90 16.13
E1 13.06 14.02 14.15
E2 4.19 4.32 4.83
L 19.81 20.19 20.57
L1 3.81 4.19 4.45
øP 3.55 3.61 3.66
øP1 7.06 7. 1 9 7.32
Q 5.49 5.61 6.20
S 6.05 6.17 6.30
Notes:
1. Dimensions are in millimeters
2. Dimension D, E do not include
mold flash. Mold flash shall not ex-
ceed 0.127 mm per side measured at
outer most extreme of plastic body.
3.øP to have a maximum draft angle
of 38.1 mm to the top of the part
with a maximum hole diameter of
3.912 mm.
Figure 20: Switching Energy vs. Gate Resistance
0
50
100
150
200
250
300
350
400
0510 15 20 25
E
TS
E
ON
E
OFF
V
DD
= 800V
R
G,ext
- 5Ω
V
GS
= -5/+20V
FWD = LSIC2SD120A05
L = 1.4mH
T
J
= 25ºC
Drain Current, I
D
(A)
Switching Energy, (µJ)
0
50
100
150
200
250
300
350
400
0510 15 20 25 30
E
TS
E
ON
E
OFF
V
DD
= 800V
I
D
= 10A
V
GS
= -5/+V
FWD = LSIC2SD120A05
L = 1.4mH
T
J
= 25ºC
External Gate Resistance, R
G,ext
(Ω)
Switching Energy (µJ)
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/05/19
SiC MOSFET
LSIC1MO120E0160, 1200 V, 160 mOhm, TO-247-3L
Packing Options
Part Number Marking Packing Mode M.O.Q
LSIC1MO120E0160 SIC1MO120E0160 Tube (30pcs) 450
Part Numbering and Marking System
SIC
1
MO
E = TO-247-3L
YY
WW
E
ZZZZZZ-ZZ
120
0160
SIC1MO120E0160
YYWWE
ZZZZZZ-ZZ
L
F
= SiC
= MOSFET
= Voltage Rating (1200 V)
= Gen1
= R
DS(ON)
(160 mOhm)
= Week
= Special Code
= Lot Number
= Year
Packing Specification TO-247-3L
(6.198±0.508)
0.9010 0.118~0.120 (2X)
(13.233±01.016) (2X)
Ø0.315±0.002 (2X)
0.118±0.008
(22.987±0.508)
0.846±0.02
0.030±0.004
0.063±0.008
(13.005±1.016)
20.955~21.045
NOTE:
1. All pin plug holes are considered critical dimension
2. Tolerance is to be ±0.010 unless otherwise specified
3. Dimension are in inch (and millimeters).
Ø
(22.885)
(532.257~534.543) 0.9010
(22.885)
(2.997~3.048)(2X)
(8.001±0.051)(2X)
Ø
Ø
0.5210±0.040 (2X)
0.244±0.02
(2.997±0.203)
0.905±0.02
(21.488±0.508)
(1.600±0.203)
(0.762±0.102)
0.5120±0.040
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life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may
result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed
void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used
in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions
of Sale, unless otherwise agreed by Littelfuse. Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each
product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer
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