Datasheet.Directory

{"V(RWM) (V) Work.Pk.Rev.Voltage":"17.8","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"31.9","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"24.2","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"22","V(BR) Min.(V)Breakdown Voltage":"19.8","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"47","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"175","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"344","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"242","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"220","V(BR) Min.(V)Breakdown Voltage":"198","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"4.3","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"185","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"328","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"231","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"220","V(BR) Min.(V)Breakdown Voltage":"209","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"4.6","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"175","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"344","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"242","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"220","V(BR) Min.(V)Breakdown Voltage":"198","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"4.3","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"185","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"328","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"231","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"220","V(BR) Min.(V)Breakdown Voltage":"209","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"4.6","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"18.8","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"30.6","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"23.1","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"22","V(BR) Min.(V)Breakdown Voltage":"20.9","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"49","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"17.8","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"31.9","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"24.2","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"22","V(BR) Min.(V)Breakdown Voltage":"19.8","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"47","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"18.8","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"30.6","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"23.1","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"22","V(BR) Min.(V)Breakdown Voltage":"20.9","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"49","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"Category":"Circuit Protection","Voltage - Reverse Standoff (Typ)":"185V","Voltage - Clamping (Max) @ Ipp":"328V","Mounting Type":"Through Hole","Family":"TVS - Diodes","Bidirectional Channels":"-","Series":"-","Package / Case":"DO-201AA, DO-27, Axial","Operating Temperature":"-55\u00b0C ~ 150\u00b0C (TJ)","Voltage - Breakdown (Min)":"209V","Power Line Protection":"No","Packaging":"Tape & Box (TB)","Applications":"General Purpose","Datasheets":"1.5KE-G Series","Capacitance @ Frequency":"-","Supplier Device...

{"Category":"Circuit Protection","Voltage - Clamping (Max) @ Ipp":"328V","Operating Temperature":"-55\u00b0C ~ 150\u00b0C (TJ)","Voltage - Breakdown (Min)":"209V","Package / Case":"DO-201AA, DO-27, Axial","Type":"Zener","Product Training Modules":"ESD and ESD Suppressors","Applications":"General Purpose","Datasheets":"1.5KE-G Series","Standard Package":"1,000","Voltage - Reverse Standoff (Typ)":"185V","Unidirectional Channels":"-","Bidirectional Channels":"1","Current - Peak Pulse (10/1000\u00b5s)":"4.57A",...

{"Category":"Circuit Protection","Voltage - Clamping (Max) @ Ipp":"30.6V","Operating Temperature":"-55\u00b0C ~ 150\u00b0C (TJ)","Voltage - Breakdown (Min)":"20.9V","Package / Case":"DO-201AA, DO-27, Axial","Type":"Zener","Product Training Modules":"ESD and ESD Suppressors","Applications":"General Purpose","Datasheets":"1.5KE-G Series","Standard Package":"1,000","Voltage - Reverse Standoff (Typ)":"18.8V","Unidirectional Channels":"-","Bidirectional Channels":"1","Current - Peak Pulse (10/1000\u00b5s)":"49.0...

{"Category":"Circuit Protection","Voltage - Clamping (Max) @ Ipp":"30.6V","Operating Temperature":"-55\u00b0C ~ 150\u00b0C (TJ)","Voltage - Breakdown (Min)":"20.9V","Package / Case":"DO-201AA, DO-27, Axial","Type":"Zener","Product Training Modules":"ESD and ESD Suppressors","Applications":"General Purpose","Datasheets":"1.5KE-HF Series","Standard Package":"1,000","Voltage - Reverse Standoff (Typ)":"18.8V","Unidirectional Channels":"-","Bidirectional Channels":"1","Current - Peak Pulse (10/1000\u00b5s)":"49....