Datasheet.Directory

{"V(RWM) (V) Work.Pk.Rev.Voltage":"8.1","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"15","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"11","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"10","V(BR) Min.(V)Breakdown Voltage":"9.0","I(RM) Max.(A) Reverse Current":"10u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"100","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"81","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"144","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"110","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"100","V(BR) Min.(V)Breakdown Voltage":"90","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"10.4","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"85.5","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"137","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"105","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"100","V(BR) Min.(V)Breakdown Voltage":"95","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"11","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"81","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"144","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"110","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"100","V(BR) Min.(V)Breakdown Voltage":"90","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"10.4","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"85.5","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"137","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"105","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"100","V(BR) Min.(V)Breakdown Voltage":"95","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"11","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"8.55","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"14.5","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"10.5","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"10","V(BR) Min.(V)Breakdown Voltage":"9.5","I(RM) Max.(A) Reverse Current":"10u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"103","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"8.1","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"15","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"11","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"10","V(BR) Min.(V)Breakdown Voltage":"9.0","I(RM) Max.(A) Reverse Current":"10u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"100","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"8.55","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"14.5","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"10.5","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"10","V(BR) Min.(V)Breakdown Voltage":"9.5","I(RM) Max.(A) Reverse Current":"10u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"103","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"Category":"Circuit Protection","Voltage - Clamping (Max) @ Ipp":"137V","Operating Temperature":"-55\u00b0C ~ 150\u00b0C (TJ)","Voltage - Breakdown (Min)":"95V","Package / Case":"DO-201AA, DO-27, Axial","Type":"Zener","Product Training Modules":"ESD and ESD Suppressors","Applications":"General Purpose","Datasheets":"1.5KE-G Series","Standard Package":"1,000","Voltage - Reverse Standoff (Typ)":"85.5V","Unidirectional Channels":"1","Bidirectional Channels":"-","Current - Peak Pulse (10/1000\u00b5s)":"10.95A"...

{"Category":"Circuit Protection","Voltage - Clamping (Max) @ Ipp":"14.5V","Operating Temperature":"-55\u00b0C ~ 150\u00b0C (TJ)","Voltage - Breakdown (Min)":"9.5V","Package / Case":"DO-201AA, DO-27, Axial","Type":"Zener","Product Training Modules":"ESD and ESD Suppressors","Applications":"General Purpose","Datasheets":"1.5KE-HF Series","Standard Package":"1,000","Voltage - Reverse Standoff (Typ)":"8.6V","Unidirectional Channels":"-","Bidirectional Channels":"1","Current - Peak Pulse (10/1000\u00b5s)":"103.4...

{"Status":"ACTIVE","Polarity":"UNIDIRECTIONAL","Terminal Finish":"MATTE TIN","Package Body Material":"UNSPECIFIED","Non-rep Peak Rev Power Dis-Max":"1500 W","Breakdown Voltage-Min":"90 V","Terminal Form":"WIRE","Package Style":"LONG FORM","Breakdown Voltage-Max":"110 V","Diode Element Material":"SILICON","Case Connection":"ISOLATED","EU RoHS Compliant":"Yes","Terminal Position":"AXIAL","Diode Type":"TRANS VOLTAGE SUPPRESSOR DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Technology":"AVALANCHE","Nu...

{"Polarity":"UNIDIRECTIONAL","Terminal Finish":"MATTE TIN","Breakdown Voltage-Min":"95 V","Terminal Form":"WIRE","Breakdown Voltage-Max":"105 V","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Non-rep Peak Rev Power Dis-Max":"1500 W","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Stand-off Voltage":"85.5 V","Power Dissipation Limit-Max":"5 W","Surface Mount":"Yes","Case Connection":"ISOLATED","Mfr Package Description":"PLASTIC PACKAGE-2","Number of Terminals":"2","Ter...