© 2002 IXYS All rights reserved 1 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
VBE 100-06NO7
241
B3
Single Phase Rectifier Bridge
with Fast Recovery Epitaxial Diodes (FRED)
in ECO-PAC 2
IdAV = 100 A
VRRM = 600 V
trr = 35 ns
VRSM VRRM Typ
V V
600 600 VBE 100-06NO7
Symbol Conditions Maximum Ratings
IdAV ①TC = 85°C, module 100 A
IdAVM 100 A
IFSM TVJ = 45°C t = 10 ms (50 Hz), sine 600 A
VR = 0 t = 8.3 ms (60 Hz), sine 640 A
TVJ = TVJM t = 10 ms (50 Hz), sine 520 A
VR = 0 t = 8.3 ms (60 Hz), sine 555 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 1800 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 1720 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 1350 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 1295 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 3000 V~
IISOL ≤ 1 mA t = 1 s 3600 V~
MdMounting torque (M4) 1.5-2/14-18 Nm/lb.in.
Weight typ. 24 g
Features
• Package with DCB ceramic
base plate in low profile
• Isolation voltage 3000 V~
• Planar passivated chips
• Low forward voltage drop
• Leads suitable for PC board soldering
Applications
• Supplies for DC power equipment
• Input and output rectifiers for high
frequency
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Space and weight savings
• Improved temperature and power
cycling capability
• Small and light weight
• Low noise switching
Data according to IEC 60747 refer to a single diode unless otherwise stated
①for resistive load at bridge output.
Dimensions in mm (1 mm = 0.0394")
Symbol Conditions Characteristic Values
typ. max.
IRVR = VRRM TVJ = 25°C 0.1 mA
VR = VRRM TVJ = TVJM 2.5 mA
VFIF = 60 A TVJ = 25°C 2.04 V
VT0 for power-loss calculations only 1.09 V
rT4.3 mΩ
RthJC per diode; DC current 0.8 K/W
RthCH per diode, DC current, typ. 0.2 K/W
IRM IF = 130 A, -diF/dt = 100 A/µs 6.8 A
VR = 100 V, TVJ = 100°C
trr IF = 1 A; -di/dt = 300 A/µs; VR = 30 V, TVJ = 25°C 35 ns
aMax. allowable acceleration 50 m/s2
dScreeping distance on surface (pin to heatsisnk) 11.2 mm
dAstrike distance in air (pin to heatsisnk) 9.7 mm
Preliminary data sheet
PS16
EG 1
~ L 9
~ K10
Pin arangement see outlines
© 2002 IXYS All rights reserved 2 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
VBE 100-06NO7
241
B3
Fig. 3 Peak reverse current IRM
versus -diF/dt
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
Fig. 1 Forward current IF versus VF
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
200 600 10000 400 800
80
90
100
110
120
130
140
0.00001 0.0001 0.001 0.01 0.1 1
0.0001
0.001
0.01
0.1
1
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
Kf
TVJ
C-diF/dt
ts
K/W
0 200 400 600 800 1000
0
5
10
15
20
0.0
0.4
0.8
1.2
1.6
VFR
diF/dt
V
200 600 10000 400 800
0
20
40
60
80
100 1000
0
1000
2000
3000
4000
012
0
20
40
60
80
100
120
140
160
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/µs
A
V
nC
A/µsA/µs
trr
ns
tfr
A/µs
µs
ZthJC
DWLP55-06 DWLP55-06 DWLP55-06
DWLP55-06 DWLP55-06 DWLP55-06
TVJ =25°C
TVJ =100°C
TVJ =150°C IF= 120 A
IF=60A
IF=30A
TVJ = 100°C
VR=300V TVJ =100°C
VR=300V
IF=120A
IF=60A
IF=30A
IF=120A
IF=60A
IF=30A
TVJ =100°C
VR=300V
IRM
Qr
TVJ =100°C
IF=60A
VFR
trr
VUE 130-06
NOTE: Fig. 2 to Fig. 6 shows typical values
Fig. 7 Typical transient thermal resistance junction to case
