AN_201702_PL52_011 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Order code: EVAL_2500W_PFC_GAN_A Author: Severin Kampl and Rafael Garcia About this document Scope and purpose This is an application note dedicated to Infineon's 2500 W totem-pole full-bridge Power Factor Correction (PFC) demo board comprising CoolGaNTM e-mode HEMTs, CoolMOSTM SJ MOSFETs and an ICE3 PFC controller in combination with 1EDi HV MOSFET drivers. Intended audience This application note is intended for Infineon customers and partners using Infineon's CoolGaNTM technology. Application Note Please read the Important Notice and Warnings at the end of this document www.infineon.com/GaN Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Table of contents Table of contents About this document ....................................................................................................................... 1 1 1.1 1.2 1.2.1 1.2.2 1.3 1.4 1.5 1.6 1.7 1.8 1.8.1 1.8.2 1.8.3 1.8.4 1.8.5 1.8.6 1.8.7 PFC demonstration platform ........................................................................................... 3 Totem-pole full-bridge PFC..................................................................................................................... 3 Schematic and implementation details ................................................................................................. 4 PWM switching frequency .................................................................................................................. 4 PFC inductor design ........................................................................................................................... 4 Gate driving ............................................................................................................................................. 5 Layout considerations............................................................................................................................. 8 Thermal concept ..................................................................................................................................... 9 EMI filters ............................................................................................................................................... 10 Auxiliary power supply .......................................................................................................................... 10 Control daughter boards....................................................................................................................... 12 Zero crossing detection ................................................................................................................... 13 VBULK sensing ..................................................................................................................................... 13 Switch, diode and synchronous sectification signal generation ................................................... 13 Level shifter ...................................................................................................................................... 13 Zero current turn off and zero window comparator ....................................................................... 14 True DCM monitor / enabler ............................................................................................................ 14 Current sensing approach ............................................................................................................... 14 2 2.1 2.2 2.2.1 2.2.2 Getting started with the hardware.................................................................................. 15 Basic wiring and connections ............................................................................................................... 15 Start-up procedure................................................................................................................................ 18 AC input voltage requirements ........................................................................................................ 19 DC output voltage ............................................................................................................................ 19 3 3.1 3.2 3.3 3.4 3.5 3.6 Measurement results..................................................................................................... 20 Efficiency measurement ....................................................................................................................... 20 Gate signal measurements ................................................................................................................... 20 Start-up .................................................................................................................................................. 24 AC-line cycle drop-out test.................................................................................................................... 29 Load steps.............................................................................................................................................. 30 EMI measurement result ....................................................................................................................... 30 4 Specifications............................................................................................................... 32 5 5.1 5.1 5.2 5.3 5.3.1 5.3.1 5.3.2 5.4 Addendum ................................................................................................................... 33 Schematics of the main board .............................................................................................................. 33 Schematics of the auxiliary supply daughter board ............................................................................ 35 Schematics of the control board .......................................................................................................... 36 Bill of Materials (BOM) ........................................................................................................................... 37 Main board........................................................................................................................................ 37 Auxillary supply daughter board ..................................................................................................... 39 Controller daughter board............................................................................................................... 40 Abbreviations ........................................................................................................................................ 42 6 References ................................................................................................................... 44 7 Revision history ............................................................................................................ 45 Application Note 2 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM PFC demonstration platform 1 PFC demonstration platform This demo board shows a high-efficiency PFC stage, which exploits the advantages of Infineon's CoolGaNTM technology to boost the system efficiency above 99 percent for efficiency-critical applications, such as server or telecom rectifiers. One unique advantage within the enhancement-mode (e-mode) gallium nitride (GaN) semiconductors - with GaN being a wide-bandgap (WBG) material - is the complete absence of any reverse recovery charge. Therefore this technology enables new topologies in power classes that cannot be addressed by today's HV superjunction (SJ) power semiconductors. Based on these features, the totem-pole PFC topology is the perfect match to exploit the benefits of Infineon's CoolGaNTM technology. Our demo board shows reliable operation up to 2500 W with benchmark efficiency of 99.2 percent. To achieve this, only two discrete 70 m CoolGaNTM switches in combination with two discrete 33 m 650 V CoolMOSTM C7 Gold switches are required. All power components are Surface Mount Devices (SMDs) enabling a faster and cheaper assembly process. The control is realized with Infineon's standard ICE3 Continuous Conduction Mode (CCM) control IC. The PWM switching frequency is set to 65 kHz. Figure 1 The 2500 W totem-pole PFC demo board enabled by CoolGaNTM technology 1.1 Totem-pole full-bridge PFC The totem-pole PFC is an AC-to-DC converter concept that replaces all diodes along the current path with semiconductor switches. In this way it is possible to increase the overall efficiency of the application as the voltage drop of the diode is being mitigated by the resistive behavior of the power semiconductor switches and the lower number of conducting devices in an on-state. Figure 2 shows this topology. This PFC works in CCM, meaning the input current is commutated between transistors Q1 and Q2 depending on the duty cycle. This has the advantage that the input current ripples are significantly reduced compared to Discontinuous Current Mode (DCM) operation, so a better power factor and a better Total Harmonic Distortion (THD) factor can be achieved by CCM operation. This mode of operation is also called "hard-switching", as the commutation is performed with a positive load current across the transistors. This raises the requirement for rugged transistors suitable for commutation that do not suffer from reverse recovery issues. GaN High Electron Mobility Transistors (HEMTs) with zero recovery charge are therefore the perfect choice for this application. The absence of Qrr also reduces the turn-on losses; the cross-over of voltage and current is minimized because the device can be turned on faster. Application Note 3 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM PFC demonstration platform In contrast, soft-switching applications (such as LLC and ZVS) perform the commutation at zero current - or zero voltage - conditions. See Infineon product brochure "CoolMOSTM SJ MOSFETs benefits in both hard and soft switching SMPS topologies"[1] for a comparison of the techniques. The phase rectification stage consisting of Q3 and Q4 is realized by two SJ 650 V CoolMOSTM C7 Gold devices offering a low RDS(ON) (33 m) in a TOLL package. This latest generation of CoolMOSTM boosts the efficiency and, as these devices are switched at the zero-voltage crossing, power semiconductor devices with non-zero Qrr values can be accepted (ZVS). For details about this device please refer to the IPT65R033G7 datasheet [2]. 400 V Q1 Q3 Q2 Q4 LPFC AC IN Figure 2 Schematic of full-bridge totem-pole PFC comprising GaN HEMTs and CoolMOSTM 1.2 Schematic and implementation details This section gives some brief practical advice regarding implementation. 1.2.1 PWM switching frequency The purpose of the demo board is to show the efficiency boost enabled by using the totem-pole PFC with the latest-generation WBG power devices offering ultra-low switching losses. Nevertheless, the switching losses cannot be neglected in applications operating in CCM, and they scale linearly with the frequency. Thus, the PWM switching frequency of this application was set to 65 kHz - a standard frequency used in other hardswitching PFC topologies (like the conventional boost-PFC) - as a good balance between inductor size, permissible ripple current and target efficiency. 1.2.2 PFC inductor design The target of the PFC design was to fulfill the ripple current requirements at the nominal switching frequency and to reduce parasitic capacitances. This demonstration comprises three stacked distributed airgap cores from Magnetics, Inc. This approach allows a high inductance value over a wide frequency range without overlaying windings in order to minimize the stray capacitances. Figure 5 shows a frequency sweep measurement for the main PFC inductor. The blue curve in this plot is the measured impedance in Ohms, while the yellow curve shows the phase in degrees against the frequency (on the x-axis). The result shows that the coil exhibits inductive behavior up to 700 kHz and a first resonance frequency above 1 MHz. Assuming an ideal inductance at the cursor's position, the initial inductance value L0 can be calculated based on the following equation: = 0 = 20 0 = Application Note 4 2 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM PFC demonstration platform Using the cursor information as displayed in Figure 3, this yields: 0 = 2.182 = ~663 2 523.86 Now the parasitic capacitor can be determined: = 1 20 = 1 4 2 0 2 Assuming a resonant frequency of 1 MHz would yield: = 4 2 1 = ~38 663 uH 1 2 The goal of this optimization was to allow fast switching and to reduce peak currents within the application. This result proves that the optimization was successful since the parasitic capacitor value is very small. Figure 3 Frequency sweep of PFC coil showing inductive behavior over a wide range and the first resonance above 1 MHz 1.3 Gate driving The PFC uses conventional gate drivers for the driving of the e-mode GaN power switches as well as the CoolMOSTM MOSFETs for the phase rectification. Application Note 5 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM PFC demonstration platform To make full use of the Kelvin contact offered by the DSO20 power package, isolated gate drivers from Infineon's 1EDi family are used in this demo board. These drivers are available as 2 A and 6 A versions and offer separate source-and-sink paths for the gate currents. To optimize the performance, a 2 A driver is the best choice for the GaN HEMT, whereas a 6 A driver is preferred for the 650 V CoolMOSTM C7 Gold. Since the GaN transistors are in the high-frequency half-bridge, they must be switched much faster than the CoolMOSTM devices. Due to the internal device structure, an Infineon HV MOSFET driver in combination with an RC network is used to turn the GaN devices on and off in the most optimal way. The RC network acts as a highpass filter. It offers a low impedance path for fast signals, whereas slow signals experience a significantly higher resistance. Therefore the device is being turned on and off with a high current (several hundreds of milliamps) whereas the steady-state current, which is needed to keep the device in the on-state, is limited to a few milliamps. This means a standard MOSFET driver can be used to drive the GaN devices. The network is shown in Figure 4 and in the attached schematics. A more detailed explaination and dimensioning of the RC network can be found in the Infineon application note "Driving IGO60R070D1 enhancement-mode GaN HEMTs" [3]. One unique advantage of the CoolGaNTM technology is that the gate modules of the GaN HEMTs offer a non-isolated gate that is robust even against high voltage peaks. Since the deployed 1EDi MOSFET drivers are isolated, a straightforward driving of the high-side transistors can be used. The power DSO package offers Kelvin contacts, which migitate the common source feedback to allow faster switching for this high-frequency half-bridge. For this reason, this demo board also uses the 1EDi isolated standard drivers from Infineon in the low-side configuration. Figure 4 Schematic of generic driver stage for eMode GaN comprising Infineon's isolated 1EDi driver. The input side of the driver is supplied with 5 V and the isolated output is supplied with 12 V. Figure 4 shows the principle of the driver stage. A rectangular 6 V signal is provided from the output of a pulse transformer thru TR1-sec- AC 1 and TR1-sec-AC 2. This produces an isolated voltage of 12 V by using the BAT54S rectification diodes and the 10F 25V capacitors. The actual driving of the GaN is realized by splitting the +12 V into a positive and a negative contribution by biasing the Kelvin source contact in the middle. Thus, a positive voltage of 6 V is used to control the turn-on, whereas a -6 V voltage is available for safe turn-off. In practical terms, a +3.1 V value will result at the gate of the HEMT during steady-state turn-on, whereas a -5.9 V value is applied during turn-off. The advantage of this solution - compared to the classical RC drive (as shown in [3]) - is that the gate voltage of the GaN device is well defined with respect to the negative driver voltage. Even at small duty-cycle values (with dominant off-times) the voltage on the gate will not move toward 0 V - it will remain at -5.9 V and thus guarantee robustness against the C dv/dt that is induced by gate turn-on. The input side of the 1EDi driver is supplied with 5 V, which is the same voltage that is used by the CCM PFC control IC. The isolated secondary side of the 1EDi driver is supplied by its own isolated 12 V domain (VCC2, pin 5 and GND2, pin 8 as shown in Figure 4) whereas the reference ground for the GaN transistor is conditioned to TR1-sec-AC 2. This enables a well-defined positive output voltage during turn-on and also a well-defined Application Note 6 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM PFC demonstration platform negative driver output voltage during the off-phase, as shown in Figure 5. This solution overcomes the limitation of the time constant given by Rss*Cg as a negative level at the gate is always guaranteed by design. Even if the off-time is longer than five times (e.g. at small duty cycles or in pulse-skipping mode), the capacitor will discharge toward the negative voltage level (-5.9 V) and not to 0 V. In this way it is guaranteed that the signal-to-noise ratio on the gate is high and robustness against dv/dt-triggered events is assured. Zoom area Zoom: Iprobe: coil current in L1 Vgs: voltage between gate and kelvin-source contact Vds: voltage between drain and source contact Figure 5 Typical gate-source voltage characteristic with proposed gate drive at a load current of 16 A. V2 shows the steady-state turn-on voltage (+3.1 V) and V1 shows the turn-off voltage (-5.9 V). The driving of the CoolMOSTM devices is realized via separate turn-on and turn-off gate resistors. As the 33 m 650 V CoolMOSTM C7 Gold devices are being turned on during the zero crossing of the AC input signal, the timing is not critical. Thus, the turn-on gate resistor is chosen to be fairly high (390 ) to allow smooth turn-on waveforms. The Kelvin contacts of the TOLL package are not required for the same reason. The turn-off resistor is set to 4R7 (the standard configuration), which allows a fast turn-off. This is an additional safety measure other than the dead-time to avoid cross-conduction under abnormal conditions. The nominal VGS voltage during turn-on is approximately +13 V for the high-side transistor and +15 V for the low-side transistor respectively. Note: The gate-driving functionality can easily be monitored under LV conditions. For that purpose, supply 35 V DC on the input of the PFC board. For debugging purposes, check the supply of the HV drivers on the primary side (+5 V) and on the secondary side (+12 V) and the respective VGS signals under LV conditions. Application Note 7 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM PFC demonstration platform 1.4 Layout considerations The mainboard of the demo board is a four-layer PCB with a total thickness of 1.66 mm. The advantage of this approach is that interlayer capacitances can be realized while having sufficient space for signal routing. The complete layer stack is shown in Figure 6. Figure 6 Layer stack of main PCB One recommended way to minimize the voltage overshoots is to minimize the stray inductances along the current path in the power loop. One possible way to achieve reasonably small overshoots with the DSO packages is to minimize the area defined by the power-loop current. In practice, this means using the midlayers as a current return path to route the current back as close as possible to the forward path. This concept is shown in Figure 7. The two layers are connected with vias. T1 T2 Forward path of current Return path of current Figure 7 Principle of the power-loop concept with GaN in the DSO package (cross-section, rotated) Application Note 8 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM PFC demonstration platform Return path Return path Forward path of current Figure 8 Layout of main PCB (bottom view) and indication of current path 1.5 Thermal concept Efficient thermal management is a ongoing challenge in power electronic applications and is mostly contrary to low-parasitic designs. The power components on this demo board are exclusively SMDs with high thermal capabilities. The e-mode GaN power semiconductor is housed in a power DSO20 430 mil., which optimizes the thermal path from the chip to the heatsink while balancing the parasitic elements in the power loop. The heat generated in the GaN HEMT is transported through the PCB by thermal vias and dissipated by a common heatsink on the opposite side side of the PCB (i.e. the top side). The PCB uses 276 standard through-hole vias with a diameter of 0.6 mm and a drilling of 0.3 mm throughout the whole area of the heatslug provided by the DSO package. The temperature of the heatsink is monitored by a PT100 sensor and this information is used to control the speed of the fan. We are currently using a Thermal Interface Material (TIM) from Bergquist or HALA to isolate the PCB from the heatsink. This configuration is able to achieve an Rth,junction_to_heatsink of at least 5 K/W which allows a maximum output power of 2500 W with just two GaN devices: R th,junction_to_heatsink = R th,junction_to_case + R th,case_to_PCB + R th,PCB_Vias + R th,TIM Figure 9 shows a thermal measurement of the demo board operating at full output power. The two rectangular fields highlight the GaN power devices on the bottom side of the PCB that act as heat sources. The measurement shows that the maximum device temperature is about 74C. The maximum permitted junction temperature of the power devices is 150C. Consequently, the board could be operated at a higher ambient temperature, e.g. in a closed-chassis or high-temperature environment. This temperature measurement was performed at full load and the same conditions used for the efficiency measurement shown in Figure 25. The input voltage was set to 230 Vrms and the ambient temperature in this laboratory set-up was approximately 25C. The efficiency analysis was performed with a Yokogawa WT3000 precision power analyzer and the case temperature was captured with a thermal camera from the FLIR A40 series. Application Note 9 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM PFC demonstration platform The CoolMOSTM chips are accommodated in a TOLL package, which perfectly fits the RDS(ON) requirements for the phase-rectification half-bridge. Our full-SMD solution enables easier manufacturing as it reduces the manual soldering steps in the production line. Figure 9 Temperature measurement of GaN devices at full load (2500 W, 230 V AC input) 1.6 EMI filters The PCB is equipped with a three-stage input filter on the input and a single-stage filter on the output to suppress conducted disturbances. The concept of these filters is to suppress Common Mode (CM) and Differential Mode (DM) noise on the interface of the board toward the AC source and the active load. 1.7 Auxiliary power supply The auxiliary power supply for the generation of the voltages for the driving stages, the controller daughter card and other auxiliary circuits is generated via a flyback circuit on a separate daughter card. The flyback itself is realized with Infineon's ICE2QR2280G - an integrated power-management IC with 800 V avalanche rugged CoolMOSTM, start-up cell and QR current-mode flyback PWM controller in a DSO-16/12 package. More information about the ICE2QR2280G is available [4]. The circuit is supplied by the bulk voltage and generates the following output voltages: +15 V DC, non-isolated for driving the low-side 650 V CoolMOSTM C7 Gold +13 V DC, isolated for driving the high-side 650 V CoolMOSTM C7 Gold +5 V DC, isolated for the digital logic and the primary supply of the MOSFET drivers Application Note 10 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM PFC demonstration platform Efficiency tests have shown that this flyback system runs at around 80 percent efficiency at 3 W output power. The new ICE5 family of Infineon will increase the efficiency further. The product will become available soon. Details will be available on our webpage [5] or by contacting your local sales office for more information. If debugging of the functionality is required, we suggest supplying 35 V DC on the PFC input and measuring the output signals of the auxiliary board at the interface to the mainboard. Figure 10 The auxiliary supply daughter board Figure 11 Schematic of the auxiliary supply daughter board Application Note 11 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM PFC demonstration platform 1.8 Control daughter boards The control board represents the intelligence of the totem-pole PFC. The control is realized using an analog controller that achieves a stable operation across the complete load range and reasonable PFC, as well as handling of fault events. The analog control version shows the feasibility of having a standard PFC controller operating in the full-bridge totem-pole PFC circuitry at 65 kHz. The analog control is realized with Infineon's ICE3PCS01G, which is a CCM PFC controller that is used for classic PFC circuits comprising a CoolMOSTM switch and a SiC diode. Infineon's latest CCM PFC controller was used due to the very low Current Sensing (CS) input voltage (0.2 V). This minimizes shunt losses under critical-line conditions. More information about the functionality and features of the ICE3 controller is available on our webpage [6]. To satisfy the special requirements of the totem-pole PFC circuit, the behavior of the classic PFC controller has been extended with additional logic gates. Thus, additional features such as the phase rectification of the lowfrequency half-bridge (switching with 50 Hz or 60 Hz respectively) can be supported. A photograph of the analog control card is shown in Figure 12. The phase recification and the blanking of the PWM operation for the GaN half-bridge were realized with digital gates on the "gate" output of the ICE3 control IC. The dead-time settings are controlled with RC time constants and a comparator. The schematic is shown in Figure 13, with the extended functionality highlighted in red. Figure 12 Control card used in the full-bridge totem-pole PFC Application Note 12 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM PFC demonstration platform Figure 13 Schematic of the ICE3-based control board with extra functionality required for the totempole functionality. 1.8.1 Zero crossing detection A simple V AC zero crossing circuit is used to provide the required signal to exchange the PWM signal between the high-side and low-side switch over the sinusoidal grid input voltage. 1.8.2 VBULK sensing As the signal ground is referenced to HB2 and not to VBULK, a differential sensing circuit must be used to provide the VBULK voltage information to the PFC controller. 1.8.3 Switch, diode and synchronous sectification signal generation This block, represented by all logic circuitry at the top of the schematics shown in Figure 13, is used to accurately and correspondingly generate the switch and diode PWM signals from a single PFC gate signal for efficient utilization of the GaN devices. The proper PWM signals to the high frequency devices, i.e. GaN, and the low frequency ones, i.e. CoolMOS, depend on the grid voltage phase or semicycle. 1.8.4 Level shifter This block is necessary to step down the 13 VDC voltage signal from the PFC controller to the necessary 5 VDC level that logic circuitry needs to work properly. Application Note 13 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM PFC demonstration platform 1.8.5 Zero current turn off and zero window comparator This circuit prevents the PWM signal from being applied to the power switches for approximately 100 s during a zero crossing of the grid voltage to maintain exchange of the high-side and low-side PWM signals. This leads to elimination of possible cross-conduction in the half-bridge configuration. 1.8.6 True DCM monitor / enabler As the ICE3PCS01G controller is originally designed for a classic or traditional PFC topology where a MOSFET is switching against a SiC Shottky diode, in order to fit this controller to the CCM Totem Pole topology, a fast comparator is needed to prevent a negative current flow in the PFC choke during DCM operation. 1.8.7 Current sensing approach A cost effective and simple approach to do the current sensing for the oper control is depicted in Figure 14 Figure 14 Reference point and active current sensing resistor according to the input voltage semi-cycle as well as voltage waveform that works as reference for the PFC controller. As GND_iso is referenced to HB2 and not to VBULK, a differential rectification sensing circuit must be used to provide the V AC voltage to the PFC controller. Application Note 14 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Getting started with the hardware 2 Getting started with the hardware This section describes how to use the hardware successfully for lab evaluations. Figure 15 shows the different sub-blocks of the demo board. The auxiliary supply and the PFC control logic are on daughter boards that are connected to the PFC main board. This allows the user to exchange the daughter boards to perform a deeper investigation with (for example) a customized auxiliary supply or an external laboratory power supply. This demo board is supplied with an analog controller board (Infineon ICE3 PFC controller) on a daughter board. This means that the controller could be easily replaced with another version once another version becomes available (e.g. a digital version). Figure 16 shows a detailed view of the two different daughter boards that are connected to the main board. Output EMI filter Heatsink DC link buffering Main inductor 30 A fuse Input EMI filters Figure 15 Inrush management Daughter cards Top view of PCB with block description Controller board Figure 16 EMI filter Aux-supply board Detailed side view of the controller and auxiliary supply daughter cards 2.1 Basic wiring and connections Figure 17 shows the principle of the power signal wiring. The AC inputs are shown in blue. The DC outputs are shown in red and black. Attention must be paid to the correct polarity of the DC output signal: the red signal indicates the positive terminal (+) whereas the negative terminal is marked black (-). The corresponding terminals are also marked directly on the bottom side of the PCB. Furthermore, Figure 19 shows the recommended wiring of the power signals. These are the minimum connections that are needed to start up the Application Note 15 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Getting started with the hardware hardware. Additional wiring is not required; all of the electronics are supplied via the AC input. Now, the set-up is fully functional and ready to perform efficiency investigations. + - ~ Top view of PCB with power input and output signals + Figure 17 Figure 18 ~ ~ - Laboratory wiring of the power signals + - ~ Figure 19 Laboratory wiring of the power signals - top view Application Note 16 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Getting started with the hardware Figure 20 Wiring with force and sense wires for accurate efficiency measurements The input current (IL) can be measured with a standard current probe. It is recommended to use the wire of the current inductor to perform this task. Figure 21 shows a photograph of this measurement set-up. A current probe that is able to handle the currents up to 40 A is recommended. Figure 21 Probing of the inductor current with current probe Figure 22 shows the recommended way of probing a voltage signal. In this example the VDS voltage across the GaN switch is measured on the low-side of the high frequency half-bridge. The same technique could be applied to measure other signals such as the gate-source voltage provided that the same reference ground is used. If additional measurements are required that cannot be referred to the common ground, it is recommended to use differential voltage probes (for example, to measure the AC input voltage). Probes that meet the required voltage specifications (1000 V) are recommended. For passive, ground-related probing it is recommended to connect the probe holder as close as possible to the leads of the package and to connect the ground of each probe. It is advantageous to use the central ground connection of the oscilloscope to obtain best results. Figure 22 shows the use of probe holders to measure VDS on the low-side CoolGaNTM switch. Application Note 17 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Getting started with the hardware Figure 22 Probing of the VDS signal on the low-side GaN switch with a passive probe and a probe holder directly soldered to the PCB The demo board is equipped with a regulated fan on the heatsink. The fan is supplied with 12 V DC. The fan speed is controlled via a PWM signal generated by the on-board logic and a temperature sensor that is placed close to the CoolGaNTM switch. The fan could also be supplied externally if closed-loop operation is not required. Figure 23 shows how the fan could be supplied via an external power supply. The cables supplying the fan are simply unplugged from the main board and connected to an external supply. The red cable indicates the positive polarity, whereas the black color marks the negative polarity. The yellow cable (PWM input) is intentionally not connected. Thus, the fan is controlled by the externally supplied voltage only. 12 V DC translates to full fan speed. Figure 23 Fan supply with external laboratory voltage source for efficiency measurements. The supply voltage of the fan is set to 12 V DC. 2.2 Start-up procedure Each board has been tested for full functionality after production (see attached test report). The recommended way of starting up is to connect all of the necessary cables, as well as the external laboratory-grade source and electronic load. Set the electronic load to constant current mode and program a sink current of 100 mA. Set the AC source to an input voltage of 10 Vrms and increase the AC voltage slightly. The PFC will start operating at an input voltage of approximately 85 Vrms. The output voltage will become 390 V DC (nominal) once the PFC is in operation. Additionally, a current measurement can be performed. The current will change to a sinusoidal envelope when once the switches start operating. If this state is reached, the output power can be varied by setting the load point on the electronic load (any load jump is allowed within the specified output power range). Refer to Figure 24 to determine the maximum permissable output power as a function of the input voltage. The absolute maximum power is 2500 W at a minimum input voltage of 180 Vrms. Application Note 18 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Getting started with the hardware For the minimum input voltage (85 Vrms) do not exceed 1000 W (40 percent derating of the maximum output power as shown in Figure 24). It is recommended to connect the fan to an external 12 V laboratory-grade power supply and to monitor the temperature of the power devices during efficiency tests or long-term operation (longer than 1 hour). Start-up at full-load conditions is not recommended. 2.2.1 AC input voltage requirements The evaluation board is able to operate at input voltages from 85 to 265 Vrms. All tests were performed with a dedicated laboratory-grade AC voltage source on the input. The PFC stage supports AC mains frequencies of 50 and 60 Hz. Although the hardware is built as close as possible to real application conditions, direct connection to the AC mains is not recommended. Use dedicated laboratory voltage sources instead. Note: The start-up threshold of the PFC board is 85 V nominal. If the input voltage is below this, the boost operation will not begin and the DC link voltage will not be 390 V. Nevertheless, the basic functionality of the gate drivers and the controller can be debugged with only 35 V DC on the input. Output power vs input voltage at less than 50C Max. output power in W 2 500 2 000 1 500 1 000 500 0 85 110 135 160 185 210 235 260 Input voltage in Vrms Figure 24 Recommended derating of output power vs input voltage at 50C 2.2.2 DC output voltage The nominal output voltage of the converter is set to 390 V. This voltage is achieved throughout the wide range input and over all load conditions. The power stage controller will adapt the PWM signal accordingly if a line jump on the input or a load jump on the output occurs within the specified operating points (see Figure 34). It is recommended to use electronic loads at the output. The load must be capable of handling the voltages present and the maximum output power of 2500 W. All tests were performed with the load operating in either constant current or constant power mode as the PFC controller is able to maintain the output voltage at the nominal output voltage of 390 V. As mentioned in Chapter 2.2, start-up has to be performed at no-load conditions, meaning that the electronic load at the output has to sink a small current of 100 mA or be off when the input voltage is applied to the PFC. Application Note 19 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Measurement results 3 Measurement results This section provides an overview of typical measurement results. All results were measured in laboratory conditions at an ambient temperature of 25C. 3.1 Efficiency measurement The concept of this demo board is to show that Infineon's GaN in combination with the best-in-class 650 V CoolMOSTM C7 Gold can push the efficiency above 99 percent. Figure 25 shows the measured efficiency curve. The red line shows the complete system efficiency, measured at the AC input and the DC output of the converter. All power losses present in the application (the auxiliary supply, the cooling fan, the control logic, the fuse, the cable contact resistances and the losses of the EMI filters) are included in the efficiency graph in Figure 25. The efficiency curve in Figure 25 was obtained at an input voltage of 230 Vrms and at an ambient temperature of 25C by using sense contacts connected to the equipment (four-wire measurement). The proposed cabling setup is shown in Figure 17. The evaluation of the efficiency was performed with a Yokogawa WT3000 precision power analyzer as shown in Figure 25. System efficiency (%) 99,5% 99,0% 98,5% 98,0% 97,5% 97,0% 96,5% 0 Figure 25 250 500 750 1000 1250 1500 Output power (W) 1750 2000 2250 2500 PFC efficiency vs output power at Vin = 230 Vrms. The measured peak efficiency is 99.2 percent at 1 kW output power. 3.2 Gate signal measurements Figure 30 shows a typical VGS while operating in high-load CCM operation. In the off-state VGS is approximately -6 V, whereas the voltage in the on-state reaches approximately 3.2 V. Further details are given in Figure 27, where a turn-off event of the HEMT is shown. This figure shows a remarkable linear VDS slope, rising in about 10 ns from the on-state to the DC link voltage - caused by the almost linear Coss behavior of the GaN. The maximum voltage peak is 480 V, which is within the recommended derating target of 80 percent of VDS,max. Application Note 20 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Measurement results Iprobe: coil current in L1 VGS: voltage between gate and Kelvin source contact VDS: voltage between drain-and-source contact Figure 26 PFC operating in CCM mode at an average current of 17.86 A. The yellow curve shows the VGS signal. The cursor position measures the steady-state VGS in the on- and off-states. The blue curve shows VDS measured on the low-side CoolGaNTM switch. The magenta curve is the current measured in the main PFC inductor. Application Note 21 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Measurement results Iprobe: coil current in L1 Vgs: voltage between gate and kelvin-source contact Vds: voltage between drain and source contact Figure 27 Typical PFC waveforms in CCM mode operation at turn-on of the low-side GaN HEMT. The magenta line represents the inductor current, the blue curve VDS and the yellow curve shows the VGS signal. The dip on the VGS signal is caused by the fast dv/dt of VDS and the finite CMRR of the voltage probe. This presents no risk to operation. Application Note 22 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Measurement results Iprobe: coil current in L1 Vgs: voltage between gate and kelvin-source contact Vds: voltage between drain and source contact Figure 28 Typical PFC waveforms in CCM mode operation. The magenta line represents the inductor current, the blue curve VDS and the yellow curve shows the VGS signal. The spike of the VGS signal is a measurement artifact caused by the fast transition of VDS and the limited CMRR of the voltage probe. Application Note 23 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Measurement results Iprobe: coil current in L1 Vgs: voltage between gate and kelvin-source contact Vds: voltage between drain and source contact Figure 29 The zoom on the yellow waveform (VGS) reveals the dead-time settings (approximately 90 ns). This value was chosen to minimize the time when the CoolGaNTM HEMT is inactively conducting (VGS is below the threshold, but the channel conducts in reverse similar to a bodydiode) and to maximize the active freewheeling time (VGS is greater than VTH and the channel is actively driven on). 3.3 Start-up Figure 30 shows start-up of the PFC with a minimum load of 300 mA. The blue curve shows the DC link voltage on the output whereas the orange curve represents the input current. As shown, the maximum inrush current is 8 A at 230 Vrms and 35.4 A at 90 Vrms. The complete start-up procedure takes less than 500 ms. Application Note 24 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Measurement results Iprobe: coil current in L1 VGS: voltage between gate and Kelvin source contact VDS: voltage between drain-and-source contact VBULK: voltage measured on the PFC output Figure 30 Start-up of PFC at 230 Vrms without load current. The blue curve represents VDS voltage, the magenta curve shows the input current, the green curve shows the DC link voltage and the yellow curve shows VGS voltage of the GaN HEMT. The measured peak input current is 7.9 A. Application Note 25 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Measurement results Iprobe: coil current in L1 Vgs: voltage between gate and kelvin-source contact Vds: voltage between drain and source contact Vbulk: voltage measured on the PFC output Figure 31 Start-up of PFC at 90 Vrms without load current. The blue curve represents the VDS voltage, the magenta curve shows the input current, the green curve shows the DC-link voltage and the yellow curve shows the VGS voltage of the GaN HEMT. The measured peak input current is 35.4 A. Application Note 26 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Voltage (V) Current (A) Measurement results V AC: voltage on the input of the PFC Iin: input current Figure 32 Continuous operation within tolerance conditions (Vin = 176 Vrms, blue curve); orange curve shows the input current; output power is 2500 W. Application Note 27 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Measurement results Iprobe: coil current in L1 VGS: voltage between gate and Kelvin source contact VDS: voltage between drain and source contact VCC2: secondary supply voltage of the 1EDi drivers Figure 33 Continuous operation at nominal conditions (Vin = 230 Vrms); the output power is 500 W. The blue curve represents VDS, the magenta curve shows the input current, the green curve shows the supply voltage of the 1EDi drivers on the secondary side and the yellow curve shows VGS voltage of the GaN HEMT. Application Note 28 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Measurement results 3.4 AC-line cycle drop-out test Voltage (V) Current (A) Several drop-out tests of the AC input show the robustness of the demo board against power line disturbances. Figure 34 shows a severe loss of the AC input voltage for 20 ms and the subsequent recovery of the DC link voltage. V AC: voltage on the input of the PFC Iin: input current V DC: output voltage of PFC Figure 34 Measurement result of a 20 ms AC-line cycle drop-out test. The result shows that the demo board can handle this severe line disturbance and recover to full operation in less than 65 ms. Application Note 29 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Measurement results 3.5 Load steps The PFC demo board can handle load transients from 0 to 100 percent, as shown in Figure 34. Figure 35 Measurement result of load step from 0 to 100 percent load. The inductor current peaks at approximately 28 A, and the output voltage recovers in about 40 ms. Maximum bus voltage deviation is -60 V. 3.6 EMI measurement result An EMI test has been performed as well as the efficiency and PLC tests. The results in Figure 36 show the conducted EMI at full load and nominal input voltage. The test was performed in a certified Infineon EMI laboratory. Application Note 30 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Measurement results Figure 36 Conducted EMI measurement result showing a pass of the EN 55022 standard Application Note 31 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Specifications 4 Specifications Note: All ratings are specified for lab conditions and an ambient temperature of 25C. - Vin = 85 Vrms to 265 Vrms - Pout = 0 W to 2500 W - fsw = 65 kHz - tambient = 25C - Vout,nom = 390 V DC - Vout, min = 340 V DC - Vout,max = 440 V DC Note: Derate output power for lower input voltage according to Figure 24. Application Note 32 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Addendum 5 Addendum 5.1 Schematics of the main board Figure 37 CCM totem pole PFC topology power section Application Note 33 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Addendum Figure 38 EMI filter and protections as well as heat sink temperature control Application Note 34 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Addendum 5.1 Figure 39 Schematics of the auxiliary supply daughter board Auxiliary suppy Application Note 35 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Addendum 5.2 Figure 40 Schematics of the control board Control circuitry Application Note 36 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Addendum 5.3 Bill of Materials (BOM) 5.3.1 Main board Part Value QTY Voltage Package Description C25, C26 100 nF 2 630 V CAP1808R C27, C28 100 nF 2 630 V C1, C2, C6 4n7 3 C12, C19 10 nF C16, C33 3n3 Manufacturer Supplier Part number Ceramic capacitor Mouser 80C1808C104KBRACTU Ceramic capacitor Farnell 1838753 300 V CAP1812R C foil capacitor 10 mm grid Foil capacitor Farnell 1166531 2 50 V CAP0805-IFX Ceramic capacitor AVX Farnell 1740669 2 500 V CAP0805-IFX Ceramic capacitor KEMET Farnell 1702127 450 V C aluminum electrolytic 10 mm Electrolytic capacitor Panasonic Electronic Components Digi-Key P14904-ND C9, C10 560 F 2 D1, D2 D_P600 2 D_P600 Diode Vishay General Semiconductor Farnell 1702801 NTC1, NTC2 14 R 2 R_SL22 NTC resistor Ametherm Digi-Key 570-1039-ND R8, R12 0R008 2 Resistor Welwyn Farnell 1621974RL C43 150 F 1 16 V Ceramic capacitor Farnell 2354978 C7 4n7 1 300 V RES1206R CAP Panasonic SPCap C foil capacitor 10 mm grid Foil capacitor Farnell 1166531 D11 RSFJL 1 SMA_SUB Diode D5 Farnell 1559145RL Infineon Technologies Farnell 1056502 Texas Instruments Digi-Key 296-13010-2-ND Microchip Digi-Key TC648BEUA-ND Farnell 1333642 BAT165 SN74LVC 2G14 1 SOD323 1 SOT23-6 Schottky diode Dual Schmitt trigger inverter TC648 Relay OMRON G5LE-1E 12DC 1 SOIC8 TC648 fan controller IC 1 REL_G5LE-1E 12DC Relay OMRON G5LE-1E 12DC 10 F 6 25 V CAP0805-IFX Ceramic capacitor 100 nF 6 25 V CAP0805-IFX Ceramic capacitor C15, C24 1 F 2 25 V CAP0805-IFX Ceramic capacitor C17 C21, C29, C37, C38 10 uF 1 25 V CAP0805-IFX Ceramic capacitor 10 pF 4 50 V CAP0805-IFX Ceramic capacitor C23, C42 1 nF 2 50 V CAP0805-IFX Ceramic capacitor C3, C8 1 F 2 305 V AC C foil 22.5 mm Foil capacitor Mouser 871-B32923C3105M C4 1 F 1 305 V AC C foil 22.5 mm Foil capacitor Mouser 871-B32923C3105M C44 1 F 1 25 V CAP0805-IFX Ceramic capacitor C5 3.3 F 1 305 V AC C foil 27.5 mm Mouser 871-B32924E3335M Mouser 771-BAT54S-T/R Mouser 693-0031.8201 Infineon Technologies 1EDI20N12AF IC3 IC7 REL1 C11, C20, C22, C30, C34, C36 C13, C14, C18, C31, C32, C35 D3, D6 BAT54-04 F1 Fuse holder IC1, IC5 Application Note 1EDI20N 12AF 2 SOT23R Foil capacitor Dual small-signal Schottky diodes 1 Fuse holder 5 x 20 Fuse holder - 22 mm x 9 mm for a 5 mm x 20 mm fuse SO8 2 A single-channel MOSFET gate-driver IC 2 250 V AC 37 Infineon Technologies Infineon Technologies Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Addendum IC2 2EDN752 4F 1 SOIC127P600X 175-8N-2 5 A dual-channel lowside HV MOSFET driver Infineon Technologies Infineon Technologies 2EDN7524F IC4, IC6 1EDI60N 12AF 2 SO8 6 A single-channel MOSFET gate-driver IC Infineon Technologies Infineon Technologies 1EDI60N12AF NTC3 100 k 1 PTC 0805 NTC resistor EPCOS Mouser 871-B57471V2104J62 R1, R13 680 R 2 RES0805-IFX Resistor R10 33 k 1 RES0805-IFX Resistor R11 47 k 1 RES0805-IFX Resistor R2, R5, R14, R17 2R 4 RES0805-IFX Resistor R29 R3, R4, R9, R15, R16, R19, R24 27 k 1 RES0805-IFX Resistor 390 R 7 RES0805-IFX Resistor R31 7k5 1 RES0805-IFX Resistor R32 15 k 1 RES0805-IFX Resistor R6 3k3 1 RES0805-IFX Resistor R7, R18 4R7 2 RES0805-IFX Resistor 2 P/PG-DSO-20 2 HSOF-8-2 600 V GaN power transistor 70 m n-MOSFET with source sense Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies IPT65R033C7 5 mm x 20 mm Anti-surge T LBC min fuse, 15 A 5 x 20 mm RS Components 541-4599 T3, T4 IGO60R0 70D1 IPT65R03 3G7 Fuse 15 A 250 VT 1 650 H 1 T1, T2 250 V AC Magnetics: L1 TR1 L2, L3 1 1 mH 2 L4 1 mH 1 L5 22 H 1 Inductor AmoFlux - V2 Transformer Ferroxcube Inductor WECMBNC Inductor WECMB L Inductor Bourns 2305V-RC Inductor ICE Transformers ICE Transformers 8024.3301.028 Pulse transformer ICE Transformers ICE Transformers 8034.0103.014 THT CM power line choke, WE-CMB, L = 1.00 mH Wurth Elektronik eiSos GmbH Farnell 1636292 THT CM power line choke, WE-CMB, L = 1.00 mH Wurth Elektronik eiSos GmbH Farnell 1636292 Inductor Bourns Inc. Digi-Key M8881-ND Mechanical: H1 Fischer Elektroni k LAM4 40mm x 40 mm x 50 mm with 12 V DC fan (ebmpap st 412 JHH) X5 S1, S2 Application Note 1 1 M3 2 Heatsink Fischer Elektronik Pin header 3c single - vertical Heatsink with integrated 12 V fan Fischer Elektronik Pin header, three contacts, 2.54 mm Do not assemble! 38 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Addendum S7, S8, S9, S10, S11, S12 M3 screws 6 Hex socket button steel-bright zincplated socket screw, M3 x 10 mm for heatsink mounting, add M3 metal washers between screws and PCB M3 Spacer bottom: HTSNM3-15-6-1, 15 mm high nylon-threaded hex spacer 6 mm wide for M3 thread spacers top: two pieces of "HTSNM3-25-6-2, 25 mm high nylon-threaded hex spacer 6 mm wide with 8 mm bolt length for M3 thread" connected to achieve an overall stand-off of 50 mm Spacer bottom: HTSNM3-15-6-1, 15 mm high nylon-threaded hex spacer 6 mm wide for M3 thread spacer top: 2x "HTSN-M3-10-6-2, 10 mm high nylonthreaded hex spacer 6 mm wide with 8 mm bolt length for M3 thread" Self-adhesive fiberglass thermal gap pad, 1.8 W/m*K, 10 x 12 in S3, S4, S5 M3 spacers 3 M3 S6 M3 spacers 2 M3 Insulation material Sil-PAD 1500ST 1 Foil 5.3.1 Auxillary supply daughter board Designator value C100, C101, C102, C106, C107, C108, C112, C113, C117 10F C103, C109 270uF QTY Tolerance Voltage Footprint Bergquist Description 483-9559 RS Components 102-6378 102-6542 RS Components 102-6378 102-6508 RS Components 127-063 Manufacturer Supplier 1 Supplier Part Number 1 25V CAP0805IFX Capacitor Ceramic 16V C_POL_SM D_6.3 Capacitor Electrolyt Panasonic, Panasonic Electronic Components Mouser, Digi-Key 667-16SVPG270M, PCE5081CT-ND 1% 630V CAP1812R Capacitor Ceramic AVX Farnell 1838753 1% 500V CAP1206R Capacitor Ceramic AVX Farnell 1216450 Farnell 1467491 Farnell 1559145RL Mouser 726-BAT165E6327 Mouser 726ICE2QR2280GXUMA1 Digi-Key 296-17328-2-ND 9 1% 2 1% C104 100nF 1 C105 220pF 1 C110, C115 1nF 2 C111 22nF 1 C114 100pF 1 1% 1% 1% 50V 50V 50V CAP0805IFX CAP0805IFX CAP0805IFX Capacitor Ceramic Capacitor Ceramic Capacitor Ceramic D100, D101, D102 3 SMB / DO214AA Diode D103 1 SMA_SUB Diode D104 BAT165 1 SOD323 Schottky-Diode IC100 ICE2QR2280G 1 PG-DSO-12 CoolSET(R) - Q1 IC101 TL431 1 SOT23R TL431- Adjustable Precision Shunt Regulator R100, R101 68k 2 1% RES1206R Resistor 1% RES0805IFX Resistor R102 RS Components 15k Application Note 1 39 FAIRCHILD SEMICONDUCT OR TAIWAN SEMICONDUCT OR Infineon Technologies Infineon Technologies Texas Instruments Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Addendum R103 1R5 1 R104, R107, R109 2k 3 R105, R110 8k45 2 R106 68R 1 R108 2k7 1 TF100 FLYBACK_2P_1S_ EE16-8PIN 1 RES1206R 1% RES0805IFX RES0805IFX RES0805IFX RES0805IFX EE16 THT Bobbin 1% 1% 1% 1% Resistor Resistor Resistor Resistor Resistor Magentic ICEtransformer s ICEtransfor mers Infineon Technologies Mouser 726-TLE42642GHTSA2 8032.0205.012 U100 TLE4264-2G 1 SOT-223-4 5 V Low Drop Fixed Voltage Regulator, 5.5 to 45 V Supply, -40 to 150 degC, PG-SOT223 (SC-73), Reel, Green U101 Optocoupler 1 DIL-4-SMD Optocoupler Vishay Semiconductor Opto Division Digi-Key VO618A-3X017TCT-ND PIN Header 5C Single2mm - THT SAMTEC TMM-105-01L-S-RA Board-ToBoard Connector, Right Angle (abgewinkelt), TMM Series, Through Hole, Header, 5, 2 mm SAMTEC Farnell 1803413 X100, X101 Pin Header 5 contacts 5.3.2 2 Controller daughter board Designator value QTY Tolerance Voltage Footprint Description C200, C203, C205, C210, C213, C214, C219, C223 1uF 8 1% 25V CAP0805IFX Capacitor ceramic C201, C212 470pF 2 1% 50V CAP0805IFX Capacitor ceramic C202, C204, C206, C217 33pF 4 1% 50V CAP0805IFX Capacitor ceramic C207 150pF 1 1% 25V CAP0805IFX Capacitor ceramic C208 68pF 1 1% 25V CAP0805IFX Capacitor ceramic C209, C224 10nF 2 1% 50V CAP0805IFX Capacitor ceramic C211 6.8nF 1 1% 50V CAP0805IFX Capacitor ceramic C215, C218, C221 100nF 3 1% 25V CAP0805IFX Capacitor ceramic C216 10uF 1 1% 25V CAP0805IFX Capacitor ceramic C220 470nF 1 1% 25V CAP0805IFX Capacitor ceramic C222 10pF 1 1% 50V CAP0805- Capacitor ceramic Application Note 40 Manufacturer Supplier 1 Supplier Part Number 1 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Addendum IFX D200, D201 2 SMA_SUB Diode TAIWAN SEMICONDU CTOR Farnell 1559145RL Infineon Technologie s Mouser 726-BAT54E6327 D202 Bat54C 1 SOT23_N D203, D205 BAT165 2 SOD323 Schottky diode Infineon Technologie s Mouser 726-BAT165E6327 SOD323 Zener diode ROHM Farnell 1680099RL D204 1 4.7V IC200 1 SOT23-6 Low voltage, precision comparator with push-pull output TEXAS INSTRUMEN TS Farnell 2147763 IC201 SN74AC32PW 1 SO14 wide TEXAS INSTRUMENTS SN74AC32PW - LOGIK QUAD 2IN POS-ODER GATE 14TSSOP Texas Instruments Digi-Key 296-33645-5-ND IC202 ICE3PCS01G 1 PG-DSO14 CCM_PFC_Controller_Stan dalone Infineon Technologie s Mouser ICE3PCS01GXUMA1 IC203, IC205 SN74AC08PW 2 SO14 wide TEXAS INSTRUMENTS SN74AC08PW LOGIK,QUAD 2IN POS-UND GATE,14TSSOP Texas Instruments Mouser 595-SN74AC08PW IC204 LT1013DDG4 1 SO8 TEXAS INSTRUMENTS LT1013DDG4 - OP AMP,DUAL PRAEZISION, 1013, SOIC8 TEXAS INSTRUMEN TS Farnell 9589759 IC206 LM293AD 1 SO8 TEXAS INSTRUMENTS LM293AD - KOMPARATOR DUAL,SMD SOIC8, 293 Texas Instruments Digi-Key 296-26090-1-ND 1 SO14 wide TEXAS INSTRUMENTS SN74AC04PW - LOGIK, HEX INVERTER, 14TSSOP TEXAS INSTRUMEN TS Farnell 1741166 IC207 R200 510R 1 1% RES0805IFX Resistor R201, R221, R222 5.1k 3 1% RES0805IFX Resistor R202 500k 1 1% RES0805IFX Resistor R203, R204, R205, R209, R210, R211, R212, R213, R214, R216, R218, R227, R228, R229, R232, R233 1MOhm 16 1% RES0805IFX Resistor Application Note 41 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Addendum R206, R226, R231 510R 3 1% RES0805IFX Resistor R207, R208, R215, R217, R219 1MOhm 5 1% RES0805IFX Resistor R220, R235 25k5 2 1% RES0805IFX Resistor R223 10kOhm 1 1% RES0805IFX Resistor R224, R225, R242 1k 3 1% RES0805IFX Resistor R230 68.2k 1 1% RES0805IFX Resistor R234, R236 200kOhm 2 1% RES0805IFX Resistor R237 330kOhm 1 1% RES0805IFX Resistor R238 68kOhm 1 1% RES0805IFX Resistor R239, R240 100k 2 1% RES0805IFX Resistor R241 30.1kOhm 1 1% RES0805IFX Resistor R243 3.9MOhm 1 1% RES0805IFX Resistor R244 47k 1 1% RES0805IFX Resistor R245 150kOhm 1 1% RES0805IFX Resistor T200, T201 BSS138N 2 SOT-23-3 3 PIN Header 5C Single2mm THT X200, X201, X202 5.4 Mouser 71-CRCW080525.5K-E3 VISHAY DRALORIC Farnell 1652981 NMOS FET Infineon Technologie s Mouser 726BSS138NH6327 SAMTEC TMM-105-01-L-SRA Board-To-Board Connector, Right Angle (abgewinkelt), TMM Series, Through Hole, Header, 5, 2 mm SAMTEC Farnell 1803413 Abbreviations SMPS Switched Mode Power Supply PFC Power Factor Correction Application Note Vishay / Dale 42 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Addendum HV High Voltage MOSFET Metal Oxide Semiconductor Field Effect Transistor GaN Gallium nitride CCM PFC Continuous Current Mode Power Factor Correction RDS(ON) Drain source on-state resistance Vin Input voltage Vout Output voltage Pout Output power fsw Switching frequency tambient Ambient temperature EMI Electro-Magnetic Interference CS Current Sense HB1 Half-Bridge point 1 (boost stage) HB2 Half-Bridge point 2 (synchronous grid rectification) VBULK+ Bulk voltage positive rail VBULK- Bulk voltage negative rail PTC Positive Temperature Coefficient ISO Isolated GND Ground LS Low-Side HS High-Side n.c. Not Connected VCS Voltage on current sense Rshunt Resistive shunt for current sensing DSP Digital Signal Processor PWM Pulse Width Modulated QR flyback Quasi Resonant flyback DCM Discontinuous Current Mode Rth Thermal resistance SMD Surface Mount Device PCB Printed Circuit Board TIM Thermal Interface Material/Thermal Insulation Material CMRR Common Mode Rejection Ratio ACLCDO AC-Line Cycle Drop-Out Application Note 43 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM References 6 References [1] http://www.infineon.com/dgdl/Infineon-ProductBrochure_CoolMOS_Benefits_in_Hard_Soft_Switching-BCv06_16-EN.pdf?fileId=db3a3043338c8ac80133aca62ba63047 [2] http://www.infineon.com/dgdl/Infineon-IPT65R033G7-DS-v02_01EN.pdf?fileId=5546d46253f650570154190220f14f1f [3] Driving 600 V CoolGaNTM high electron mobility transistors [4] http://www.infineon.com/cms/en/product/power/ac-dc-power-conversion/ac-dc-integrated-power-stagecoolset/ac-dc-quasi-resonantcoolset/ICE2QR2280G/productType.html?productType=db3a304425afcf6a01262c7b5952385b [5] http://www.infineon.com/cms/en/product/power/ac-dc-powerconversion/channel.html?channel=5546d4624d6fc3d5014d9f3987485627 [6] http://www.infineon.com/cms/en/product/power/ac-dc-power-conversion/ac-dc-pwm-pfc-controller/pfcccm-continuous-conduction-modeic/ICE3PCS01G/productType.html?productType=db3a304329a0f6ee0129a67b7e462b48 Application Note 44 Revision 1.1 05-11-2018 2500 W full-bridge totem-pole power factor correction using CoolGaNTM Revision history 7 Revision history Major changes since the last revision Page or reference Description of change Rev 1.1 Modified first page, corrected product name of GaN HEMT in BOM, added more information about current sensing concept, added BOM of daughter cards, added more description about control daughter card Application Note 45 Revision 1.1 05-11-2018 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 05-11-2018 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2019 Infineon Technologies AG. AN_201702_PL52_011owners. All Rights Reserved. Do you have a question about this document? Email: erratum@infineon.com Document reference AN_201702_PL52_011 IMPORTANT NOTICE The information contained in this application note is given as a hint for the implementation of the product only and shall in no event be regarded as a description or warranty of a certain functionality, condition or quality of the product. Before implementation of the product, the recipient of this application note must verify any function and other technical information given herein in the real application. Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind (including without limitation warranties of non-infringement of intellectual property rights of any third party) with respect to any and all information given in this application note. 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