EVAL2500WPFCGANATOBO1 - INFINEON TECHNOLOGIES AG

Application Note Please read the Important Notice and Warnings at the end of this document Revision 1.1

www.infineon.com/GaN 05-11-2018

AN_201702_PL52_011

2500 W full-bridge totem-pole power factor

correction using CoolGaN™

Order code: EVAL_2500W_PFC_GAN_A

Author: Severin Kampl and Rafael Garcia

About this document

Scope and purpose

This is an application note dedicated to Infineon’s 2500 W totem-pole full-bridge Power Factor Correction (PFC)

demo board comprising CoolGaNTM e-mode HEMTs, CoolMOSTM SJ MOSFETs and an ICE3 PFC controller in

combination with 1EDi HV MOSFET drivers.

Intended audience

This application note is intended for Infineon customers and partners using Infineon’s CoolGaN™ technology.

  
Application Note  2  Revision 1.1  
    05-11-2018   
W full-bridge totem-pole power factor correction using 
CoolGaN™ 
  
Table of contents 
  
Table of contents 
About this document ....................................................................................................................... 1 
PFC demonstration platform ........................................................................................... 3 
1 Totem-pole full-bridge PFC ..................................................................................................................... 3 
2 Schematic and implementation details ................................................................................................. 4 
2.1 PWM switching frequency .................................................................................................................. 4 
2.2 PFC inductor design ........................................................................................................................... 4 
3 Gate driving ............................................................................................................................................. 5 
4 Layout considerations ............................................................................................................................. 8 
5 Thermal concept ..................................................................................................................................... 9 
6 EMI filters ............................................................................................................................................... 10 
7 Auxiliary power supply .......................................................................................................................... 10 
8 Control daughter boards....................................................................................................................... 12 
8.1 Zero crossing detection ................................................................................................................... 13 
8.2 VBULK sensing ..................................................................................................................................... 13 
8.3 Switch, diode and synchronous sectification signal generation ................................................... 13 
8.4 Level shifter ...................................................................................................................................... 13 
8.5 Zero current turn off and zero window comparator ....................................................................... 14 
8.6 True DCM monitor / enabler ............................................................................................................ 14 
8.7 Current sensing approach ............................................................................................................... 14 
Getting started with the hardware .................................................................................. 15 
1 Basic wiring and connections ............................................................................................................... 15 
2 Start-up procedure ................................................................................................................................ 18 
2.1 AC input voltage requirements ........................................................................................................ 19 
2.2 DC output voltage ............................................................................................................................ 19 
Measurement results..................................................................................................... 20 
1 Efficiency measurement ....................................................................................................................... 20 
2 Gate signal measurements ................................................................................................................... 20 
3 Start-up .................................................................................................................................................. 24 
4 AC-line cycle drop-out test .................................................................................................................... 29 
5 Load steps .............................................................................................................................................. 30 
6 EMI measurement result ....................................................................................................................... 30 
Specifications ............................................................................................................... 32 
Addendum ................................................................................................................... 33 
1 Schematics of the main board .............................................................................................................. 33 
1 Schematics of the auxiliary supply daughter board ............................................................................ 35 
2 Schematics of the control board .......................................................................................................... 36 
3 Bill of Materials (BOM) ........................................................................................................................... 37 
3.1 Main board ........................................................................................................................................ 37 
3.1 Auxillary supply daughter board ..................................................................................................... 39 
3.2 Controller daughter board ............................................................................................................... 40 
4 Abbreviations ........................................................................................................................................ 42 
References ................................................................................................................... 44 
Revision history ............................................................................................................ 45 
 
 

Application Note 3 Revision 1.1

05-11-2018

PFC demonstration platform

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

1 PFC demonstration platform

This demo board shows a high-efficiency PFC stage, which exploits the advantages of Infineon’s CoolGaNTM

technology to boost the system efficiency above 99 percent for efficiency-critical applications, such as server or

telecom rectifiers.

One unique advantage within the enhancement-mode (e-mode) gallium nitride (GaN) semiconductors – with

GaN being a wide-bandgap (WBG) material – is the complete absence of any reverse recovery charge. Therefore

this technology enables new topologies in power classes that cannot be addressed by today’s HV superjunction

(SJ) power semiconductors. Based on these features, the totem-pole PFC topology is the perfect match to

exploit the benefits of Infineon’s CoolGaNTM technology.

Our demo board shows reliable operation up to 2500 W with benchmark efficiency of 99.2 percent. To achieve

this, only two discrete 70 mΩ CoolGaNTM switches in combination with two discrete 33 mΩ 650 V CoolMOSTM C7

Gold switches are required. All power components are Surface Mount Devices (SMDs) enabling a faster and

cheaper assembly process. The control is realized with Infineon’s standard ICE3 Continuous Conduction Mode

(CCM) control IC. The PWM switching frequency is set to 65 kHz.

Figure 1 The 2500 W totem-pole PFC demo board enabled by CoolGaNTM technology

1.1 Totem-pole full-bridge PFC

The totem-pole PFC is an AC-to-DC converter concept that replaces all diodes along the current path with

semiconductor switches. In this way it is possible to increase the overall efficiency of the application as the

voltage drop of the diode is being mitigated by the resistive behavior of the power semiconductor switches and

the lower number of conducting devices in an on-state. Figure 2 shows this topology.

This PFC works in CCM, meaning the input current is commutated between transistors Q1 and Q2 depending on

the duty cycle. This has the advantage that the input current ripples are significantly reduced compared to

Discontinuous Current Mode (DCM) operation, so a better power factor and a better Total Harmonic Distortion

(THD) factor can be achieved by CCM operation. This mode of operation is also called “hard-switching”, as the

commutation is performed with a positive load current across the transistors. This raises the requirement for

rugged transistors suitable for commutation that do not suffer from reverse recovery issues. GaN High Electron

Mobility Transistors (HEMTs) with zero recovery charge are therefore the perfect choice for this application. The

absence of Qrr also reduces the turn-on losses; the cross-over of voltage and current is minimized because the

device can be turned on faster.

Application Note 4 Revision 1.1

05-11-2018

PFC demonstration platform

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

In contrast, soft-switching applications (such as LLC and ZVS) perform the commutation at zero current – or

zero voltage – conditions. See Infineon product brochure “CoolMOS™ SJ MOSFETs benefits in both hard and

soft switching SMPS topologies”[1] for a comparison of the techniques.

The phase rectification stage consisting of Q3 and Q4 is realized by two SJ 650 V CoolMOS™ C7 Gold devices

offering a low RDS(ON) (33 mΩ) in a TOLL package. This latest generation of CoolMOSTM boosts the efficiency and,

as these devices are switched at the zero-voltage crossing, power semiconductor devices with non-zero Qrr

values can be accepted (ZVS). For details about this device please refer to the IPT65R033G7 datasheet [2].

400 V

AC IN

LPFC

Figure 2 Schematic of full-bridge totem-pole PFC comprising GaN HEMTs and CoolMOSTM

1.2 Schematic and implementation details

This section gives some brief practical advice regarding implementation.

1.2.1 PWM switching frequency

The purpose of the demo board is to show the efficiency boost enabled by using the totem-pole PFC with the

latest-generation WBG power devices offering ultra-low switching losses. Nevertheless, the switching losses

cannot be neglected in applications operating in CCM, and they scale linearly with the frequency. Thus, the

PWM switching frequency of this application was set to 65 kHz – a standard frequency used in other hard-

switching PFC topologies (like the conventional boost-PFC) – as a good balance between inductor size,

permissible ripple current and target efficiency.

1.2.2 PFC inductor design

The target of the PFC design was to fulfill the ripple current requirements at the nominal switching frequency

and to reduce parasitic capacitances. This demonstration comprises three stacked distributed airgap cores

from Magnetics, Inc. This approach allows a high inductance value over a wide frequency range without

overlaying windings in order to minimize the stray capacitances. Figure 5 shows a frequency sweep

measurement for the main PFC inductor. The blue curve in this plot is the measured impedance in Ohms, while

the yellow curve shows the phase in degrees against the frequency (on the x-axis). The result shows that the

coil exhibits inductive behavior up to 700 kHz and a first resonance frequency above 1 MHz. Assuming an ideal

inductance at the cursor’s position, the initial inductance value L0 can be calculated based on the following

equation:

     



Application Note 5 Revision 1.1

05-11-2018

PFC demonstration platform

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

Using the cursor information as displayed in Figure 3, this yields:

 

    

Now the parasitic capacitor can be determined:



  

 

   





Assuming a resonant frequency of 1 MHz would yield:

  

   

The goal of this optimization was to allow fast switching and to reduce peak currents within the application.

This result proves that the optimization was successful since the parasitic capacitor value is very small.

Figure 3 Frequency sweep of PFC coil showing inductive behavior over a wide range and the first

resonance above 1 MHz

1.3 Gate driving

The PFC uses conventional gate drivers for the driving of the e-mode GaN power switches as well as the

CoolMOSTM MOSFETs for the phase rectification.

Application Note 6 Revision 1.1

05-11-2018

PFC demonstration platform

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

To make full use of the Kelvin contact offered by the DSO20 power package, isolated gate drivers from

Infineon’s 1EDi family are used in this demo board. These drivers are available as 2 A and 6 A versions and offer

separate source-and-sink paths for the gate currents. To optimize the performance, a 2 A driver is the best

choice for the GaN HEMT, whereas a 6 A driver is preferred for the 650 V CoolMOSTM C7 Gold.

Since the GaN transistors are in the high-frequency half-bridge, they must be switched much faster than the

CoolMOSTM devices. Due to the internal device structure, an Infineon HV MOSFET driver in combination with an

RC network is used to turn the GaN devices on and off in the most optimal way. The RC network acts as a high-

pass filter. It offers a low impedance path for fast signals, whereas slow signals experience a significantly higher

resistance. Therefore the device is being turned on and off with a high current (several hundreds of milliamps)

whereas the steady-state current, which is needed to keep the device in the on-state, is limited to a few

milliamps. This means a standard MOSFET driver can be used to drive the GaN devices. The network is shown in

Figure 4 and in the attached schematics. A more detailed explaination and dimensioning of the RC network can

be found in the Infineon application note “Driving IGO60R070D1 enhancement-mode GaN HEMTs” [3]. One

unique advantage of the CoolGaNTM technology is that the gate modules of the GaN HEMTs offer a non-isolated

gate that is robust even against high voltage peaks.

Since the deployed 1EDi MOSFET drivers are isolated, a straightforward driving of the high-side transistors can

be used. The power DSO package offers Kelvin contacts, which migitate the common source feedback to allow

faster switching for this high-frequency half-bridge. For this reason, this demo board also uses the 1EDi isolated

standard drivers from Infineon in the low-side configuration.

Figure 4 Schematic of generic driver stage for eMode GaN comprising Infineon’s isolated 1EDi driver.

The input side of the driver is supplied with 5 V and the isolated output is supplied with 12 V.

Figure 4 shows the principle of the driver stage. A rectangular ±6 V signal is provided from the output of a pulse

transformer thru TR1-sec- AC 1 and TR1-sec-AC 2. This produces an isolated voltage of 12 V by using the BAT54S

rectification diodes and the 10µF 25V capacitors.

The actual driving of the GaN is realized by splitting the +12 V into a positive and a negative contribution by

biasing the Kelvin source contact in the middle. Thus, a positive voltage of 6 V is used to control the turn-on,

whereas a -6 V voltage is available for safe turn-off. In practical terms, a +3.1 V value will result at the gate of the

HEMT during steady-state turn-on, whereas a -5.9 V value is applied during turn-off. The advantage of this

solution – compared to the classical RC drive (as shown in [3]) – is that the gate voltage of the GaN device is well

defined with respect to the negative driver voltage. Even at small duty-cycle values (with dominant off-times)

the voltage on the gate will not move toward 0 V – it will remain at -5.9 V and thus guarantee robustness against

the C dv/dt that is induced by gate turn-on.

The input side of the 1EDi driver is supplied with 5 V, which is the same voltage that is used by the CCM PFC

control IC. The isolated secondary side of the 1EDi driver is supplied by its own isolated 12 V domain (VCC2, pin 5

and GND2, pin 8 as shown in Figure 4) whereas the reference ground for the GaN transistor is conditioned to

TR1-sec-AC 2. This enables a well-defined positive output voltage during turn-on and also a well-defined

Application Note 7 Revision 1.1

05-11-2018

PFC demonstration platform

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

negative driver output voltage during the off-phase, as shown in Figure 5. This solution overcomes the

limitation of the time constant given by Rss*Cg as a negative level at the gate is always guaranteed by design.

Even if the off-time is longer than five times  (e.g. at small duty cycles or in pulse-skipping mode), the

capacitor will discharge toward the negative voltage level (-5.9 V) and not to 0 V. In this way it is guaranteed

that the signal-to-noise ratio on the gate is high and robustness against dv/dt-triggered events is assured.

Figure 5 Typical gate-source voltage characteristic with proposed gate drive at a load current of 16 A.

V2 shows the steady-state turn-on voltage (+3.1 V) and V1 shows the turn-off voltage (-5.9 V).

The driving of the CoolMOSTM devices is realized via separate turn-on and turn-off gate resistors. As the 33 mΩ

650 V CoolMOSTM C7 Gold devices are being turned on during the zero crossing of the AC input signal, the timing

is not critical. Thus, the turn-on gate resistor is chosen to be fairly high (390 Ω) to allow smooth turn-on

waveforms. The Kelvin contacts of the TOLL package are not required for the same reason. The turn-off resistor

is set to 4R7 (the standard configuration), which allows a fast turn-off. This is an additional safety measure

other than the dead-time to avoid cross-conduction under abnormal conditions. The nominal VGS voltage

during turn-on is approximately +13 V for the high-side transistor and +15 V for the low-side transistor

respectively.

Note: The gate-driving functionality can easily be monitored under LV conditions. For that purpose, supply 35 V DC

on the input of the PFC board. For debugging purposes, check the supply of the HV drivers on the primary

side (+5 V) and on the secondary side (+12 V) and the respective VGS signals under LV conditions.

Iprobe: coil current in L1

Vgs: voltage between gate and kelvin-source contact

Vds: voltage between drain and source contact

Zoom:

Zoom area

Application Note 8 Revision 1.1

05-11-2018

PFC demonstration platform

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

1.4 Layout considerations

The mainboard of the demo board is a four-layer PCB with a total thickness of 1.66 mm. The advantage of this

approach is that interlayer capacitances can be realized while having sufficient space for signal routing. The

complete layer stack is shown in Figure 6.

Figure 6 Layer stack of main PCB

One recommended way to minimize the voltage overshoots is to minimize the stray inductances along the

current path in the power loop. One possible way to achieve reasonably small overshoots with the DSO

packages is to minimize the area defined by the power-loop current. In practice, this means using the mid-

layers as a current return path to route the current back as close as possible to the forward path. This concept

is shown in Figure 7. The two layers are connected with vias.

Figure 7 Principle of the power-loop concept with GaN in the DSO package (cross-section, rotated)

Forward path of current

Return path of current

Application Note 9 Revision 1.1

05-11-2018

PFC demonstration platform

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

Figure 8 Layout of main PCB (bottom view) and indication of current path

1.5 Thermal concept

Efficient thermal management is a ongoing challenge in power electronic applications and is mostly contrary to

low-parasitic designs. The power components on this demo board are exclusively SMDs with high thermal

capabilities. The e-mode GaN power semiconductor is housed in a power DSO20 430 mil., which optimizes the

thermal path from the chip to the heatsink while balancing the parasitic elements in the power loop. The heat

generated in the GaN HEMT is transported through the PCB by thermal vias and dissipated by a common

heatsink on the opposite side side of the PCB (i.e. the top side). The PCB uses 276 standard through-hole vias

with a diameter of 0.6 mm and a drilling of 0.3 mm throughout the whole area of the heatslug provided by the

DSO package.

The temperature of the heatsink is monitored by a PT100 sensor and this information is used to control the

speed of the fan. We are currently using a Thermal Interface Material (TIM) from Bergquist or HALA to isolate the

PCB from the heatsink. This configuration is able to achieve an Rth,junction_to_heatsink of at least 5 K/W which allows a

maximum output power of 2500 W with just two GaN devices:

   

Figure 9 shows a thermal measurement of the demo board operating at full output power. The two rectangular

fields highlight the GaN power devices on the bottom side of the PCB that act as heat sources. The

measurement shows that the maximum device temperature is about 74°C. The maximum permitted junction

temperature of the power devices is 150°C. Consequently, the board could be operated at a higher ambient

temperature, e.g. in a closed-chassis or high-temperature environment. This temperature measurement was

performed at full load and the same conditions used for the efficiency measurement shown in Figure 25. The

input voltage was set to 230 Vrms and the ambient temperature in this laboratory set-up was approximately

25°C. The efficiency analysis was performed with a Yokogawa WT3000 precision power analyzer and the case

temperature was captured with a thermal camera from the FLIR A40 series.

Forward path of current

Return path

Application Note 10 Revision 1.1

05-11-2018

PFC demonstration platform

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

The CoolMOSTM chips are accommodated in a TOLL package, which perfectly fits the RDS(ON) requirements for the

phase-rectification half-bridge. Our full-SMD solution enables easier manufacturing as it reduces the manual

soldering steps in the production line.

Figure 9 Temperature measurement of GaN devices at full load (2500 W, 230 V AC input)

1.6 EMI filters

The PCB is equipped with a three-stage input filter on the input and a single-stage filter on the output to

suppress conducted disturbances. The concept of these filters is to suppress Common Mode (CM) and

Differential Mode (DM) noise on the interface of the board toward the AC source and the active load.

1.7 Auxiliary power supply

The auxiliary power supply for the generation of the voltages for the driving stages, the controller daughter

card and other auxiliary circuits is generated via a flyback circuit on a separate daughter card. The flyback itself

is realized with Infineon’s ICE2QR2280G – an integrated power-management IC with 800 V avalanche rugged

CoolMOS™, start-up cell and QR current-mode flyback PWM controller in a DSO-16/12 package. More

information about the ICE2QR2280G is available [4].

The circuit is supplied by the bulk voltage and generates the following output voltages:

 +15 V DC, non-isolated for driving the low-side 650 V CoolMOSTM C7 Gold

 +13 V DC, isolated for driving the high-side 650 V CoolMOSTM C7 Gold

 +5 V DC, isolated for the digital logic and the primary supply of the MOSFET drivers

Application Note 11 Revision 1.1

05-11-2018

PFC demonstration platform

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

Efficiency tests have shown that this flyback system runs at around 80 percent efficiency at 3 W output power.

The new ICE5 family of Infineon will increase the efficiency further. The product will become available soon.

Details will be available on our webpage [5] or by contacting your local sales office for more information.

If debugging of the functionality is required, we suggest supplying 35 V DC on the PFC input and measuring the

output signals of the auxiliary board at the interface to the mainboard.

Figure 10 The auxiliary supply daughter board

Figure 11 Schematic of the auxiliary supply daughter board

Application Note 12 Revision 1.1

05-11-2018

PFC demonstration platform

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

1.8 Control daughter boards

The control board represents the intelligence of the totem-pole PFC. The control is realized using an analog

controller that achieves a stable operation across the complete load range and reasonable PFC, as well as

handling of fault events. The analog control version shows the feasibility of having a standard PFC controller

operating in the full-bridge totem-pole PFC circuitry at 65 kHz.

The analog control is realized with Infineon’s ICE3PCS01G, which is a CCM PFC controller that is used for classic

PFC circuits comprising a CoolMOSTM switch and a SiC diode. Infineon’s latest CCM PFC controller was used due

to the very low Current Sensing (CS) input voltage (0.2 V). This minimizes shunt losses under critical-line

conditions. More information about the functionality and features of the ICE3 controller is available on our

webpage [6].

To satisfy the special requirements of the totem-pole PFC circuit, the behavior of the classic PFC controller has

been extended with additional logic gates. Thus, additional features such as the phase rectification of the low-

frequency half-bridge (switching with 50 Hz or 60 Hz respectively) can be supported. A photograph of the

analog control card is shown in Figure 12. The phase recification and the blanking of the PWM operation for the

GaN half-bridge were realized with digital gates on the “gate” output of the ICE3 control IC. The dead-time

settings are controlled with RC time constants and a comparator. The schematic is shown in Figure 13, with the

extended functionality highlighted in red.

Figure 12 Control card used in the full-bridge totem-pole PFC

Application Note 13 Revision 1.1

05-11-2018

PFC demonstration platform

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

Figure 13 Schematic of the ICE3-based control board with extra functionality required for the totem-

pole functionality.

1.8.1 Zero crossing detection

A simple V AC zero crossing circuit is used to provide the required signal to exchange the PWM signal between

the high-side and low-side switch over the sinusoidal grid input voltage.

1.8.2 VBULK sensing

As the signal ground is referenced to HB2 and not to VBULK, a differential sensing circuit must be used to provide

the VBULK voltage information to the PFC controller.

1.8.3 Switch, diode and synchronous sectification signal generation

This block, represented by all logic circuitry at the top of the schematics shown in Figure 13, is used to

accurately and correspondingly generate the switch and diode PWM signals from a single PFC gate signal for

efficient utilization of the GaN devices. The proper PWM signals to the high frequency devices, i.e. GaN, and the

low frequency ones, i.e. CoolMOS, depend on the grid voltage phase or semicycle.

1.8.4 Level shifter

This block is necessary to step down the 13 VDC voltage signal from the PFC controller to the necessary 5 VDC

level that logic circuitry needs to work properly.

Application Note 14 Revision 1.1

05-11-2018

PFC demonstration platform

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

1.8.5 Zero current turn off and zero window comparator

This circuit prevents the PWM signal from being applied to the power switches for approximately 100 μs during

a zero crossing of the grid voltage to maintain exchange of the high-side and low-side PWM signals. This leads

to elimination of possible cross-conduction in the half-bridge configuration.

1.8.6 True DCM monitor / enabler

As the ICE3PCS01G controller is originally designed for a classic or traditional PFC topology where a MOSFET is

switching against a SiC Shottky diode, in order to fit this controller to the CCM Totem Pole topology, a fast

comparator is needed to prevent a negative current flow in the PFC choke during DCM operation.

1.8.7 Current sensing approach

A cost effective and simple approach to do the current sensing for the oper control is depicted in Figure 14

Figure 14 Reference point and active current sensing resistor according to the input voltage semi-cycle

as well as voltage waveform that works as reference for the PFC controller.

As GND_iso is referenced to HB2 and not to VBULK, a differential rectification sensing circuit must be used to

provide the V AC voltage to the PFC controller.

Application Note 15 Revision 1.1

05-11-2018

Getting started with the hardware

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

2 Getting started with the hardware

This section describes how to use the hardware successfully for lab evaluations. Figure 15 shows the different

sub-blocks of the demo board.

The auxiliary supply and the PFC control logic are on daughter boards that are connected to the PFC main

board. This allows the user to exchange the daughter boards to perform a deeper investigation with (for

example) a customized auxiliary supply or an external laboratory power supply.

This demo board is supplied with an analog controller board (Infineon ICE3 PFC controller) on a daughter

board. This means that the controller could be easily replaced with another version once another version

becomes available (e.g. a digital version).

Figure 16 shows a detailed view of the two different daughter boards that are connected to the main board.

Figure 15 Top view of PCB with block description

Figure 16 Detailed side view of the controller and auxiliary supply daughter cards

2.1 Basic wiring and connections

Figure 17 shows the principle of the power signal wiring. The AC inputs are shown in blue. The DC outputs are

shown in red and black. Attention must be paid to the correct polarity of the DC output signal: the red signal

indicates the positive terminal (+) whereas the negative terminal is marked black (-). The corresponding

terminals are also marked directly on the bottom side of the PCB. Furthermore, Figure 19 shows the

recommended wiring of the power signals. These are the minimum connections that are needed to start up the

Controller board

Aux-supply board

30 A fuse

Inrush management

EMI filter

Daughter cards

Output EMI filter

DC link buffering

Heatsink

Main inductor

Input EMI filters

Application Note 16 Revision 1.1

05-11-2018

Getting started with the hardware

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

hardware. Additional wiring is not required; all of the electronics are supplied via the AC input. Now, the set-up

is fully functional and ready to perform efficiency investigations.

Figure 17 Top view of PCB with power input and output signals

Figure 18 Laboratory wiring of the power signals

Figure 19 Laboratory wiring of the power signals – top view

Application Note 17 Revision 1.1

05-11-2018

Getting started with the hardware

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

Figure 20 Wiring with force and sense wires for accurate efficiency measurements

The input current (IL) can be measured with a standard current probe. It is recommended to use the wire of the

current inductor to perform this task. Figure 21 shows a photograph of this measurement set-up. A current

probe that is able to handle the currents up to 40 A is recommended.

Figure 21 Probing of the inductor current with current probe

Figure 22 shows the recommended way of probing a voltage signal. In this example the VDS voltage across the

GaN switch is measured on the low-side of the high frequency half-bridge. The same technique could be

applied to measure other signals such as the gate-source voltage provided that the same reference ground is

used. If additional measurements are required that cannot be referred to the common ground, it is

recommended to use differential voltage probes (for example, to measure the AC input voltage). Probes that

meet the required voltage specifications (1000 V) are recommended.

For passive, ground-related probing it is recommended to connect the probe holder as close as possible to the

leads of the package and to connect the ground of each probe. It is advantageous to use the central ground

connection of the oscilloscope to obtain best results. Figure 22 shows the use of probe holders to measure VDS

on the low-side CoolGaN™ switch.

Application Note 18 Revision 1.1

05-11-2018

Getting started with the hardware

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

Figure 22 Probing of the VDS signal on the low-side GaN switch with a passive probe and a probe holder

directly soldered to the PCB

The demo board is equipped with a regulated fan on the heatsink. The fan is supplied with 12 V DC. The fan

speed is controlled via a PWM signal generated by the on-board logic and a temperature sensor that is placed

close to the CoolGaN™ switch. The fan could also be supplied externally if closed-loop operation is not

required. Figure 23 shows how the fan could be supplied via an external power supply. The cables supplying the

fan are simply unplugged from the main board and connected to an external supply. The red cable indicates

the positive polarity, whereas the black color marks the negative polarity. The yellow cable (PWM input) is

intentionally not connected. Thus, the fan is controlled by the externally supplied voltage only. 12 V DC

translates to full fan speed.

Figure 23 Fan supply with external laboratory voltage source for efficiency measurements. The supply

voltage of the fan is set to 12 V DC.

2.2 Start-up procedure

Each board has been tested for full functionality after production (see attached test report).

The recommended way of starting up is to connect all of the necessary cables, as well as the external

laboratory-grade source and electronic load. Set the electronic load to constant current mode and program a

sink current of 100 mA. Set the AC source to an input voltage of 10 Vrms and increase the AC voltage slightly. The

PFC will start operating at an input voltage of approximately 85 Vrms. The output voltage will become 390 V DC

(nominal) once the PFC is in operation. Additionally, a current measurement can be performed. The current will

change to a sinusoidal envelope when once the switches start operating. If this state is reached, the output

power can be varied by setting the load point on the electronic load (any load jump is allowed within the

specified output power range). Refer to Figure 24 to determine the maximum permissable output power as a

function of the input voltage. The absolute maximum power is 2500 W at a minimum input voltage of 180 Vrms.

Application Note 19 Revision 1.1

05-11-2018

Getting started with the hardware

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

For the minimum input voltage (85 Vrms) do not exceed 1000 W (40 percent derating of the maximum output

power as shown in Figure 24).

It is recommended to connect the fan to an external 12 V laboratory-grade power supply and to monitor the

temperature of the power devices during efficiency tests or long-term operation (longer than 1 hour).

Start-up at full-load conditions is not recommended.

2.2.1 AC input voltage requirements

The evaluation board is able to operate at input voltages from 85 to 265 Vrms. All tests were performed with a

dedicated laboratory-grade AC voltage source on the input. The PFC stage supports AC mains frequencies of 50

and 60 Hz.

Although the hardware is built as close as possible to real application conditions, direct connection to the AC

mains is not recommended. Use dedicated laboratory voltage sources instead.

Note: The start-up threshold of the PFC board is 85 V nominal. If the input voltage is below this, the boost operation

will not begin and the DC link voltage will not be 390 V. Nevertheless, the basic functionality of the gate

drivers and the controller can be debugged with only 35 V DC on the input.

Figure 24 Recommended derating of output power vs input voltage at 50°C

2.2.2 DC output voltage

The nominal output voltage of the converter is set to 390 V. This voltage is achieved throughout the wide range

input and over all load conditions. The power stage controller will adapt the PWM signal accordingly if a line

jump on the input or a load jump on the output occurs within the specified operating points (see Figure 34).

It is recommended to use electronic loads at the output. The load must be capable of handling the voltages

present and the maximum output power of 2500 W. All tests were performed with the load operating in either

constant current or constant power mode as the PFC controller is able to maintain the output voltage at the

nominal output voltage of 390 V.

As mentioned in Chapter 2.2, start-up has to be performed at no-load conditions, meaning that the electronic

load at the output has to sink a small current of 100 mA or be off when the input voltage is applied to the PFC.

500

1 000

1 500

2 000

2 500

85 110 135 160 185 210 235 260

Max. output power in W

Input voltage in Vrms

Output power vs input voltage

at less than 50°C

Application Note 20 Revision 1.1

05-11-2018

Measurement results

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

3 Measurement results

This section provides an overview of typical measurement results. All results were measured in laboratory

conditions at an ambient temperature of 25°C.

3.1 Efficiency measurement

The concept of this demo board is to show that Infineon’s GaN in combination with the best-in-class 650 V

CoolMOSTM C7 Gold can push the efficiency above 99 percent. Figure 25 shows the measured efficiency curve.

The red line shows the complete system efficiency, measured at the AC input and the DC output of the

converter. All power losses present in the application (the auxiliary supply, the cooling fan, the control logic,

the fuse, the cable contact resistances and the losses of the EMI filters) are included in the efficiency graph in

Figure 25.

The efficiency curve in Figure 25 was obtained at an input voltage of 230 Vrms and at an ambient temperature of

25°C by using sense contacts connected to the equipment (four-wire measurement). The proposed cabling set-

up is shown in Figure 17. The evaluation of the efficiency was performed with a Yokogawa WT3000 precision

power analyzer as shown in Figure 25.

Figure 25 PFC efficiency vs output power at Vin = 230 Vrms. The measured peak efficiency is 99.2 percent

at 1 kW output power.

3.2 Gate signal measurements

Figure 30 shows a typical VGS while operating in high-load CCM operation. In the off-state VGS is approximately -6

V, whereas the voltage in the on-state reaches approximately 3.2 V. Further details are given in Figure 27, where

a turn-off event of the HEMT is shown. This figure shows a remarkable linear VDS slope, rising in about 10 ns

from the on-state to the DC link voltage – caused by the almost linear Coss behavior of the GaN. The maximum

voltage peak is 480 V, which is within the recommended derating target of 80 percent of VDS,max.

96,5%

97,0%

97,5%

98,0%

98,5%

99,0%

99,5%

0 250 500 750 1000 1250 1500 1750 2000 2250 2500

System efficiency (%)

Output power (W)

Application Note 21 Revision 1.1

05-11-2018

Measurement results

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

Figure 26 PFC operating in CCM mode at an average current of 17.86 A. The yellow curve shows the VGS

signal. The cursor position measures the steady-state VGS in the on- and off-states. The blue

curve shows VDS measured on the low-side CoolGaNTM switch. The magenta curve is the

current measured in the main PFC inductor.

Iprobe: coil current in L1

VGS: voltage between gate and Kelvin source contact

VDS: voltage between drain-and-source contact

Application Note 22 Revision 1.1

05-11-2018

Measurement results

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

Figure 27 Typical PFC waveforms in CCM mode operation at turn-on of the low-side GaN HEMT. The

magenta line represents the inductor current, the blue curve VDS and the yellow curve shows

the VGS signal. The dip on the VGS signal is caused by the fast dv/dt of VDS and the finite CMRR of

the voltage probe. This presents no risk to operation.

Iprobe: coil current in L1

Vgs: voltage between gate and kelvin-source contact

Vds: voltage between drain and source contact

Application Note 23 Revision 1.1

05-11-2018

Measurement results

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

Figure 28 Typical PFC waveforms in CCM mode operation. The magenta line represents the inductor

current, the blue curve VDS and the yellow curve shows the VGS signal. The spike of the VGS

signal is a measurement artifact caused by the fast transition of VDS and the limited CMRR of

the voltage probe.

Iprobe: coil current in L1

Vgs: voltage between gate and kelvin-source contact

Vds: voltage between drain and source contact

Application Note 24 Revision 1.1

05-11-2018

Measurement results

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

Figure 29 The zoom on the yellow waveform (VGS) reveals the dead-time settings (approximately 90 ns).

This value was chosen to minimize the time when the CoolGaNTM HEMT is inactively

conducting (VGS is below the threshold, but the channel conducts in reverse similar to a body-

diode) and to maximize the active freewheeling time (VGS is greater than VTH and the channel

is actively driven on).

3.3 Start-up

Figure 30 shows start-up of the PFC with a minimum load of 300 mA. The blue curve shows the DC link voltage

on the output whereas the orange curve represents the input current. As shown, the maximum inrush current is

8 A at 230 Vrms and 35.4 A at 90 Vrms. The complete start-up procedure takes less than 500 ms.

Iprobe: coil current in L1

Vgs: voltage between gate and kelvin-source contact

Vds: voltage between drain and source contact

Application Note 25 Revision 1.1

05-11-2018

Measurement results

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

Figure 30 Start-up of PFC at 230 Vrms without load current. The blue curve represents VDS voltage, the

magenta curve shows the input current, the green curve shows the DC link voltage and the

yellow curve shows VGS voltage of the GaN HEMT. The measured peak input current is 7.9 A.

Iprobe: coil current in L1

VGS: voltage between gate and Kelvin source contact

VDS: voltage between drain-and-source contact

VBULK: voltage measured on the PFC output

Application Note 26 Revision 1.1

05-11-2018

Measurement results

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

Figure 31 Start-up of PFC at 90 Vrms without load current. The blue curve represents the VDS voltage, the

magenta curve shows the input current, the green curve shows the DC-link voltage and the

yellow curve shows the VGS voltage of the GaN HEMT. The measured peak input current is 35.4

Iprobe: coil current in L1

Vgs: voltage between gate and kelvin-source contact

Vds: voltage between drain and source contact

Vbulk: voltage measured on the PFC output

Application Note 27 Revision 1.1

05-11-2018

Measurement results

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

Figure 32 Continuous operation within tolerance conditions (Vin = 176 Vrms, blue curve); orange curve

shows the input current; output power is 2500 W.

V AC: voltage on the input of the PFC

Iin: input current

Voltage (V)

Current (A)

Application Note 28 Revision 1.1

05-11-2018

Measurement results

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

Figure 33 Continuous operation at nominal conditions (Vin = 230 Vrms); the output power is 500 W. The

blue curve represents VDS, the magenta curve shows the input current, the green curve shows

the supply voltage of the 1EDi drivers on the secondary side and the yellow curve shows VGS

voltage of the GaN HEMT.

Iprobe: coil current in L1

VGS: voltage between gate and Kelvin source contact

VDS: voltage between drain and source contact

VCC2: secondary supply voltage of the 1EDi drivers

Application Note 29 Revision 1.1

05-11-2018

Measurement results

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

3.4 AC-line cycle drop-out test

Several drop-out tests of the AC input show the robustness of the demo board against power line disturbances.

Figure 34 shows a severe loss of the AC input voltage for 20 ms and the subsequent recovery of the DC link

voltage.

Figure 34 Measurement result of a 20 ms AC-line cycle drop-out test. The result shows that the demo

board can handle this severe line disturbance and recover to full operation in less than 65 ms.

V AC: voltage on the input of the PFC

Iin: input current

V DC: output voltage of PFC

Voltage (V)

Current (A)

Application Note 30 Revision 1.1

05-11-2018

Measurement results

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

3.5 Load steps

The PFC demo board can handle load transients from 0 to 100 percent, as shown in Figure 34.

Figure 35 Measurement result of load step from 0 to 100 percent load. The inductor current peaks at

approximately 28 A, and the output voltage recovers in about 40 ms. Maximum bus voltage

deviation is -60 V.

3.6 EMI measurement result

An EMI test has been performed as well as the efficiency and PLC tests. The results in Figure 36 show the

conducted EMI at full load and nominal input voltage. The test was performed in a certified Infineon EMI

laboratory.

Application Note 31 Revision 1.1

05-11-2018

Measurement results

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

Figure 36 Conducted EMI measurement result showing a pass of the EN 55022 standard

Application Note 32 Revision 1.1

05-11-2018

Specifications

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

4 Specifications

Note: All ratings are specified for lab conditions and an ambient temperature of 25°C.

− Vin = 85 Vrms to 265 Vrms

− Pout = 0 W to 2500 W

− fsw = 65 kHz

− tambient = 25°C

− Vout,nom = 390 V DC

− Vout, min = 340 V DC

− Vout,max = 440 V DC

Note: Derate output power for lower input voltage according to Figure 24.

Application Note 33 Revision 1.1

05-11-2018

Addendum

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

5 Addendum

5.1 Schematics of the main board

Figure 37 CCM totem pole PFC topology power section

Application Note 34 Revision 1.1

05-11-2018

Addendum

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

Figure 38 EMI filter and protections as well as heat sink temperature control

Application Note 35 Revision 1.1

05-11-2018

Addendum

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

5.1 Schematics of the auxiliary supply daughter board

Figure 39 Auxiliary suppy

Application Note 36 Revision 1.1

05-11-2018

Addendum

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

5.2 Schematics of the control board

Figure 40 Control circuitry

Application Note 37 Revision 1.1

05-11-2018

Addendum

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

5.3 Bill of Materials (BOM)

5.3.1 Main board

Part

Value

QTY

Voltage

Package

Description

Manufacturer

Supplier

Part number

C25, C26

100 nF

630 V

CAP1808R

Ceramic capacitor

Mouser

80-

C1808C104KBRACTU

C27, C28

100 nF

630 V

CAP1812R

Ceramic capacitor

Farnell

1838753

C1, C2, C6

4n7

300 V

C foil

capacitor 10

mm grid

Foil capacitor

Farnell

1166531

C12, C19

10 nF

50 V

CAP0805-IFX

Ceramic capacitor

AVX

Farnell

1740669

C16, C33

3n3

500 V

CAP0805-IFX

Ceramic capacitor

KEMET

Farnell

1702127

C9, C10

560 µF

450 V

C aluminum

electrolytic 10

Electrolytic capacitor

Panasonic

Electronic

Components

Digi-Key

P14904-ND

D1, D2

D_P600

Diode

Vishay General

Semiconductor

Farnell

1702801

NTC1, NTC2

14 R

R_SL22

NTC resistor

Ametherm

Digi-Key

570-1039-ND

R8, R12

0R008

RES1206R

Resistor

Welwyn

Farnell

1621974RL

C43

150 µF

16 V

CAP

Panasonic SP-

Cap

Ceramic capacitor

Farnell

2354978

4n7

300 V

C foil

capacitor 10

mm grid

Foil capacitor

Farnell

1166531

D11

RSFJL

SMA_SUB

Diode

Farnell

1559145RL

BAT165

SOD323

Schottky diode

Infineon

Technologies

Farnell

1056502

IC3

SN74LVC

2G14

SOT23-6

Dual Schmitt trigger

inverter

Texas Instruments

Digi-Key

296-13010-2-ND

IC7

TC648

SOIC8

TC648 fan controller IC

Microchip

Digi-Key

TC648BEUA-ND

REL1

Relay

OMRON

G5LE-1E

12DC

REL_G5LE-1E

12DC

Relay OMRON G5LE-1E

12DC

Farnell

1333642

C11, C20, C22,

C30, C34, C36

10 µF

25 V

CAP0805-IFX

Ceramic capacitor

C13, C14, C18,

C31, C32, C35

100 nF

25 V

CAP0805-IFX

Ceramic capacitor

C15, C24

1 µF

25 V

CAP0805-IFX

Ceramic capacitor

C17

10 uF

25 V

CAP0805-IFX

Ceramic capacitor

C21, C29, C37,

C38

10 pF

50 V

CAP0805-IFX

Ceramic capacitor

C23, C42

1 nF

50 V

CAP0805-IFX

Ceramic capacitor

C3, C8

1 µF

305 V AC

C foil 22.5 mm

Foil capacitor

Mouser

871-B32923C3105M

1 µF

305 V AC

C foil 22.5 mm

Foil capacitor

Mouser

871-B32923C3105M

C44

1 µF

25 V

CAP0805-IFX

Ceramic capacitor

3.3 µF

305 V AC

C foil 27.5 mm

Foil capacitor

Mouser

871-B32924E3335M

D3, D6

BAT54-04

SOT23R

Dual small-signal

Schottky diodes

Infineon

Technologies

Mouser

771-BAT54S-T/R

Fuse

holder

250 V AC

Fuse holder 5

x 20

Fuse holder – 22 mm x

9 mm for a 5 mm x 20

mm fuse

Mouser

693-0031.8201

IC1, IC5

1EDI20N

12AF

SO8

2 A single-channel

MOSFET

gate-driver IC

Infineon

Technologies

Infineon

Technologies

1EDI20N12AF

Application Note 38 Revision 1.1

05-11-2018

Addendum

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

IC2

2EDN752

SOIC127P600X

175-8N-2

5 A dual-channel low-

side HV MOSFET driver

Infineon

Technologies

Infineon

Technologies

2EDN7524F

IC4, IC6

1EDI60N

12AF

SO8

6 A single-channel

MOSFET gate-driver IC

Infineon

Technologies

Infineon

Technologies

1EDI60N12AF

NTC3

100 k

PTC 0805

NTC resistor

EPCOS

Mouser

871-B57471V2104J62

R1, R13

680 R

RES0805-IFX

Resistor

R10

33 k

RES0805-IFX

Resistor

R11

47 k

RES0805-IFX

Resistor

R2, R5, R14, R17

2 R

RES0805-IFX

Resistor

R29

27 k

RES0805-IFX

Resistor

R3, R4, R9, R15,

R16, R19, R24

390 R

RES0805-IFX

Resistor

R31

7k5

RES0805-IFX

Resistor

R32

15 k

RES0805-IFX

Resistor

3k3

RES0805-IFX

Resistor

R7, R18

4R7

RES0805-IFX

Resistor

T1, T2

IGO60R0

70D1

P/PG-DSO-20

600 V GaN power

transistor 70 mΩ

Infineon

Technologies

Infineon

Technologies

T3, T4

IPT65R03

3G7

HSOF-8-2

n-MOSFET with source

sense

Infineon

Technologies

Infineon

Technologies

IPT65R033C7

Fuse

15 A 250

V T

250 V AC

5 mm x 20 mm

Anti-surge T LBC min

fuse, 15 A 5 x 20 mm

RS Components

541-4599

Magnetics:

650 µH

Inductor

AmoFlux – V2

Inductor

ICE Transformers

8024.3301.028

TR1

Transformer

Ferroxcube

Pulse transformer

ICE Transformers

8034.0103.014

L2, L3

1 mH

Inductor WE-

CMBNC

THT CM power line

choke, WE-CMB, L =

1.00 mH

Würth Elektronik

eiSos GmbH

Farnell

1636292

1 mH

Inductor WE-

CMB L

THT CM power line

choke, WE-CMB, L =

1.00 mH

Würth Elektronik

eiSos GmbH

Farnell

1636292

22 µH

Inductor

Bourns 2305-

V-RC

Inductor

Bourns Inc.

Digi-Key

M8881-ND

Mechanical:

Fischer

Elektroni

k LAM4

40mm x

40 mm x

50 mm

with 12 V

DC fan

(ebmpap

st 412

JHH)

Heatsink

Fischer

Elektronik

Heatsink with

integrated 12 V fan

Fischer Elektronik

Pin header 3c

single –

vertical

Pin header, three

contacts, 2.54 mm

S1, S2

Do not assemble!

Application Note 39 Revision 1.1

05-11-2018

Addendum

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

S7, S8, S9, S10,

S11, S12

screws

Hex socket button

steel-bright zinc-

plated socket screw,

M3 x 10 mm for

heatsink mounting,

add M3 metal washers

between screws and

PCB

RS Components

483-9559

S3, S4, S5

spacers

Spacer bottom: HTSN-

M3-15-6-1, 15 mm high

nylon-threaded hex

spacer 6 mm wide for

M3 thread spacers top:

two pieces of “HTSN-

M3-25-6-2, 25 mm high

nylon-threaded hex

spacer 6 mm wide with

8 mm bolt length for

M3 thread” connected

to achieve an overall

stand-off of 50 mm

RS Components

102-6378

102-6542

spacers

Spacer bottom: HTSN-

M3-15-6-1, 15 mm high

nylon-threaded hex

spacer 6 mm wide for

M3 thread spacer top:

2x “HTSN-M3-10-6-2,

10 mm high nylon-

threaded hex spacer 6

mm wide with 8 mm

bolt length for M3

thread”

RS Components

102-6378

102-6508

Insulation

material

Sil-PAD

1500ST

Foil

Self-adhesive

fiberglass thermal gap

pad, 1.8 W/m·K, 10 x 12

Bergquist

RS Components

127-063

5.3.1 Auxillary supply daughter board

Designator

value

QTY

Tolerance

Voltage

Footprint

Description

Manufacturer

Supplier 1

Supplier Part Number 1

C100, C101,

C102, C106,

C107, C108,

C112, C113,

C117

10µF

±1%

25V

CAP0805-

IFX

Capacitor Ceramic

C103, C109

270uF

±1%

16V

C_POL_SM

D_6.3

Capacitor Electrolyt

Panasonic,

Panasonic

Electronic

Components

Mouser,

Digi-Key

667-16SVPG270M,

PCE5081CT-ND

C104

100nF

±1%

630V

CAP1812R

Capacitor Ceramic

AVX

Farnell

1838753

C105

220pF

±1%

500V

CAP1206R

Capacitor Ceramic

AVX

Farnell

1216450

C110, C115

1nF

±1%

50V

CAP0805-

IFX

Capacitor Ceramic

C111

22nF

±1%

50V

CAP0805-

IFX

Capacitor Ceramic

C114

100pF

±1%

50V

CAP0805-

IFX

Capacitor Ceramic

D100, D101,

D102

SMB / DO-

214AA

Diode

FAIRCHILD

SEMICONDUCT

Farnell

1467491

D103

SMA_SUB

Diode

TAIWAN

SEMICONDUCT

Farnell

1559145RL

D104

BAT165

SOD323

Schottky-Diode

Infineon

Technologies

Mouser

726-BAT165E6327

IC100

ICE2QR2280G

PG-DSO-12

CoolSET® - Q1

Infineon

Technologies

Mouser

726-

ICE2QR2280GXUMA1

IC101

TL431

SOT23R

TL431- Adjustable

Precision Shunt

Regulator

Texas

Instruments

Digi-Key

296-17328-2-ND

R100, R101

68k

±1%

RES1206R

Resistor

R102

15k

±1%

RES0805-

IFX

Resistor

Application Note 40 Revision 1.1

05-11-2018

Addendum

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

R103

1R5

±1%

RES1206R

Resistor

R104, R107,

R109

±1%

RES0805-

IFX

Resistor

R105, R110

8k45

±1%

RES0805-

IFX

Resistor

R106

68R

±1%

RES0805-

IFX

Resistor

R108

2k7

±1%

RES0805-

IFX

Resistor

TF100

FLYBACK_2P_1S_

EE16-8PIN

EE16 THT

Bobbin

Magentic

ICEtransformer

ICEtransfor

mers

8032.0205.012

U100

TLE4264-2G

SOT-223-4

5 V Low Drop Fixed

Voltage Regulator, 5.5

to 45 V Supply, -40 to

150 degC, PG-SOT223

(SC-73), Reel, Green

Infineon

Technologies

Mouser

726-TLE42642GHTSA2

U101

Optocoupler

DIL-4-SMD

Optocoupler

Vishay

Semiconductor

Opto Division

Digi-Key

VO618A-3X017TCT-ND

X100, X101

Pin Header 5

contacts

PIN Header

5C Single-

2mm - THT

SAMTEC TMM-105-01-

L-S-RA Board-To-

Board Connector,

Right Angle

(abgewinkelt), TMM

Series, Through Hole,

Header, 5, 2 mm

SAMTEC

Farnell

1803413

5.3.2 Controller daughter board

Designator

value

QTY

Tolerance

Voltage

Footprint

Description

Manufacturer

Supplier

Supplier Part

Number 1

C200, C203,

C205, C210,

C213, C214,

C219, C223

1uF

±1%

25V

CAP0805-

IFX

Capacitor ceramic

C201, C212

470pF

±1%

50V

CAP0805-

IFX

Capacitor ceramic

C202, C204,

C206, C217

33pF

±1%

50V

CAP0805-

IFX

Capacitor ceramic

C207

150pF

±1%

25V

CAP0805-

IFX

Capacitor ceramic

C208

68pF

±1%

25V

CAP0805-

IFX

Capacitor ceramic

C209, C224

10nF

±1%

50V

CAP0805-

IFX

Capacitor ceramic

C211

6.8nF

±1%

50V

CAP0805-

IFX

Capacitor ceramic

C215, C218, C221

100nF

±1%

25V

CAP0805-

IFX

Capacitor ceramic

C216

10uF

±1%

25V

CAP0805-

IFX

Capacitor ceramic

C220

470nF

±1%

25V

CAP0805-

IFX

Capacitor ceramic

C222

10pF

±1%

50V

CAP0805-

Capacitor ceramic

Application Note 41 Revision 1.1

05-11-2018

Addendum

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

IFX

D200, D201

SMA_SUB

Diode

TAIWAN

SEMICONDU

CTOR

Farnell

1559145RL

D202

Bat54C

SOT23_N

Infineon

Technologie

Mouser

726-BAT54E6327

D203, D205

BAT165

SOD323

Schottky diode

Infineon

Technologie

Mouser

726-BAT165E6327

D204

4.7V

SOD323

Zener diode

ROHM

Farnell

1680099RL

IC200

SOT23-6

Low voltage, precision

comparator with push-pull

output

TEXAS

INSTRUMEN

Farnell

2147763

IC201

SN74AC32PW

SO14 -

wide

TEXAS INSTRUMENTS -

SN74AC32PW - LOGIK

QUAD 2IN POS-ODER GATE

14TSSOP

Texas

Instruments

Digi-Key

296-33645-5-ND

IC202

ICE3PCS01G

PG-DSO-

CCM_PFC_Controller_Stan

dalone

Infineon

Technologie

Mouser

ICE3PCS01GXUMA1

IC203, IC205

SN74AC08PW

SO14 -

wide

TEXAS INSTRUMENTS -

SN74AC08PW -

LOGIK,QUAD 2IN POS-UND

GATE,14TSSOP

Texas

Instruments

Mouser

595-SN74AC08PW

IC204

LT1013DDG4

SO8

TEXAS INSTRUMENTS -

LT1013DDG4 - OP

AMP,DUAL PRAEZISION,

1013, SOIC8

TEXAS

INSTRUMEN

Farnell

9589759

IC206

LM293AD

SO8

TEXAS INSTRUMENTS -

LM293AD - KOMPARATOR

DUAL,SMD SOIC8, 293

Texas

Instruments

Digi-Key

296-26090-1-ND

IC207

SO14 -

wide

TEXAS INSTRUMENTS -

SN74AC04PW - LOGIK, HEX

INVERTER, 14TSSOP

TEXAS

INSTRUMEN

Farnell

1741166

R200

510R

±1%

RES0805-

IFX

Resistor

R201, R221, R222

5.1k

±1%

RES0805-

IFX

Resistor

R202

500k

±1%

RES0805-

IFX

Resistor

R203, R204,

R205, R209,

R210, R211,

R212, R213,

R214, R216,

R218, R227,

R228, R229,

R232, R233

1MOhm

±1%

RES0805-

IFX

Resistor

Application Note 42 Revision 1.1

05-11-2018

Addendum

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

R206, R226, R231

510R

±1%

RES0805-

IFX

Resistor

R207, R208,

R215, R217, R219

1MOhm

±1%

RES0805-

IFX

Resistor

R220, R235

25k5

±1%

RES0805-

IFX

Resistor

Vishay / Dale

Mouser

71-CRCW0805-

25.5K-E3

R223

10kOhm

±1%

RES0805-

IFX

Resistor

R224, R225, R242

±1%

RES0805-

IFX

Resistor

R230

68.2k

±1%

RES0805-

IFX

Resistor

R234, R236

200kOhm

±1%

RES0805-

IFX

Resistor

R237

330kOhm

±1%

RES0805-

IFX

Resistor

R238

68kOhm

±1%

RES0805-

IFX

Resistor

R239, R240

100k

±1%

RES0805-

IFX

Resistor

R241

30.1kOhm

±1%

RES0805-

IFX

Resistor

VISHAY

DRALORIC

Farnell

1652981

R243

3.9MOhm

±1%

RES0805-

IFX

Resistor

R244

47k

±1%

RES0805-

IFX

Resistor

R245

150kOhm

±1%

RES0805-

IFX

Resistor

T200, T201

BSS138N

SOT-23-3

NMOS FET

Infineon

Technologie

Mouser

726-

BSS138NH6327

X200, X201, X202

Header 5C

Single-

2mm -

THT

SAMTEC TMM-105-01-L-S-

RA Board-To-Board

Connector, Right Angle

(abgewinkelt), TMM Series,

Through Hole, Header, 5, 2

SAMTEC

Farnell

1803413

5.4 Abbreviations

SMPS

Switched Mode Power Supply

PFC

Power Factor Correction

Application Note 43 Revision 1.1

05-11-2018

Addendum

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

High Voltage

MOSFET

Metal Oxide Semiconductor Field Effect Transistor

GaN

Gallium nitride

CCM PFC

Continuous Current Mode Power Factor Correction

RDS(ON)

Drain source on-state resistance

Vin

Input voltage

Vout

Output voltage

Pout

Output power

fsw

Switching frequency

tambient

Ambient temperature

EMI

Electro-Magnetic Interference

Current Sense

HB1

Half-Bridge point 1 (boost stage)

HB2

Half-Bridge point 2 (synchronous grid rectification)

VBULK+

Bulk voltage positive rail

VBULK-

Bulk voltage negative rail

PTC

Positive Temperature Coefficient

ISO

Isolated

GND

Ground

Low-Side

High-Side

n.c.

Not Connected

VCS

Voltage on current sense

Rshunt

Resistive shunt for current sensing

DSP

Digital Signal Processor

PWM

Pulse Width Modulated

QR flyback

Quasi Resonant flyback

DCM

Discontinuous Current Mode

Rth

Thermal resistance

SMD

Surface Mount Device

PCB

Printed Circuit Board

TIM

Thermal Interface Material/Thermal Insulation Material

CMRR

Common Mode Rejection Ratio

ACLCDO

AC-Line Cycle Drop-Out

Application Note 44 Revision 1.1

05-11-2018

References

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

6 References

[1] http://www.infineon.com/dgdl/Infineon-ProductBrochure_CoolMOS_Benefits_in_Hard_Soft_Switching-BC-

v06_16-EN.pdf?fileId=db3a3043338c8ac80133aca62ba63047

[2] http://www.infineon.com/dgdl/Infineon-IPT65R033G7-DS-v02_01-

EN.pdf?fileId=5546d46253f650570154190220f14f1f

[3] Driving 600 V CoolGaN™ high electron mobility transistors

[4] http://www.infineon.com/cms/en/product/power/ac-dc-power-conversion/ac-dc-integrated-power-stage-

coolset/ac-dc-quasi-resonant-

coolset/ICE2QR2280G/productType.html?productType=db3a304425afcf6a01262c7b5952385b

[5] http://www.infineon.com/cms/en/product/power/ac-dc-power-

conversion/channel.html?channel=5546d4624d6fc3d5014d9f3987485627

[6] http://www.infineon.com/cms/en/product/power/ac-dc-power-conversion/ac-dc-pwm-pfc-controller/pfc-

ccm-continuous-conduction-mode-

ic/ICE3PCS01G/productType.html?productType=db3a304329a0f6ee0129a67b7e462b48

Application Note 45 Revision 1.1

05-11-2018

Revision history

2500 W full-bridge totem-pole power factor correction using

CoolGaN™

7 Revision history

Major changes since the last revision

Page or reference

Description of change

Rev 1.1

Modified first page, corrected product name of GaN HEMT in BOM, added more

information about current sensing concept, added BOM of daughter cards, added more

description about control daughter card

Other Trademarks

All referenced product or service names and trademarks are the property of their respective owners.

AN_201702_PL52_011owners.

Edition 05-11-2018

AN_201702_PL52_011

Published by

Infineon Technologies AG

81726 Munich, Germany

Do you have a question about this

document?

Email: erratum@infineon.com

Document reference

IMPORTANT NOTICE

The information contained in this application note

is given as a hint for the implementation of the

product only and shall in no event be regarded as a

description or warranty of a certain functionality,

condition or quality of the product. Before

implementation of the product, the recipient of this

application note must verify any function and other

technical information given herein in the real

application. Infineon Technologies hereby

disclaims any and all warranties and liabilities of

any kind (including without limitation warranties of

non-infringement of intellectual property rights of

any third party) with respect to any and all

information given in this application note.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

respect to such application.

For further information on the product, technology,

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contact your nearest Infineon Technologies office

(www.infineon.com).

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the types in question please contact your nearest

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