BSP 92 SIPMOS (R) Small-Signal Transistor * P channel * Enhancement mode * Logic Level * VGS(th) = -0.8...-2.0 V Pin 1 G Pin 2 D Type VDS ID RDS(on) Package Marking BSP 92 -240 V -0.2 A 20 SOT-223 BSP 92 Type BSP 92 Ordering Code Q62702-S653 Pin 3 Pin 4 S D Tape and Reel Information E6327 Maximum Ratings Parameter Symbol Drain source voltage VDS Drain-gate voltage V Values -240 V DGR RGS = 20 k -240 Gate source voltage VGS 20 Gate-source peak voltage,aperiodic Vgs Continuous drain current ID TA = 35 C A -0.2 DC drain current, pulsed IDpuls TA = 25 C -0.8 Power dissipation W Ptot TA = 25 C Data Sheet Unit 1.7 1 05.99 BSP 92 Maximum Ratings Parameter Symbol Values Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) RthJA 72 Thermal resistance, junction-soldering point 1) RthJS 12 DIN humidity category, DIN 40 040 Unit C K/W E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = -0.25 mA, Tj = 25 C Gate threshold voltage -240 - - -0.8 -1.5 -2 V GS(th) VGS=VDS, ID = -1 mA Zero gate voltage drain current V V (BR)DSS A IDSS VDS = -240 V, VGS = 0 V, Tj = 25 C - -0.1 -1 VDS = -240 V, VGS = 0 V, Tj = 125 C - -10 -100 VDS = -60 V, VGS = 0 V, Tj = 25 C - - -0.2 Gate-source leakage current VGS = -20 V, V DS = 0 V Drain-Source on-state resistance - -10 -100 RDS(on) VGS = -10 V, ID = -0.2 A Data Sheet nA IGSS - 2 12 20 05.99 BSP 92 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance S gfs VDS 2 * ID * RDS(on)max, ID = -0.2 A Input capacitance 0.06 - 95 130 - 20 30 - 10 15 Crss VGS = 0 V, V DS = -25 V, f = 1 MHz Turn-on delay time pF Coss VGS = 0 V, V DS = -25 V, f = 1 MHz Reverse transfer capacitance - Ciss VGS = 0 V, V DS = -25 V, f = 1 MHz Output capacitance 0.13 ns td(on) VDD = -30 V, V GS = -10 V, ID = -0.25 A RGS = 50 Rise time - 8 12 - 25 40 - 25 33 - 42 55 tr VDD = -30 V, V GS = -10 V, ID = -0.25 A RGS = 50 Turn-off delay time td(off) VDD = -30 V, V GS = -10 V, ID = -0.25 A RGS = 50 Fall time tf VDD = -30 V, V GS = -10 V, ID = -0.25 A RGS = 50 Data Sheet 3 05.99 BSP 92 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current A IS TA = 25 C Inverse diode direct current,pulsed -0.2 - - -0.8 V V SD VGS = 0 V, IF = -0.4 A, Tj = 25 C Data Sheet - ISM TA = 25 C Inverse diode forward voltage - - 4 -0.9 -1.2 05.99 BSP 92 Power dissipation Ptot = (TA) Ptot Drain current ID = (TA) parameter: VGS -10 V 2.0 -0.22 W A 1.6 ID -0.18 -0.16 1.4 -0.14 1.2 -0.12 1.0 -0.10 0.8 -0.08 0.6 -0.06 0.4 -0.04 0.2 -0.02 0.0 0.00 0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 TA 120 C 160 TA Safe operating area ID=f(VDS) Transient thermal impedance Zth JA = (tp ) parameter: D = tp / T parameter : D = 0, TC=25C 10 2 K/W 10 1 ZthJA 10 0 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 10 -3 single pulse 0.02 0.01 10 -4 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Data Sheet 5 05.99 BSP 92 Typ. output characteristics ID = (VDS) parameter: tp = 80 s -0.45 Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 65 Ptot = 2W lk j i h A a -2.0 -0.35 RDS (on) b -2.5 g c -3.0 -0.30 b c d e f 55 VGS [V] ID a 50 45 d -3.5 40 e -4.0 -0.25 f -4.5 35 f g -5.0 30 h -6.0 -0.20 e -0.15 d i -7.0 j -8.0 25 20 k -9.0 g l -10.0 15 -0.10 c -0.05 10 b 5 a 0.00 0 -2 -4 -6 -8 -10 VGS [V] = a b c d e f -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -2.0 g h i j k -6.0 -7.0 -8.0 -9.0 -10.0 0 V -14 0.00 -0.04 -0.08 -0.12 -0.16 -0.20 -0.24 -0.28 VDS A -0.36 ID Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 s Typ. forward transconductance gfs = f (ID) VDS 2 x ID x RDS(on)max V DS2 x ID x RDS(on)max parameter: tp = 80 s, 0.20 -0.40 S A ID h j i k gfs -0.30 0.16 0.14 -0.25 0.12 0.10 -0.20 0.08 -0.15 0.06 -0.10 0.04 -0.05 0.02 0.00 0 0.00 -1 -2 -3 -4 -5 -6 -7 -8 V -10 0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 VGS Data Sheet A -0.40 ID 6 05.99 BSP 92 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = -0.2 A, VGS = -10 V Gate threshold voltage VGS (th) = (Tj ) parameter: VGS = VDS, ID = -1 mA 50 -4.6 V -4.0 RDS (on) 40 VGS(th) 35 -3.6 -3.2 30 -2.8 -2.4 98% 25 98% -2.0 20 15 typ -1.6 typ -1.2 2% 10 -0.8 5 -0.4 0 0.0 -60 -20 20 60 100 C 160 -60 -20 20 60 100 Tj C 160 Tj Typ. capacitances Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 -10 0 pF A IF C 10 2 -10 -1 Ciss Coss 10 1 -10 -2 Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 -5 -10 -15 -20 -25 -30 V -10 -3 0.0 -40 VDS Data Sheet -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD 7 05.99 BSP 92 Safe operating area ID=f(V DS) Drain-source breakdown voltage V(BR)DSS = (Tj) parameter : D = 0.01, TC=25C -285 V -275 V(BR)DSS -270 -265 -260 -255 -250 -245 -240 -235 -230 -225 -220 -215 -60 -20 20 60 100 C 160 Tj Data Sheet 8 05.99