Data Sheet 1 05.99
SIPMOS ® Small-Signal Transistor
• P channel
• Enhancement mode
• Logic Level
• V
GS(th) = -0.8...-2.0 V
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Type
V
DS
I
D
R
DS(on) Package Marking
BSP 92 -240 V -0.2 A 20
Ω
SOT-223 BSP 92
Type Ordering Code Tape and Reel Information
BSP 92 Q62702-S653 E6327
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage
V
DS -240 V
Drain-gate voltage
R
GS = 20 k
Ω
V
DGR -240
Gate source voltage
V
GS
±
20
Gate-source peak voltage,aperiodic
V
gs
±
Continuous drain current
T
A = 35 ˚C
I
D -0.2
A
DC drain current, pulsed
T
A = 25 ˚C
I
Dpuls -0.8
Power dissipation
T
A = 25 ˚C
P
tot 1.7
W
BSP 92
BSP 92
Data Sheet 2 05.99
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature
T
j -55 ... + 150 ˚C
Storage temperature
T
stg -55 ... + 150
Thermal resistance, chip to ambient air 1)
R
thJA
≤
72 K/W
Thermal resistance, junction-soldering point 1)
R
thJS
≤
12
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at
T
j = 25˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
GS = 0 V,
I
D = -0.25 mA,
T
j = 25 ˚C
V
(BR)DSS -240 - -
V
Gate threshold voltage
V
GS=
V
DS,
I
D = -1 mA
V
GS(th) -0.8 -1.5 -2
Zero gate voltage drain current
V
DS = -240 V,
V
GS = 0 V,
T
j = 25 ˚C
V
DS = -240 V,
V
GS = 0 V,
T
j = 125 ˚C
V
DS = -60 V,
V
GS = 0 V,
T
j = 25 ˚C
I
DSS
-
-
-
-
-10
-0.1
-0.2
-100
-1
µA
Gate-source leakage current
V
GS = -20 V,
V
DS = 0 V
I
GSS - -10 -100
nA
Drain-Source on-state resistance
V
GS = -10 V,
I
D = -0.2 A
R
DS(on) - 12 20
Ω
BSP 92
Data Sheet 3 05.99
Electrical Characteristics, at
T
j = 25˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
DS
≥
2 *
I
D *
R
DS(on)max,
I
D = -0.2 A
g
fs 0.06 0.13 -
S
Input capacitance
V
GS = 0 V,
V
DS = -25 V,
f
= 1 MHz
C
iss - 95 130
pF
Output capacitance
V
GS = 0 V,
V
DS = -25 V,
f
= 1 MHz
C
oss - 20 30
Reverse transfer capacitance
V
GS = 0 V,
V
DS = -25 V,
f
= 1 MHz
C
rss - 10 15
Turn-on delay time
V
DD = -30 V,
V
GS = -10 V,
I
D = -0.25 A
R
GS = 50
Ω
t
d(on)
- 8 12
ns
Rise time
V
DD = -30 V,
V
GS = -10 V,
I
D = -0.25 A
R
GS = 50
Ω
t
r
- 25 40
Turn-off delay time
V
DD = -30 V,
V
GS = -10 V,
I
D = -0.25 A
R
GS = 50
Ω
t
d(off)
- 25 33
Fall time
V
DD = -30 V,
V
GS = -10 V,
I
D = -0.25 A
R
GS = 50
Ω
t
f
- 42 55
BSP 92
Data Sheet 4 05.99
Electrical Characteristics, at
T
j = 25˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
A = 25 ˚C
I
S- - -0.2
A
Inverse diode direct current,pulsed
T
A = 25 ˚C
I
SM - - -0.8
Inverse diode forward voltage
V
GS = 0 V,
I
F = -0.4 A,
T
j = 25 ˚C
V
SD - -0.9 -1.2
V
BSP 92
Data Sheet 5 05.99
Power dissipation
P
tot =
ƒ
(
T
A)
020 40 60 80 100 120 ˚C 160
T
A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
W
2.0
P
tot
Drain current
I
D =
ƒ
(
T
A)
parameter:
V
GS
≥
-10 V
020 40 60 80 100 120 ˚C 160
T
A
0.00
-0.02
-0.04
-0.06
-0.08
-0.10
-0.12
-0.14
-0.16
-0.18
A
-0.22
I
D
Safe operating area
I
D=f(
V
DS)
parameter :
D
= 0,
T
C=25˚C Transient thermal impedance
Z
th JA =
ƒ
(
t
p)
parameter:
D = t
p /
T
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
Z
thJA
10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
BSP 92
Data Sheet 6 05.99
Typ. output characteristics
I
D =
ƒ(
V
DS)
parameter:
t
p = 80 µs
0-2 -4 -6 -8 -10 V-14
V
DS
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
-0.35
A
-0.45
I
D
V
GS [V]
a
a -2.0
b
b -2.5
c
c -3.0
d
d -3.5
e
e -4.0
ff -4.5
g
g -5.0
h
h -6.0
i
i -7.0
j
j -8.0
k
k -9.0
l
P
tot = 2 W
l -10.0
Typ. drain-source on-resistance
R
DS (on) =
ƒ(
I
D)
parameter:
t
p = 80 µs,
T
j = 25 ˚C
0.00 -0.04 -0.08 -0.12 -0.16 -0.20 -0.24 -0.28 A-0.36
I
D
0
5
10
15
20
25
30
35
40
45
50
55
Ω
65
R
DS (on)
V
GS [V] =
a
-2.0
V
GS [V] =
a
a
-2.5
b
b
-3.0
c
c
-3.5
d
d
-4.0
e
e
-4.5
f
f
-5.0
g
g
-6.0
h
h
-7.0
i
i
-8.0
j
j
-9.0
k
k
-10.0
Typ. transfer characteristics
I
D
= f
(
V
GS)
parameter:
t
p = 80 µs
V
DS
≥
2 x
I
D x
R
DS(on)max
0-1 -2 -3 -4 -5 -6 -7 -8 V-10
V
GS
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
A
-0.40
I
D
Typ. forward transconductance
g
fs =
f
(
I
D)
parameter:
t
p = 80 µs,
V
DS
≥
2 x
I
D x
R
DS(on)max
0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 A-0.40
I
D
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
S
0.20
g
fs
BSP 92
Data Sheet 7 05.99
Drain-source on-resistance
R
DS (on) =
ƒ
(
T
j)
parameter:
I
D = -0.2 A,
V
GS = -10 V
-60 -20 20 60 100 ˚C 160
T
j
0
5
10
15
20
25
30
35
40
Ω
50
R
DS (on)
typ
98%
Gate threshold voltage
V
GS (th) =
ƒ
(
T
j)
parameter:
V
GS =
V
DS,
I
D = -1 mA
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
-3.2
-3.6
-4.0
V
-4.6
V
GS(th)
-60 -20 20 60 100 ˚C 160
T
j
2%
typ
98%
Typ. capacitances
C
=
f
(
V
DS)
parameter:
V
GS=0V,
f
= 1 MHz
0-5 -10 -15 -20 -25 -30 V-40
V
DS
0
10
1
10
2
10
3
10
pF
C
C
oss
C
iss
C
rss
Forward characteristics of reverse diode
I
F =
ƒ
(
V
SD)
parameter:
T
j
, t
p = 80 µs
-3
-10
-2
-10
-1
-10
0
-10
A
I
F
0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V-3.0
V
SD
T
j = 25 ˚C typ
T
j = 25 ˚C (98%)
T
j = 150 ˚C typ
T
j = 150 ˚C (98%)
BSP 92
Data Sheet 8 05.99
Drain-source breakdown voltage
V
(BR)DSS =
ƒ
(
T
j)
-60 -20 20 60 100 ˚C 160
T
j
-215
-220
-225
-230
-235
-240
-245
-250
-255
-260
-265
-270
-275
V
-285
V
(BR)DSS
Safe operating area
I
D=f(
V
DS)
parameter :
D
= 0.01,
T
C=25˚C
