FEATURES
DTrenchFETr Power MOSFET
DHigh Efficiency PWM Optimized
D100% Rg Tested
D100% UIS Tested
RoHS
COMPLIANT
Si4892DY
Vishay Siliconix
Document Number: 71407
S-51455—Rev. F, 01-Aug-05
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)
30
0.012 @ VGS = 10 V 12.4
30
0.020 @ VGS = 4.5 V 9.6
SD
SD
SD
GD
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
D
G
S
Ordering Information: Si4892DY-T1
Si4892DY-T1–E3 (Lead (Pb)–free)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS "20 V
Continuous Drain Current (TJ= 150
_
C)a
TA = 25_C
ID
12.4 8.8
Continuous Drain Current (TJ = 150_C)a
TA = 70_CID9.9 7.0
Pulsed Drain Current IDM "50 A
Continuous Source Current (Diode Conduction)aIS2.60 1.3
Avalanche Current
L=01mH
IAS 20
Single-Pulse Avalanche Energy L = 0.1 mH EAS 20 mJ
Maximum Power Dissipationa
TA = 25_C
PD
3.1 1.6
W
Maximum Power Dissipationa
TA = 70_CPD2.0 1.0 W
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 _C
THERMAL RATINGSRESISTANCE
Parameter Symbol Typical Maximum Unit
Maximum Junction to Ambient (MOSFET)a
t v 10 sec
R
34 40
Maximum Junction-to-Ambient (MOSFET)a
Steady State RthJA 70 80 _C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 17 20
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Si4892DY
Vishay Siliconix
www.vishay.com
2
Document Number: 71407
S-51455—Rev. F, 01-Aug-05
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.80 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V 1
mA
Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 70_C 5 mA
On-State Drain CurrentaID(on) VDS w 5 V, VGS = 10 V50 A
Drain
-
Source On
-
State Resistance
a
rDS(on)
VGS = 10 V, I D = 12.4 A 0.010 0.012
W
D
ra
i
n-
S
ource
O
n-
St
a
t
e
R
es
i
s
t
ance
a
rDS(on) VGS = 4.5 V, ID = 9.6 A 0.016 0.020
W
Forward Transconductanceagfs VDS = 15 V, ID = 12.4 A 27 S
Diode Forward VoltageaVSD IS = 2.6 A, VGS = 0 V 0.75 1.2 V
Dynamicb
Total Gate Charge Qg8.7 10.5
Gate-Source Charge Qgs VDS = 15 V, VGS = 5.0 V, ID = 12.4 A 2.4 nC
Gate-Drain Charge Qgd 3.5
Gate Resistance Rg0.5 1.1 1.9 W
Turn-On Delay Time td(on) 10 20
Rise Time trVDD = 15 V, RL = 15 W11 20
Turn-Off Delay Time td(off)
VDD
=
15
V
,
RL
=
15
W
ID ^ 1 A, VGEN = 10 V, RG = 6 W24 50 ns
Fall Time tf10 20
Source-Drain Reverse Recovery Time trr
IF=26A di/dt = 100 A/ms
50 75
Reverse Recovery Charge Qrr
IF = 2.6 A, di/dt = 100 A/ms38 nC
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0
10
20
30
40
50
01234
VGS = 10 thru 4 V
25_C
TC = 125_C
2 V
–55_C
3 V
Output Characteristics Transfer Characteristics
VDS – Drain-to-Source Voltage (V)
– Drain Current (A)ID
VGS – Gate-to-Source Voltage (V)
– Drain Current (A)ID
Si4892DY
Vishay Siliconix
Document Number: 71407
S-51455—Rev. F, 01-Aug-05
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.000
0.005
0.010
0.015
0.020
0.025
0 1020304050
0
2
4
6
8
10
0 2 4 6 8 10 12 14 16
0.6
0.8
1.0
1.2
1.4
1.6
1.8
–50 –25 0 25 50 75 100 125 150
0
200
400
600
800
1000
1200
0 5 10 15 20 25 30
Crss
Coss
Ciss
VDS = 15 V
ID = 12.4 A
VGS = 10 V
ID = 12.4 A
VGS = 10 V
Gate Charge
On-Resistance vs. Drain Current
– Gate-to-Source Voltage (V)
Qg – Total Gate Charge (nC)
VDS – Drain-to-Source Voltage (V)
C – Capacitance (pF)
VGS – On-Resistance (rDS(on) W)
ID – Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
TJ – Junction Temperature (_C)
VGS = 4.5 V
1.0 1.2
0.00
0.01
0.02
0.03
0.04
0.05
0246810
1
10
50
ID = 12.4 A
0.00 0.2 0.4 0.6 0.8
TJ = 25_C
TJ = 150_C
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
– On-Resistance (rDS(on) W)
VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)
– Source Current (A)IS
rDS(on) – On-Resistance
(Normalized)
Si4892DY
Vishay Siliconix
www.vishay.com
4
Document Number: 71407
S-51455—Rev. F, 01-Aug-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
–1.0
–0.8
–0.6
–0.4
–0.2
–0.0
0.2
0.4
–50 –25 0 25 50 75 100 125 150
ID = 250 mA
Threshold Voltage
Variance (V)VGS(th)
TJ – Temperature (_C)
10–3 10–2 1 10 60010–1
10–4 100
0.01
0
1
50
20
30
10 6000.1
Single Pulse Power
Time (sec)
10
40
Power (W)
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 70_C/W
3. TJM – TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
10–3 10–2 11010–1
10–4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
100
