1N2133A thru 1N2138AR Silicon Standard Recovery Diode VRRM = 50 V - 600 V IF =60 A Features * High Surge Capability * Types up to 600 V VRRM DO-5 Package Maximum ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions 1N2133A (R) 1N2135A (R) 1N2137A (R) 1N2138A (R) Unit Repetitive p p peak reverse voltage g VRRM 300 400 500 600 V RMS reverse voltage VRMS 210 280 350 420 V DC blocking voltage VDC 200 V 50 100 150 Continuous forward current IF TC 150 C 60 60 60 60 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 C, tp = 8.3 ms 1050 1050 1050 1050 A Operating temperature Storage temperature Tj Tstg -65 to 200 -65 to 200 -65 to 200 -65 to 200 -65 to 200 -65 to 200 -65 to 200 -65 to 200 C C Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Diode forward voltage Reverse current Symbol VF IR Conditions 1N2133A (R) 1N2135A (R) 1N2137A (R) 1N2138A (R) IF = 60 A, Tj = 25 C VR = 50 V, Tj = 25 C VR = 50 V, Tj = 150 C Unit 1.1 10 15 1.1 10 15 1.1 10 15 1.1 10 15 A mA V 0.65 0.65 0.65 0.65 C/W Thermal characteristics Thermal resistance, junction case www.genesicsemi.com RthJC 1 1N2133A thru 1N2138AR www.genesicsemi.com 2