2SC4793
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
www.unisonic.com.tw
QW-R219-009,A
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage V
CBO
230 V
Collector-Emitter Voltage V
CEO
230 V
Emitter-Base Voltage V
EBO
5 V
Collector Current I
C
1 A
Base Current I
B
0.1 A
Ta=25℃ 2.0 W
Collector Power Dissipation T
C
=25℃ P
C
20 W
Junction Temperature T
J
+150 ℃
Storage Temperature Range T
STG
-55 ~ +150 ℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless others specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage BV
CEO
I
C
=10mA
,
I
B
=0 230 V
Base -Emitter Voltage V
BE
V
CE
=5V
,
I
C
=500mA 1.0 V
Collector-Emitter Saturation Voltage V
CE(SAT)
I
C
=500mA
,
I
B
=50mA 1.5 V
Collector Cut-off Current I
CBO
V
CB
=230V
,
I
E
=0 1.0 µA
Emitter Cut-off Current I
EBO
V
EB
=5V
,
I
C
=0 1.0 µA
DC Current Gain h
FE
V
CE
=5V
,
I
C
=100mA 100 320
Transition Frequency f
T
V
CE
=10V
,
I
C
=100mA 100 MHz
Collector Output Capacitance Cob V
CB
=10V
,
I
E
=0
,
f=1MHz 20 pF