TSM2N7002K
60V N-Channel MOSFET
1/7
Version: C11
SOT
-
23
SOT
-
323
Features
Low On-Resistance
ESD Protected 2KV
High Speed Switching
Low Voltage Drive
Ordering Information
Part No. Package Packing
TSM2N7002KCX RF SOT-23 3Kpcs / 7” Reel
TSM2N7002KCX RFG
SOT-23 3Kpcs / 7” Reel
TSM2N7002KCU RF SOT-323 3Kpcs / 7” Reel
TSM2N7002KCU RFG
SOT-323 3Kpcs / 7” Reel
Note: “G” denotes for Halogen Free
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
60 V
Gate-Source Voltage V
GS
±20 V
Drain Current Continuous @ T
A
=25ºC
I
D
300 mA
Pulsed I
DM
800
Drain Reverse Current Continuous @ T
A
=25ºC
I
DR
300 mA
Pulsed I
DMR
800
Maximum Power Dissipation P
D
300 mW
Operating Junction Temperature T
J
+150
o
C
Operating Junction and Storage Temperature Range T
J
, T
STG
-55 to +150
o
C
Thermal Performance
Parameter Symbol Limit Unit
Lead Temperature (1/8” from case) T
L
5 S
Junction to Ambient Thermal Resistance (PCB mounted) RӨ
JA
350
o
C/W
Notes:
a. Pulse width 300us, Duty cycle 2%
b. When the device is mounted on a glass epoxy board with area measuring 1 x 0.75 x 0.62 inch.
c. The power dissipation of the package may result in a continuous drain current.
Block Diagram
N-Channel MOSFET
Pin
Definition
:
1. Gate
2. Source
3. Drain
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
() I
D
(mA)
60 2 @ V
GS
= 10V 300
4 @ V
GS
= 4.5V 200
TSM2N7002K
60V N-Channel MOSFET
2/7
Version: C11
Electrical Specifications
(Ta = 25
o
C, unless otherwise noted)
Parameter Conditions Symbol
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=250µA BV
DSS
60 -- -- V
Gate Threshold Voltage V
DS
=V
GS
, I
D
=250µA V
GS(TH)
1.0 1.5 2.5 V
Gate Body Leakage V
GS
=±20V, V
DS
=0V I
GSS
-- -- ±10 uA
Zero Gate Voltage Drain Current V
DS
=60V, V
GS
=0V I
DSS
-- -- 1.0 uA
Drain-Source On-State Resistance V
GS
=10V, I
D
=300mA R
DS(ON)
-- 1.2 2
V
GS
=4.5V, I
D
=100mA -- 2 4
Forward Transconductance V
DS
=10V, I
D
=200mA g
fs
100 -- -- mS
Diode Forward Voltage I
S
=300mA, V
GS
=0V V
SD
-- 0.8 1.4 V
Dynamic
b
Total Gate Charge V
DS
=10V, I
D
= 250mA,
V
GS
=4.5V
Q
g
-- 0.4 0.6 nC
Input Capacitance V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 30 --
pF
Output Capacitance C
oss
-- 6 --
Reverse Transfer Capacitance C
rss
-- 2.5 --
Switching
c
Turn-On Delay Time V
DD
=30V, R
G
=10
I
D
=200mA, V
GEN
=10V, t
d(on)
-- -- 25 nS
Turn-Off Delay Time t
d(off)
-- -- 35
Notes:
a. pulse test: PW 300µS, duty cycle 2%
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
TSM2N7002K
60V N-Channel MOSFET
3/7
Version: C11
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
TSM2N7002K
60V N-Channel MOSFET
4/7
Version: C11
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
TSM2N7002K
60V N-Channel MOSFET
5/7
Version: C11
SOT-23 Mechanical Drawing
Marking Diagram
SOT-23 DIMENSION
DIM
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
A 1.00 BSC 0.039 BSC
A1 -- 0.10 -- 0.004
bp 0.37 0.42 0.014
0.016
C 0.15 0.09 0.005
0.004
D 2.80 3.00 0.110
0.118
E 1.20 1.40 0.047
0.055
e 1.9 BSC 0.075 BSC
e1 0.95 BSC 0.037 BSC
H
E
2.35 2.45 0.093
0.096
L
P
0.15 0.45 0.005
0.018
Q 0.45 0.55 0.018
0.022
V 0.2 BSC 0.007 BSC
W 0.1 BSC 0.004 BSC
TSM2N7002K
60V N-Channel MOSFET
6/7
Version: C11
SOT-323 Mechanical Drawing
Marking Diagram
SOT-323 DIMENSION
DIM
MILLIMETERS INCHES
MIN MAX MIN MAX
A 0.80 1.10 0.031 0.043
A1
-- 0.10 -- 0.004
bp
0.30 0.40 0.012 0.016
C 0.10 0.25 0.004 0.010
D 1.80 2.20 0.071 0.087
E 1.15 1.35 0.045 0.053
e 1.30 BSC 0.051 BSC
e1
0.65 BSC 0.026 BSC
H
E
2.00 2.20 0.079 0.087
Lp
0.15 0.45 0.006 0.018
Q 0.20 BSC 0.007 BSC
W 0.20 BSC 0.007 BSC
TSM2N7002K
60V N-Channel MOSFET
7/7
Version: C11
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