T4-LDS-0064, Rev. 3 (121467) ©2012 Microsemi Corporation Page 1 of 9
2N6782, 2N6784 and 2N6786
Availa ble on
commercial
versions
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/556
Qualified Levels:
JAN, JANT X, and
JANTXV
DESCRIPTION
This family of 2N6782, 2N6 784 and 2N6786 switching transistors are military qualified up to
the JANTXV level for high-reliab ilit y appl icati ons . These devices are also available in a l ow
profile U-18 LCC surface mount package. Microsemi also offers numerous other transistor
products to meet higher and lower power ratings with various switching speed requirements in
both through-hole and surface-mount packages.
TO-205AF (TO-39)
Package
Also available in:
U-18 LCC package
(surface mount)
2N6782U & 2N6786U
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N6782, 2N 6784 and 2N6786 number series.
• JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/556.
(See part nomenclature for all available options.)
• RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
• Lightweight top-hat design with flexible terminals offers a variety of mounting flexibility.
• Military and other high-reliability applic ations.
MAXIMUM RATINGS @ TA = +25 ºC unless otherwise stated
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions
Symbol
Value
Unit
Operating & Storage Junction Temperature Range
TJ & Tstg
-55 to +150
°C
Thermal Resi stan ce Jun cti on-to-Case
R
ӨJC
8.33
oC/W
Total Power Dissipation
A
(1)
PT
0.8
15
W
Drain-Source Voltage, dc 2N6782
2N6784
VDS 100
200
400
V
Gate-Source Voltage, dc
VGS
± 20
V
Drain Current, dc @ T
C
= +25 ºC
(2)
2N6782
2N6784
2N6786
ID1
3.50
2.25
1.25
A
Drain Current, dc @ T
C
= +100 ºC
(2)
2N6782
2N6784
2N6786
ID2
2.25
1.50
0.80
A
Off-State Current (Peak Total Value)
(3)
2N6782
2N6784
2N6786
IDM
14.0
9.0
5.5
A (pk)
Source Current 2N6782
2N6784
2N6786
IS 3.50
2.25
1.25
A
See notes on next page.
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2N6782, 2N6784 and 2N6786
Notes: 1. Derate linearly 0.12 W/°C for TC > +25 °C.
2. The following formula derives the maximum theoret ical ID limit. ID i s also l imi t ed by package and internal wires and may be limited due to
pin diamet er.
3. IDM = 4 x ID1 as calc ulated i n note 1.
MECHANICAL and PACKAGING
• CASE: Hermetically sealed, kovar base, nickel cap.
• TERMINALS: Tin/lead solder dip nickel plat e or RoHS compliant pure tin plate (com mer cia l grade only) .
• MARKING: Part number, date code, manufacturer’s ID.
• WEIGHT: Approximately 1.064 grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N6782 (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compli ance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
SYMBOLS & DEFINITIONS
Symbol
Definition
di/dt
Rate of change of diode current while in reverse-recovery mode, recorded as maximum value.
IF
Forward current
RG
Gate drive impedance
VDD
Drain supply voltage
VDS
Drain source voltage, dc
VGS
Gate source voltage, dc
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2N6782, 2N6784 and 2N6786
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Drain-S our ce Br eakdown Volta ge
VGS = 0 V, ID = 1.0 mA 2N6782
2N6784
2N6786 V(BR)DSS 100
200
400 V
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 0.25 mA
VDS ≥ VGS, ID = 0.25 mA, TJ = +125 °C
VDS ≥ VGS, ID = 0.25 mA, TJ = -55 °C
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
V
Gate Current
VGS = ± 20 V, VDS = 0 V
VGS = ± 20 V, VDS = 0 V, TJ = +1 2 5 °C
IGSS1
IGSS2
±100
±200 nA
Drain Current
VGS = 0 V, VDS = 80 V
VGS = 0 V, VDS = 160 V
VGS = 0 V, VDS = 320 V
2N6782
2N6784
2N6786
IDSS1
25
µA
Drain Current
VGS = 0 V, VDS = 80 V, TJ = +125 °C
VGS = 0 V, VDS = 160 V, TJ = +125 °C
VGS = 0 V, VDS = 320 V, TJ = +125 °C
2N6782
2N6784
2N6786
IDSS2
0.25
mA
Static Drain-Source On-State Resistance
VGS = 10 V, ID = 2.25 A pulsed
VGS = 10 V, ID = 1.50 A pulsed
VGS = 10 V, ID = 0.80 A pulsed
2N6782
2N6784
2N6786
rDS(on)1
0.60
1.50
3.60
Ω
Static Drain-Source On-State Resistance
VGS = 10 V, ID = 3.50 A pulsed
VGS = 10 V, ID = 2.25 A pulsed
VGS = 10 V, ID = 1.25 A pulsed
2N6782
2N6784
2N6786
rDS(on)2
0.61
1.60
3.70
Ω
Static Drain-Source On-State Resistance
TJ = +125 °C
VGS = 10 V, ID = 2.25 A pulsed
VGS = 10 V, ID = 1.50 A pulsed
VGS = 10 V, ID = 0.80 A pulsed
2N6782
2N6784
2N6786
rDS(on)3
1.08
2.81
7.92
Ω
Diode Forward Voltage
VGS = 0 V, ID = 3.50 A pulsed
VGS = 0 V, ID = 2.25 A pulsed
VGS = 0 V, ID = 1.25 A pulsed
2N6782
2N6784
2N6786
VSD
1.5
1.5
1.4
V
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2N6782, 2N6784 and 2N6786
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
DYN AMIC CH AR ACTE RISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Gate Charge:
On-State Gate Charge
VGS = 10 V, ID = 3.50 A, VDS = 50 V
VGS = 10 V, ID = 2.25 A, VDS = 100 V
VGS = 10 V, ID = 1.25 A, VDS = 200 V
2N6782
2N6784
2N6786
Qg(on)
8.1
8.6
12
nC
Gate to Source Charge
VGS = 10 V, ID = 3.50 A, VDS = 50 V
VGS = 10 V, ID = 2.25 A, VDS = 100 V
VGS = 10 V, ID = 1.25 A, VDS = 200 V
2N6782
2N6784
2N6786
Qgs
1.7
1.5
1.8
nC
Gate to Drain Charge
VGS = 10 V, ID = 3.50 A, VDS = 50 V
VGS = 10 V, ID = 2.25 A, VDS = 100 V
VGS = 10 V, ID = 1.25 A, VDS = 200 V
2N6782
2N6784
2N6786
Qgd
4.5
5.5
7.6
nC
SWITCHING CHARACTERIS TICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-on delay time
ID = 3.50 A, VGS = 10 V, RG = 7.5 Ω, VDD = 50 V
ID = 2.25 A, VGS = 10 V, RG = 7.5 Ω, VDD = 100 V
ID = 1.25 A, VGS = 10 V, RG = 7.5 Ω, VDD = 200 V
2N6782
2N6784
2N6786
td(on)
15
ns
Rinse time
ID = 3.50 A, VGS = 10 V, RG = 7.5 Ω, VDD = 50 V
ID = 2.25 A, VGS = 10 V, RG = 7.5 Ω, VDD = 100 V
ID = 1.25 A, VGS = 10 V, RG = 7.5 Ω, VDD = 200 V
2N6782
2N6784
2N6786
tr
25
20
20
ns
Turn-off delay time
ID = 3.50 A, VGS = 10 V, RG = 7.5 Ω, VDD = 50 V
ID = 2.25 A, VGS = 10 V, RG = 7.5 Ω, VDD = 100 V
ID = 1.25 A, VGS = 10 V, RG = 7.5 Ω, VDD = 200 V
2N6782
2N6784
2N6786
td(off)
25
30
35
ns
Fall time
ID = 3.50 A, VGS = 10 V, RG = 7.5 Ω, VDD = 50 V
ID = 2.25 A, VGS = 10 V, RG = 7.5 Ω, VDD = 100 V
ID = 1.25 A, VGS = 10 V, RG = 7.5 Ω, VDD = 200 V
2N6782
2N6784
2N6786
tf
20
20
30
ns
Diode Reverse Recovery Time
di/dt ≤ 100 A/µs, VDD ≤ 50 V, IF = 3.50 A
di/dt ≤ 100 A/µs, VDD ≤ 50 V, IF = 2.25 A
di/dt ≤ 100 A/µs, VDD ≤ 50 V, IF = 1.25 A
2N6782
2N6784
2N6786
trr
180
350
540
ns
T4-LDS-0064, Rev. 3 (121467) ©2012 Microsemi Corporation Page 5 of 9
2N6782, 2N6784 and 2N6786
GRAPHS
t1, Rectangle Pulse Duration (seconds)
FIGURE 1
Thermal Response Curves
Thermal Response (ZθJC)
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2N6782, 2N6784 and 2N6786
GRAPHS (continued)
FIGURE 2 – Maximum Drain Current vs Case Temperature Graphs
TC CASE TEMPERATURE (ºC) TC CASE TEMPERATURE (ºC)
For 2N6782 For 2N 67 84
TC CASE TEMPERATURE (ºC)
For 2N6786
I
D,
DRAIN CURRENT (AMPERES)
I
D,
DRAIN CURRENT (AMPERES)
I
D,
DRAIN CURRENT (AMPERES)
T4-LDS-0064, Rev. 3 (121467) ©2012 Microsemi Corporation Page 7 of 9
2N6782, 2N6784 and 2N6786
GRAPHS (continued)
FIGURE 3 – Maximum Safe Operating Area
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2N6782
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2N6784
ID DRAIN CURRENT (AMPERES)
ID DRAIN CURRENT (AMPERES)
T4-LDS-0064, Rev. 3 (121467) ©2012 Microsemi Corporation Page 8 of 9
2N6782, 2N6784 and 2N6786
GRAPHS (continued)
FIGURE 3 – Maximum Safe Operating Area
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2N6786
ID DRAIN CURRENT (AMPERES)
T4-LDS-0064, Rev. 3 (121467) ©2012 Microsemi Corporation Page 9 of 9
2N6782, 2N6784 and 2N6786
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Beyond radius (r) maximum, J shall be held for a minimum length of .011 (0.028 mm).
3. Dimension TL measured from maximum HD.
4. Outline in this zone is not contr olled.
5. Dimension CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling.
6. Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 (0.18 mm) radius
of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
7. LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL
minimum.
8. All three leads.
9. Radius (r) applies to both inside corners of tab.
10. Drain is electrically connected to the case.
11. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
Dimensions
Symbol
Inch
Millimeters
Note
Min
Max
Min
Max
CD
0.305
0.335
7.75
8.51
CH
0.160
0.180
4.06
4.57
HD
0.335
0.370
8.51
9.40
LC
0.200 TP
5.08 TP
6
LD
0.016
0.021
0.41
0.53
7, 8
LL
0.500
0.750
12.70
19.05
7, 8
LU
0.016
0.019
0.41
0.48
7, 8
L1
0.050
1.27
7, 8
L2
0.250
6.35
7, 8
P
.100
2.54
5
Q
0.050
1.27
4
TL
0.029
0.045
0.74
1.14
3
TW
0.028
0.034
0.72
0.86
2
r
0.010
0.25
9
α
45° TP
45° TP
6