BAT754S - NXP Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 1999 Aug 05 2003 Mar 25

DISCRETE SEMICONDUCTORS

BAT754 series

Schottky barrier (double) diodes

fpa

M3D08

2003 Mar 25 2

NXP Semiconductors Product data sheet

Schottky barrier (double) diodes BAT754 series

FEATURES

•Very low forward voltage

•Guard ring protected

•Small plastic SMD package

•Low diode capac i ta nce.

APPLICATIONS

•Ultra high-speed switching

•Voltage clamping

•Protection circuits

•Blocking diodes

•Low power cons umption

applications, e.g. ha nd-held

applications.

DESCRIPTION

Planar Schottky barrier diode s

encapsulated in a SOT23 small

plastic SMD package. Low forward

voltage selection of the BAT54 series.

Single diodes and double diodes with

different pinning are available.

PINNING

PIN BAT754

A C S

1 a k1a1a1

2n.c. k2a2k2

3 k a1, a2k1, k2k1, a2

Fig.1 Simplified outline

(SOT23) and pin

configuration.

handbook, 2 columns

MGC421

Top view

Fig.2 BAT754 single diode

configuration (sym bol).

MLC357

Fig.3 BAT754A diode

configuration (sym bol).

MLC36

Fig.4 BAT754C diode

configuration (sym bol).

MLC35

Fig.5 BAT754S diode

configuration (sym bol).

MLC35

MARKING

Note

1. ∗ = p : Made in Hong Kong.

∗ = t : Made in Malaysia.

∗ = W : Made in China.

TYPE NUMBER MARKING

CODE(1)

BAT754 2K*

BAT754A 2L*

BAT754C 2M*

BAT754S 2N*

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NXP Semiconductors Pr oduct dat a shee t

Schottky barrier (double) diodes BAT754 series

LIMITING VALUES

In accordance with the A bsolute Maxi mum Rating Sys tem (IEC 60134).

ELECTRICAL CHARACTERISTIC S

Tamb = 25 °C unless otherwise specified.

Note

1. Pulse test: tp = 300 μs; δ ≤ 0.02.

THERMAL CHARACTE RISTICS

Note

1. Refer to SOT23 stan da r d moun tin g conditions.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

VRcontinuous revers e voltage −30 V

IFcontinuous forward current −200 mA

IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 −300 mA

IFSM non-repetitive peak forward current t = 8.3 ms half sinewave;

JEDEC method −600 mA

Tstg storage temperature −65 +150 °C

Tjjunction temperature −125 °C

Tamb operating ambient temperature −65 +125 °C

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

Per diode

VFforward voltage see Fig.6

IF = 0.1 mA −200 mV

IF = 1 mA −260 mV

IF = 10 mA −340 mV

IF = 30 mA −420 mV

IF = 100 mA 600 −mV

IRreverse current VR = 25 V; note 1; see Fig.7 −2μA

Cddiode capacit an ce f = 1 MHz; VR = 1 V; see Fig.8 −10 pF

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to

ambient note 1 500 K/W

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NXP Semiconductors Pr oduct dat a shee t

Schottky barrier (double) diodes BAT754 series

GRAPHICAL DATA

Fig.6 Forward current as a function of forward

voltage; typical values.

(1) Tamb = 125 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

handbook, halfpage

VF (V)

(mA)

10 11.20.80.40

MSA892

(3)(2)(1)

Fig.7 Reverse current as a fun ction of reverse

voltage; typical values.

(1) Tamb = 125 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

0102030

V (V)

(μA)

(1)

(2)

(3)

MSA893

Fig.8 Diode capacitance as a function of reverse

voltage; typical values.

f = 1 MHz; Tamb = 25 °C.

handbook, halfpage

0102030

VR (V)

(pF)

MSA891

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NXP Semiconductors Pr oduct dat a shee t

Schottky barrier (double) diodes BAT754 series

PACKAGE OUTLINE

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

97-02-28

99-09-13

IEC JEDEC EIAJ

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface mounted package; 3 leads SOT2

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NXP Semiconductors Pr oduct dat a shee t

Schottky barrier (double) diodes BAT754 series

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s) described in this document may have changed since this docu ment was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

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Limiting values ⎯ Stress abov e on e or more limit ing

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values a re s t ress ratings only and

operation of the device at these or an y other conditions

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Customer notification

This data sheet was changed to reflect the new company name NXP Semicon ductors. No change s were

made to the content, except for the legal definitions and disclaimer s.

Printed in The Netherlands 613514/02/pp7 Date of release: 2003 Mar 25 Docum ent order numbe r: 9397 750 10968