INTERNATIONAL RECTIFIER Data Sheet No. PD-9.877 IQR AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR D N-CHANNEL IRFVOG4 60 Volt, 0.017 Ohm HEXFET The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies and virtually any application where military and/or high reliability is required. CASE STYLE AND DIMENSIONS 17,65 (0.695) 17.39 (0.685) 21.20 (0.835) 20.70 (0.815) 6.85 (0.270) 6.09 (0.240) CAUTION BERYLLIA WARNING PER MIL-S-19500 SEE PAGE 1-454 Ip current limited by pin diameter Product Summary Part Number | BVpss Rps(on) Ip IRFV064 60V 0.0170 45A* FEATURES: @ Avalanche Energy Rating @ Isolated and Hermetically Sealed @ Alternative to TO-3 Package @ Simple Drive Requirements @ Ease of Paralleling @ Ceramic Eyelets 4.19 (0.165) 17.65 (0.695) epee 394 (0.155) V7.0 (68) ~ 6.85 (0.270) ES cay 6.08 (0.240) 1.18 (0.045) | Oo I aa 0-085) 24.20 (0.835) i een TOR 20.70 (0.818) 13.91 (0,550) 37.00 (1.457) 123 13.46 (0.530)| | HT = 39.05 (0.750) Ht I 12.70 (0.500) tf 1265 (0.065) am | tet xeT eos | Res aK QEmearumg [o0.3e (OSU SLC) NOTES: 1 2 1-447 LEGEND 1 ORAIN DIMENSIONING & TCLERANCING PER ANSI Y14,5M - 1982. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES) . 2 SOURCE 3) GATE *For optional leadforms see page |-454, fig. 15 Conforms to JEDEC Outline TO-258AA* Dimensions in Millimeters and (Inches)IRFV064 Device Absolute Maximum Ratings Parameter IRFVO64 Units ip @ Vag = 10V, Tg = 25C Continuous Drain Current 45 Ip @ Vag = 10V, To = 100C Continuous Drain Current 4s* A lpw Pulsed Drain Current 400 | Pp @ To = 25C Max. Power Dissipali 300 WwW Linear Derating Factor 24 wk Ves Gate-to-Source Voltage +20 v Eas Single Putse Avalanche Energy @ 620 ms dvidt Peak Diode Recovery dvict @ 45 Vins Ty Operating Junction -55 to 150 Tsta Storage Range c Lead 900 (0.063 in. (1.6 mm) from case for 10s) Weight 108 (typical) g *Ip current limited by pin diameter Electrical Characteristics @ 1, = 25C (Unless Otherwiee Specified) Parameter Min. Typ. Max. Units Test Conditions 8Vpss Orain-to-Source Breakdown Voltage 60 - - v Vas = OV, Ip = 10mA ABVpgs/A4Ty Temperature Coefficient of - 0048 - vec Reference to 25C, Ip = 1.0 mA Breakdown Voltage A Static Drain-to-Source - _ 0.017 a Vag = 10V, Ip = 454 DS{on) On-State Resistance as . Vesithy Gate Threshold Voltage 20 - 40 v Vos = Vas: Ip = 250 nA Sts Forward Transconductance 21 - - SW) | Vps = 15V, Ipg = 454 loss Zero Gate Voltage Drain Current ~ - 25 A Vos = 08 x Max. Rating, V@g = OV = = 250 X Vps = 08 x Max. Rating Vas = W, Ty = 125C less Gate-to-Source Leakage Forward - _ 100 nA Ves = 20V less Gate-to-Source Leakage Reverse - ~ -100 Vas = -20V Qg Total Gate Charge - - 240 Ves = 10V, Ip = 45A Qgs Gate-to-Source Charge - - 53 nc Vos = 05 x Max. Rating Ogg Gate-to-Drain (Milter) Charge - _ 7 See Fig. 6 and 14 tajon) Turn-On Delay Time - - a Vop = 30V, Ip = 45A, Rg = 2.350 ty Rise Time _ - 120 ns ta(offy Turn-Oft Delay Time _ - 76 See Fig. 11 tt Fall Time - 93 Lp Internal Drain inductance - 50 - Measured from the drain Modified MOSFET symbol lead, 6 mm (0.26 in) from | showing the internal nH package to center of die. inductances. ls Internal Source Inductance - 13 _ Measured from the . source lead, 6 mm (0.25 in.) from package to source bonding pad. Cigg Input Capacitance - 7400 - Vas = 0. Vps = 25V Coss Output Capacitance - 3200 ~~ pF f = 1.0 MHz Cres Reverse Transfer Capacitance ~ 540 - See Fig. 5 Coc Drain-to-Case Capacitance - 2 - f = 1.0 MHzSource-Drain Diode Ratings and Characteristics IRFV064 Device Parameter Min. Typ. Max. Units Test Conditions Ig eine source Current ~ _ 45 A Moditied OS came sowing the integral e ism Fulbed Source Current - | 400 $ Vsgp Diode Forward Voltage - ~ 30 v Ty = 25C, Ig = 454, Vag = OV ter Reverse Recovery Time - _ 220 cr) Ty = 28C, ip = 45A, didt = < 100Aus @ Qrr Reverse Recovery Charge - - WwW we Vpp 3 50V ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlied by Lg + Lp. *ig current limited by pin diameter Thermal Resistance Parameter Min. We. Max. Units. Test Conditions Rinuc Junctionto-Case ~ - 0.42 Rincs Case-to-Sink - a2 - kw | Mounting surface flat, smooth, and greased Rthua Junction-to-Ambient - - 30 Typical socket mount Repetitive Rating; Puise width timited by @ 1 130A, = > Iso = , difdt = 300 A/ys, KW = CIW Rotor to corrent HEXFET relobity report Vpp = BVpsg. Ty = 125C WIK = WieG reliability report @ @Vop = 25\, Starting Ty = 25C, L = 79 mH, Rg = 250, Peak I, = 450 Suggested Ag = 2.350 Pulse width =< 300 xs; Duty Cycle = 2%IRFV064 Device GB a fe o = = = = 6b bt a i & & = | 5 5 Zz Zz 3 3 & jot & Qa a H eT 20us PULSE WIDTH 20us PULSE WIDTH Te = 25C Te = 450C 10-4 to! Vpg. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Vog, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics, To = 25C Fig. 2 Typleal Output Characteristics, Tc = 150C 2.5 lu Oo Zz a 5 B 4 2.0 i tg a x st a W 4.5 5 2a tu a N & aS ~ 2 P E10 5 42 = & & . 4 08 = 5 Vos = 25V & 7 20us PULSE WIDTH & 00 Ves = 10V 4 5 6 8 40 -B0 -40 -20 0 20 40 60 80 100 120 140 160 Veg. GATE-TO-SOURCE VOLTAGE (VOLTS) Ty JUNCTION TEMPERATURE ( C) Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resi Vs. Temp 1-450Gs = * = IMHz = Cgs + Cog Cus = Coa + C, CAPACITANCE (pf) 104 Vog. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 5 Typical Capacitance Vs. Drain-to-Source Voitage Igp, REVERSE ORAIN CURRENT (AMPERES) Veg = OV 4 0 : Vgp. SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 7 Typical Source-Drain Diode Forward Voltage 1-451 GATE-TO-SOUACE VOLTAGE (VOLTS) Ves: Ip. DRAIN CURRENT (AMPERES) IRFV064 Device 20 16 42 SEE FIGURE 14 80 160 Qg, TOTAL GATE CHARGE (nC) 40 Fig. 6 Typical Gate Charge Vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY Ros (oN Ton25C Ty=150C SINGLE 5 4 2 Vpg. DAAIN-TO-SOURCE VOLTAGE (VOLTS} 04? S 4 2 5 402 2 5 408 Fig. 8 Maximum Safe Operating AreaIp. DRAIN CURRENT (AMPERES) IRFV064 Device oe [" 90% X /\_| 25 50 75 100 125 150 10% KT Tc, CASE TEMPERATURE ( C) Ves (ssi taon) ty tao) Fig. 10 Maximum Drain Current Vs. Case Temperature Fig. 11b Switching Time Waveforms THERMAL RESPONSE (24 5,) o pe SINGLE PULSE (THERMAL RESPONSE) Pod | ste eA e NOTES: 4. DUTY FACTOR, D=t4/t2 2. PEAK Ty"Pom X Zthjc + Te 40 . 1075 10-4 1073 10? 0.4 4 10 t4, RECTANGULAR PULSE OURATION (SECONDS) Fig. 9 Maximum Effective Transient Thermal Imped J lon-to-Case Vs. Pulse Duration Rp Vos Wi Ves pee x BY PACKAGE Pulse Width $1ps Duty Factor $0.1% + Fig. 11a Switching Time Test Circuit 1-452IRFV064 Device L Vos A 0.700 Vary tp to obtain . required peak IL D.U.T. PEAK I, = 453A 3) =o Vop = 25V 7 Vop > 0.500 rh I a 0.012 Wi 0.400 al = = * 0 Fig. 12a Unclamped Inductive Test Circuit ye 2 tA 0.200 Q ul 0, BYpss fh J . 50 75 400 126 150 / Yop STARTING Ty, JUNCTION TEMPERATURE (C / Vps - / \ Fig. 12 Maximum Avalanche Energy Vs. Starting / \ Junction Temperature / \ IL- _< Nee ee Fig. 12b Unclamped Inductive Waveforms @ Driver Gate Drive Pw t<+ a 5 : bt Period * Seriod 0.U.T, Circuit Layout Considerations PW eriod tf) * Low Siray Inductance sasmrcanes %) @ *Ground Plane * Low Leakage Inductance u Current Transformer yy + < - D.U.T. Igp Waveform Reverse pee ES Recovery4 | Body Diode Forward \ Current Current, id J. @ D.U.T. Vpg Waveform Diode Recovery ee dvit NG + dvidt controlled by Re Re-Appied bats + Driver same type as D.U.T. at, Voltage of Body Diode Forward Drop * Isp controlted by Duty Factor D" Yop @ inductor Current * D.U.T. - Device Under Test Sree re Ripple < 5% "Vag = 5V for Logic Level Devices Fig. 13 Peak Diode Recovery dv/dt Test Circuit +-453IRFV064 Device 10V Va Fig. 14a Basic Gate Charge Waveform Current Regulator | as D.U.T. . Vos Charge + Current Sampling Resistors Fig. 14b Gate Charge Test Circuit a 0 0.0 6.85 (0.270) ae (0.240) [1:18 (0.045) Tae 0.035) a. 21,20 (0.895) 1 3.68 0.145) 17-70 0.60) 20.70 (0.816) 13.91 (0,550) = 26.59 (1.047) | TOR oe SS eH 3.18 (0. 125)" Saou 33 (0.97) 1.2 3 Le} 8.63 (0.340) Panay A Tar 0-305 1.65 (0.065) 3.68 (0.145) } b= 3x RFU Ty sau Compr bak 3.43 (0.138) 14.22 (0.560) x | [20.50 (0.020) Gc la @ls] Tara LEGEND [o 0.55 (0.010) Ic} 11.43 (0. 450) 1 ORAIN 2 SOURCE 3 GATE NOTES: 1 DIMENSIONING & TOLERANCING PER ANS! Y14.5M - 1982. 2 ALL DIMENSIONS ARE SHOWN IN MILLIMETERS INCHES). 3 LEADFORM IS AVAILABLE IN EITHER ORIENTATION: (3.1) EXAMPLE: IRFVO64D (3.2) EXAMPLE: IRFVOS4U Fig. 15 Optional Leadforms for Outline TO-258 BERYLUA WARNING PER MIL-S-19500 Packages containing beryilia shall not be ground, sandblasted, machined, or have other operations performed on them which wil! produce heryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes Containing berylifum. 1-454