2SC2290
2001-01-31 1/3
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2290
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS
(LOW SUPPLY VOLTAGE USE)
Specified 12.5V, 28MHz Characteristics
Output Power : Po = 60WPEP (Min.)
Power Gain : Gp = 11.8dB (Min.)
Collector Efficiency : ηC = 35% (Min.)
Intermodulation Distortion : IMD = −30dB (Max.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 45 V
Collector-Emitter Voltage VCES 45 V
Collector-Emitter Voltage VCEO 18 V
Emitter-Base Voltage VEBO 4 V
Collector Current IC 20 A
Collector Power Dissipation PC 175 W
Junction Temperature Tj 175 °C
Storage Temperature Range Tstg −65~175 °C
JEDEC —
EIAJ —
TOSHIBA 2−13B1A
Weight: 5.2g
Unit in mm
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury o
r
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction o
r
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energ
y
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this documen
t
shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed b
y
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION o
r
others.
• The information contained herein is subject to change without notice.
000707EAA1
2SC2290
2001-01-31 2/3
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage V (BR) CEO I
C = 100mA, IB = 0 18 — — V
Collector-Emitter Breakdown Voltage V (BR) CES I
C = 100mA, VEB = 0 45 — — V
Emitter-Base Breakdown Voltage V (BR) EBO I
E = 1mA, IC = 0 4 — — V
DC Current Gain hFE V
CE = 5V, IC = 10A * 10 — 150 —
Collector Output Capacitance Cob VCB = 12.5V, IE = 0
f = 1MHz — — 500 pF
Power Gain Gp 11.8 13.8 — dB
Input Power Pi — 2.5 4 WPEP
Collector Efficiency ηC 35 — — %
Intermodulation Distortion IMD
VCC = 12.5V, f1 = 28.000MHz,
f2 = 28.001MHz
Iidle = 50mA
Po = 60WPEP (Fig.)
— — −30 dB
Series Equivalent Input Impedance Zin —
1.02
−j0.17 — Ω
Series Equivalent Output Impedance Zout
VCC = 12.5V, f1 = 28.000MHz,
f2 = 28.001MHz
Po = 60WPEP — 0.86
−j0.21 — Ω
* Pulse Test: Pulse Width ≤ 100µs, Duty Cycle ≤ 3%
CAUTION
Beryllia Ceramics is used in this product. The dust or vapor can be dangerous to humans. Do not break, cut, crush
or dissolve chemically. Dispose of this product properly according to law. Do not intermingle with normal industrial
or domestic waste.
2SC2290
2001-01-31 3/3
Fig. Pi TEST CIRCUIT
CAUTION
These are only typical curves and devices are not necessarily guaranteed at these curves.
