SBYV26C Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES * Superectifier structure for high reliability condition * Cavity-free glass-passivated junction SUPERECTIFIER(R) * Ideal for printed circuit boards * Ultrafast reverse recovery time * Low forward voltage drop * Low leakage current * Low switching losses, high efficiency DO-204AL (DO-41) * High forward surge capability * Meets environmental standard MIL-S-19500 * Solder dip 275 C max. 10 s, per JESD 22-B106 * AEC-Q101 qualified * Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 600 V For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. IFSM 30 A MECHANICAL DATA trr 30 ns VF 1.3 V TJ max. 175 C Case: DO-204AL, molded plastic over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Maximum repetitive peak reverse voltage VRRM 600 V Maximum RMS voltage VRMS 420 V Maximum DC blocking voltage VDC 600 V Maximum average forward rectified current 0.375" (9.5 mm) lead length at TL = 85 C (fig. 1) IF(AV) 1.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 30 A Non repetitive peak reverse energy ERSM (1) 5.0 mJ Operating junction and storage temperature range TJ, TSTG - 65 to + 175 C Note (1) Peak reverse energy measured with 8/20 s surge Document Number: 88735 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SBYV26C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Minimum avalanche breakdown voltage 100 A Maximum instantaneous forward voltage 1.0 A SYMBOL VALUE UNIT VBR 600 V TJ = 25 C TA = 25 C Maximum DC reverse current at rated DC blocking voltage 2.5 VF TJ = 175 C 5.0 IR TA = 165 C V 1.3 A 150 Max. reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 30 ns Maximum junction capacitance 4.0 V, 1 MHz CJ 45 pF Maximum reverse recovery current slope IF = 1 A, VR = 30 V, dIf/dt = - 1 A/s dIr/dt 7.0 A/s SYMBOL VALUE UNIT RJA(1) 70 RJL(2) 16 THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Typical thermal resistance C/W Notes (1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads (2) Thermal resistance from junction to lead at 0.375" (9.5 mm) lead length with both leads attached to heatsink ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.339 54 5500 13" diameter paper tape and reel 0.339 73 3000 Ammo pack packaging SBYV26C-E3/54 SBYV26C-E3/73 (1) 0.339 54 5500 13" diameter paper tape and reel SBYV26CHE3/73 (1) 0.339 73 3000 Ammo pack packaging SBYV26CHE3/54 Note AEC-Q101 qualified (1) RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 1.8 TL = Lead Temperature 1.0 D = 0.3 0.8 TA = Ambient Temperature 0.6 0.4 Mounted on P.C.B. D = 0.5 D = 0.8 D = 0.2 1.6 Lead Mounted on Heatsink Average Power Loss (W) Average Forward Rectified Current (A) 1.2 D = 0.1 1.4 D = 1.0 1.2 1.0 0.8 T 0.6 0.4 0.2 0.2 0 D = tp/T tp 0 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 1.2 Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 88735 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SBYV26C Vishay General Semiconductor 100 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p TJ = TJ Max. 10 ms Single Half Sine-Wave Junction Capacitance (pF) Peak Forward Surge Current (A) 100 10 1 0.1 1 1 10 10 100 1 10 100 Number of Cycles at 50 Hz Reverse Voltage (V) Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 6 - Typical Junction Capacitance 100 Transient Thermal Impedance (C/W) Instantaneous Forward Current (A) 100 TJ = 165 C 10 TJ = 125 C 1 TJ = 25 C 0.1 Pulse Width = 300 s 1 % Duty Cycle 0.01 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 4 - Typical Instantaneous Forward Characteristics Fig. 7 - Typical Transient Thermal Impedance Instantaneous Reverse Leakage Current (A) 100 10 TJ = 165 C TJ = 125 C 1 0.1 0.01 TJ = 25 C 0.001 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Reverse Leakage Characteristics Document Number: 88735 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SBYV26C Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-204AL (DO-41) 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) 1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA. www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 88735 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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