1. Product profile
1.1 General description
600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the
1030 MHz to 1090 MHz range.
1.2 Features and benefits
Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply
voltage of 48 V, an IDq of 100 mA, a tp of 50 μs with δ of 2 %:
Output power = 600 W
Power gain = 17 dB
Efficiency = 52 %
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1030 MHz to 1090 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, rega rd in g re str icti on of hazardous substances
(RoHS)
BLA6H1011-600
LDMOS avionics power transistor
Rev. 01 — 22 April 2010 Product data sheet
Table 1. Test information
Typical RF performance at Tcase =25
°
C; tp = 50
μ
s;
δ
= 2 %; IDq = 100 mA; in a class-AB production
test circuit.
Mode of operation f VDS PLGpηDtrtf
(MHz) (V) (W) (dB) (%) (ns) (ns)
pulsed RF 1030 to 1090 48 600 17 52 11 5
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
BLA6H1011-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 22 April 2010 2 of 13
NXP Semiconductors BLA6H1011-600
LDMOS avionics power transistor
1.3 Applications
600 W LDMOS pulsed power transistor intende d for TCAS a nd IFF a pplica tions in the
1030 MHz to 1090 MHz frequency range
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
5. Thermal characteristics
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1drain1
2drain2
3gate1
4gate2
5source [1]
5
12
43
4
3
5
1
2
sym117
Table 3. Ordering i nformation
Type number Package
Name Description Version
BLA6H1011-600 - flanged balanced LDMOST cera mic package;
2 mounting holes; 4 leads SOT539A
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 100 V
VGS gate-source voltage 0.5 13 V
IDdrain current - 72 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 200 °C
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Zth(j-case) transient thermal impedance from
junction to case Tcase =85°C; PL=600W
tp = 100 μs; δ= 10 % 0.06 K/W
tp = 50 μs; δ= 2 % 0.035 K/W
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Product data sheet Rev. 01 — 22 April 2010 3 of 13
NXP Semiconductors BLA6H1011-600
LDMOS avionics power transistor
6. Characteristics
6.1 Ruggedness in class-AB operation
The BLA6H1011-600 is capable of withstanding a loa d m ism at ch co rr es po nd in g to
VSWR = 5 : 1 through all phases under the following conditions: VDS =48V;
IDq =100mA; P
L=600W; t
p = 50 μs; δ = 2 %; f = 1030 MHz.
Table 6. DC characteristics
Tj = 25
°
C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; I
D= 2.7 mA 100 - - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID= 270 mA 1.25 1.8 2.25 V
IDSS drain leakage current VGS =0V; V
DS =50V--1.4μA
IDSX drain cut-off current VGS =V
GS(th) + 3.75 V;
VDS =10V 32 42 - A
IGSS gate leakage current VGS =11V; V
DS =0V--140nA
gfs forward transconductance VDS =10V; I
D= 270 mA 1.6 3 - S
RDS(on) drain-source on-state resistance VGS =V
GS(th) + 3.75 V;
ID=9.5A -100169mΩ
Table 7. RF characteristics
Mode of operation: pulsed RF; tp = 50
μ
s;
δ
= 2 %; RF performance at VDS =48V; I
Dq =100mA;
Tcase =25
°
C; unless otherwise specified, in a class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
PLoutput power 600 - - W
VDS drain-source voltage PL=600W--48V
Gppower gain PL=600W 1617- dB
RLin input return loss PL=600W 8 12 - dB
PL(1dB) output power at 1 dB gain compression - 700 - W
ηDdrain efficiency PL=600W 4752- %
Pdroop(pulse) pulse droop power PL=600W - 0 0.3 dB
trrise time PL= 600 W - 11 30 ns
tffall time PL=600W - 5 30 ns
BLA6H1011-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 22 April 2010 4 of 13
NXP Semiconductors BLA6H1011-600
LDMOS avionics power transistor
7. Application information
7.1 Impedance information
7.2 Performance curves
Table 8. Typical impedance
Typical values per section unless otherwise specified.
f ZSZL
MHz Ω Ω
1030 1.702 − j1.816 0.977 + j0.049
1060 1.815 − j1.760 1.033 + j0.221
1090 1.912 − j1.751 1.086 + j0.379
Fig 1. Definition of transis tor imp e da nc e
001aaf05
9
drain
Z
L
Z
S
gate
Th = 25 °C; VDS =48V; I
Dq = 100 mA; tp = 50 μs;
δ=2%.
(1) f = 1030 MHz
(2) f = 1090 MHz
Th = 25 °C; VDS =48V; I
Dq = 100 mA; tp = 50 μs;
δ=2%.
(1) f = 1030 MHz
(2) f = 1090 MHz
Fig 2. Power gain as a function of load power;
typical values Fig 3. Drain efficiency as a function of load power;
typical values
001aal832
PL (W)
0 900600300
8
12
4
16
20
Gp
(dB)
0
(1)
(2)
PL (W)
0 800600200 400
001aal833
20
40
60
ηD
(%)
0
(1)
(2)
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Product data sheet Rev. 01 — 22 April 2010 5 of 13
NXP Semiconductors BLA6H1011-600
LDMOS avionics power transistor
Th = 25 °C; PL = 600 W; VDS =48V; I
Dq = 100 mA;
tp=50μs; δ=2%. Th = 25 °C; VDS =48V; I
Dq = 100 mA; tp = 50 μs;
δ=2%.
(1) f = 1030 MHz
(2) f = 1090 MHz
Fig 4. Input return loss as a function of frequency;
typical values Fig 5. Load power as a function of input power;
typical values
f (MHz)
109510751035 1085106510451025 1055
001aal834
8
4
16
12
20
RLin
(dB)
0
001aal835
Pi (W)
018126
400
200
600
800
PL
(W)
0
(1)
(2)
Th = 65 °C; VDS =48V; I
Dq = 100 mA; tp = 50 μs;
δ=2%.
(1) f = 1030 MHz
(2) f = 1090 MHz
Th = 65 °C; VDS =48V; I
Dq = 100 mA; tp = 50 μs;
δ=2%.
(1) f = 1030 MHz
(2) f = 1090 MHz
Fig 6. Power gain as a function of load power;
typical values Fig 7. Drain efficiency as a function of load power;
typical values
PL (W)
0 800600200 400
001aal836
8
12
4
16
20
Gp
(dB)
0
(1)
(2)
PL (W)
0 800600200 400
001aal837
20
40
60
ηD
(%)
0
(1)
(2)
BLA6H1011-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 22 April 2010 6 of 13
NXP Semiconductors BLA6H1011-600
LDMOS avionics power transistor
7.3 Curves measured under Mode-S ELM pulse-conditions
Th = 65 °C; VDS =48V; I
Dq = 100 mA; tp = 50 μs; δ=2%.
(1) f = 1030 MHz
(2) f = 1090 MHz
Fig 8. Load power a s a fun ction of input powe r; ty pic a l va lues
Pi (W)
020168124
001aal838
400
200
600
800
PL
(W)
0
(1)
(2)
f = 1030 MHz; IDq = 100 mA.
(1) Th = −40 °C
(2) Th = +25 °C
(3) Th = +65 °C
f = 1030 MHz; IDq =100mA.
(1) Th = 25 °C
(2) Th = 65 °C
Fig 9. Power gain as a function of load power;
typical values Fig 10. Drain efficiency as a function of load powe r;
typical values
PL (W)
0 800600200 400
001aal839
15
17
13
19
21
Gp
(dB)
11
(1)
(2)
(3)
PL (W)
0 800600200 400
001aal840
40
20
60
80
ηD
(%)
0
(1)
(2)
BLA6H1011-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 22 April 2010 7 of 13
NXP Semiconductors BLA6H1011-600
LDMOS avionics power transistor
8. Test information
[1] American Technical Ceramics type 800B or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
[3] American Technical Ceramics type 200B or capacitor of same quality.
f = 1030 MHz; IDq = 100 mA.
(1) Th = −40 °C
(2) Th = +25 °C
(3) Th = +65 °C
Fig 11. Load power a s a fun ction of input powe r; ty pic a l va lues
Pi (W)
0161248
001aal841
400
200
600
800
PL
(W)
0
(1) (2) (3)
Table 9. List of components
For test circuit see Figure 12.
Component Description Value Remarks
C1, C4, C7 multilayer ceramic chip capacitor 82 p F [1]
C2 multilayer ceramic chip capacitor 22 μF; 35 V
C3, C5, C8 multilayer ceramic chip capacitor 39 p F [2]
C6, C9 multilayer ceramic chip capacitor 1 nF [2]
C10 multilayer ceramic chip capacitor 20 nF [3]
C11 electrolytic capacitor 47 μF; 63 V
R1 SMD resistor 56 Ω0603
R2 metal film resistor 51 Ω
R3 resistor 11 Ω
BLA6H1011-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 22 April 2010 8 of 13
NXP Semiconductors BLA6H1011-600
LDMOS avionics power transistor
Printed-Circuit Board (PCB): Duroid 6006; εr = 6.15 F/m; thickness = 0.64 mm; thickness copper plating = 35 μm.
See Table 9 for a list of components.
Fig 12. Component layout for class-AB production test circuit
001aal84
2
C3
C4
C1
R1
R2
C5 C6
C7
C10
C9
C8 R3
C11
C2
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Product data sheet Rev. 01 — 22 April 2010 9 of 13
NXP Semiconductors BLA6H1011-600
LDMOS avionics power transistor
9. Package outline
Fig 13. Package outline SOT539A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT539A 10-02-02
00-03-03
0 5 10 mm
scale
p
A
F
b
e
D
U2
L
H
Q
c
5
12
43
D1
E
A
w1AB
M M M
q
U1
H1
C
B
M M
w2C
E1
M
w3
UNIT A
mm
Db
11.81
11.56
0.18
0.10
31.55
30.94 13.72 9.53
9.27
17.12
16.10
10.29
10.03
4.7
4.2
ce U2
0.250.25 0.51
w3
35.56
qw
2
w1
F
1.75
1.50
U1
41.28
41.02
H1
25.53
25.27
p
3.30
3.05
Q
2.26
2.01
EE
1
9.50
9.30
inches 0.465
0.455
0.007
0.004
1.242
1.218
D1
31.52
30.96
1.241
1.219 0.540 0.375
0.365
0.674
0.634
0.405
0.395
0.185
0.165 0.0100.010 0.0201.400
0.069
0.059
1.625
1.615
1.005
0.995
0.130
0.120
0.089
0.079
0.374
0.366
H
3.48
2.97
0.137
0.117
L
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
BLA6H1011-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 22 April 2010 10 of 13
NXP Semiconductors BLA6H1011-600
LDMOS avionics power transistor
10. Abbreviations
11. Revision history
Table 10. Abbreviations
Acronym Description
IFF Identification Friend or Foe
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
RF Radio Frequency
SMD Surface Mounted Device
TCAS Traffic Collision Avoidance System
VSWR Voltage Standing-Wave Ratio
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLA6H1011-600_1 20100422 Product data sheet - -
BLA6H1011-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 22 April 2010 11 of 13
NXP Semiconductors BLA6H1011-600
LDMOS avionics power transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semicond uctors sales
office. In case of any inconsistency or conflict wit h the short data sheet, the
full data sheet shall pre va il.
Product specificatio n — The information and data provided in a Product
data sheet shall define the specification of the product as agr eed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
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Limited warr a nty and liability — Information in this document is believed to
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representations or warrant ies, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
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Notwithstanding any damages that customer might incur for any reason
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customer for the products described herein shall be limited in accordance
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Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
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Suitability for use — NXP Semiconductors product s are not designed,
authorized or warranted to be suitable for use in medical, milit ary, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application /use or t he application/use of customer’s third party
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suitable and fit for the Appl ica tion plann ed. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and t he
product. NXP Semiconductors does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter m s and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing i n this document may be interpreted or
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other industrial or inte llectual property rights.
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Non-automotive qualified products — Unless this data sheet expressly
states that t his specific NXP Semiconductors prod uct is automotive qualified,
the product is not suit ab le for aut omotive u se. It is neit her qua lifi ed n or test ed
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclu sio n and/or use of
non-automotive qualifie d products in automot ive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and st andards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the obj ective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
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Product data sheet Rev. 01 — 22 April 2010 12 of 13
NXP Semiconductors BLA6H1011-600
LDMOS avionics power transistor
product for such au tomotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive appl ications beyond NXP Semiconductors’
standard warrant y and NXP Semiconductors’ product specifications.
12.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BLA6H1011-600
LDMOS avionics power transistor
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 22 April 2010
Document identifier: BLA6H1011-600_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 2
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6.1 Ruggedness in class-AB operation . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 4
7.1 Impedance information. . . . . . . . . . . . . . . . . . . 4
7.2 Performance curves . . . . . . . . . . . . . . . . . . . . . 4
7.3 Curves measured under Mode-S ELM
pulse-conditions . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13 Contact information. . . . . . . . . . . . . . . . . . . . . 12
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
