PD- 94094 IRF7325 HEXFET(R) Power MOSFET Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.8mm) Available in Tape & Reel VDSS ) RDS(on) max (m) ID -12V 24@VGS = -4.5V 33@VGS = -2.5V 7.8A 49@VGS = -1.8V 3.9A 6.2A Description New P-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 4 5 The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. D2 D2 SO-8 T o p V ie w Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -12 -7.8 -6.2 -39 2.0 1.3 16 8.0 -55 to + 150 V A W mW/C V C Thermal Resistance Symbol RJL RJA Parameter Junction-to-Drain Lead Junction-to-Ambient www.irf.com Typ. Max. Units --- --- 20 62.5 C/W 1 2/5/01 http://store.iiic.cc/ IRF7325 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -12 --- --- --- --- -0.40 17 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.007 --- --- --- --- --- --- --- --- --- 22 5.0 4.7 9.4 9.8 240 180 2020 520 330 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 24 VGS = -4.5V, ID = -7.8A m VGS = -2.5V, ID = -6.2A 33 49 VGS = -1.8V, ID = -3.9A -0.90 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -7.8A -1.0 VDS = -9.6V, VGS = 0V A -25 VDS = -9.6V, VGS = 0V, TJ = 70C -100 VGS = -8.0V nA 100 VGS = 8.0V 33 ID = -7.8A 7.5 nC VDS = -6.0V 7.0 VGS = -4.5V --- VDD = -6.0V ns --- ID = -1.0A --- RD = 6.0 --- VGS = -4.5V --- VGS = 0V --- pF VDS = -10V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- -2.0 --- --- -39 --- --- --- --- 36 28 -1.2 54 42 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.0A, VGS = 0V TJ = 25C, I F = -2.0A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by When mounted on 1 inch square copper board. max. junction temperature. Pulse width 400s; duty cycle 2%. 2 www.irf.com http://store.iiic.cc/ IRF7325 100 100 VGS -10V -7.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.2V 10 1 -1.2V 20s PULSE WIDTH TJ = 25 C 0.1 0.1 1 10 -1.2V 1 10 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics 100 10 T = 150 C J TJ = 25 C 1 V DS = -10V 20s PULSE WIDTH 2.0 1 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1.5 20s PULSE WIDTH TJ = 150 C 0.1 0.1 -VDS , Drain-to-Source Voltage (V) 0.1 1.0 VGS -10V -7.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.2V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP 2.5 3.0 ID = -7.8A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com Fig 4. Normalized On-Resistance Vs. Temperature 3 http://store.iiic.cc/ IRF7325 10 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd C, Capacitance(pF) 2500 Coss = Cds + Cgd Ciss 2000 1500 1000 Coss 500 Crss ID = -7.8A VDS = -9.6V VDS = -6V -VGS , Gate-to-Source Voltage (V) 3000 8 6 4 2 0 0 1 10 0 100 10 20 30 40 50 QG , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 TJ = 150 C -II D , Drain Current (A) -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10 1 TJ = 25 C 0.1 0.2 100us 10 1ms 10ms TA = 25 C TJ = 150 C Single Pulse V GS = 0 V 0.6 1.0 1.4 1 0.1 1.8 -VSD ,Source-to-Drain Voltage (V) 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com http://store.iiic.cc/ IRF7325 8.0 RD VDS -I D , Drain Current (A) VGS 6.0 D.U.T. RG + VDD VGS 4.0 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 2.0 td(on) tr t d(off) tf VGS 10% 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 P DM 0.02 1 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 http://store.iiic.cc/ 0.05 R DS (on) , Drain-to-Source On Resistance ( ) R DS(on) , Drain-to -Source On Resistance ( ) IRF7325 0.04 0.03 ID = -7.8A 0.02 0.01 0.0 2.0 4.0 6.0 8.0 0.08 0.06 VGS = -1.8V 0.04 VGS = -2.5V 0.02 10.0 VGS = -4.5V 0 2.0 4.0 -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage 6.0 8.0 10.0 -I D , Drain Current (A) Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG QGS 12V .2F .3F QGD D.U.T. +VDS VGS VG -3mA IG Charge ID Current Sampling Resistors Fig 14a. Basic Gate Charge Waveform 6 Fig 14b. Gate Charge Test Circuit www.irf.com http://store.iiic.cc/ IRF7325 100 80 0.8 ID = -250A Power (W) -V GS(th) Gate threshold Voltage (V) 1.0 60 40 0.6 20 0.4 0 -75 -50 -25 0 25 50 75 100 125 150 0.001 T J , Temperature ( C ) 0.010 0.100 1.000 10.000 100.000 Time (sec) Fig 16. Typical Power Vs. Time Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 7 http://store.iiic.cc/ IRF7325 SO-8 Package Details D 5 A 8 6 7 6 5 H 0.25 [.010] 1 2 3 A 4 MAX MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC 1.27 BAS IC e1 6X e e1 C .025 BAS IC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 y 0.10 [.004] 0.25 [.010] MAX K x 45 A 8X b MILLIMET ERS MIN A E INCHES DIM B A1 8X L 8X c 7 C A B F OOTPRINT NOT ES: 1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENSION: MILLIMET ER 3. DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENSION IS THE LENGTH OF LEAD F OR S OLDERING T O A S UBST RATE. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) INTERNAT IONAL RECTIFIER LOGO YWW XXXX F7101 DATE CODE (YWW) Y = LAS T DIGIT OF THE YEAR WW = WEEK LOT CODE PART NUMBER 8 www.irf.com http://store.iiic.cc/ IRF7325 Tape and Reel T E R M IN A L N U M B E R 1 1 2 .3 ( .48 4 ) 1 1 .7 ( .46 1 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1. 33 0.0 0 (1 2 .9 9 2 ) M AX . 1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 2/01 www.irf.com 9 http://store.iiic.cc/