IRF7325 - International Rectifier

Parameter Max. Units

VDS Drain- Source Voltage -12 V

ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -7.8

ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -6.2 A

IDM Pulsed Drain Current -39

PD @TA = 25°C Power Dissipation 2.0

PD @TA = 70°C Power Dissipation 1.3

Linear Derating Factor 16 mW/°C

VGS Gate-to-Source Voltage ± 8.0 V

TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

2/5/01

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IRF7325

HEXFET® Power MOSFET

PD- 94094

Absolute Maximum Ratings

Symbol Parameter Typ. Max. Units

RθJL Junction-to-Drain Lead –– – 20

RθJA Junction-to-Ambient ––– 62.5 °C/W

Thermal Resistance

VDSS RDS(on) max (mΩ)Ω)

Ω)Ω)

Ω) ID

-12V 24@VGS = -4.5V ±7.8A

33@VGS = -2.5V ±6.2A

49@VGS = -1.8V ±3.9A

SO-8

Top View

Description

● Trench Technology

● Ultra Low On-Resistance

● Dual P-Channel MOSFET

● Low Profile (<1.8mm)

● Available in Tape & Reel

New P-Channel HEXFET power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance

per silicon area. This benefit, combined with the

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infrared, or wave soldering techniques.

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Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) showing the

ISM Pulsed Source Current integral reverse

(Body Diode) p-n junction diode.

VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V 

trr Reverse Recovery Time ––– 36 54 ns TJ = 25°C, I F = -2.0A

Qrr Reverse Recovery Charge ––– 28 42 nC di/dt = -100A/µs 

Source-Drain Ratings and Characteristics

––– –––

––– ––– -39

-2.0 A

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage -12 ––– –– – V VGS = 0V, ID = -250µA

∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.007 ––– V/°C Reference to 25°C, ID = -1mA

––– ––– 24 VGS = -4.5V, ID = -7.8A 

––– ––– 33 VGS = -2.5V, ID = -6.2A 

––– ––– 49 VGS = -1.8V, ID = -3.9A 

VGS(th) Gate Threshold Voltage -0.40 ––– -0.90 V VDS = VGS, ID = -250µA

gfs Forward Transconductance 17 ––– ––– S VDS = -10V, ID = -7.8A

––– ––– -1.0 VDS = -9.6V, VGS = 0V

––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 70°C

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -8.0V

Gate-to-Source Reverse Leakage ––– – –– 1 00 VGS = 8.0V

QgTotal Gate Charge –– – 22 33 ID = -7.8A

Qgs Gate-to-Source Charge ––– 5.0 7.5 nC VDS = -6.0V

Qgd Gate-to-Drain ("Miller") Charge ––– 4.7 7.0 VGS = -4.5V

td(on) Turn-On Delay Time ––– 9.4 ––– VDD = -6.0V

trRise Time ––– 9.8 ––– ID = -1.0A

td(off) Turn-Off Delay Time ––– 240 ––– RD = 6.0Ω

tfFall Time ––– 180 ––– VGS = -4.5V 

Ciss Input Capacitance ––– 2020 ––– VGS = 0V

Coss Output Capacitance ––– 520 ––– pF VDS = -10V

Crss Reverse Transfer Capacitance ––– 33 0 – –– ƒ = 1.0MHz

IGSS

µA

mΩ

RDS(on) Static Drain-to-Source On-Resistance

IDSS Drain-to-Source Leakage Current

 When mounted on 1 inch square copper board.

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Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

-60 -40 -20 0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

-4.5V

-7.8A

0.1

100

0.1 1 10

s PULSE WIDTH

T = 25 C

J°

TOP

BOTTOM

VGS

-10V

-7.0V

-4.5V

-3.0V

-2.5V

-1.8V

-1.5V

-1.2V

-V , Drain-to-Source Volta

e (V)

-I , Drain-to-Source Current (A)

-1.2V

0.1

100

0.1 1 10

s PULSE WIDTH

T = 150 C

J°

TOP

BOTTOM

VGS

-10V

-7.0V

-4.5V

-3.0V

-2.5V

-1.8V

-1.5V

-1.2V

-V , Drain-to-Source Volta

e (V)

-I , Drain-to-Source Current (A)

-1.2V

0.1

100

1.0 1.5 2.0 2.5 3.0

V = -10V

20µs PULSE WIDTH

-V , Gate-to-Source Volta

e (V)

-I , Drain-to-Source Current (A)

T = 25 C

J°

T = 150 C

J°

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

010 20 30 40 50

Q , Total Gate Charge (nC)

-V , Gate-to-Source Voltage (V)

I =

D-7.8A

V =-6V

V =-9.6V

0.1

100

0.2 0.6 1.0 1.4 1.8

-V ,Source-to-Drain Volta

e (V)

-I , Reverse Drain Current (A)

V = 0 V

T = 25 C

J°

T = 150 C

J°

100

0.1 1 10 100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pulse

T = 150 C

= 25 C

°°

-V , Drain-to-Source Volta

e (V)

-I , Drain Current (A)I , Drain Current (A)

100us

1ms

10ms

110 100

-VDS, Drain-to-Source Voltage (V)

500

1000

1500

2000

2500

3000

C, Capacitance(pF)

Coss

Crss

Ciss

VGS = 0V, f = 1 MHZ

Ciss = C

gs + Cgd, C

ds SHORTED

Crss

= C

Coss

= C

ds + Cgd

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 9. Maximum Drain Current Vs.

Case Temperature

0.1

100

0.00001 0.0001 0.001 0.01 0.1 1 10

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

1 2

JDM thJA A

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

25 50 75 100 125 150

0.0

2.0

4.0

6.0

8.0

T , Case Temperature ( C)

-I , Drain Current (A)

VDS

VGS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

VDD

RGD.U.T.

90%

10%

d(on)

d(off)

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

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Fig 13. Typical On-Resistance Vs.

Drain Current

Fig 12. Typical On-Resistance Vs.

Gate Voltage

Fig 14b. Gate Charge Test Circuit

Fig 14a. Basic Gate Charge Waveform

Charge

D.U.T. V

-3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

0.0 2.0 4.0 6.0 8.0 10.0

-VGS, Gate -to -Source Voltage (V)

0.01

0.02

0.03

0.04

0.05

RDS(on), Drain-to -Source On Resistance ( Ω)

ID = -7.8A

2.0 4.0 6.0 8.0 10.0

-ID , Drain Current (A)

0.02

0.04

0.06

0.08

RDS (on) , Drain-to-Source On Resistance ( Ω)

VGS = -2.5V

VGS = -1.8V

VGS = -4.5V

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Fig 15. Typical Vgs(th) Vs.

Junction Temperature Fig 16. Typical Power Vs. Time

-75 -50 -25 0 25 50 75 100 125 150

TJ , Temperature ( °C )

0.4

0.6

0.8

1.0

-VGS(th) Gate threshold Voltage (V)

ID = -250µA

0.001 0.010 0.100 1.000 10.000 100.000

Time (sec)

100

Power (W)

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SO-8 Package Details

SO-8 Part Marking

.189

.1497

0°

.013

.050 BASIC

.0532

.0040

.2284

.0099

.016

.1968

.1574

8°

.020

.0688

.0098

.2440

.0196

.050

4.80

3.80

0.33

1.35

0.10

5.80

0.25

0.40

0°

1.27 BASIC

5.00

4.00

0.51

1.75

0.25

6.20

0.50

1.27

MIN MAX MILLIMETERSINCHES MIN MAX

DIM

8°

c .0075 .0098 0.19 0.25

.025 BASIC 0.635 BASIC

D B

0.25 [.010] A

K x 45°

8X L 8X c

0.25 [.010] C A B

e1 A

8X b

0.10 [.004]

4312

FOOTPRINT

8X 0. 72 [.02 8]

6.46 [.25 5]

3X 1. 27 [.05 0]

4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA.

NOTES:

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

2. CONTROLLI NG DIMENSION: MILLIMETER

3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].

7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO

A SUBSTRATE.

MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].

8X 1. 78 [.07 0]

EXAMPLE: THIS IS AN IRF7101 (MOSFET)

INTERNATIONAL

RECTIFIER

LOGO

F7101

YWW

XXXX

PART N UMBER

LOT CODE

WW = WEEK

Y = LAST DIGIT OF THE YEAR

DATE CODE (YWW)

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IRF7325

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33 0.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CO NTRO LLING DIMENSION : MILLIM ETER.

2. O U TL IN E CO N FO R MS TO E IA-481 & EIA -541.

FEED DIRECTION

TERM INAL NUM BER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIM ENSION : M ILLIM ETER.

2. ALL DIM ENSION S ARE SHOW N IN M ILLIM ETERS(INCHES).

3. O U TLIN E CO N FORM S TO EIA-481 & EIA-541.

Tape and Reel

Data and specifications subject to change without notice.

This product has been designed and qualified for the consumer market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 2/01

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