JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO -92 Plastic-Encapsulate Transistors
MCR 100- 6,- 8 Silicon Planar PNPN Thyristor
MAIN FEATURES
Symbol value unit
IT(RMS) 0.8 A
MCR100-6 400
VDRM/VRRM MCR100-8 600
V
TJ Junction Temperature -40 to 125 ℃
Tstg Storage Temperature -55 to 150 ℃
DESCRIPTION
Logic level sensitive gate triac intended to be interfaced directly to microcontrollers, logic integrated circuits
and other low power gate trigger circuits.
FEATURES
z Blocking voltage to 400 V (MCR100-6)
z RMS on-state current to 0.8 A
z General purpose switching
APPLICATIONS
z General purpose switching
z Phase control applications
z Solid state relays.
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
On state voltage * VTM I
TM=1A 1.7 V
Gate trigger voltage VGT V
AK=7V 0.8 V
Peak Repetitive forward and reverse
blocking voltage MCR100-6
MCR100-8
VDRM
AND
VRRM
IDRM= 10 μA
400
600
V
Peak forward or reverse blocking
Current
IDRM
IRRM
V
AK= Rated
V
DRM or VRRM 10 µA
Holding current IH I
HL=20mA ,VAK =7V 5 mA
A2 5 15 µA
A1 15 30 µA
A 30 80 µA
Gate trigger current IGT
B
VAK=7V
80 200 µA
* Forward current applied for 1 ms maximum duration，duty cycle≤1%。
1 2 3
TO-92
1.KATHODE
2.GATE
3.ANODE
Typical Characteristics MCR100-6,-8
