INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
IRG7PH35UD1PbF
IRG7PH35UD1-EP
1www.irf.com
02/21/2012
E
G
n-channel
C
VCES = 1200V
I NOMINAL = 20A
TJ(max) = 150°C
VCE(on) typ. = 1.9V
Benefits
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low VCE(on), low switching losses
and Ultra-low VF
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
• Low EMI
Gate Collector Emitter
TO-247AC
IRG7PH35UD1PbF
TO-247AD
IRG7PH35UD1-EP
GCE
C
GCE
C
Features
• Low VCE (ON) trench IGBT Technology
• Low Switching Losses
• Square RBSOA
• Ultra-Low VF Diode
• 1300Vpk Repetitive Transient Capacity
• 100% of the Parts Tested for ILM
• Positive VCE (ON) Temperature Co-Efficient
• Tight Parameter Distribution
• Lead Free Package
Absolute Maximum Ratings
Parameter Max. Units
V
Collector-to-Emitter Voltage 1200 V
I
@ T
= 25°C Continuous Collector Current 50
I
@ T
= 100°C Continuous Collector Current 25
I
Nominal Current 20
I
CM
Pulse Collector Current, V
GE
=15V
dg
150 A
I
LM
Clamped Inductive Load Current, V
GE
=20V
c
80
I
@ T
= 25°C Diode Continous Forward Current 50
I
@ T
= 100°C Diode Continous Forward Current 25
I
Diode Maximum Forward Current
d
80
V
Continuous Gate-to-Emitter Voltage ±30 V
P
@ T
= 25°C Maximum Power Dissipation 179 W
P
@ T
= 100°C Maximum Power Dissipation 71
T
Operating Junction and -55 to +150
T
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
JC
(IGBT) Thermal Resistance Junction-to-Case-(each IGBT)
f
––– ––– 0.70
R
JC
(Diode) Thermal Resistance Junction-to-Case-(each Diode)
f
––– ––– 1.35 °C/W
R
CS
Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
R
JA
Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 –––
PD - 97455A