PD - 97455A IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features * * * * * * * * * Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for ILM Positive VCE (ON) Temperature Co-Efficient Tight Parameter Distribution Lead Free Package C VCES = 1200V I NOMINAL = 20A G TJ(max) = 150C E VCE(on) typ. = 1.9V n-channel Benefits C * Device optimized for induction heating and soft switching applications * High Efficiency due to Low VCE(on), low switching losses and Ultra-low VF * Rugged transient performance for increased reliability * Excellent current sharing in parallel operation * Low EMI C GC E TO-247AC IRG7PH35UD1PbF G Gate E GC TO-247AD IRG7PH35UD1-EP C Collector E Emitter Absolute Maximum Ratings Parameter Max. Units 1200 V V CES Collector-to-Emitter Voltage IC @ TC = 25C Continuous Collector Current 50 IC @ TC = 100C Continuous Collector Current 25 INOMINAL ICM Nominal Current ILM Clamped Inductive Load Current, VGE =20V IF @ TC = 25C Diode Continous Forward Current IF @ TC = 100C IFM Diode Continous Forward Current Diode Maximum Forward Current V GE Continuous Gate-to-Emitter Voltage 30 V PD @ TC = 25C Maximum Power Dissipation 179 W Pulse Collector Current, VGE =15V PD @ TC = 100C Maximum Power Dissipation TJ Operating Junction and TST G Storage Temperature Range dg 20 150 c A 80 50 25 d 80 71 -55 to +150 C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf*in (1.1 N*m) Thermal Resistance Parameter Min. Typ. Max. --- --- 0.70 --- --- 1.35 Thermal Resistance, Case-to-Sink (flat, greased surface) --- 0.24 --- Thermal Resistance, Junction-to-Ambient (typical socket mount) --- 40 --- RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) RJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) RCS RJA 1 f f Units C/W www.irf.com 02/21/2012 IRG7PH35UD1PbF/IRG7PH35UD1-EP Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units 1200 -- -- V VGE = 0V, IC = 100A Repetitive Transient Collector-to-Emitter Voltage -- -- 1300 V VGE = 0V, TJ = 75C, PW 10s V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage -- 1.2 -- VCE(on) Collector-to-Emitter Saturation Voltage -- 1.9 2.2 -- 2.3 -- V(BR)CES Collector-to-Emitter Breakdown Voltage V(BR)Transient Conditions e IC = 20A, VGE = 15V, TJ = 150C VGE(th) Gate Threshold Voltage 3.0 -- 6.0 V VCE = VGE, IC = 600A gfe ICES Forward Transconductance -- 22 -- S VCE = 50V, IC = 20A, PW = 30s Collector-to-Emitter Leakage Current -- 1.0 100 A VGE = 0V, VCE = 1200V -- 120 -- VFM Diode Forward Voltage Drop -- 1.15 1.26 -- 1.08 -- -- -- 100 IGES Gate-to-Emitter Leakage Current e V/C VGE = 0V, IC = 1mA (25C-150C) IC = 20A, VGE = 15V, TJ = 25C V VGE = 0V, VCE = 1200V, TJ = 150C V IF = 20A IF = 20A, TJ = 150C nA VGE = 30V Switching Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. -- 85 130 Qg Total Gate Charge (turn-on) Qge Gate-to-Emitter Charge (turn-on) -- 15 20 Qgc Gate-to-Collector Charge (turn-on) -- 35 50 Units Conditions IC = 20A nC VGE = 15V VCC = 600V IC = 20A, VCC = 600V, VGE = 15V Eoff Turn-Off Switching Loss -- 620 850 J RG = 10, L = 200H,LS = 150nH, TJ = 25C Energy losses include tail td(off) Turn-Off delay time -- 160 180 tf Fall time -- 80 105 ns IC = 20A, VCC = 600V, VGE = 15V RG = 10, L = 200H,LS = 150nH, TJ = 25C IC = 20A, VCC = 600V, VGE=15V Eoff Turn-Off Switching Loss -- 1120 -- J RG = 10, L = 200H,LS = 150nH, TJ = 150C Energy losses include tail td(off) Turn-Off delay time -- 190 -- tf Fall time -- 210 -- Cies Input Capacitance -- 1940 -- Coes Output Capacitance -- 120 -- VCC = 30V Cres Reverse Transfer Capacitance -- 40 -- f = 1.0Mhz TJ = 150C, IC = 80A RBSOA Reverse Bias Safe Operating Area FULL SQUARE ns IC = 20A, VCC = 600V, VGE = 15V RG = 10, L = 200H,LS = 150nH, TJ = 150C pF VGE = 0V VCC = 960V, Vp =1200V Rg = 10, VGE = +20V to 0V Notes: VCC = 80% (VCES), VGE = 20V, RG = 10 Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. R is measured at TJ approximately 90C. FBSOA operating conditions only. 2 www.irf.com IRG7PH35UD1PbF/IRG7PH35UD1-EP 50 200 175 40 150 125 Ptot (W) IC (A) 30 20 100 75 50 10 25 0 0 25 50 75 100 125 150 25 50 75 T C (C) 125 150 Fig. 2 - Power Dissipation vs. Case Temperature 1.0 1000 IC = 600A 0.9 100 0.8 IC (A) VGE(th), Gate Threshold Voltage (Normalized) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 0.7 10 0.6 0.5 1 25 50 75 100 125 150 10 100 T J , Temperature (C) 10000 Fig. 4 - Reverse Bias SOA TJ = 150C; VGE = 20V 80 80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 60 50 70 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 60 50 ICE (A) 70 40 40 30 30 20 20 10 10 0 0 0 2 4 6 VCE (V) 8 10 Fig. 5 - Typ. IGBT Output Characteristics TJ = -40C; tp = 30s www.irf.com 1000 VCE (V) Fig. 3 - Typical Gate Threshold Voltage (Normalized) vs. Junction Temperature ICE (A) 100 T C (C) 0 2 4 6 8 10 VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 30s 3 IRG7PH35UD1PbF/IRG7PH35UD1-EP 80 80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 70 60 60 50 IF (A) ICE (A) 50 70 40 40 30 30 20 20 10 10 0 25C 150C 0 0 2 4 6 8 10 0.0 0.5 1.0 Fig. 8 - Typ. Diode Forward Voltage Drop Characteristics 8 8 7 7 6 6 VCE (V) VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 150C; tp = 30s ICE = 10A ICE = 20A 4 5 ICE = 10A ICE = 20A ICE = 40A 4 ICE = 40A 3 3 2 2 1 1 4 8 12 16 5 20 10 80 7 70 VCE (V) IC, Collector-to-Emitter Current (A) 8 ICE = 10A ICE = 20A ICE = 40A 5 20 Fig. 10 - Typical VCE vs. VGE TJ = 25C Fig. 9 - Typical VCE vs. VGE TJ = -40C 6 15 VGE (V) VGE (V) 4 3 2 60 50 40 TJ = 150C 30 20 T J = 25C 10 0 1 5 10 15 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 150C 4 2.0 VF (V) VCE (V) 5 1.5 20 4 5 6 7 8 9 10 VGE, Gate-to-Emitter Voltage (V) Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 30s www.irf.com IRG7PH35UD1PbF/IRG7PH35UD1-EP 2200 1000 2000 1800 tF Swiching Time (ns) Energy (J) 1600 EOFF 1400 1200 1000 800 tdOFF 100 600 400 200 10 0 10 20 30 40 50 0 10 20 30 40 IC (A) IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 150C; L = 680H; VCE = 600V, RG = 10; VGE = 15V 2800 Fig. 14 - Typ. Switching Time vs. IC TJ = 150C; L = 680H; VCE = 600V, RG = 10; VGE = 15V 10000 2600 Swiching Time (ns) 2400 Energy (J) 2200 tdOFF 1000 EOFF 2000 1800 1600 tF 100 1400 1200 1000 10 0 25 50 75 100 125 0 20 Fig. 15 - Typ. Energy Loss vs. RG TJ = 150C; L = 680H; VCE = 600V, ICE = 20A; VGE = 15V 80 100 120 Fig. 16 - Typ. Switching Time vs. RG TJ = 150C; L = 680H; VCE = 600V, ICE = 20A; VGE = 15V 16 VGE, Gate-to-Emitter Voltage (V) 10000 Cies Capacitance (pF) 60 RG () Rg () 1000 100 Coes Cres 14 VCES = 600V VCES = 400V 12 10 8 6 4 2 0 10 0 100 200 300 400 500 VCE (V) Fig. 17 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz www.irf.com 40 600 0 20 40 60 80 100 Q G, Total Gate Charge (nC) Fig. 18 - Typical Gate Charge vs. VGE ICE = 20A; L = 2.4mH 5 IRG7PH35UD1PbF/IRG7PH35UD1-EP 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 J 0.01 R1 R1 J 1 1E-005 R3 R3 Ri (C/W) i (sec) R4 R4 C 2 1 2 3 3 Ci= iRi Ci iRi SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 R2 R2 0.0001 4 4 0.017 0.000013 0.218 0.000141 0.299 0.002184 0.177 0.013107 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.1 0.10 0.05 J 0.02 0.01 R1 R1 J 1 R2 R2 R3 R3 C 2 1 2 3 3 Ci= iRi Ci iRi 0.01 1E-005 0.0001 4 4 0.00756 0.000005 0.56517 0.000677 0.54552 0.003514 0.25085 0.019551 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 Ri (C/W) i (sec) R4 R4 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 20. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 6 www.irf.com IRG7PH35UD1PbF/IRG7PH35UD1-EP L L DUT 0 80 V + VCC VCC - 1K DUT VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit C force diode clamp / DUT 100K L D1 22K C sense -5V DUT / DRIVER DUT G force VCC 0.0075F Rg E sense E force Fig.C.T.4 - BVCES Filter Circuit Fig.C.T.3 - Switching Loss Circuit 800 40 tf 700 35 600 30 90% ICE 25 400 20 300 15 5% V CE 200 10 5% ICE 100 5 0 -100 -0.5 ICE (A) VCE (V) 500 0 Eof f Loss 0 0.5 1 -5 1.5 2 time(s) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 150C using Fig. CT.3 www.irf.com 7 IRG7PH35UD1PbF/IRG7PH35UD1-EP TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information (;$03/( 7+,6,6$1,5)3( :,7+$66(0%/< /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(+ 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 ,5)3( + '$7(&2'( <($5 :((. /,1(+ TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRG7PH35UD1PbF/IRG7PH35UD1-EP TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information (;$03/( 7+,6,6$1,5*3%.'( :,7+$66(0%/< /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(+ 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH 3$57180%(5 ,17(51$7,21$/ 5(&7,),(5 /2*2 + $66(0%/< /27&2'( '$7(&2'( <($5 :((. /,1(+ TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 02/2012 www.irf.com 9