SPD09P06PLG - Infineon Technologies

2008-07-29

Rev 2.5 Page 1

SPD09P06PL G

SIPMOS





=Power-Transistor Product Summary

VDS -60 V

RDS

(

)

0.25



ID-9.7 A

Feature



P-Channel



Enhancement mode



Logic Level prueb



175°C operating temperature



Avalanche rated



dv/dtrated

PG-TO252-3

Gate

pin1

Drain

pin 2

Source

pin 3

Type Package

SPD09P06PL G PG-TO252-3

Maximum Ratings,at T

= 25 °C, unless otherwise specified

Parameter Symbol Value Unit

Continuous drain current

TC=25°C

TC=100°C

-9.7

-6.8

Pulsed drain current

TC=25°C

ID puls -38.8

Avalanche energy, single pulse

ID=-9.7 A , VDD=-25V, RGS=25



EAS 70 mJ

Avalanche energy, periodic limited by T

max EAR 4.2

Reverse diode dv/dt

IS=-9.7A, VDS=-48, di/dt=200A/µs, Tjmax=175°C

dv/dt6 kV/µs

Gate source voltage VGS ±20 V

Power dissipation

TC=25°C

Ptot 42 W

Operating and storage temperature T

,Tst

-55... +175 °C

IEC climatic category; DIN IEC 68-1 55/175/56

Lead free

Yes

• P-channel

• Enhancement mode

• Logic Level

• 175°C operating temperature

• Avalanche rated

• dv/dt rated

• Pb-free lead plating; RoHS compliant

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2008-07-29

Rev 2.5 Page 2

SPD09P06PL G

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - case RthJC - - 3.6 K/W

Thermal resistance, junction - ambient, leaded RthJA - - 100

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 1)

RthJA

Electrical Characteristics, at T

= 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0V, ID=-250µA

V(BR)DSS -60 - - V

Gate threshold voltage, VGS = VDS

ID=-250µA

VGS(th) -1 -1.5 -2

Zero gate voltage drain current

VDS=-60V, VGS=0V, Tj=25°C

VDS=-60V, VGS=0V, Tj=150°C

IDSS

-0.1

-10

-1

-100

µA

Gate-source leakage current

VGS=-20V, VDS=0V

IGSS - -10 -100 nA

Drain-source on-state resistance

VGS=-4.5V, ID=-5.4A

RDS(on) - 0.3 0.4



Drain-source on-state resistance

VGS=-10V, ID=-6.8A

RDS(on) - 0.2 0.25

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

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2008-07-29

Rev 2.5 Page 3

SPD09P06PL G

Electrical Characteristics, at T

= 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance gfs VDS



2*ID*RDS(on)max ,

ID=-5.4

1.8 3.5 - S

Input capacitance Ciss VGS=0V, VDS=-25V,

f=1MHz

- 360 450 pF

Output capacitance Coss - 103 130

Reverse transfer capacitance Crss - 40 50

Turn-on delay time td(on) VDD=-30V, VGS=-4.5V,

ID=-5.4, RG=6



- 11 17 ns

Rise time trVDD=-30V, VGS=-4.5V,

ID=-5.4A, RG=6



- 168 252

Turn-off delay time td(off) - 49 74

Fall time tf- 89 134

Gate Charge Characteristics

Gate to source charge Qgs VDD=-48V, ID=-9.7A - 1.3 2 nC

Gate to drain charge Qgd - 5.1 7.5

Gate charge total QgVDD=-48V, ID=-9.7A,

VGS=0 to -10V

- 14 21

Gate plateau voltage V

lateau

)

VDD=-48V, ID=-9.7A - -4.1 - V

Reverse Diode

Inverse diode continuous

forward current

ISTC=25°C - - -9.7 A

Inverse diode direct current,

pulsed

ISM - - -38.8

Inverse diode forward voltage VSD VGS=0V, IF=-9.7A - -1.1 -1.4 V

Reverse recovery time trr VR=-30V, IF=lS,

diF/dt=100A/µs

- 52 76 ns

Reverse recovery charge Qrr - 64 96 nC

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2008-07-29

Rev 2.5 Page 4

SPD09P06PL G

1 Power dissipation

Ptot = f(TC)

0 20 40 60 80 100 120 140 160 °C 190

50 SPD09P06PL

tot

2 Drain current

ID=f(TC)

parameter: VGS



10 V

0 20 40 60 80 100 120 140 160 °C 190

-1

-2

-3

-4

-5

-6

-7

-8

-9

-11 SPD09P06PL

3 Safe operating area

ID= f ( VDS )

parameter : D = 0 , TC = 25 °C

-10 -1 -10 0-10 1-10 2

VDS

-1

-10

SPD09P06PL

DS(on)

10 ms

1 ms

100 µs

tp = 11.0µs

4 Transient thermal impedance

ZthJC = f(tp)

parameter : D=tp/T

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0

-4

-3

-2

-1

K/W

SPD09P06PL

ZthJC

single pulse

0.01

0.02

0.05

0.10

0.20

D = 0.50

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2008-07-29

Rev 2.5 Page 5

SPD09P06PL G

5 Typ. output characteristic

ID = f (VDS); Tj=25°C

parameter: tp= 80 µs

0 -2 -4 -6 -8 V-12

VDS

-2

-4

-6

-8

-10

-12

-14

-16

-18

-20

-24 SPD09P06PL

VGS [V]

a -2.0

b -2.5

c -3.0

d -3.5

e -4.0

f -4.5

g -5.0

h -5.5

i -6.0

j -7.0

Ptot = 42W

k -8.0

6 Typ. drain-source on resistance

RDS(on) = f(ID)

parameter: VGS

0 -2 -4 -6 -8 -10 -12 -14 -16 A-20

0.1

0.2

0.3

0.4

0.5

0.6



0.8 SPD09P06PL

RDS(on)

VGS [V] =

-3.0

-3.5

-4.0

-4.5

-5.0

-5.5

-6.0

-7.0

-8.0

7 Typ. transfer characteristics

ID= f ( VGS ); VDS



2 x ID x RDS(on)max

parameter: tp = 80 µs

0 1 2 3 4 5 6 V 8

VGS

8 Typ. forward transconductance

gfs = f(ID); Tj=25°C

parameter: gfs

0 1 2 3 4 5 6 7 8 V 10

0.5

1.5

2.5

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2008-07-29

Rev 2.5 Page 6

SPD09P06PL G

9 Drain-source on-state resistance

RDS(on) = f(Tj)

parameter : ID = -6.8 A, VGS = -10 V

-60 -20 20 60 100 140 °C 200

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.45

0.5

0.55

0.6



0.75

SPD09P06PL

RDS(on)

typ

98%

10 Gate threshold voltage

VGS(th) = f (Tj)

parameter: VGS = VDS,ID = -250 µA

-60 -20 20 60 100 °C 180

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

2.4

VGS(th)

typ.

98 %

2 %

11 Typ. capacitances

C = f(VDS)

parameter: VGS=0V, f=1 MHz

0 -5 -10 -15 -20 V -30

VDS

Ciss

Coss

Crss

12 Forward character. of reverse diode

IF = f (VSD)

parameter: T

, tp= 80 µs

0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V-3

VSD

-1

-10

SPD09P06PL

Tj = 25 °C typ

Tj = 25 °C (98%)

Tj = 175 °C typ

Tj = 175 °C (98%)

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2008-07-29

Rev 2.5 Page 7

SPD09P06PL G

13 Typ. avalanche energy

EAS = f(Tj)

par.: ID = -9.7 A , VDD = -25 V, RGS = 25



25 45 65 85 105 125 145 °C 185

EAS

14 Typ. gate charge

VGS =f (QGate)

parameter: ID = -9.7 A pulsed

0 4 8 12 16 20 nC 28

QGate

-2

-4

-6

-8

-10

-12

-16 SPD09P06PL

0,8 VDS max

DS max

0,2

15 Drain-source breakdown voltage

V(BR)DSS = f(Tj)

-60 -20 20 60 100 140 °C 200

-54

-56

-58

-60

-62

-64

-66

-68

-72

SPD09P06PL

(BR)DSS

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Rev 2.5 page 8 2008-07-29

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SPD09P06PL G

Package outline: PG-TO252-3

2008-07-29

Rev 2.5 Page 8

SPD09P06PL G

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions

or characteristics. With respect to any examples or hints given herein, any typical values stated

herein and/or any information regarding the application of the device, Infineon Technologies

hereby disclaims any and all warranties and liabilities of any kind, including without limitation,

warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact

the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Office. Infineon

Technologies components may be used in life-support devices or systems only with the express

written approval of Infineon Technologies, if a failure of such components can reasonably be

expected to cause the failure of that life-support device or system or to affect the safety or

effectiveness of that device or system. Life support devices or systems are intended to be

implanted in the human body or to support and/or maintain and sustain and/or protect human life.

If they fail, it is reasonable to assume that the health of the user or other persons may be

endangered.

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