T4-LDS-0309, Rev. 1 (8/7/13) ©2013 Microsemi Corporation Page 1 of 7
2N6286 and 2N6287
Availa ble on
commercial
versions
PNP Darlington Power Silicon Transistor
Qualified per MIL-PRF-19500/505
Qualified Levels:
JAN, JANTX, and
JANTXV
DESCRIPTION
This high speed PNP transistor is rated at 20 amps and is military qualified up to a JANTXV
level. This TO-204AA isolated package features a 180 degree lead orientation.
TO-204AA (TO-3)
Package
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
JEDEC registered 2N6286 and 2N6287
JAN, JANTX, and J A NTXV qualifications are available per MIL-PRF-19500/505
RoHS compliant versions available (commercial grade only)
APPLICATIONS / BENEFITS
Military, space and other high reliability applications
High frequency response
TO-204AA case with isolated terminals
MAXIMUM RATINGS @ TC = +25 oC unless otherwise noted
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +175
oC
Thermal Resi stan ce Jun ction-to-Case
RӨJC
0.855
oC/W
Collector Current
IC
-20
A
Collector-Emitter Voltage 2N6286
2N6287
VCEO -80
-100
V
Collector-Base Voltage 2N6286
2N6287
VCBO -80
-100
V
Emitter-Base Voltage
VEBO
-7
V
Total Power Dissipation @ TC = +25
o
C
(1)
@ TC = +100
o
C
PT 175
87.5
W
Notes: 1. Derate linearl y 1.0 W/oC above TC > +25 oC
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2N6286 and 2N6287
MECHANICAL and PACKAGING
CASE: Industry standard TO-204AA (TO-3), hermetically sealed, 0.040 inch diameter pins
FINISH: Solder dipped tin-lead over nickel plated alloy 52 or RoHS compliant matte-tin plating. Solderable per MIL-STD-750
method 2026.
POLARITY: PNP (see schematic)
MOUNTING HARDWARE: Consult factory for optional insulator and sheet metal screws
WEIGHT: Approximately 15 grams
See package dimensions on last page.
PART NOMENCLATURE
JAN 2N6286 (e3)
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
RoHS Compli ance
e3 = RoHS Compliant (available
on commercial grade only)
Blank = non-RoHS Compliant
SYMBOLS & DEFINITIONS
Symbol
Definition
IB
Base current: The value of the dc current into the base terminal.
IC
Collector current: The value of the dc current into the collector terminal.
IE
Emitter current: The value of the dc current into the emitter terminal.
TC
Case temperature: The temperature measured at a specified location on the case of a device.
VCB
Collector-bas e vo lt age: The dc voltage between the collector and the base.
VCBO
Collector-base volta ge, ba se open: The voltage between the collector and base terminals when the emitter terminal is
open-circuited.
VCC
Collector-s upp l y voltage : The supply voltage applied to a circuit connected to the collector.
VCEO
Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the
base terminal is open-circuited.
VEB
Emitter-base voltage: The dc voltage between the emitter and the base.
VEBO Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the
collector terminal open-circuited.
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2N6286 and 2N6287
ELECTRICA L CHARACTERISTICS @ TA = +25 oC unless other wise note d
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = -100 mA
2N6286
2N6287
V(BR)CEO
-80
-100
V
Collector-Emitter Cutoff Current
VCE = -40 V
V
CE
= -50 V
2N6286
2N6287
ICEO
-1.0
-1.0
mA
Collector-Emitter Cutoff Current
VCE = -80 V, VBE = +1.5 V
VCE = -100 V, VBE = +1.5 V
2N6286
2N6287 ICEX
10
10
µA
Emitter-Base Cutoff Current
VEB = -7.0 V
IEBO
-2.5 mA
ON CHARACTERISTICS
Forward-Current Transfer Ratio
IC = -1.0 A, VCE = -3.0 V
IC = -10 A, VCE = -3.0 V
IC = -20 A, VCE = -3.0 V
hFE
1,500
1,250
300
18,000
Collector-Emitter Saturation Voltage
IC = -20 A, IB = -200 mA
I
C
= -10 A, I
B
= -40 mA
VCE(sat)
-3.0
-2.0
V
Base-Emitter Saturation Voltage
IC = -20 A, IB = -200 mA
VBE(sat)
-4.0
V
Base-Emitter Voltage Non-saturated
VCE = -3. 0 V, IC = -10 A
VBE -2.8 V
DYNAMIC CHARACTERISTICS
Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = -10 A, VCE = -3.0 V, f = 1 kHz
hfe
300
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = -10 A, VCE = -3.0 V, f = 1 MHz
|hfe|
8
80
Output Capacitance
VCB = -10 V, IE = 0, 100 kHz ≤ f ≤ 1 MHz
Cobo
400
pF
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2N6286 and 2N6287
ELECTRICA L CHARACTERISTICS @ TC = 25 oC unless otherwise noted. (continued)
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = -30 V, IC = -10 A; IB= -40 mA
ton
2.0
µs
Turn-Off Time
VCC = -30 V, IC = -10 A; IB1= IB2 = -40 mA
toff
10
µs
SAFE OPERATING AREA (See figures 1 an d 2 and MIL-STD-750,Test Method 3053)
DC Tests
TC = +25 °C, t = 1 second, 1 Cycle
Test 1
VCE = -8.75 V, IC = -20 A
Test 2
VCE = -30 V, IC = -5.8 A
Test 3
VCE = -80 V, IC = -100 mA (2N6286)
VCE = -100 V, IC = -100 mA (2N6287)
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2N6286 and 2N6287
SAFE OPERATING AREA
VCECollector to Emitter Voltage (Volts)
FIGURE 1
Maximum Safe Operating Area Graph
(continuous dc)
IC = Collector Current (Amperes)
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2N6286 and 2N6287
SAFE OPERATING AREA (continued)
L Inductance (Millihenries)
FIGURE 2
Safe Operating Area For Switching Between Saturation And Cutoff
(unclamped inductive load).
IC = Collector Current (Amperes)
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2N6286 and 2N6287
PACKAGE DIMENSIONS
NOTES: 1. Dimensions are in inches. Millimeters are given for information only.
2. Body contour is optional within zone defined by CD
3. These dimen si ons shall be me asure d at poi nts 0.050 inch (1.27 mm) to 0.055 inch (1.40 mm) below seating plane.
4. Both terminals
5. At both ends
6. Two holes
7. Ter minal 1 is the emitter, terminal 2 is base. The collector shall be electrically connected to the case.
8. LD applies between L1 and LL. Diameter is uncontro lle d in L1.
9. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
SCHEMATIC
Dimensions
Ltr
Inches
Millimeters
Notes
Min
Max
Min
Max
CD
-
0.875
-
22.23
3
CH
0.250
0.360
6.35
9.14
HR
0.495
0.525
12.57
13.34
HR1
0.131
0.188
3.33
4.78
HT
0.060
0.135
1.52
3.43
LD
0.038
0.043
0.97
1.09
4, 8
LL
0.312
0.500
7.92
12.70
4
LL1
-
0.050
-
1.27
4, 8
MHD
0.151
0.165
3.84
4.19
6
MHS
1.177
1.197
29.90
30.40
PS
0.420
0.440
10.67
11.18
3
PS1
0.205
0.225
5.21
5.72
S1
0.655
0.675
16.64
17.15
T1
Emitter
T2
Base
Case
Collector