Ignition IGBT Surface Mount > 400V > NGD8201AN NGD8201AN - 20 A, 400 V, N-Channel Ignition IGBT, DPAK Pb Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over- Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features * Ideal for Coil-on-Plug and Driver-on-Coil Applications * DPAK Package Offers Smaller Footprint for Increased Board Space * Gate-Emitter ESD Protection 20 Amps, 400 Volts VCE(on) 1.3 V @ IC = 10 A, VGE 4.5 V * Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load * Integrated ESD Diode Protection * New Design Increases Unclamped Inductive Switching Maximum Ratings (TJ = 25C unless otherwise noted) (UIS) Energy Per Area Rating Symbol Value Unit Collector-Emitter Voltage VCES 440 V Gate-Gate Voltage VCES 440 V Gate-Emitter Voltage VGE 15 V 20 ADC 50 AAC * Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices * Low Saturation Voltage Collector Current-Continuous @ TC = 25C - Pulsed IC Continous Gate Current IG 1.0 mA Transient Gate Current (t 2 ms, f 100 Hz) IG 20 mA ESD (Charged-Device Model) ESD 2.0 kV ESD (Human Body Model) R = 1500 , C = 100 pF ESD 2.0 kV ESD (Machine Model) R = 0 , C = 200 pF ESD 500 V 125 W 0.83 W/C -55 to +175 C Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Temperature Range PD TJ, Tstg * High Pulsed Current Capability * Emitter Ballasting for Short-Circuit Capability * These are Pb-Free Devices Functional Diagram Additional Information Datasheet Resources Samples Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. (c) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 400V > NGD8201AN Unclamped Collector-To-Emitter Avalanche Characteristics Symbol Value Unit Single Pulse Collector-to-Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, RG = 1000 , L = 1.8 mH, Starting TJ = 25C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, RG = 1000 , L = 3.0 mH, Starting TJ = 150C 250 200 EAS mJ 180 VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, RG = 1000 , L = 1.8 mH, Starting TJ = 175C Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25C EAS (R) 2000 mJ Thermal Characteristics Symbol Value RJC 1.3 Thermal Resistance, Junction to Ambient DPAK (Note 1) RJA 95 Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 5 seconds TL 275 Thermal Resistance, Junction to Case Unit C/W C 1. When surface mounted to an FR4 board using the minimum recommended pad size. (c) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 400V > NGD8201AN Electrical Characteristics - OFF Characteristic Collector-Emitter Clamp Voltage Symbol Test Conditions Temperature Min Typ Max IC = 2.0 mA TJ = -40C to 175C 370 395 420 BVCES V IC = 10 mA VCE = 15 V VGE = 0 V Zero Gate Voltage Collector Current ICES VCE = 200 V VGE = 0 V Reverse Collector-Emitter Clamp Voltage Reverse Collector-Emitter Leakage Current BVCES(R) ICES(R) Unit IC = -75 mA VCE = -24 V TJ = -40C to 175C 390 415 440 TJ = 25C - 0.1 1.0 TJ = 25C 0.5 1.5 10 A TJ = 175C 1.0 25 100* TJ = -40C 0.4 0.8 5.0 TJ = 25C 30 35 39 TJ = 175C 35 39 45* TJ = -40C 30 33 37 TJ = 25C 0.05 0.2 1.0 TJ = 175C 1.0 8.5 25 TJ = -40C 0.005 0.025 0.2 V mA Gate-Emitter Clamp Voltage BVGES IG = 5.0 mA TJ = -40C to 175C 12 12.5 14 V Gate-Emitter Leakage Current IGES VGE = 5.0 V TJ = -40C to 175C 200 300 350* A Gate Resistor RG _ TJ = -40C to 175C - 70 - Gate-Emitter Resistor RGE - TJ = -40C to 175C 14.25 16 25 k Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Maximum Value of Characteristic across Temperature Range. (c) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 400V > NGD8201AN Electrical Characteristics - ON (Note 3) Characteristic Gate Threshold Voltage Threshold Temperature Coefficient (Negative) Symbol VGE (th) Test Conditions IC = 1.0 mA, VGE = VCE - - IC = 6.5 A, VGE = 3.7 V IC =9.0 A, VGE = 3.9 V IC = 7.5 A, VGE = 4.5 V Collector-to-Emitter On-Voltage VCE (on) IC = 10 A, VGE = 4.5 V IC = 15 A, VGE = 4.5 V IC = 20 A, VGE = 4.5 V Forward Transconductance gfs IC = 6.0 A, VCE = 5.0 V Temperature Min Typ Max TJ = 25C 1.5 1.8 2.1 TJ = 175C 0.7 1.0 1.3 TJ = -40C 1.7 2.0 2.3* - 4.0 4.6 5.2 TJ = 25C 0.85 1.03 1.35 TJ = 175C 0.7 0.9 1.15 TJ = -40C 0.09 1.11 1.4 TJ = 25C 0.9 1.11 1.45 TJ = 175C 0.8 1.01 1.25 TJ = -40C 1.0 1.18 1.5 TJ = 25C 0.85 1.15 1.4 TJ = 175C 0.7 0.95 1.2 TJ = -40C 1.0 1.3 1.6* TJ = 25C 1.0 1.3 1.6 TJ = 175C 0.8 1.05 1.4 TJ = -40C 1.1 1.4 1.7* TJ = 25C 1.15 1.45 1.7 TJ = 175C 1.0 1.3 1.55 TJ = -40C 1.25 1.55 1.8* TJ = 25C 1.1 1.4 1.9 TJ = 175C 1.2 1.5 1.8 TJ = -40C 1.3 1.42 2.0 TJ = 25C 10 18 25 Unit V mV/C V *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width 300 S, Duty Cycle 2%. (c) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Mhos Ignition IGBT Surface Mount > 400V > NGD8201AN Dynamic Characteristics Characteristic Symbol Input Capacitance CISS Output Capacitance COSS Transfer Capacitance CRSS Test Conditions f = 10 kHz VCC = 25 V Temperature TJ = -40C to 175C Min Typ Max 1100 1300 1500 70 80 90 18 20 22 Unit pF Switching Characteristics Characteristic Turn-Off Delay Time (Resistive) Symbol td (off) Test Conditions VCC = 300 V IC = 9.0 A Temperature Min Typ Max TJ = 25C 6.0 8.0 10 TJ = 175C 6.0 8.0 10 TJ = 25C 4.0 6.0 8.0 TJ = 175C 8.0 10.5 14 TJ = 25C 3.0 5.0 7.0 TJ = 175C 5.0 7.0 9.0 TJ = 25C 1.5 3.0 4.5 TJ = 175C 5.0 7.0 10 TJ = 25C 1.0 1.5 2.0 TJ = 175C 1.0 1.5 2.0 TJ = 25C 4.0 6.0 8.0 TJ = 175C 3.0 5.0 7.0 Unit RG = 1.0 k Fall Time (Resistive) Turn-Off Delay Time (Inductive) tf td (off) RL = 33 VGE = 5.0 V VCC = 300 V IC = 9.0 A Sec RG = 1.0 k L = 300 H Fall Time (Inductive) Turn-On Delay Time tf td (on) VGE = 5.0 V VCC = 14 V IC = 9.0 A RG = 1.0 k Rise Time tr RL = 1.5 VGE = 5.0 V (c) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 400V > NGD8201AN Typical Electrical Characteristics Figure 1. Self Clamped Inductive Switching Figure 2. Open Secondary Avalanche Current vs. Temperature Figure 3. Collector-to-Emitter Voltage vs. Junction Temperature Figure 4. Collector Current vs. Collector-to-Emitter Voltage Figure 5. Collector Current vs. Collector-to-Emitter Voltage Figure 6. Collector Current vs. Collector-to-Emitter Voltage (c) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 400V > NGD8201AN Figure 7. Transfer Characteristics Figure 8. Collector-to-Emitter Leakage Current vs. Temp Figure 9. Gate Threshold Voltage vs. Temperature Figure 10. Capacitance vs. Collector-to-Emitter Voltage Figure 11. Resistive Switching Fall Time vs. Temperature Figure 12. Inductive Switching Fall Time vs. Temperature (c) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 400V > NGD8201AN Figure 13. Minimum Pad Transient Thermal Resistance (Non-normalized Junction-to-Ambient) Figure 14. Best Case Transient Thermal Resistance (Non-normalized Junction-to-Case Mounted on Cold Plate) (c) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 400V > NGD8201AN Soldering Footrpint Dimensions A E b3 c2 4 L3 D 12 L4 B 6.20 0.244 C A 3 NOTE 7 b2 e b TOP VIEW c SIDE VIEW 0.005 Z H DETAIL A Z Inches Max C SEATING PLANE Part Marking System Min Max 0.086 0.094 2.18 2.38 0.000 0.005 0.00 0.13 b 0.025 0.035 0.63 0.89 b2 0.028 0.045 0.72 1.14 b3 0.180 0.215 4.57 5.46 c 0.018 0.024 0.46 0.61 c2 0.018 0.024 0.46 0.61 D 0.235 0.245 5.97 6.22 E 0.250 0.265 6.35 6.73 2.29 BSC H 0.370 0.410 9.40 10.41 L 0.055 0.070 1.40 1.78 L2 0.020 BSC 1 Gate Millimeters A 0.114 REF mm inches A1 A1 0.090 BSC 6.17 0.243 SCALE 3:1 ROTATED 90 CW L1 1.60 0.063 ALTERNATE CONSTRUCTION GAUGE PLANE L1 DETAIL A e 5.80 0.228 H L Min 2.58 0.102 BOTTOM VIEW BOTTOM VIEW (0.13 )M C L2 Dim 3.00 0.118 2.90 REF 2 Collector AYWW L NGD F 4 Collector 8201AN 8201AG 3 Emitter NGD8201A = Device Code A= Y= WW G Assembly Location Year = Work Week e ORDERING INFORMATION Device Package Shipping NGD8201ANT4G DPAK (Pb-Free) 2,500 / Tape & Reel 0.51 BSC L3 0.035 0.050 0.89 1.27 L4 --- 0.040 --- 1.01 Z 0.155 --- 3.93 --- NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics. (c) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18