© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 400V > NGD8201AN
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• DPAK Package Offers Smaller Footprint for Increased
Board Space
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp
Limits Stress Applied to Load
• Integrated ESD Diode Protection
• New Design Increases Unclamped Inductive Switching
(UIS) Energy Per Area
• Low Threshold Voltage for Interfacing Power Loads to
Logic or Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Emitter Ballasting for Short−Circuit Capability
• These are Pb−Free Devices
Features
This Logic Level Insulated Gate Bipolar Transistor (IGBT)
features monolithic circuitry integrating ESD and Over−
Voltage clamped protection for use in inductive coil
drivers applications. Primary uses include Ignition, Direct
Fuel Injection, or wherever high voltage and high current
switching is required.
Description
Rating Symbol Value Unit
Collector−Emitter Voltage VCES 440 V
Gate−Gate Voltage VCES 440 V
Gate−Emitter Voltage VGE ± 15 V
Collector Current−Continuous
@ TC = 25°C − Pulsed IC
20
50
ADC
AAC
Continous Gate Current IG1. 0 mA
Transient Gate Current
(t ≤ 2 ms, f ≤ 100 Hz) IG20 mA
ESD (Charged–Device Model) ESD 2.0 kV
ESD (Human Body Model)
R = 1500 Ω, C = 100 pF ESD 2.0 kV
ESD (Machine Model)
R = 0 Ω, C = 200 pF ESD 500 V
Total Power Dissipation @ TC = 25°C
Derate above 25°C PD
125
0.83
W
W/°C
Operating and Storage
Temperature Range TJ, Tstg
−55 to
+175 °C
Maximum Ratings (TJ = 25°C unless otherwise noted)
NGD8201AN - 20 A, 400 V, N-Channel Ignition IGBT, DPAK
Functional Diagram
Pb
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are
stress ratings only. Functional operation above the Recommended Operating Conditions
is not implied. Extended exposure to stresses above the Recommended Operating
Conditions may affect device reliability.
Additional Information
Samples
Resources
Datasheet
20 Amps, 400 Volts
VCE(on) ≤ 1.3 V @
IC = 10 A, VGE ≥ 4.5 V
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 400V > NGD8201AN
Unclamped Collector−To−Emitter Avalanche Characteristics
Thermal Characteristics
Symbol Value Unit
Thermal Resistance, Junction to Case RθJC 1. 3
°C/W
Thermal Resistance, Junction to Ambient DPAK (Note 1) RθJA 95
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 5 seconds TL275 °C
1. When surface mounted to an FR4 board using the minimum recommended pad size.
Symbol Value Unit
Single Pulse Collector−to−Emitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, RG = 1000 Ω , L = 1.8 mH, Starting TJ = 25°C
EAS
250
mJVCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, RG = 1000 Ω , L = 3.0 mH, Starting TJ = 150°C 200
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, RG = 1000 Ω , L = 1.8 mH, Starting TJ = 175°C 180
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C EAS (R) 2000 mJ
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 400V > NGD8201AN
Electrical Characteristics - OFF
Characteristic Symbol Test
Conditions Temperature Min Typ Max Unit
Collector−Emitter
Clamp Voltage BVCES
IC = 2.0 mA TJ = −40°C to 175°C 370 395 420
V
IC = 10 mA TJ = −40°C to 175°C 390 415 440
Zero Gate Voltage
Collector Current ICES
VCE = 15 V
VGE = 0 V TJ = 25°C − 0.1 1. 0
µA
VCE = 200 V
VGE = 0 V
TJ = 25°C0.5 1. 5 10
TJ = 175°C1. 0 25 100*
TJ = −40°C0.4 0.8 5.0
Reverse Collector−Emitter
Clamp Voltage BVCES(R) IC = -75 mA
TJ = 25°C30 35 39
VTJ = 175°C35 39 45*
TJ = −40°C30 33 37
Reverse Collector−Emitter
Leakage Current ICES(R) VCE = −24 V
TJ = 25°C0.05 0.2 1. 0
mATJ = 175°C1. 0 8.5 25
TJ = −40°C0.005 0.025 0.2
Gate−Emitter Clamp Voltage BVGES IG = ± 5.0 mA TJ = −40°C to 175°C 12 12.5 14 V
Gate−Emitter Leakage Current IGES VGE = ± 5.0 V TJ = −40°C to 175°C 200 300 350* µA
Gate Resistor RG_TJ = −40°C to 175°C –70 – Ω
Gate−Emitter Resistor RGE −TJ = −40°C to 175°C 14.25 16 25 kΩ
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical
Characteristics if operated under different conditions.
*Maximum Value of Characteristic across Temperature Range.
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 400V > NGD8201AN
Electrical Characteristics - ON (Note 3)
Characteristic Symbol Test Conditions Temperature Min Typ Max Unit
Gate Threshold Voltage VGE (th)
IC = 1.0 mA,
VGE = VCE
TJ = 25°C1. 5 1. 8 2.1
V
TJ = 175°C0.7 1. 0 1. 3
TJ = −40°C1. 7 2.0 2.3*
Threshold Temperature
Coefficient (Negative) − − − 4.0 4.6 5.2 mV/°C
Collector−to−Emitter
On−Voltage VCE (on)
IC = 6.5 A,
VGE = 3.7 V
TJ = 25°C0.85 1.03 1.35
V
TJ = 175°C0.7 0.9 1. 15
TJ = −40°C0.09 1. 11 1. 4
IC =9.0 A,
VGE = 3.9 V
TJ = 25°C0.9 1. 11 1.45
TJ = 175°C0.8 1. 01 1.25
TJ = −40°C1. 0 1. 18 1. 5
IC = 7.5 A,
VGE = 4.5 V
TJ = 25°C0.85 1. 15 1. 4
TJ = 175°C0.7 0.95 1. 2
TJ = −40°C1. 0 1. 3 1.6*
IC = 10 A,
VGE = 4.5 V
TJ = 25°C1. 0 1. 3 1. 6
TJ = 175°C0.8 1.05 1. 4
TJ = −40°C1. 1 1. 4 1.7*
IC = 15 A,
VGE = 4.5 V
TJ = 25°C1. 15 1.45 1. 7
TJ = 175°C1. 0 1. 3 1.55
TJ = −40°C1.25 1.55 1.8*
IC = 20 A,
VGE = 4.5 V
TJ = 25°C1. 1 1. 4 1. 9
TJ = 175°C1. 2 1. 5 1. 8
TJ = −40°C1. 3 1.42 2.0
Forward Transconductance gfs
IC = 6.0 A,
VCE = 5.0 V
TJ = 25°C10 18 25 Mhos
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width ≤ 300 µS, Duty Cycle ≤ 2%.
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 400V > NGD8201AN
Switching Characteristics
Characteristic Symbol Test
Conditions Temperature Min Typ Max Unit
Turn−Off Delay Time (Resistive) td (off)
VCC = 300 V
IC = 9.0 A
RG = 1.0 kΩ
RL = 33 Ω
VGE = 5.0 V
TJ = 25°C6.0 8.0 10
µSec
TJ = 175°C6.0 8.0 10
Fall Time (Resistive) tf
TJ = 25°C4.0 6.0 8.0
TJ = 175°C8.0 10.5 14
Turn−Off Delay Time (Inductive) td (off)
VCC = 300 V
IC = 9.0 A
RG = 1.0 kΩ
L = 300 µH
VGE = 5.0 V
TJ = 25°C3.0 5.0 7. 0
TJ = 175°C5.0 7. 0 9.0
Fall Time (Inductive) tf
TJ = 25°C1. 5 3.0 4.5
TJ = 175°C5.0 7. 0 10
Turn−On Delay Time td (on)
VCC = 14 V
IC = 9.0 A
RG = 1.0 kΩ
RL = 1.5 Ω
VGE = 5.0 V
TJ = 25°C1. 0 1. 5 2.0
TJ = 175°C1. 0 1. 5 2.0
Rise Time tr
TJ = 25°C4.0 6.0 8.0
TJ = 175°C3.0 5.0 7. 0
Dynamic Characteristics
Characteristic Symbol Test Conditions Temperature Min Typ Max Unit
Input Capacitance CISS
f = 10 kHz
VCC = 25 V
TJ = -40ºC
to
175°C
110 0 1300 1500
pF
Output Capacitance COSS 70 80 90
Transfer Capacitance CRSS 18 20 22
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 400V > NGD8201AN
Figure 1. Self Clamped Inductive Switching
Typical Electrical Characteristics
Figure 2. Open Secondary Avalanche Current vs. Temperature
Figure 3. Collector−to−Emitter Voltage vs. Junction Temperature
Figure 5. Collector Current vs. Collector−to−Emitter Voltage Figure 6. Collector Current vs. Collector−to−Emitter Voltage
Figure 4. Collector Current vs. Collector−to−Emitter Voltage
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 400V > NGD8201AN
Figure 7. Transfer Characteristics Figure 8. Collector−to−Emitter Leakage Current vs. Temp
Figure 9. Gate Threshold Voltage vs. Temperature
Figure 11. Resistive Switching Fall Time vs. Temperature Figure 12. Inductive Switching Fall Time vs. Temperature
Figure 10. Capacitance vs. Collector−to−Emitter Voltage
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 400V > NGD8201AN
Figure 13. Minimum Pad Transient Thermal Resistance (Non−normalized Junction−to−Ambient)
Figure 14. Best Case Transient Thermal Resistance (Non−normalized Junction−to−Case Mounted on Cold Plate)
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/15/18
Ignition IGBT
Surface Mount > 400V > NGD8201AN
Dimensions
Part Marking System
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS,
OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT
EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST
EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H.
Dim
Inches Millimeters
Min Max Min Max
A0.086 0.094 2.18 2.38
A1 0.000 0.005 0.00 0.13
b0.025 0.035 0.63 0.89
b2 0.028 0.045 0.72 1. 14
b3 0.180 0.215 4.57 5.46
c0.018 0.024 0.46 0.61
c2 0.018 0.024 0.46 0.61
D0.235 0.245 5.97 6.22
E0.250 0.265 6.35 6.73
e0.090 BSC 2.29 BSC
H0.370 0.410 9.40 10.41
L0.055 0.070 1.40 1.78
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
L3 0.035 0.050 0.89 1.27
L4 −−− 0.040 −−− 1. 01
Z0.155 −−− 3.93 −−−
Soldering Footrpint
ORDERING INFORMATION
Device Package Shipping†
NGD8201ANT4G DPAK
(Pb−Free)
2,500 /
Tape & Reel
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244
3.00
0.118
6.17
0.243
mm
inches
SCALE 3:1
b
D
E
b3
L3
L4
b2
M
0.005 (0.13) C
c2
A
c
C
Z
12 3
4
A1
H
DETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2 GAUGE
PLANE
DETAIL A
ROTATED 90 CW
e
BOTTOM VIEW
Z
BOTTOM VIEW
SIDE VIEW
TOP VIEW
ALTERNATE
CONSTRUCTION
NOTE 7
1
Gate
4
Collector
2
Collector
3
Emitter
AYWW
NGD
= Device Code
A=
Y= Year
WW = Work Week
Ge
L
F
NGD8201A
Assembly Location
8201AN
Disclaimer Notice - Information furnished is believed to be accurate and
reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applications. Littelfuse products are
not designed for, and may not be used in, all applications. Read complete
Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics.
8201AG
