PNP Silicon Switching Transistor PZT 3906 High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type: PZT 3904 (NPN) Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) PZT 3906 ZT 3906 Q62702-Z2030 B SOT-223 C E C Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0 40 Emitter-base voltage VEB0 5 Collector current IC 200 mA Total power dissipation, TS = 80 C Ptot 1.5 W Junction temperature Tj 150 C Storage temperature range Tstg - 65 ... + 150 Junction - ambient2) Rth JA 117 Junction - soldering point Rth JS 47 Thermal Resistance 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 PZT 3906 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CE0 40 - - Collector-base breakdown voltage IC = 10 A, IB = 0 V(BR)CB0 40 - - Emitter-base breakdown voltage IE = 10 A, IC = 0 V(BR)EB0 5 - - Collector-base cutoff current VCB = 30 V, IE = 0 ICB0 - - 50 Collector-emitter cutoff current VCE = 30 V, + VBE = 0.5 V ICEV - - 50 Collector-base cutoff current VCE = 30 V, + VBE = 0.5 V IBEV - - 50 DC current gain1) IC = 0.1 mA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, VCE = 1 V hFE 60 80 100 60 30 - - - - - - - 300 - - Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VCEsat Base-emitter saturation voltage1) IC = 10 mA, IC = 1 mA IC = 50 mA, IC = 5 mA VBEsat 1) Pulse test conditions: t 300 s, D = 2 % Semiconductor Group 2 V nA - V - - - - 0.25 0.4 - - - - 0.85 0.95 PZT 3906 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz fT 250 - - MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Cobo - - 4.5 pF Input capacitance VEB = 0.5 V, f = 1 MHz Cibo - - 10 Noise figure IC = 100 A, VCE = 5 V, RS = 1 k, f= 10 Hz to 15.7 kHz F - - 4 dB Input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz h11e 2 - 12 k Open-circuit reverse voltage transfer ratio IC = 1 mA, VCE = 10 V, f = 1 kHz h12e 0.1 - 10 10- 4 Short-circuit forward current transfer ratio IC = 1 mA, VCE = 10 V, f = 1 kHz h21e 100 - 400 - Open-circuit output admittance IC = 1 mA, VCE = 10 V, f = 1 kHz h22e 3 - 60 S td tr - - - - 35 35 ns ns tstg tf - - - - 225 75 ns ns VCC = 3 V, IC = 10 mA, IB1 = 1 mA VBE(off) = 0.5 V Delay time Rise time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Storage time Fall time (see diagrams) Semiconductor Group 3 PZT 3906 Switching Times Turn-on time when switched from + VBEoff = 0.5 V to - VBEon = 10.6 V, - ICon = 10 mA; - IBon = 1 mA Input waveform; tr < 1 ns; tp = 300 ns; = 0.02. Delay and rise time test circuit; total shunt capacitance of test jig and connectors CS < 4 pF; scope impedance = 10 M. Turn-off time ICon = 10 mA; IBon = - IBoff = 1 mA Input waveform; tf < 1 ns; 10 s < tp 500 s; = 0.02. Semiconductor Group Storage and fall time test circuit; total shunt capacitance of test jig and connectors CS < 4 pF; scope impedance = 10 M. 4 PZT 3906 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Saturation voltage IC = f (VBEsat, VCEsat) hFE = 10 DC current gain hFE = f (IC) VCE = 1 V, normalized Permissible pulse load Ptot max / Ptot DC = f (tp) Semiconductor Group 5