PZT3906 - Siemens Semiconductors - Pdf.Support

Semiconductor Group 1

PNP Silicon Switching Transistor PZT 3906

5.91

Maximum Ratings

Type Ordering Code

(tape and reel)

Marking Package1)

Pin Configuration

PZT 3906 Q62702-Z2030ZT 3906 SOT-223

1234

B C E C

Parameter Symbol Values Unit

Collector-emitter voltage VCE0 40 V

Collector-base voltage VCB0 40

Emitter-base voltage VEB0 5

Collector current IC200 mA

Total power dissipation, TS=80˚C P

tot 1.5 W

Junction temperature Tj150 ˚C

Storage temperature range Tstg – 65 … + 150

Thermal Resistance

Junction - ambient2) Rth JA ≤ 117 K/W

Junction - soldering point Rth JS ≤ 47

1) For detailed information see chapter Package Outlines.

2) Package mounted on epoxy pcb 40 mm ×40 mm ×1.5 mm/6 cm2 Cu.

●High DC current gain 0.1 mA to 100 mA

●Low collector-emitter saturation voltage

●Complementary type: PZT 3904 (NPN)

Semiconductor Group 2

PZT 3906

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

UnitValues

Parameter Symbol

min. typ. max.

DC characteristics

VCollector-emitter breakdown voltage

I

C = 1 mA, IB = 0 V(BR)CE0 40 – –

Collector-base breakdown voltage

I

C = 10 µA, IB = 0 V(BR)CB0 40 – –

Emitter-base breakdown voltage

I

E = 10 µA, IC = 0 V(BR)EB0 5––

nACollector-base cutoff current

VCB = 30 V, IE = 0 ICB0 ––50

Collector-emitter cutoff current

VCE = 30 V, + VBE = 0.5 V ICEV ––50

–

DC current gain1)

I

C = 0.1 mA, VCE = 1 V

I

C = 1 mA, VCE = 1 V

I

C = 10 mA, VCE = 1 V

I

C = 50 mA, VCE = 1 V

I

C = 100 mA, VCE = 1 V

hFE 60

80

100

60

30

–

–

–

–

–

–

–

300

–

–VCollector-emitter saturation voltage1)

I

C = 10 mA, IB = 1 mA

I

C = 50 mA, IB = 5 mA

VCEsat –

––

–0.25

0.4

Base-emitter saturation voltage1)

I

C = 10 mA, IC = 1 mA

I

C = 50 mA, IC = 5 mA

VBEsat –

––

–0.85

0.95

Collector-base cutoff current

VCE = 30 V, + VBE = 0.5 V IBEV ––50

1) Pulse test conditions: t≤ 300 µs, D = 2 %

Semiconductor Group 3

PZT 3906

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

MHzTransition frequency

I

C = 10 mA, VCE = 20 V, f = 100 MHz fT250 – –

pFCollector-base capacitance

VCB = 5 V, f = 1 MHz Cobo – – 4.5

AC characteristics

UnitValuesParameter Symbol

min. typ. max.

Input capacitance

VEB = 0.5 V, f = 1 MHz Cibo ––10

dBNoise figure

I

C = 100 µA, VCE = 5 V, RS = 1 kΩ,

f = 10 Hz to 15.7 kHz

F––4

kΩInput impedance

I

C = 1 mA, VCE = 10 V, f = 1 kHz h11e 2–12

10–4

Open-circuit reverse voltage transfer ratio

I

C = 1 mA, VCE = 10 V, f = 1 kHz h12e 0.1 – 10

–Short-circuit forward current transfer ratio

I

C = 1 mA, VCE = 10 V, f = 1 kHz h21e 100 – 400

µSOpen-circuit output admittance

I

C = 1 mA, VCE = 10 V, f = 1 kHz h22e 3–60

ns

ns

ns

ns

VCC = 3 V, IC = 10 mA, IB1 = 1 mA

VBE(off) = 0.5 V

Delay time

Rise time

VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA

Storage time

Fall time

(see diagrams)

td

tr

tstg

tf

–

–

–

–

–

–

–

–

35

35

225

75

Semiconductor Group 4

PZT 3906

Switching Times

Turn-on time when switched from + VBEoff = 0.5 V to –VBEon = 10.6 V, – ICon = 10 mA;

–I

Bon = 1 mA

Input waveform; tr<1 ns; tp= 300 ns; Delay and rise time test circuit; total shunt

δ = 0.02. capacitance of test jig and connectors

CS<4 pF; scope impedance = 10 MΩ.

Turn-off time ICon = 10 mA; IBon = – IBoff = 1 mA

Storage and fall time test circuit; total shunt

capacitance of test jig and connectors

CS<4 pF; scope impedance = 10 MΩ.

Input waveform; tf<1 ns; 10 µs<tp≤500 µs;

δ = 0.02.

Semiconductor Group 5

PZT 3906

Total power dissipation Ptot =f(TA*; TS)

* Package mounted on epoxy

DC current gain hFE =f(IC)

VCE = 1 V, normalized

Saturation voltage IC=f(VBEsat,VCEsat)

hFE =10

Permissible pulse load Ptot max /Ptot DC =f(tp)