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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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RHRP8120
8 A, 1200 V, Hyperfast Diode
The RHRP8120 is a hyperfast diode with soft recovery
characteristics. It has the half recovery time of ultrafast
diodes and is silicon nitride passivated ionimplanted
epitaxial planar construction. These devices are
intended to be used as freewheeling/ clamping diodes
and diodes in a variety of switching power supplies and
other power switching applications. Their low stored
charge and hyperfast soft recovery minimize ringing and
electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Symbol
Features
• Hyperfast Recovery trr = 70 ns (@ IF= 8 A)
• Max Forward Voltage, VF = 3.2 V (@ TC = 25°C)
• 1200 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC TO-220AC
Ordering Information
PART NUMBER PACKAGE BRAND
RHRP8120 TO-220AC-2L RHRP8120
NOTE: When ordering, use the entire part number.
K
A
CATHODE
ANODE
CATHODE
(FLANGE)
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RHRP8120 UNIT
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 1200 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 1200 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR1200 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IF(AV)
(TC = 140oC)
8A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM
(Square Wave, 20 kHz)
16 A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
(Halfwave, 1 Phase, 60 Hz)
100 A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD75 W
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL 20 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ-65 to 175 oC
Data Sheet November 2013
www.fairchildsemi.com
1
©2001 Fairchild Semiconductor Corporation
RHR8120 Rev. C1
Electrical Specifications TC = 25oC, Unless Otherwise Specified
SYMBOL TEST CONDITION MIN TYP MAX UNIT
VF- - 3.2 V
- - 2.6 V
IR- - 100 µA
- - 500 µA
trr --55ns
--70ns
ta- 30 - ns
tb- 20 - ns
Qrr - 165 - nC
CJ
IF = 8 A
IF = 8 A, TC = 150oC
VR = 1200 V
VR = 1200 V, TC = 150oC
IF = 1 A, dIF/dt = 200 A/µs
IF = 8 A, dIF/dt = 200 A/µs
IF = 8 A, dIF/dt = 200 A/µs
IF = 8 A, dIF/dt = 200 A/µs
IF = 8 A, dIF/dt = 200 A/µs
VR = 10 V, IF = 0 A- 25 - pF
RθJC --2
oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300 µs, D = 2%).
IR = Instantaneous reverse current.
Trr = Reverse recovery time (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
Qrr = Reverse Recovery Charge.
CJ = Junction Capacitance.
RθJC = Thermal resistance junction to case.
pw = Pulse Width.
D = Duty Cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
VF, FORWARD VOLTAGE (V)
IF,
FORWARD CURRENT (A)
1
40
0.5
10
0123 54
25oC
100oC
175oC
VR, REVERSE VOLTAGE (V)
0400 800 1200
600 1000
500
0.01
0.1
1
10
IR, REVERSE CURRENT (µA)
200
0.001
25oC
100oC
175oC
100
RHRP8120
www.fairchildsemi.com
2
©2001 Fairchild Semiconductor Corporation
RHRP8120 Rev. C1
FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT
FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Typical Performance Curves (Continued)
IF, FORWARD CURRENT (A)
0.5
0
40
10
81
20
30
t, RECOVERY TIMES (ns)
4
tb
50
trr
ta
60
TC = 25oC, dIF/dt = 200A/µs
20
40
60
t, RECOVERY TIMES (ns)
IF, FORWARD CURRENT (A)
0.5
0814
80
ta
trr
100
tb
TC = 100oC, dIF/dt = 200A/µs
100
80
60
t, RECOVERY TIMES (ns)
IF, FORWARD CURRENT (A)
0.5
0
814
ta
40
120
trr
tb
20
TC = 175oC, dIF/dt = 200A/µs
10
2
0
100 115 145 175160
4
6
8
130
DC
SQ. WAVE
IF(AV), AVERAGE FORWARD CURRENT (A)
TC, CASE TEMPERATURE (oC)
VR, REVERSE VOLTAGE (V)
20
100
0
40
0 50 100 150 200
80
60
CJ, JUNCTION CAPACITANCE (pF)
RHRP8120
www.fairchildsemi.com
3
©2001 Fairchild Semiconductor Corporation
RHRP8120 Rev. C1
Test Circuits and Waveforms
FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
VGE
t1
t2
VGE AMPLITUDE AND
t1 AND t2 CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IF
trr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE
+
LR
VDD
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
IMAX = 1A
L = 40mH
IV
t0t1t2
IL
VAVL
t
IL
RHRP8120
www.fairchildsemi.com
4
©2001 Fairchild Semiconductor Corporation
RHRP8120 Rev. C1
5°
3°
5°
3°
4.80
4.30
10.67
9.65
4.09
3.50
3.43
2.54
9.40
8.38
2.54
5.08
16.51
14.22
14.73
13.60
1.02
0.38
6.35 MAX
1.65
1.25
1.91
0.36
M
B A
M
0.36
M
C
A B
A
C
1.40
0.51
7°
3°
6.86
5.84
2.92
2.03
0.61
0.33
5°
3°
5°
3°
B
13.40
12.19
8.89
6.86
0.60 MAX
16.15
15.75
NOTES:
A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K,
VARIATION AC,DATED APRIL 2002.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-2009.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DRAWING FILE NAME: TO220A02REV5
1 2
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1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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