V
RRM
= 20 V - 40 V
I
F
= 25 A
Features
• High Surge Capability DO-4 Package
• Types up to 40V V
RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol Unit
Repetitive peak reverse voltage V
RRM
V
RMS reverse voltage V
RMS
V
DC blocking voltage
V
DC
V
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
20 35
25
35
25
20
14
Conditions 1N5829 (R) 1N5830 (R) 1N5831 (R)
25
17
1N5829 thru 1N5831R
2. Reverse polarity (R): Stud is anode.
Silicon Power
Schottk
y
Diode
DC
blocking
voltage
V
DC
V
Continuous forward current I
F
A
Operating temperature T
j
°C
Storage temperature T
stg
°C
Parameter Symbol Unit
Diode forward voltage
Thermal characteristics
Thermal resistance, junction -
case R
thJC
°C/W
1.8
25 25 25
800 800 800
35
0.58 0.58
-55 to 150 -55 to 150
250
25
20
-55 to 150
-55 to 150 -55 to 150 -55 to 150
2
1N5831 (R)
0.58
22
1N5829 (R) 1N5830 (R)
1.8 1.8
V
R
= 20 V, T
j
= 125 °C 250 250
A
mA
V
T
C
= 25 °C, t
p
= 8.3 ms
T
C
≤ 100 °C
Conditions
V
R
= 20 V, T
j
= 25 °C
I
F
= 25 A, T
j
= 25 °C
Reverse current I
R
V
F
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
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1
1N5829 thru 1N5831R
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Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
1N5829 thru 1N5831R
DO- 4 (DO-203AA)
J
G
F
A
E
D
P
N
B
C
M
Inches Millimeters
Min Max Min Max
A 10-32 UNF
B 0.424 0.437 10.77 11.10
C ----- 0.505 ----- 12.82
D ------ 0.800 ----- 20.30
E 0.453 0.492 11.50 12.50
F 0.114 0.140 2.90 3.50
G ----- 0.405 ----- 10.29
J ----- 0.216 ----- 5.50
M ----- φ0.302 ----- φ7.68
N 0.031 0.045 0.80 1.15
P 0.070 0.79 1.80 2.00
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